ETC BGY115A

DISCRETE SEMICONDUCTORS
DATA SHEET
BGY115A; BGY115B;
BGY115C/P; BGY115D
UHF amplifier modules
Product specification
Supersedes data of May 1994
File under Discrete Semiconductors, SC09
1996 May 13
Philips Semiconductors
Product specification
BGY115A; BGY115B;
BGY115C/P; BGY115D
UHF amplifier modules
FEATURES
PINNING - SOT321A
• 6 V nominal supply voltage1996 May 13
PIN
• 1.2 W output power (BGY115A, BGY115B and
BGY115D)
• 1.4 W output power (BGY115C/P)
• Easy control of output power by DC voltage
DESCRIPTION
1
RF input
2
VC
3
VS
4
• SMD outline.
RF output
Flange
ground
APPLICATIONS
• Hand-held transmitting equipment operating in the
824 to 849 MHz, 872 to 905 MHz, 890 to 915 MHz and
902 to 928 MHz frequency ranges.
DESCRIPTION
The BGY115A, BGY115B, BGY115C/P and BGY115D are
three-stage UHF amplifier modules. Each module consists
of three NPN silicon planar transistor chips mounted
together with matching and bias circuit components on a
metallized ceramic substrate.
1
2
3
4
Top view
MSA487
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C.
TYPE NUMBER
MODE OF
OPERATION
f
(MHz)
VS
(V)
PL
(W)
Gp
(dB)
η
(%)
ZS; ZL
(Ω)
BGY115A
CW
824 to 849
6
1.2
≥27.8
typ. 50
50
BGY115B
CW
872 to 905
6
1.2
≥27.8
typ. 50
50
BGY115C/P
CW
890 to 915
6
1.4
≥28.5
typ. 50
50
BGY115D
CW
902 to 928
6
1.2
≥27.8
typ. 50
50
MIN.
MAX.
UNIT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VS
PARAMETER
DC supply voltage
BGY115A, BGY115B, BGY115D
−
8.5
V
BGY115C/P
−
9
V
VC
DC control voltage
−
4
V
PD
input drive power
−
5
mW
PL
load power
BGY115A, BGY115B, BGY115D
−
1.6
W
BGY115C/P
−
1.8
W
Tstg
storage temperature
−40
+100
°C
Tmb
operating mounting base temperature
−30
+100
°C
1996 May 13
2
Philips Semiconductors
Product specification
BGY115A; BGY115B;
BGY115C/P; BGY115D
UHF amplifier modules
CHARACTERISTICS
ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; VC ≤ 3.5 V; Tmb = 25 °C; unless otherwise specified.
SYMBOL
f
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
frequency
BGY115A
824
−
849
MHz
BGY115B
872
−
905
MHz
BGY115C/P
890
−
915
MHz
BGY115D
902
−
928
MHz
IQ
leakage current
VC = 0; PD < −60 dBm
−
−
100
µA
IC
control current
note 1
−
−
500
µA
PL
load power
BGY115A, BGY115B, BGY115D
1.2
−
−
W
BGY115C/P
1.4
−
−
W
BGY115A, BGY115B, BGY115D
27.8
−
−
dB
BGY115C/P
28.5
−
−
dB
Gp
power gain
note 1
η
efficiency
note 1
45
50
−
%
H2
second harmonic
note 1
−
−
−40
dBc
H3
third harmonic
note 1
−
−
−40
dBc
VSWRin
input VSWR
note 1
−
−
3:1
stability
PD = 0 to 6 dBm;
VS = 4.8 to 8.5 V; VC = 0 to 3.5 V;
VSWR ≤ 6 : 1 through all phases;
note 2
−
−
−60
dBc
isolation
VC = 0
−
−
−40
dBm
noise power
bandwidth = 30 kHz;
45 MHz above f0; note 1
−
−
−90
dBm
ruggedness
note 3
Pn
no degradation
Notes
1. Adjust VC for PL = 1.2 W (BGY115A, BGY115B and BGY115D); PL = 1.4 W (BGY115C/P).
2. Adjust VC for PL ≤ 1.2 W (BGY115A, BGY115B and BGY115D); PL ≤ 1.4 W, VS = 4.8 to 8 V (BGY115C/P).
3. Adjust VC for PL = 1.6 W; VS = 8.5 V; VSWR ≤ 10 : 1; (BGY115A, BGY115B and BGY115D). Adjust
VC for PL = 1.6 W; VS = 9 V, VSWR ≤ 6 : 1 (BGY115C/P).
1996 May 13
3
Philips Semiconductors
Product specification
BGY115A; BGY115B;
BGY115C/P; BGY115D
UHF amplifier modules
MSA908
2.0
MSA899
80
handbook, halfpage
handbook, halfpage
PL
(W)
η
(%)
1.6
60
824 MHz
1.2
824 MHz
849 MHz
849 MHz
40
0.8
20
0.4
0
0
0
1
2
3
4
V C (V)
5
0
Fig.3
MSA903
(W)
VS = 6 V
1.2
V S = 5.2 V
1.6
1.2
0.8
0.8
0.4
0.4
820
840
f (MHz)
0
40
860
0
40
80
120
T mb ( oC)
ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; VC = 3.5 V; Tmb = 25 °C.
ZS = ZL = 50 Ω; PD = 2 mW; VC = 3.5 V; Tmb = 25 °C.
1996 May 13
MSA906
2.0
PL
1.6
Fig.4
Efficiency as a function of load power;
BGY115A, typical values.
handbook, halfpage
handbook, halfpage
0
800
1.6
1.2
ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; Tmb = 25 °C.
Load power as a function of control voltage;
BGY115A, typical values.
2.0
PL
(W)
0.8
P L (W)
ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; Tmb = 25 °C.
Fig.2
0.4
Load power as a function of frequency;
BGY115A, typical values.
Fig.5
4
Load power as a function of mounting base
temperature; BGY115A, typical values.
Philips Semiconductors
Product specification
BGY115A; BGY115B;
BGY115C/P; BGY115D
UHF amplifier modules
MSA912
4
handbook, halfpage
VC
handbook, halfpage
PL
(W)
1.6
VSWR in
(V)
3
MSA910
2.0
3.0
824 MHz
2.5
VC
849 MHz
1.2
2
2.0
VSWR in
0.8
1
1.5
0
800
0.4
0
1.0
820
20
840 f (MHz) 860
Control voltage and VSWR input as functions
of frequency; BGY115A, typical values.
Fig.7
MSA901
20
H 2 , H3
handbook, halfpage
(dBc)
30
40
H2
50
H3
60
70
800
820
840
f (MHz)
860
ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.2 W; VS = 6 V; Tmb = 25 °C.
Fig.8
1996 May 13
0
P D (dBm)
10
ZS = ZL = 50 Ω; VS = 6 V; VC = 3.5 V; Tmb = 25 °C.
ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.2 W; VS = 6 V; Tmb = 25 °C.
Fig.6
10
Harmonics as functions of frequency;
BGY115A, typical values.
5
Load power as a function of drive power;
BGY115A, typical values.
Philips Semiconductors
Product specification
BGY115A; BGY115B;
BGY115C/P; BGY115D
UHF amplifier modules
MSA909
2.0
MSA900
80
handbook, halfpage
handbook, halfpage
PL
η
(%)
(W)
1.6
60
872 MHz
872 MHz
905 MHz
1.2
905 MHz
40
0.8
20
0.4
0
0
0
1
2
3
4
V C (V)
5
0
1.6
Fig.10 Efficiency as a function of load power;
BGY115B, typical values.
MSA904
2.0
MSA907
2.0
handbook, halfpage
handbook, halfpage
PL
(W)
PL
(W)
1.6
1.2
VS = 6 V
1.6
V S = 5.2 V
1.2
0.8
0.8
0.4
0.4
870
890
f (MHz)
0
40
910
ZS = ZL = 50 Ω; PD = 2 mW; VC = 3.5 V; Tmb = 25 °C.
0
40
80
120
T mb (o C)
ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; VC = 3.5 V; f = 890 MHz.
Fig.11 Load power as a function of frequency;
BGY115B, typical values.
1996 May 13
1.2
ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; Tmb = 25 °C.
Load power as a function of control voltage;
BGY115B, typical values.
0
850
0.8
P L (W)
ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; Tmb = 25 °C.
Fig.9
0.4
Fig.12 Load power as a function of mounting base
temperature; BGY115B, typical values.
6
Philips Semiconductors
Product specification
BGY115A; BGY115B;
BGY115C/P; BGY115D
UHF amplifier modules
MSA913
4
handbook, halfpage
VC
handbook, halfpage
PL
(W)
VSWR in
(V)
MSA911
2.0
3.0
1.6
872 MHz
2.5
3
VC
905 MHz
1.2
2.0
2
VSWR in
1
0
850
0.8
1.5
0.4
0
1.0
870
20
890 f (MHz) 910
ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.2 W; VS = 6 V; Tmb = 25 °C.
MSA902
(dBc)
30
40
50
H3
70
850
H2
870
890
f (MHz)
810
ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.2 W; VS = 6 V; Tmb = 25 °C.
Fig.15 Harmonics as functions of frequency;
BGY115B, typical values.
1996 May 13
P D (dBm)
10
Fig.14 Load power as a function of drive power;
BGY115B, typical values.
handbook, halfpage
60
0
ZS = ZL = 50 Ω; VS = 6 V; VC = 3.5 V; Tmb = 25 °C.
Fig.13 Control voltage and VSWR input as functions
of frequency; BGY115B, typical values.
20
H 2 , H3
10
7
Philips Semiconductors
Product specification
BGY115A; BGY115B;
BGY115C/P; BGY115D
UHF amplifier modules
MBD605
MBD604
60
2
η
(%)
PL
(W)
915 MHz
890 MHz
915 MHz
40
890 MHz
1
20
0
0
0
1
2
3
4
0
5
0.8
0.4
1.2
1.6
ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; Tmb = 25 °C.
ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; Tmb = 25 °C.
Fig.16 Load power as a function of control voltage;
BGY115C/P, typical values.
Fig.17 Efficiency as a function of load power;
BGY115C/P, typical values.
MBD606
2
2
PL (W)
VC (V)
MBD607
2
handbook, halfpage
PL
(W)
915 MHz
VS = 6 V
PL
(W)
890 MHz
5.2 V
1
1
0
860
880
900
920
0
−40
940
f (MHz)
ZS = ZL = 50 Ω; PD = 2 mW; VC = 3.5 V; Tmb = 25 °C.
40
80
120
Tmb (oC)
ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; VC = 3.5 V.
Fig.18 Load power as a function of frequency;
BGY115C/P, typical values.
1996 May 13
0
Fig.19 Load power as a function of mounting base
temperature; BGY115C/P, typical values.
8
Philips Semiconductors
Product specification
BGY115A; BGY115B;
BGY115C/P; BGY115D
UHF amplifier modules
MBD615
4
handbook, halfpage
VC
(V)
MBD616
60
3.0
handbook, halfpage
η
(%)
VSWRin
VC
2.5
3
40
2.0
2
VSWRin
20
1
0
860
1.5
880
900
920
f (MHz)
0
860
1.0
940
MBD617
H2, H3
(dBc)
−30
−40
H3
−50
H2
−60
900
920
f (MHz)
940
ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.4 W; VS = 6 V; Tmb = 25 °C.
Fig.22 Harmonics as functions of frequency;
BGY115C/P, typical values.
1996 May 13
940
Fig.21 Efficiency as a function of frequency;
BGY115C/P, typical values.
handbook, halfpage
880
920
ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.4 W; VS = 6 V; Tmb = 25 °C.
Fig.20 Control voltage and VSWR input as functions
of frequency; BGY115C/P, typical values.
−70
860
900
f (MHz)
ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.4 W; VS = 6 V; Tmb = 25 °C.
−20
880
9
Philips Semiconductors
Product specification
BGY115A; BGY115B;
BGY115C/P; BGY115D
UHF amplifier modules
MBD611
MBD612
2
80
η
(%)
P
L
(W)
902 MHz
60
902 MHz
928 MHz
928 MHz
40
1
20
0
0
0
1
2
3
4
5
0
0.8
0.4
1.2
1.6
ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; Tmb = 25 °C.
ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; Tmb = 25 °C.
Fig.23 Load power as a function of control voltage;
BGY115D, typical values.
Fig.24 Efficiency as a function of load power;
BGY115D, typical values.
MBD613
2
2
P L (W)
VC (V)
MBD614
2
handbook, halfpage
PL
VS = 6 V
902 MHz
PL
(W)
(W)
928 MHz
VS = 5.2 V
1
1
0
870
0
890
910
930
f (MHz)
950
0
40
80
120
Tmb ( oC)
ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; VC = 3.5 V.
ZS = ZL = 50 Ω; PD = 2 mW; VC = 3.5 V; Tmb = 25 °C.
Fig.25 Load power as a function of frequency;
BGY115D, typical values.
1996 May 13
40
Fig.26 Load power as a function of mounting base
temperature; BGY115D, typical values.
10
Philips Semiconductors
Product specification
BGY115A; BGY115B;
BGY115C/P; BGY115D
UHF amplifier modules
MBD610
4
handbook, halfpage
VC
(V)
MBD609
2.0
3.0
PL
(W)
1.6
VSWR in
902 MHz
2.5
3
VC
928 MHz
1.2
2.0
2
VSWR in
0.8
1
1.5
0.4
0
870
890
910
930
f (MHz)
1.0
950
0
20
Fig.27 Control voltage and VSWR input as functions
of frequency; BGY115D, typical values.
MBD608
30
40
50
H3
60
H2
890
910
930
f (MHz)
950
ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.2 W; VS = 6 V; Tmb = 25 °C.
Fig.29 Harmonics as functions of frequency;
BGY115D, typical values.
1996 May 13
P D (dBm)
10
Fig.28 Load power as a function of drive power;
BGY115D, typical values.
(dBc)
70
870
0
ZS = ZL = 50 Ω; VS = 6 V; VC = 3.5 V; Tmb = 25 °C.
ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.2 W; VS = 6 V; Tmb = 25 °C.
20
H 2 , H3
10
11
Philips Semiconductors
Product specification
BGY115A; BGY115B;
BGY115C/P; BGY115D
UHF amplifier modules
handbook, full pagewidth
pin
numbers
1
2
3
L2
L1
Z1
C1
C4
C3
C5
Z2
C2
RF input
4
C6
VC
MSA914
VS
RF output
Fig.30 Test circuit.
90
handbook, full pagewidth
1
2
3
4
50 Ω
input
50 Ω
output
VC
VS
Dimensions in mm.
Fig.31 Printed-circuit board layout.
1996 May 13
12
MSA915
60
Philips Semiconductors
Product specification
BGY115A; BGY115B;
BGY115C/P; BGY115D
UHF amplifier modules
List of components (see Fig.30)
COMPONENT
DESCRIPTION
VALUE
CATALOGUE NO.
C1, C4
multilayer ceramic chip capacitor
100 nF
2222 852 47104
C2, C5
35 V tantalum capacitor
2.2 µF
−
C3, C6
multilayer ceramic chip capacitor
33 pF
2222 851 13339
L1, L2
Ferroxcube coil
5 µH
3122 108 20153
Z1, Z2
stripline; note 1
50 Ω
−
Note
1. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 2.2);
thickness 1⁄32 inch.
1996 May 13
13
Philips Semiconductors
Product specification
BGY115A; BGY115B;
BGY115C/P; BGY115D
UHF amplifier modules
PACKAGE OUTLINE
25.0
24.6
handbook, full pagewidth
1.65
1.25
22.1
21.7
4.0
3.6
4.3
3.9
3.1 (4×)
2.9
13.4
13.0
5.1
4.9
2.4
2.2
1
2
3
0.55 (4×)
0.45
3.7
3.3
5.08
7.62
5.08
Dimensions in mm.
Fig.32 SOT321A.
1996 May 13
14
MSA352
1.2
min
4
0.25 M
(4×)
0.1
0.30
0.20
Philips Semiconductors
Product specification
BGY115A; BGY115B;
BGY115C/P; BGY115D
UHF amplifier modules
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 13
15