DISCRETE SEMICONDUCTORS DATA SHEET BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules Product specification Supersedes data of May 1994 File under Discrete Semiconductors, SC09 1996 May 13 Philips Semiconductors Product specification BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules FEATURES PINNING - SOT321A • 6 V nominal supply voltage1996 May 13 PIN • 1.2 W output power (BGY115A, BGY115B and BGY115D) • 1.4 W output power (BGY115C/P) • Easy control of output power by DC voltage DESCRIPTION 1 RF input 2 VC 3 VS 4 • SMD outline. RF output Flange ground APPLICATIONS • Hand-held transmitting equipment operating in the 824 to 849 MHz, 872 to 905 MHz, 890 to 915 MHz and 902 to 928 MHz frequency ranges. DESCRIPTION The BGY115A, BGY115B, BGY115C/P and BGY115D are three-stage UHF amplifier modules. Each module consists of three NPN silicon planar transistor chips mounted together with matching and bias circuit components on a metallized ceramic substrate. 1 2 3 4 Top view MSA487 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb = 25 °C. TYPE NUMBER MODE OF OPERATION f (MHz) VS (V) PL (W) Gp (dB) η (%) ZS; ZL (Ω) BGY115A CW 824 to 849 6 1.2 ≥27.8 typ. 50 50 BGY115B CW 872 to 905 6 1.2 ≥27.8 typ. 50 50 BGY115C/P CW 890 to 915 6 1.4 ≥28.5 typ. 50 50 BGY115D CW 902 to 928 6 1.2 ≥27.8 typ. 50 50 MIN. MAX. UNIT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS PARAMETER DC supply voltage BGY115A, BGY115B, BGY115D − 8.5 V BGY115C/P − 9 V VC DC control voltage − 4 V PD input drive power − 5 mW PL load power BGY115A, BGY115B, BGY115D − 1.6 W BGY115C/P − 1.8 W Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −30 +100 °C 1996 May 13 2 Philips Semiconductors Product specification BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules CHARACTERISTICS ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; VC ≤ 3.5 V; Tmb = 25 °C; unless otherwise specified. SYMBOL f PARAMETER CONDITIONS MIN. TYP. MAX. UNIT frequency BGY115A 824 − 849 MHz BGY115B 872 − 905 MHz BGY115C/P 890 − 915 MHz BGY115D 902 − 928 MHz IQ leakage current VC = 0; PD < −60 dBm − − 100 µA IC control current note 1 − − 500 µA PL load power BGY115A, BGY115B, BGY115D 1.2 − − W BGY115C/P 1.4 − − W BGY115A, BGY115B, BGY115D 27.8 − − dB BGY115C/P 28.5 − − dB Gp power gain note 1 η efficiency note 1 45 50 − % H2 second harmonic note 1 − − −40 dBc H3 third harmonic note 1 − − −40 dBc VSWRin input VSWR note 1 − − 3:1 stability PD = 0 to 6 dBm; VS = 4.8 to 8.5 V; VC = 0 to 3.5 V; VSWR ≤ 6 : 1 through all phases; note 2 − − −60 dBc isolation VC = 0 − − −40 dBm noise power bandwidth = 30 kHz; 45 MHz above f0; note 1 − − −90 dBm ruggedness note 3 Pn no degradation Notes 1. Adjust VC for PL = 1.2 W (BGY115A, BGY115B and BGY115D); PL = 1.4 W (BGY115C/P). 2. Adjust VC for PL ≤ 1.2 W (BGY115A, BGY115B and BGY115D); PL ≤ 1.4 W, VS = 4.8 to 8 V (BGY115C/P). 3. Adjust VC for PL = 1.6 W; VS = 8.5 V; VSWR ≤ 10 : 1; (BGY115A, BGY115B and BGY115D). Adjust VC for PL = 1.6 W; VS = 9 V, VSWR ≤ 6 : 1 (BGY115C/P). 1996 May 13 3 Philips Semiconductors Product specification BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules MSA908 2.0 MSA899 80 handbook, halfpage handbook, halfpage PL (W) η (%) 1.6 60 824 MHz 1.2 824 MHz 849 MHz 849 MHz 40 0.8 20 0.4 0 0 0 1 2 3 4 V C (V) 5 0 Fig.3 MSA903 (W) VS = 6 V 1.2 V S = 5.2 V 1.6 1.2 0.8 0.8 0.4 0.4 820 840 f (MHz) 0 40 860 0 40 80 120 T mb ( oC) ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; VC = 3.5 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 2 mW; VC = 3.5 V; Tmb = 25 °C. 1996 May 13 MSA906 2.0 PL 1.6 Fig.4 Efficiency as a function of load power; BGY115A, typical values. handbook, halfpage handbook, halfpage 0 800 1.6 1.2 ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; Tmb = 25 °C. Load power as a function of control voltage; BGY115A, typical values. 2.0 PL (W) 0.8 P L (W) ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; Tmb = 25 °C. Fig.2 0.4 Load power as a function of frequency; BGY115A, typical values. Fig.5 4 Load power as a function of mounting base temperature; BGY115A, typical values. Philips Semiconductors Product specification BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules MSA912 4 handbook, halfpage VC handbook, halfpage PL (W) 1.6 VSWR in (V) 3 MSA910 2.0 3.0 824 MHz 2.5 VC 849 MHz 1.2 2 2.0 VSWR in 0.8 1 1.5 0 800 0.4 0 1.0 820 20 840 f (MHz) 860 Control voltage and VSWR input as functions of frequency; BGY115A, typical values. Fig.7 MSA901 20 H 2 , H3 handbook, halfpage (dBc) 30 40 H2 50 H3 60 70 800 820 840 f (MHz) 860 ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.2 W; VS = 6 V; Tmb = 25 °C. Fig.8 1996 May 13 0 P D (dBm) 10 ZS = ZL = 50 Ω; VS = 6 V; VC = 3.5 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.2 W; VS = 6 V; Tmb = 25 °C. Fig.6 10 Harmonics as functions of frequency; BGY115A, typical values. 5 Load power as a function of drive power; BGY115A, typical values. Philips Semiconductors Product specification BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules MSA909 2.0 MSA900 80 handbook, halfpage handbook, halfpage PL η (%) (W) 1.6 60 872 MHz 872 MHz 905 MHz 1.2 905 MHz 40 0.8 20 0.4 0 0 0 1 2 3 4 V C (V) 5 0 1.6 Fig.10 Efficiency as a function of load power; BGY115B, typical values. MSA904 2.0 MSA907 2.0 handbook, halfpage handbook, halfpage PL (W) PL (W) 1.6 1.2 VS = 6 V 1.6 V S = 5.2 V 1.2 0.8 0.8 0.4 0.4 870 890 f (MHz) 0 40 910 ZS = ZL = 50 Ω; PD = 2 mW; VC = 3.5 V; Tmb = 25 °C. 0 40 80 120 T mb (o C) ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; VC = 3.5 V; f = 890 MHz. Fig.11 Load power as a function of frequency; BGY115B, typical values. 1996 May 13 1.2 ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; Tmb = 25 °C. Load power as a function of control voltage; BGY115B, typical values. 0 850 0.8 P L (W) ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; Tmb = 25 °C. Fig.9 0.4 Fig.12 Load power as a function of mounting base temperature; BGY115B, typical values. 6 Philips Semiconductors Product specification BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules MSA913 4 handbook, halfpage VC handbook, halfpage PL (W) VSWR in (V) MSA911 2.0 3.0 1.6 872 MHz 2.5 3 VC 905 MHz 1.2 2.0 2 VSWR in 1 0 850 0.8 1.5 0.4 0 1.0 870 20 890 f (MHz) 910 ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.2 W; VS = 6 V; Tmb = 25 °C. MSA902 (dBc) 30 40 50 H3 70 850 H2 870 890 f (MHz) 810 ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.2 W; VS = 6 V; Tmb = 25 °C. Fig.15 Harmonics as functions of frequency; BGY115B, typical values. 1996 May 13 P D (dBm) 10 Fig.14 Load power as a function of drive power; BGY115B, typical values. handbook, halfpage 60 0 ZS = ZL = 50 Ω; VS = 6 V; VC = 3.5 V; Tmb = 25 °C. Fig.13 Control voltage and VSWR input as functions of frequency; BGY115B, typical values. 20 H 2 , H3 10 7 Philips Semiconductors Product specification BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules MBD605 MBD604 60 2 η (%) PL (W) 915 MHz 890 MHz 915 MHz 40 890 MHz 1 20 0 0 0 1 2 3 4 0 5 0.8 0.4 1.2 1.6 ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; Tmb = 25 °C. Fig.16 Load power as a function of control voltage; BGY115C/P, typical values. Fig.17 Efficiency as a function of load power; BGY115C/P, typical values. MBD606 2 2 PL (W) VC (V) MBD607 2 handbook, halfpage PL (W) 915 MHz VS = 6 V PL (W) 890 MHz 5.2 V 1 1 0 860 880 900 920 0 −40 940 f (MHz) ZS = ZL = 50 Ω; PD = 2 mW; VC = 3.5 V; Tmb = 25 °C. 40 80 120 Tmb (oC) ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; VC = 3.5 V. Fig.18 Load power as a function of frequency; BGY115C/P, typical values. 1996 May 13 0 Fig.19 Load power as a function of mounting base temperature; BGY115C/P, typical values. 8 Philips Semiconductors Product specification BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules MBD615 4 handbook, halfpage VC (V) MBD616 60 3.0 handbook, halfpage η (%) VSWRin VC 2.5 3 40 2.0 2 VSWRin 20 1 0 860 1.5 880 900 920 f (MHz) 0 860 1.0 940 MBD617 H2, H3 (dBc) −30 −40 H3 −50 H2 −60 900 920 f (MHz) 940 ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.4 W; VS = 6 V; Tmb = 25 °C. Fig.22 Harmonics as functions of frequency; BGY115C/P, typical values. 1996 May 13 940 Fig.21 Efficiency as a function of frequency; BGY115C/P, typical values. handbook, halfpage 880 920 ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.4 W; VS = 6 V; Tmb = 25 °C. Fig.20 Control voltage and VSWR input as functions of frequency; BGY115C/P, typical values. −70 860 900 f (MHz) ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.4 W; VS = 6 V; Tmb = 25 °C. −20 880 9 Philips Semiconductors Product specification BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules MBD611 MBD612 2 80 η (%) P L (W) 902 MHz 60 902 MHz 928 MHz 928 MHz 40 1 20 0 0 0 1 2 3 4 5 0 0.8 0.4 1.2 1.6 ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; Tmb = 25 °C. Fig.23 Load power as a function of control voltage; BGY115D, typical values. Fig.24 Efficiency as a function of load power; BGY115D, typical values. MBD613 2 2 P L (W) VC (V) MBD614 2 handbook, halfpage PL VS = 6 V 902 MHz PL (W) (W) 928 MHz VS = 5.2 V 1 1 0 870 0 890 910 930 f (MHz) 950 0 40 80 120 Tmb ( oC) ZS = ZL = 50 Ω; PD = 2 mW; VS = 6 V; VC = 3.5 V. ZS = ZL = 50 Ω; PD = 2 mW; VC = 3.5 V; Tmb = 25 °C. Fig.25 Load power as a function of frequency; BGY115D, typical values. 1996 May 13 40 Fig.26 Load power as a function of mounting base temperature; BGY115D, typical values. 10 Philips Semiconductors Product specification BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules MBD610 4 handbook, halfpage VC (V) MBD609 2.0 3.0 PL (W) 1.6 VSWR in 902 MHz 2.5 3 VC 928 MHz 1.2 2.0 2 VSWR in 0.8 1 1.5 0.4 0 870 890 910 930 f (MHz) 1.0 950 0 20 Fig.27 Control voltage and VSWR input as functions of frequency; BGY115D, typical values. MBD608 30 40 50 H3 60 H2 890 910 930 f (MHz) 950 ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.2 W; VS = 6 V; Tmb = 25 °C. Fig.29 Harmonics as functions of frequency; BGY115D, typical values. 1996 May 13 P D (dBm) 10 Fig.28 Load power as a function of drive power; BGY115D, typical values. (dBc) 70 870 0 ZS = ZL = 50 Ω; VS = 6 V; VC = 3.5 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 2 mW; PL = 1.2 W; VS = 6 V; Tmb = 25 °C. 20 H 2 , H3 10 11 Philips Semiconductors Product specification BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules handbook, full pagewidth pin numbers 1 2 3 L2 L1 Z1 C1 C4 C3 C5 Z2 C2 RF input 4 C6 VC MSA914 VS RF output Fig.30 Test circuit. 90 handbook, full pagewidth 1 2 3 4 50 Ω input 50 Ω output VC VS Dimensions in mm. Fig.31 Printed-circuit board layout. 1996 May 13 12 MSA915 60 Philips Semiconductors Product specification BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules List of components (see Fig.30) COMPONENT DESCRIPTION VALUE CATALOGUE NO. C1, C4 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C2, C5 35 V tantalum capacitor 2.2 µF − C3, C6 multilayer ceramic chip capacitor 33 pF 2222 851 13339 L1, L2 Ferroxcube coil 5 µH 3122 108 20153 Z1, Z2 stripline; note 1 50 Ω − Note 1. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 2.2); thickness 1⁄32 inch. 1996 May 13 13 Philips Semiconductors Product specification BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules PACKAGE OUTLINE 25.0 24.6 handbook, full pagewidth 1.65 1.25 22.1 21.7 4.0 3.6 4.3 3.9 3.1 (4×) 2.9 13.4 13.0 5.1 4.9 2.4 2.2 1 2 3 0.55 (4×) 0.45 3.7 3.3 5.08 7.62 5.08 Dimensions in mm. Fig.32 SOT321A. 1996 May 13 14 MSA352 1.2 min 4 0.25 M (4×) 0.1 0.30 0.20 Philips Semiconductors Product specification BGY115A; BGY115B; BGY115C/P; BGY115D UHF amplifier modules DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 13 15