PHILIPS BLF2047L

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLF2047L/90
UHF power LDMOS transistor
Product specification
Supersedes data of 2000 Feb 17
2000 Mar 06
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L/90
FEATURES
PINNING
• High power gain
PIN
DESCRIPTION
• Easy power control
1
drain
• Excellent ruggedness
2
gate
• Source on underside eliminates DC isolators, reducing
common mode inductance
3
source, connected to flange
• Designed for broadband operation (1.8 to 2.0 GHz)
• Internal input and output matching for high gain and
efficiency.
handbook, halfpage
1
APPLICATIONS
• Common source class-AB operation for PCN and PCS
applications in the 1800 to 2000 MHz frequency range.
3
2
Top view
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistors encapsulated in a 2-lead SOT502A flange
package with a ceramic cap. The common source is
connected to the mounting flange.
MBK394
Fig.1 Simplified outline SOT502A.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
Two-tone, class-AB
f
(MHz)
f1 = 2000; f2 = 2000.1
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
26
90 (PEP)
>10.5
>30
≤−25
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
65
V
VGS
gate-source voltage
−
±15
V
ID
DC drain current
−
12
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Mar 06
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L/90
THERMAL CHARACTERISTICS
SYMBOL
Rth j-h
PARAMETER
CONDITIONS
VALUE
UNIT
0.81
K/W
thermal resistance from junction to heatsink Th = 25 °C; Ptot = 92 W; note 1
Note
1. Determined under specified RF operating conditions, based on maximum junction temperature.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 2.1 mA
65
−
−
V
VGSth
gate-source threshold voltage
VDS = 10 V; ID = 210 mA
1.5
−
3.5
V
IDSS
drain-source leakage current
VGS = 0; VDS = 26 V
−
−
15
µA
IDSX
on-state drain current
VGS =VGSth + 9 V; VDS = 10 V
27
−
−
A
IGSS
gate leakage current
VGS = ±15 V; VDS = 0
−
−
38
nA
gfs
forward transconductance
VDS = 10 V; ID = 7.5 A
−
6.0
−
S
RDSon
drain-source on-state resistance
VGS = VGSth + 9 V; ID = 7.5 A
−
0.11
−
Ω
Crss
feedback capacitance
VGS = 0; VDS = 26 V; f = 1 MHz;
note 1
−
5.1
−
pF
Note
1. The value of capacitance is that of the die only.
2000 Mar 06
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L/90
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th = 25 °C; Rth j-h = 0.81 K/W; unless otherwise specified.
f
(MHz)
MODE OF OPERATION
f1 = 2000; f2 = 2000.1
Two-tone, class-AB
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
26
525
90 (PEP)
>10.5
>30
≤−25
Ruggedness in class-AB operation
The BLF2047L/90 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: VDS = 26 V; IDQ = 525 mA; PL = 90 W; f = 2000 MHz (single tone).
MCD933
15
handbook, halfpage
Gp
MCD928
15
50
ηD
handbook, halfpage
(%)
Gp
40
(dB)
(dB)
Gp
(1)
(2)
(3)
Gp
ηD
(1) (2)
30
10
ηD
5
40
0
80
20
20
10
10
5
0
120
PL (PEP) (W)
0
40
80
0
120
PL (PEP) (W)
VDS = 26 V; IDQ = 525 mA; Th ≤ 25 °C;
f1 = 2000 MHz; f2 = 2000.1 MHz.
VDS = 26 V; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz.
(1) IDQ = 650 mA.
(2) IDQ = 525 mA.
(3) IDQ = 400 mA.
Fig.2
Fig.3
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
2000 Mar 06
(%)
40
30
10
(3)
50
ηD
4
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L/90
MCD929
0
MCD930
0
handbook, halfpage
handbook, halfpage
dim
(dBc)
d3
(dBc)
−20
−20
(1)
d3
−40
−60
(2)
−40
d5
d7
0
40
80
−60
120
PL (PEP) (W)
0
40
80
120
PL (PEP) (W)
VDS = 26 V; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz.
(1) IDQ = 400 mA.
(2) IDQ = 525 mA.
(3) IDQ = 650 mA.
VDS = 26 V; IDQ = 525 mA; Th ≤ 25 °C;
f1 = 2000 MHz; f2 = 2000.1 MHz.
Fig.4
(3)
Intermodulation distortion products as
functions of peak envelope load power;
typical values.
Fig.5
Third-order intermodulation distortion as a
function of peak envelope load power;
typical values.
MGT004
MGT003
4
6
handbook, halfpage
handbook, halfpage
ZL
(Ω)
Zi
(Ω)
RL
2
4
xi
0
2
ri
−2
0
XL
−4
1.8
2
f (GHz)
−2
1.8
2.2
2
f (GHz)
VDS = 26 V; ID = 525 mA; PL = 90 W; Th ≤ 25 °C.
VDS = 26 V; ID = 525 mA; PL = 90 W; Th ≤ 25 °C.
Fig.6
Fig.7
Load impedance as a function of frequency
(series components); typical values.
2000 Mar 06
5
2.2
Input impedance as a function of frequency
(series components); typical values.
Philips Semiconductors
Product specification
UHF power LDMOS transistor
MCD931
15
handbook, halfpage
BLF2047L/90
handbook, halfpage
ACPR
(dB)
(%)
Gp
(dB)
20
Gp
MCD932
0
25
ηD
−20
15
10
−40
ηD
10
(1)
(2)
−60
(3)
5
5
0
5
10
PL (W)
−80
0
15
0
10
5
PL (W)
15
VDS = 26 V; IDQ = 465 mA; Th ≤ 25 °C; f = 1960 MHz;
CDMA mode.
VDS = 26 V; IDQ = 465 mA; Th ≤ 25 °C; f = 1960 MHz; CDMA mode.
(1) Channel spacing/Bandwidth: 2.25 MHz/1 MHz.
(2) Channel spacing/Bandwidth: 1.25 MHz/12.5 kHz.
(3) Channel spacing/Bandwidth: 885 kHz/30 kHz.
CDMA conditions
CDMA conditions
CHANNEL
WALSH CODE
CHANNEL
WALSH CODE
Pilot
0
Pilot
0
Sync
32
Sync
32
Paging
1
Paging
1
Traffic
8 to 13
Traffic
8 to 13
Fig.9
Fig.8
Power gain and drain efficiency as functions
of average load power; typical values.
2000 Mar 06
6
Adjacent channel power reduction as a
function of average load power; typical
values.
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L/90
F1
handbook, full pagewidth
C6
R1
C15
C13
R2
Vdc
Vgate
C5
C12
C16
C17
L13
L4
C4
C14
C11
C10
L10
L6
L11
L2
L15
L17
L8
input
50 Ω
C3
L20
C9
L1
L3
C2
L5
L7
L12
L9
L14
L16
C7
C1
L18
L19
output
50 Ω
C8
MGT005
Fig.10 2 GHz class-AB test circuit.
2000 Mar 06
7
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L/90
List of components
See Figs 10 and 11.
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C2, C7, C8 Tekelec variable capacitor; type 37271
0.6 to 4.5 pF
C3, C9
multilayer ceramic chip capacitor; note 1
12 pF
C4, C10
multilayer ceramic chip capacitor; note 2
12 pF
C5, C12, C16
electrolytic capacitor
4.5 µF; 50 V
C6, C11, C15
multilayer ceramic chip capacitor; note 1
1 nF
C13, C17
electrolytic capacitor
100 µF; 63 V
2222 037 58101
C14
multilayer ceramic chip capacitor
100 nF
2222 581 16641
F1
Ferroxcube chip-bead 8DS3/3/8/9-4S2
L1
stripline; note 3
4330 030 36301
50 Ω
2.9 × 2.4 mm
L2
10.8 Ω
4 × 16.3 mm
L3
50 Ω
3.7 × 2.4 mm
L4
6Ω
2 × 30.8 mm
L5
50 Ω
3.6 × 2.4 mm
L6
9Ω
3 × 19.9 mm
L7
50 Ω
7.8 × 2.4 mm
L8
18.5 Ω
4 × 8.8 mm
L9
24.4 Ω
5 × 6.3 mm
L10
5.1 Ω
7 × 37 mm
L11
5.1 Ω
7 × 40.9 mm
L12
25.4 Ω
10.1 × 6 mm
L13
5.7 Ω
2.4 × 32.8 mm
L14
25.4 Ω
6.4 × 6 mm
L15
10 Ω
3.5 × 20.7 mm
L16
50 Ω
10.8 × 2.4 mm
L17
11.8 Ω
3 × 7.9 mm
L18
50 Ω
2.3 × 2.4 mm
L19
50 Ω
3 × 2.4 mm
L20
50 Ω
5.5 × 2.4 mm
R1, R2
10 Ω, 0.6 W
metal film resistor
2322 156 11009
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr = 2.2); thickness 0.79 mm.
2000 Mar 06
8
Philips Semiconductors
Product specification
UHF power LDMOS transistor
handbook, full pagewidth
BLF2047L/90
50
50
95
BLF2047L INPUT
BLF2047L/90 OUTPUT
PH990118
Vdd
Vgs
C6
R2
C17
C16
C5
R1
F1
C13
C11
C10
C4
C15 C14
C12
C9
C3
C2
C1
C7
BLF2047L INPUT
C8
BLF2047L/90 OUTPUT
PH990118
MCD927
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 2.2), thickness 0.79 mm.
The other side is unetched and serves as a ground plane.
Fig.11 Component layout for 2 GHz class-AB test circuit.
2000 Mar 06
9
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L/90
PACKAGE OUTLINE
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D1
U1
B
q
c
C
1
H
L
E1
p
U2
E
w1 M A M B M
A
2
w2 M C M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.99
12.83
12.57
0.15
0.08
inches
0.186
0.157
0.505 0.006
0.495 0.003
OUTLINE
VERSION
D
E
E1
F
H
L
p
Q
q
U1
U2
w1
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
3.38
3.12
1.70
1.45
27.94
34.16
33.91
9.91
9.65
0.25
0.51
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.067
1.100
0.057
1.345
1.335
0.390
0.380
0.01
0.02
D1
0.045 0.785
0.035 0.745
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-10-13
99-12-28
SOT502A
2000 Mar 06
0.210 0.133
0.170 0.123
10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L/90
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Mar 06
11
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SCA 69
© Philips Electronics N.V. 2000
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Printed in The Netherlands
603516/02/pp12
Date of release: 2000
Mar 06
Document order number:
9397 750 06894