DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2047L/90 UHF power LDMOS transistor Product specification Supersedes data of 2000 Feb 17 2000 Mar 06 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047L/90 FEATURES PINNING • High power gain PIN DESCRIPTION • Easy power control 1 drain • Excellent ruggedness 2 gate • Source on underside eliminates DC isolators, reducing common mode inductance 3 source, connected to flange • Designed for broadband operation (1.8 to 2.0 GHz) • Internal input and output matching for high gain and efficiency. handbook, halfpage 1 APPLICATIONS • Common source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range. 3 2 Top view DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. MBK394 Fig.1 Simplified outline SOT502A. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Two-tone, class-AB f (MHz) f1 = 2000; f2 = 2000.1 VDS (V) PL (W) Gp (dB) ηD (%) dim (dBc) 26 90 (PEP) >10.5 >30 ≤−25 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage − ±15 V ID DC drain current − 12 A Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2000 Mar 06 2 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047L/90 THERMAL CHARACTERISTICS SYMBOL Rth j-h PARAMETER CONDITIONS VALUE UNIT 0.81 K/W thermal resistance from junction to heatsink Th = 25 °C; Ptot = 92 W; note 1 Note 1. Determined under specified RF operating conditions, based on maximum junction temperature. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 2.1 mA 65 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 210 mA 1.5 − 3.5 V IDSS drain-source leakage current VGS = 0; VDS = 26 V − − 15 µA IDSX on-state drain current VGS =VGSth + 9 V; VDS = 10 V 27 − − A IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 38 nA gfs forward transconductance VDS = 10 V; ID = 7.5 A − 6.0 − S RDSon drain-source on-state resistance VGS = VGSth + 9 V; ID = 7.5 A − 0.11 − Ω Crss feedback capacitance VGS = 0; VDS = 26 V; f = 1 MHz; note 1 − 5.1 − pF Note 1. The value of capacitance is that of the die only. 2000 Mar 06 3 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047L/90 APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth j-h = 0.81 K/W; unless otherwise specified. f (MHz) MODE OF OPERATION f1 = 2000; f2 = 2000.1 Two-tone, class-AB VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) dim (dBc) 26 525 90 (PEP) >10.5 >30 ≤−25 Ruggedness in class-AB operation The BLF2047L/90 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; IDQ = 525 mA; PL = 90 W; f = 2000 MHz (single tone). MCD933 15 handbook, halfpage Gp MCD928 15 50 ηD handbook, halfpage (%) Gp 40 (dB) (dB) Gp (1) (2) (3) Gp ηD (1) (2) 30 10 ηD 5 40 0 80 20 20 10 10 5 0 120 PL (PEP) (W) 0 40 80 0 120 PL (PEP) (W) VDS = 26 V; IDQ = 525 mA; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz. VDS = 26 V; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz. (1) IDQ = 650 mA. (2) IDQ = 525 mA. (3) IDQ = 400 mA. Fig.2 Fig.3 Power gain and drain efficiency as functions of peak envelope load power; typical values. 2000 Mar 06 (%) 40 30 10 (3) 50 ηD 4 Power gain and drain efficiency as functions of peak envelope load power; typical values. Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047L/90 MCD929 0 MCD930 0 handbook, halfpage handbook, halfpage dim (dBc) d3 (dBc) −20 −20 (1) d3 −40 −60 (2) −40 d5 d7 0 40 80 −60 120 PL (PEP) (W) 0 40 80 120 PL (PEP) (W) VDS = 26 V; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz. (1) IDQ = 400 mA. (2) IDQ = 525 mA. (3) IDQ = 650 mA. VDS = 26 V; IDQ = 525 mA; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz. Fig.4 (3) Intermodulation distortion products as functions of peak envelope load power; typical values. Fig.5 Third-order intermodulation distortion as a function of peak envelope load power; typical values. MGT004 MGT003 4 6 handbook, halfpage handbook, halfpage ZL (Ω) Zi (Ω) RL 2 4 xi 0 2 ri −2 0 XL −4 1.8 2 f (GHz) −2 1.8 2.2 2 f (GHz) VDS = 26 V; ID = 525 mA; PL = 90 W; Th ≤ 25 °C. VDS = 26 V; ID = 525 mA; PL = 90 W; Th ≤ 25 °C. Fig.6 Fig.7 Load impedance as a function of frequency (series components); typical values. 2000 Mar 06 5 2.2 Input impedance as a function of frequency (series components); typical values. Philips Semiconductors Product specification UHF power LDMOS transistor MCD931 15 handbook, halfpage BLF2047L/90 handbook, halfpage ACPR (dB) (%) Gp (dB) 20 Gp MCD932 0 25 ηD −20 15 10 −40 ηD 10 (1) (2) −60 (3) 5 5 0 5 10 PL (W) −80 0 15 0 10 5 PL (W) 15 VDS = 26 V; IDQ = 465 mA; Th ≤ 25 °C; f = 1960 MHz; CDMA mode. VDS = 26 V; IDQ = 465 mA; Th ≤ 25 °C; f = 1960 MHz; CDMA mode. (1) Channel spacing/Bandwidth: 2.25 MHz/1 MHz. (2) Channel spacing/Bandwidth: 1.25 MHz/12.5 kHz. (3) Channel spacing/Bandwidth: 885 kHz/30 kHz. CDMA conditions CDMA conditions CHANNEL WALSH CODE CHANNEL WALSH CODE Pilot 0 Pilot 0 Sync 32 Sync 32 Paging 1 Paging 1 Traffic 8 to 13 Traffic 8 to 13 Fig.9 Fig.8 Power gain and drain efficiency as functions of average load power; typical values. 2000 Mar 06 6 Adjacent channel power reduction as a function of average load power; typical values. Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047L/90 F1 handbook, full pagewidth C6 R1 C15 C13 R2 Vdc Vgate C5 C12 C16 C17 L13 L4 C4 C14 C11 C10 L10 L6 L11 L2 L15 L17 L8 input 50 Ω C3 L20 C9 L1 L3 C2 L5 L7 L12 L9 L14 L16 C7 C1 L18 L19 output 50 Ω C8 MGT005 Fig.10 2 GHz class-AB test circuit. 2000 Mar 06 7 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047L/90 List of components See Figs 10 and 11. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2, C7, C8 Tekelec variable capacitor; type 37271 0.6 to 4.5 pF C3, C9 multilayer ceramic chip capacitor; note 1 12 pF C4, C10 multilayer ceramic chip capacitor; note 2 12 pF C5, C12, C16 electrolytic capacitor 4.5 µF; 50 V C6, C11, C15 multilayer ceramic chip capacitor; note 1 1 nF C13, C17 electrolytic capacitor 100 µF; 63 V 2222 037 58101 C14 multilayer ceramic chip capacitor 100 nF 2222 581 16641 F1 Ferroxcube chip-bead 8DS3/3/8/9-4S2 L1 stripline; note 3 4330 030 36301 50 Ω 2.9 × 2.4 mm L2 10.8 Ω 4 × 16.3 mm L3 50 Ω 3.7 × 2.4 mm L4 6Ω 2 × 30.8 mm L5 50 Ω 3.6 × 2.4 mm L6 9Ω 3 × 19.9 mm L7 50 Ω 7.8 × 2.4 mm L8 18.5 Ω 4 × 8.8 mm L9 24.4 Ω 5 × 6.3 mm L10 5.1 Ω 7 × 37 mm L11 5.1 Ω 7 × 40.9 mm L12 25.4 Ω 10.1 × 6 mm L13 5.7 Ω 2.4 × 32.8 mm L14 25.4 Ω 6.4 × 6 mm L15 10 Ω 3.5 × 20.7 mm L16 50 Ω 10.8 × 2.4 mm L17 11.8 Ω 3 × 7.9 mm L18 50 Ω 2.3 × 2.4 mm L19 50 Ω 3 × 2.4 mm L20 50 Ω 5.5 × 2.4 mm R1, R2 10 Ω, 0.6 W metal film resistor 2322 156 11009 Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr = 2.2); thickness 0.79 mm. 2000 Mar 06 8 Philips Semiconductors Product specification UHF power LDMOS transistor handbook, full pagewidth BLF2047L/90 50 50 95 BLF2047L INPUT BLF2047L/90 OUTPUT PH990118 Vdd Vgs C6 R2 C17 C16 C5 R1 F1 C13 C11 C10 C4 C15 C14 C12 C9 C3 C2 C1 C7 BLF2047L INPUT C8 BLF2047L/90 OUTPUT PH990118 MCD927 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 2.2), thickness 0.79 mm. The other side is unetched and serves as a ground plane. Fig.11 Component layout for 2 GHz class-AB test circuit. 2000 Mar 06 9 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047L/90 PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.99 12.83 12.57 0.15 0.08 inches 0.186 0.157 0.505 0.006 0.495 0.003 OUTLINE VERSION D E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D1 0.045 0.785 0.035 0.745 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-10-13 99-12-28 SOT502A 2000 Mar 06 0.210 0.133 0.170 0.123 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047L/90 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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