DISCRETE SEMICONDUCTORS DATA SHEET PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors PINNING - SOT443A FEATURES • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR 1 collector • Gold metallization realizes very stable characteristics and excellent lifetime 2 emitter 3 base connected to flange DESCRIPTION • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching ensures good stability and easy broadband use. handbook, halfpage 1 c APPLICATIONS b • Common base class-B broadband amplifiers under CW conditions in military and professional applications. 3 e 2 DESCRIPTION Top view MAM314 NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance up to Tmb = 25 °C in a common base class-B wideband amplifier. f (GHz) VCC (V) PL (W) Gp (dB) ηC (%) PZ1418B30U 1.4 to 1.8 28 ≥27 ≥7.3 ≥38 see Figs 6 and 7 PZ1721B25U 1.7 to 2.1 28 ≥25 ≥7 ≥35 see Figs 11 and 12 PZ2024B20U 2 to 2.4 28 ≥20 ≥6 ≥35 see Figs 16 and 17 TYPE NUMBER Zi; ZL (Ω) WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 19 2 Philips Semiconductors Product specification PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 15 V VCES collector-emitter voltage RBE = 0 Ω − 35 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 4 A Ptot total power dissipation − 45 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature − 235 °C Tmb ≤ 75 °C MGD970 50 handbook, Ptot (W) 40 30 20 10 0 0 Fig.2 1997 Feb 19 50 100 150 200 Tmb (°C) Power derating curve as a function of mounting base temperature. 3 Philips Semiconductors Product specification PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting-base Tj = 75 °C 2.2 K/W Rth mb-h thermal resistance from mounting-base to heatsink Tj = 75 °C; note 1 0.2 K/W Note 1. See “Mounting recommendations in the General part of handbook SC15”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS collector cut-off current MAX. UNIT VCB = 40 V; IE = 0 10 mA VCB = 30 V; IE = 0 5 mA ICES collector cut-off current VCE = 35 V; RBE = 0 50 mA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 200 µA APPLICATION INFORMATION PZ1418B30U Microwave performance up to Tmb = 25 °C in a common base class B wideband amplifier. TYPE NUMBER PZ1418B30U handbook, full pagewidth f (GHz) VCC (V) PL (W) Gp (dB) ηC (%) Zi; ZL (Ω) 1.4 to 1.8 28 ≥27 typ. 35 ≥7.3 typ. 8.4 ≥38 typ. 45 see Figs 6 and 7 ,,,,, ,,,,, ,,,,, ,, ,,,,, ,,,,, ,,,,, ,,,,, ,,,,, 2 input 50 Ω 4 5 5 12 21 2 5.5 2 output 50 Ω 4 0.65 0.65 100 pF (ATC) 6.5 8.5 MGK064 Dimensions in mm. Substrate: Epsilam printed-circuit board. Thickness: 0.635 mm. Permittivity: εr = 10. Fig.3 Wideband test circuit board for 1.4 to 1.8 GHz operation (PZ1418B30U). 1997 Feb 19 4 Philips Semiconductors Product specification PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors MGD984 40 MGL066 40 handbook, halfpage handbook, halfpage (1) PL (W) PL PL (W) (2) (3) 30 ηC (%) 20 50 ηC 40 VSWR 2 VSWR 0 0 2 4 Pi (W) 6 1.4 Class-B operation; VCC = 28 V; Tmb = 25 °C. (1) 1.4 GHz. (2) 1.6 GHz. (3) 1.8 GHz. Fig.4 1.6 1.7 1 1.8 1.9 f (GHz) Class-B operation; VCC = 28 V; Tmb = 25 °C; Pi = 5 W. Fig.5 Load power as a function of input power; typical values for PZ1418B30U. 1997 Feb 19 1.5 5 Load power, efficiency and VSWR as functions of frequency; typical value for PZ1418B30U. Philips Semiconductors Product specification PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors 1 handbook, full pagewidth 0.5 2 1.4 GHz 0.2 5 1.6 1.8 10 +j 0 0.2 0.5 1 2 5 10 5Ω −j ∞ 10 5 0.2 2 0.5 MGL024 1 Zo = 5 Ω. Fig.6 Input impedance as a function of frequency; typical values for PZ1418B30U. 1 handbook, full pagewidth 0.5 2 0.2 5 +j 0 0.2 −j 0.5 1.6 5 Ω 1 10 2 5 10 ∞ 1.4 GHz 1.8 10 5 0.2 2 0.5 1 MGL025 Zo = 5 Ω. Fig.7 Optimum load impedance as a function of frequency; typical values for PZ1418B30U. 1997 Feb 19 6 Philips Semiconductors Product specification PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors PZ1721B25U Microwave performance up to Tmb = 25 °C in a common base class B wideband amplifier. TYPE NUMBER PZ1721B25U handbook, full pagewidth f (GHz) VCC (V) PL (W) Gp (dB) ηC (%) Zi; ZL (Ω) 1.7 to 2.1 28 ≥25 typ. 30 ≥7 typ. 7.8 ≥35 typ. 44 see Figs 11 and 12 ,,,,,, ,,,,, ,,,,,, ,,,,, ,, ,,,,,, ,,,,, 2 5 4 input 50 Ω 3 10 10 3 2 3 5 2 output 50 Ω 5 0.65 0.65 4 5 4 100 pF (ATC) MGK063 Dimensions in mm. Substrate: Epsilam printed-circuit board. Thickness: 0.635 mm. Permittivity: εr = 10. Fig.8 Wideband test circuit board for 1.7 to 2.1 GHz operation (PZ1721B25U). MGL008 40 MGL014 35 handbook, halfpage PL (W) PL PL (W) (1) (2) (3) ηC (%) 50 25 ηC 20 40 VSWR 2 VSWR 0 0 2 4 Pi (W) 6 1.7 Class-B operation; VCC = 28 V; Tmb = 25 °C. (1) 1.7 GHz. 2.0 1 2.2 2.1 f (GHz) Fig.10 Load power, efficiency and VSWR as functions of frequency; typical values for PZ1721B25U. Load power as a function of input power; typical values for PZ1721B25U. 1997 Feb 19 1.9 Class-B operation; VCC = 28 V; Tmb = 25 °C; Pi = 5 W. (2) 1.9 GHz. (3) 2.1 GHz. Fig.9 1.8 7 Philips Semiconductors Product specification PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors 1 handbook, full pagewidth 0.5 2 1.7 GHz 0.2 5 1.9 2.1 10 +j 0 0.2 0.5 1 2 5 10 5Ω −j ∞ 10 5 0.2 2 0.5 MGL026 1 Zo = 5 Ω. Fig.11 Input impedance as a function of frequency; typical values for PZ1721B25U. 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 −j 0.5 5Ω 1 1.9 2.1 2 5 10 ∞ 1.7 GHz 10 5 0.2 2 0.5 1 MGL027 Zo = 5 Ω. Fig.12 Optimum load impedance as a function of frequency; typical values for PZ1721B25U. 1997 Feb 19 8 Philips Semiconductors Product specification PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors PZ2024B20U Microwave performance up to Tmb = 25 °C in a common base class B wideband amplifier. TYPE NUMBER PZ2024B20U dbook, full pagewidth f (GHz) VCC (V) PL (W) Gp (dB) ηC (%) Zi; ZL (Ω) 2 to 2.4 28 ≥20 typ. 26 ≥6 typ. 7 ≥35 typ. 42 see Figs 16 and 17 ,, , ,, ,, , ,,,,,,, ,, ,,,,,,,, , ,, ,, , ,, ,, ,,,,,,, ,,,,,,,, ,,,,, ,,,,,,, ,,, ,,,,,,, ,, 6 5.5 5 input 50 Ω 1.5 1.5 0.8 5 0.8 2 14 output 50 Ω 6 1.3 100 pF (ATC) 5.5 2 2.5 4 3 3.7 2.7 2.5 2.5 4.5 30 2.5 30 MSA109 Dimensions in mm. Substrate: Epsilam printed-circuit board. Thickness: 0.635 mm. Permittivity: εr = 10. Fig.13 Wideband test circuit board for 2 to 2.4 GHz operation (PZ2024B20U). MGL016 40 PL (W) f = 2 GHz PL (W) MGL015 35 handbook, halfpage ηC (%) PL 2.2 50 25 2.4 ηC 40 20 VSWR 2 VSWR 0 0 2 4 Pi (W) 2.0 6 2.1 2.2 2.3 1 2.5 2.4 f (GHz) Class-B operation; VCC = 28 V; Tmb = 25 °C; Pi = 5 W. Class-B operation; VCC = 28 V; Tmb = 25 °C. Fig.15 Load power, efficiency and VSWR as functions of frequency; typical values for PZ2024B20U. Fig.14 Load power as a function of input power; typical values for PZ2024B20U. 1997 Feb 19 9 Philips Semiconductors Product specification PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors 1 handbook, full pagewidth 0.5 2 2 GHz 2.2 0.2 5 2.4 10 +j 0 0.2 0.5 1 2 5 10 5Ω −j ∞ 10 5 0.2 2 0.5 MGL028 1 Zo = 5 Ω. Fig.16 Input impedance as a function of frequency; typical values for PZ2024B20U. 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 5Ω 1 0.5 2 5 10 2.2 −j 2 GHz ∞ 10 2.4 5 0.2 2 0.5 1 MGL029 Zo = 5 Ω. Fig.17 Optimum load impedance as a function of frequency; typical values for PZ2024B20U. 1997 Feb 19 10 Philips Semiconductors Product specification PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors PACKAGE OUTLINE 24 max handbook, full pagewidth 0.5 Y 0.1 6.4 max 3.5 2.9 3 1.7 max seating plane Y 3.1 1 4 min 0.5 X X 10.5 max 3.4 3.2 10.5 max 23 max 0.5 X 2 MBC663 16.5 0.5 Y Dimensions in mm. Torque on nut: max 0.5 Nm. Recommended screw: M3 Fig.18 SOT443A. 1997 Feb 19 11 Philips Semiconductors Product specification PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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