DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW 2PA1774M series PNP general purpose transistor Product data sheet 2004 Feb 19 NXP Semiconductors Product data sheet PNP general purpose transistor 2PA1774M series FEATURES QUICK REFERENCE DATA • Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) SYMBOL • Board space 1.3 mm × 0.9 mm • Power dissipation comparable to SOT23. APPLICATIONS PARAMETER MAX. UNIT VCEO collector-emitter voltage −40 V IC collector current (DC) −100 mA ICM peak collector current −200 mA PINNING • General purpose small signal DC PIN • Low and medium frequency AC applications • Mobile communications, digital (still) cameras, PDAs, PCMCIA cards. DESCRIPTION 1 base 2 emitter 3 collector DESCRIPTION PNP general purpose transistor in a SOT883 leadless ultra small plastic package. NPN complement: 2PC4617M series. 3 handbook, halfpage 2 1 3 MARKING 1 2 TYPE NUMBER Bottom view MARKING CODE 2PA1774QM MAM469 PB 2PA1774RM PA 2PA1774SM PC Fig.1 Simplified outline (SOT883) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME 2PA1774QM − 2PA1774RM − 2PA1774SM − 2004 Feb 19 DESCRIPTION VERSION leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883 2 NXP Semiconductors Product data sheet PNP general purpose transistor 2PA1774M series LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −50 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −100 mA Ptot total power dissipation note 1 − 250 mW note 2 − 430 mW Tamb ≤ 25 °C Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line. 2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS VALUE UNIT note 1 500 K/W note 2 290 K/W in free air Notes 1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line. 2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2. 2004 Feb 19 3 NXP Semiconductors Product data sheet PNP general purpose transistor 2PA1774M series CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS MIN. MAX. UNIT VCB = −30 V; IE = 0 − −100 nA VCB = −30 V; IE = 0; Tj = 150 °C − −5 μA − −100 nA 2PA1774QM 120 270 2PA1774RM 180 390 collector-base cut-off current IEBO emitter-base cut-off current VEB = −4 V; IC = 0 hFE DC current gain VCE = −6 V; IC = −1 mA 270 560 VCEsat collector-emitter saturation voltage 2PA1774SM IC = −50 mA; IB = −5 mA; note 1 − −200 mV Cc collector capacitance IE = ie = 0; VCB = −12 V; f = 1 MHz − 2.2 pF fT transition frequency VCE = −12 V; IC = −2 mA; f = 100 MHz 100 − MHz Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. MDB663 103 handbook, halfpage VBE (mV) −1000 (1) hFE MDB664 −1200 handbook, halfpage (2) (1) −800 (3) 102 (2) −600 (3) −400 10 −10−1 −1 −10 −200 −10−1 −102 −103 IC (mA) −10 −102 −103 IC (mA) VCE = −6 V. (1) Tamb = −55 °C. VCE = −6 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. (3) Tamb = −55 °C. Fig.3 Fig.2 DC current gain; typical values. 2004 Feb 19 −1 4 Base-emitter voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet PNP general purpose transistor 2PA1774M series MDB665 −103 handbook, halfpage MDB666 −1200 handbook, halfpage VBEsat (mV) −1000 VCEsat (mV) (1) −800 (2) −102 −600 (1) (3) (2) −400 (3) −10 −10−1 −1 −10 −200 −10−1 −102 −103 IC (mA) IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. MDB667 −0.2 handbook, halfpage (1) IC (2) (A) (3) −0.16 (4) (5) −1 −10 2 IC (mA) −10 Base-emitter saturation voltage as a function of collector current; typical values. MDB668 103 RCEsat (Ω) (6) 102 (7) −0.12 (8) (9) −0.08 (1) 10 (2) (10) −0.04 (3) 0 −2 0 (1) (2) (3) (4) IB = −2.7 mA. IB = −2.43 mA. IB = −2.16 mA. IB = −1.89 mA. −4 −6 1 −10−1 −8 −10 VCE (V) (5) IB = −1.62 mA. (9) IB = −0.54 mA. (6) IB = −1.35 mA. (7) IB = −1.08 mA. (8) IB = −0.81 mA. (10) IB = −0.27 mA. IC/IB = 10. −102 −103 IC (mA) (3) Tamb = −55 °C. Collector current as a function of collector-emitter voltage; typical values. 2004 Feb 19 −10 (1) Tamb = 150 °C. (2) Tamb = 25 °C. Fig.7 Fig.6 −1 5 Collector-emitter equivalent on-resistance as a function of collector current; typical values. NXP Semiconductors Product data sheet PNP general purpose transistor 2PA1774M series PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION SOT883 2004 Feb 19 REFERENCES IEC JEDEC JEITA SC-101 6 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 NXP Semiconductors Product data sheet PNP general purpose transistor 2PA1774M series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Feb 19 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/01/pp8 Date of release: 2004 Feb 19 Document order number: 9397 750 11698