DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VPN 15 V low VCE(sat) NPN/PNP transistor Product data sheet Supersedes data of 2001 Nov 07 2005 Jan 11 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor FEATURES PBSS2515VPN QUICK REFERENCE DATA • 300 mW total power dissipation SYMBOL • Very small 1.6 × 1.2 mm ultra thin package VCEO collector-emitter voltage 15 V ICM peak collector current 1 A RCEsat equivalent on-resistance <500 mΩ • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage PARAMETER MAX. UNIT • High current capability • Improved thermal behaviour due to flat lead PINNING • Replaces two SC75/SC89 packaged low VCEsat transistors on same PCB area PIN DESCRIPTION • Reduces required PCB area 1, 4 emitter TR1; TR2 • Reduced pick and place costs. 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 APPLICATION • General purpose switching and muting • Low frequency driver circuits • LCD backlighting handbook, halfpage 6 5 4 6 • Audio frequency general purpose amplifier applications 5 • Battery driven equipment (mobile phones, video cameras and hand-held devices). 4 TR2 TR1 DESCRIPTION 1 NPN/PNP low VCEsat transistor pair in a SOT666 plastic package. 2 3 1 2 3 MAM443 Top view MARKING TYPE NUMBER MARKING CODE PBSS2515VPN Fig.1 Simplified outline (SOT666) and symbol. N8 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS2515VPN 2005 Jan 11 − DESCRIPTION plastic surface mounted package; 6 leads 2 VERSION SOT666 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 500 mA ICM peak collector current − 1 A IBM peak base current − 100 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C − 300 mW Tamb ≤ 25 °C; note 1 Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient notes 1 and 2 Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. 2005 Jan 11 3 VALUE UNIT 416 K/W NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor; for the PNP transistor with negative polarity ICBO collector-base cut-off current IEBO emitter-base cut-off current hFE DC current gain VCEsat collector-emitter saturation voltage VCB = 15 V; IE = 0 A − − 100 nA VCB = 15 V; IE = 0 A; Tj = 150 °C − − 50 μA VEB = 5 V; IC = 0 A − − 100 nA VCE = 2 V; IC = 10 mA 200 − − VCE = 2 V; IC = 100 mA; note 1 150 − − VCE = 2 V; IC = 500 mA; note 1 90 − − IC = 10 mA; IB = 0.5 mA − − 25 mV IC = 200 mA; IB = 10 mA − − 150 mV IC = 500 mA; IB = 50 mA; note 1 − − 250 mV RCEsat equivalent on-resistance IC = 500 mA; IB = 50 mA; note 1 − 300 <500 mΩ VBEsat base-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1 − − 1.1 V VBE base-emitter turn-on voltage VCE = 2 V; IC = 100 mA; note 1 − − 0.9 V NPN transistor fT transition frequency IC = 100 mA; VCE = 5 V; f = 100 MHz 250 420 − MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0 A; f = 1MHz − 4.4 6 pF PNP transistor fT transition frequency IC = −100 mA; VCE = −5 V; f = 100 MHz 100 280 − MHz Cc collector capacitance VCB = −10 V; IE = Ie = 0 A; f = 1MHz − − 10 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2005 Jan 11 4 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN MLD643 600 MLD645 1200 VBE handbook, halfpage handbook, halfpage (1) (mV) hFE 1000 (1) 400 800 (2) (2) 600 200 (3) (3) 400 0 10−1 1 10 102 IC (mA) 200 10−1 103 1 TR1 (NPN) VCE = 2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR1 (NPN) VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MLD647 103 handbook, halfpage 10 102 IC (mA) 103 Base-emitter voltage as a function of collector current; typical values. MLD646 1200 handbook, halfpage VBEsat VCEsat (mV) (mV) 1000 (1) 102 800 (1) (2) 600 (2) (3) 10 (3) 400 1 10−1 1 10 102 IC (mA) 200 10−1 103 1 TR1 (NPN) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR1 (NPN) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2005 Jan 11 5 10 102 IC (mA) 103 Base-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN MLD648 102 handbook, halfpage MLD644 1200 handbook, halfpage RCEsat 10 (3) (4) IC (mA) (Ω) (2) (1) (5) 800 (6) (1) (7) (2) (8) (3) 1 400 (9) (10) 10−1 10−1 1 10 102 IC (mA) 0 103 0 4 2 6 8 10 VCE (V) TR1 (NPN) Tamb = 25 °C. (1) (2) (3) (4) IB = 4.6 mA. IB = 4.14 mA. IB = 3.68 mA. IB = 3.22 mA. (5) IB = 2.76 mA. TR1 (NPN) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 Equivalent on-resistance as a function of collector current; typical values. 2005 Jan 11 Fig.7 6 (6) IB = 2.3 mA. (7) IB = 1.84 mA. (8) IB = 1.38 mA. (9) IB = 0.92 mA. (10) IB = 0.46 mA. Collector current as a function of collector-emitter voltage; typical values. NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN MLD649 600 MLD651 −1200 VBE handbook, halfpage handbook, halfpage hFE (mV) (1) −1000 (1) 400 −800 (2) (2) −600 200 (3) (3) −400 0 −10−1 −1 −10 −200 −10−1 −103 −102 IC (mA) TR2 (PNP) VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. −1 (3) Tamb = −55 °C. TR2 (PNP) VCE = −2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.8 Fig.9 DC current gain as a function of collector current; typical values. MLD653 −103 handbook, halfpage −10 −102 −103 IC (mA) Base-emitter voltage as a function of collector current; typical values. MLD652 −1200 handbook, halfpage VBEsat VCEsat (mV) (mV) −1000 (1) −102 (2) −800 (1) −600 (3) −10 (2) (3) −400 −1 −10−1 −1 −10 −102 IC (mA) −200 −10−1 −103 −1 −10 −102 −103 IC (mA) TR2 (PNP) IC/IB = 20. TR2 (PNP) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. 2005 Jan 11 7 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN MLD654 103 handbook, halfpage MLD650 −1200 handbook, halfpage RCEsat (Ω) (3) (4) IC (mA) (2) (1) 102 (5) −800 (6) (7) 10 (8) −400 1 (1) (2) 10−1 −10−1 (9) −1 −10 (10) (3) −102 0 −103 IC (mA) 0 −4 −2 −6 −8 −10 VCE (V) TR2 (PNP) Tamb = 25 °C. IB = −7 mA. IB = −6.3 mA. IB = −5.6 mA. IB = −4.9 mA. (5) IB = −4.2 mA. (1) (2) (3) (4) TR2 (PNP) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.12 Equivalent on-resistance as a function of collector current; typical values. 2005 Jan 11 (6) IB = −3.5 mA. (7) IB = −2.8 mA. (8) IB = −2.1 mA. (9) IB = −1.4 mA. (10) IB = −0.7 mA. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 8 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN PACKAGE OUTLINE Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA ISSUE DATE 04-11-08 06-03-16 SOT666 2005 Jan 11 EUROPEAN PROJECTION 9 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2005 Jan 11 10 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp11 Date of release: 2005 Jan 11 Document order number: 9397 750 14429