DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC847BVN NPN/PNP general purpose transistor Product data sheet Supersedes data of 2001 Aug 30 2001 Nov 07 NXP Semiconductors Product data sheet NPN/PNP general purpose transistor FEATURES BC847BVN PINNING • 300 mW total power dissipation PIN • Very small 1.6 mm x 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 • Excellent coplanarity due to straight leads 2, 5 base TR1; TR2 • Replaces two SC-75/SC-89 packaged transistors on same PCB area 6, 3 collector TR1; TR2 DESCRIPTION • Reduced required PCB area • Reduced pick and place costs. APPLICATIONS handbook, halfpage 6 5 4 6 • General purpose switching and amplification • Switch mode power supply complementary MOSFET driver 5 4 TR2 TR1 • Complementary driver for audio amplifiers. 1 DESCRIPTION 2 1 3 2 3 MAM443 Top view NPN/PNP transistor pair in a SOT666 plastic package. MARKING TYPE NUMBER MARKING CODE BC847BVN Fig.1 Simplified outline (SOT666) and symbol. 13 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 45 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C − 300 mW Tamb ≤ 25 °C; note 1 Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2001 Nov 07 2 NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC847BVN THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient notes 1 and 2 VALUE UNIT 416 K/W Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering is reflow soldering. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCB = 30 V; IE = 0 − − 15 nA VCB = 30 V; IE = 0; Tj = 150 °C − − 5 μA VEB = 5 V; IC = 0 − − 100 nA DC current gain VCE = 5 V; IC = 2 mA 200 − 450 collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − − 100 mV IC = 100 mA; IB = 5 mA; note 1 − − 300 mV VBEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 755 − mV fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − − MHz ICBO collector-base cut-off current IEBO emitter-base cut-off current hFE VCEsat NPN transistor VBE base-emitter turn-on voltage VCE = 5 V; IC = 2 mA 580 655 700 mV Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1MHz − − 1.5 pF Ce emitter capacitance VEB = 500 mV; IC = Ic = 0; f = 1MHz − 11 − pF PNP transistor VBE base-emitter turn-on voltage VCE = −5 V; IC = −2 mA 600 655 750 mV Cc collector capacitance VCB = −10 V; IC = Ic = 0; f = 1MHz − − 2.2 pF Ce emitter capacitance VEB = −500 mV; IE = Ie = 0; f = 1MHz − 10 − pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2001 Nov 07 3 NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC847BVN MLD703 600 MLD704 1200 handbook, halfpage handbook, halfpage VBE mV 1000 (1) hFE (1) 400 800 (2) (2) 600 (3) 200 (3) 0 10−1 1 400 10 102 IC (mA) 200 10−2 103 10−1 TR1 (NPN); VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR1 (NPN); VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current: typical values. MLD705 104 handbook, halfpage 10 1 102 103 IC (mA) Base-emitter voltage as a function of collector current; typical values. MLD706 1200 handbook, halfpage VBEsat VCEsat (mV) (mV) 1000 (1) 103 (2) 800 (3) 600 (1) 102 (2) 400 (3) 10 10−1 1 10 102 IC (mA) 200 10−1 103 1 TR1 (NPN); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR1 (NPN); IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current: typical values. 2001 Nov 07 4 10 102 IC (mA) Base-emitter saturation voltage as a function of collector current. 103 NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC847BVN MLD699 1000 MLD700 −1200 handbook, halfpage handbook, halfpage VBE hFE mV −1000 800 (1) 600 −800 (1) (2) −600 400 (2) 200 0 −10−2 (3) −400 (3) −10−1 −1 −10 −200 −10−2 −102 −103 IC (mA) −10−1 TR2 (PNP); VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR2 (PNP); VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.6 Fig.7 DC current gain as a function of collector current: typical values. MLD701 −104 handbook, halfpage −10 −1 −102 −103 IC (mA) Base-emitter voltage as a function of collector current; typical values. MLD702 −1200 VBEsat handbook, halfpage VCEsat (mV) (mV) −1000 (1) −103 (2) −800 −102 (3) −600 (1) (2) −400 (3) −10 −10−1 −1 −10 −102 IC (mA) −200 −10−1 −103 −1 TR2 (PNP); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR2 (PNP); IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.8 Fig.9 Collector-emitter saturation voltage as a function of collector current: typical values. 2001 Nov 07 5 −10 −102 −103 IC (mA) Base-emitter saturation voltage as a function of collector current. NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC847BVN PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-01-04 01-08-27 SOT666 2001 Nov 07 EUROPEAN PROJECTION 6 NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC847BVN DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2001 Nov 07 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp8 Date of release: 2001 Nov 07 Document order number: 9397 750 09039