DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMZ7 NPN/PNP general purpose transistors Product data sheet Supersedes data of 2001 Sep 25 2001 Nov 07 NXP Semiconductors Product data sheet NPN/PNP general purpose transistors FEATURES PEMZ7 PINNING • 300 mW total power dissipation PIN • Very small 1.6 × 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 • Self alignment during soldering due to straight leads 2, 5 base TR1; TR2 • Low collector capacitance 6, 3 collector TR1; TR2 handbook, halfpage 6 5 DESCRIPTION • Low VCEsat • High current capabilities • Improved thermal behaviour due to flat leads • Reduced required PCB area • Reduced pick and place costs. 4 6 5 4 APPLICATIONS TR2 • Heavy duty battery powered equipment (automotive, telecom and audio-video) such as motor and lamp drivers TR1 1 • VCEsat critical applications such as latest low supply voltage IC applications Top view 2 1 3 2 3 MAM456 • All battery driven equipment, to save battery power. DESCRIPTION Fig.1 Simplified outline (SOT666) and symbol. NPN/PNP low VCEsat transistor pair in a SOT666 plastic package. MARKING TYPE NUMBER PEMZ7 2001 Nov 07 MARKING CODE Z7 2 NXP Semiconductors Product data sheet NPN/PNP general purpose transistors PEMZ7 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 12 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 500 mA ICM peak collector current − 1 A IBM peak base current − 100 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C − 300 mW Tamb ≤ 25 °C; note 1 Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS notes 1 and 2 Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. 2001 Nov 07 3 VALUE UNIT 416 K/W NXP Semiconductors Product data sheet NPN/PNP general purpose transistors PEMZ7 CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCB = 15 V; IE = 0 − − 100 nA VCB = 15 V; IE = 0; Tj = 150 °C − − 50 μA VEB = 5 V; IC = 0 − − 100 nA DC current gain VCE = 2 V; IC = 10 mA 200 − − VCEsat collector-emitter saturation voltage IC = 200 mA; IB = 10 mA − − 220 mV fT transition frequency IC = 100 mA; VCE = 5 V; f = 100 MHz 250 420 − MHz 100 280 − MHz TR1 (NPN) − 4.4 6 pF TR2 (PNP) − − 10 pF ICBO collector-base cut-off current IEBO emitter-base cut-off current hFE TR1 (NPN) TR2 (PNP) Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz MHC014 600 MLD672 1200 handbook, halfpage handbook, halfpage hFE (1) (3) (4) IC 500 (2) (1) (mA) (5) 800 400 (6) (2) (7) 300 (8) 200 400 (3) (9) 100 (10) 0 10−1 1 10 102 0 103 0 4 2 6 IC (mA) 8 10 VCE (V) TR1 (NPN); Tamb = 25 °C. (1) IB = 4.60 mA TR1 (NPN); VCE = 2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.2 (2) IB = 4.14 mA (3) IB = 3.68 mA (4) IB = 3.22 mA DC current gain as a function of collector current; typical values. 2001 Nov 07 Fig.3 4 (5) (6) (7) (8) IB = 2.76 mA IB = 2.30 mA IB = 1.84 mA IB = 1.38 mA (9) IB = 0.92 mA (10) IB = 0.46 mA Collector current as a function of collector-emitter voltage; typical values. NXP Semiconductors Product data sheet NPN/PNP general purpose transistors MLD673 1200 VBE PEMZ7 MHC017 1200 handbook, halfpage handbook, halfpage VBEsat (mV) (mV) 1000 1000 (1) (1) 800 800 (2) (2) 600 600 (3) (3) 400 400 200 10−1 1 10 102 IC (mA) 200 10−1 103 1 10 103 IC (mA) TR1 (NPN); VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. TR1 (NPN); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 Base-emitter voltage as a function of collector current; typical values. MHC018 103 handbook, halfpage 102 Base-emitter saturation voltage as a function of collector current; typical values. MHC019 600 handbook, halfpage hFE VCEsat (mV) 500 102 (1) 400 300 (2) (1) 10 200 (2) (3) (3) 100 1 10−1 1 10 102 0 −10−1 103 IC (mA) −1 TR1 (NPN); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR2 (PNP); VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. 2001 Nov 07 5 −10 −102 −103 IC (mA) DC current gain as a function of collector current; typical values. NXP Semiconductors Product data sheet NPN/PNP general purpose transistors MLD650 −1200 PEMZ7 MLD667 −1200 VBE handbook, halfpage handbook, halfpage (3) (4) IC (mA) (2) (1) (mV) −1000 (5) −800 (1) (6) −800 (7) (2) (8) −600 −400 (9) (3) −400 (10) 0 −4 −2 0 −6 −8 TR2 (PNP); Tamb = 25 °C. (1) (2) (3) (4) (5) IB = 4.2 mA (6) IB = 3.5 mA (7) IB = 2.8 mA (8) IB = 2.1 mA IB = 7.0 mA IB = 6.3 mA IB = 5.6 mA IB = 4.9 mA Fig.8 −200 −10−1 −10 VCE (V) −10 −102 −103 IC (mA) TR2 (PNP); VCE = −2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. (9) IB = 1.4 mA (10) IB = 0.7 mA Collector current as a function of collector-emitter voltage; typical values. Fig.9 MHC022 −1200 −1 Base-emitter voltage as a function of collector current; typical values. MHC023 −103 handbook, halfpage handbook, halfpage VBEsat (mV) VCEsat (mV) −1000 −102 (1) −800 (1) (2) (3) (2) −600 −10 (3) −400 −200 −10−1 −1 −10 −102 IC (mA) −1 −10−1 −103 −1 −10 −102 −103 IC (mA) TR2 (PNP); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR2 (PNP); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. Fig.11 Collector-emitter saturation voltage as a function of collector current; typical values. 2001 Nov 07 6 NXP Semiconductors Product data sheet NPN/PNP general purpose transistors PEMZ7 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-01-04 01-08-27 SOT666 2001 Nov 07 EUROPEAN PROJECTION 7 NXP Semiconductors Product data sheet NPN/PNP general purpose transistors PEMZ7 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2001 Nov 07 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp9 Date of release: 2001 Nov 07 Document order number: 9397 750 09054