ADC0808S125/250 Single 8-bit ADC, up to 125 MHz or 250 MHz Rev. 03 — 24 February 2009 Product data sheet 1. General description The ADC0808S is a differential, high-speed, 8-bit Analog-to-Digital Converter (ADC) optimized for telecommunication transmission control systems and tape drive applications. It allows signal sampling frequencies up to 250 MHz. The ADC0808S clock inputs are selectable between 1.8 V Complementary Metal Oxide Semiconductor (CMOS) or Low-Voltage Differential Signals (LVDS). The data output signal levels are 1.8 V CMOS. All static digital inputs (CLKSEL, CCSSEL, CE_N, OTC, DEL0 and DEL1) are 1.8 V CMOS compatible. The ADC0808S offers the most flexible acquisition control system possible due to its programmable Complete Conversion Signal (CCS) which allows the delay time of the acquisition clock and acquisition clock frequency to be adjusted. The ADC0808S is supplied in an HTQFP48 package. 2. Features n n n n n n n n n n n n n n 8-bit resolution High-speed sampling rate up to 250 MHz Maximum analog input frequency up to 560 MHz Programmable acquisition output clock (complete conversion signal) Differential analog input Integrated voltage regulator or external control for analog input full-scale Integrated voltage regulator for input common-mode reference Selectable 1.8 V CMOS or LVDS clock input 1.8 V CMOS digital outputs 1.8 V CMOS compatible static digital inputs Binary or 2’s complement CMOS outputs Only 2 clock cycles latency Industrial temperature range from −40 °C to +85 °C HTQFP48 package 3. Applications n 2.5G and 3G cellular base infrastructure radio transceivers n Wireless access systems n Fixed telecommunications ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz n Optical networking n Wireless Local Area Network (WLAN) infrastructure n Tape drive applications 4. Ordering information Table 1. Ordering information Type number Sampling frequency Package (MHz) Name ADC0808S125HW/C1 125 ADC0808S250HW/C1 250 Description Version HTQFP48 plastic thermal enhanced thin quad flat package; SOT545-2 48 leads; body 7 × 7 × 1 mm; exposed die pad 5. Block diagram CLKSEL CLK+ CLK− 36 38 37 39 40 CLOCK DRIVER IN INN FSIN/ REFSEL 33 32 26 8 TRACK AND HOLD RESISTOR LADDERS ADC CORE LATCH INTERNAL REFERENCE LATCH CMADC REFERENCE 29 8 CCS CCSSEL D0 to D7 21 30 U/I 17 LATCH ADC0808S DEL0 DEL1 20 OTC IR OUTPUTS ENABLE 19 001aai267 CMADC Fig 1. Block diagram ADC0808S125_ADC0808S250_3 Product data sheet CE_N © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 2 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz 6. Pinning information 37 CLK+ 38 CLK− 39 DEL0 40 DEL1 41 D0 42 i.c. 43 VCCO4(1V8) 44 D1 45 i.c. 46 OGND4 47 D2 48 i.c. 6.1 Pinning OGND1 1 36 CLKSEL D3 2 35 i.c. i.c. 3 34 VCCA1(3V3) VCCO1(1V8) 4 33 IN D4 5 32 INN i.c. 6 OGND2 7 D5 8 29 CMADC i.c. 9 28 AGND1 31 AGND2 ADC0808S VCCO2(1V8) 10 30 FSIN/REFSEL 27 NC1V8 DGND D6 11 26 CCSSEL i.c. 12 Fig 2. n.c. 24 VCCD1(1V8) 23 DGND1 22 OTC 21 IR 20 CE_N 19 i.c. 18 CCS 17 OGND3 16 i.c. 15 D7 14 VCCO3(1V8) 13 25 n.c. 001aai268 Pin configuration 6.2 Pin description Table 2. Pin description Symbol Pin Type[1] Description OGND1 1 G data output ground 1 D3 2 O data output bit 3 i.c. 3 - internally connected; leave open VCCO1(1V8) 4 P data output supply voltage 1 (1.8 V) D4 5 O data output bit 4 i.c. 6 - internally connected; leave open OGND2 7 G data output ground 2 D5 8 O data output bit 5 i.c. 9 - internally connected; leave open VCCO2(1V8) 10 P data output supply voltage 2 (1.8 V) D6 11 O data output bit 6 i.c. 12 - internally connected; leave open VCCO3(1V8) 13 P data output supply voltage 3 (1.8 V) D7 14 O data output bit 7 ADC0808S125_ADC0808S250_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 3 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz Table 2. Pin description …continued Symbol Pin Type[1] Description i.c. 15 - internally connected; leave open OGND3 16 G data output ground 3 CCS 17 O complete conversion signal output i.c. 18 - internally connected; leave open CE_N 19 I(CMOS) chip enable input (active LOW) IR 20 O(CMOS) in-range output OTC 21 I(CMOS) control input for 2’s complement output DGND1 22 G digital ground 1 VCCD1(1V8) 23 P digital supply voltage 1 (1.8 V) n.c. 24 - not connected n.c. 25 - not connected CCSSEL 26 I(CMOS) control input for CCS frequency selection NC1V8 27 I not connected or connected to VCCD1(1V8) AGND1 28 G analog ground 1 CMADC 29 O regulator common-mode ADC output FSIN/REFSEL 30 I full-scale reference voltage input/internal or external reference selection AGND2 31 G analog ground 2 INN 32 I complementary analog input IN 33 I analog input VCCA1(3V3) 34 P analog supply voltage 1 (3.3 V) i.c. 35 - internally connected; leave open CLKSEL 36 I(CMOS) control input for clock input selection CLK+ 37 I clock input CLK− 38 I complementary clock input DEL0 39 I(CMOS) complete conversion signal delay input 0 DEL1 40 I(CMOS) complete conversion signal delay input 1 D0 41 O data output bit 0 i.c. 42 - internally connected; leave open VCCO4(1V8) 43 P data output supply voltage 4 (1.8 V) D1 44 O data output bit 1 i.c. 45 - internally connected; leave open OGND4 46 G data output ground 4 D2 47 O data output bit 2 i.c. 48 - internally connected; leave open DGND - G digital ground; exposed die pad [1] See Table 3. ADC0808S125_ADC0808S250_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 4 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz Table 3. Pin type description Type Description I input O output I(CMOS) 1.8 V CMOS level input O(CMOS) 1.8 V CMOS level output P power supply G ground 7. Functional description 7.1 CMOS/LVDS clock input The circuit has two clock inputs CLK+ and CLK−, with two modes of operation: • LVDS mode: CLK+ and CLK− inputs are at differential LVDS levels. An external resistor of between 80 Ω and 120 Ω is required; see Figure 3. maximum Vidth VO(dif) undefined state minimum Vidth RECEIVER LVDS DRIVER CLK+ CLK− Vgpd 001aah720 Fig 3. LVDS clock input • 1.8 V CMOS mode: CLK+ input is at 1.8 V CMOS level and sampling is done on the rising edge of the clock input signal. In this case pin CLK− must be grounded; see Figure 4. CMOS DRIVER CLK+ CLK− 001aai272 Fig 4. CMOS clock input ADC0808S125_ADC0808S250_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 5 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz Table 4. Clock input format selection Pin CLKSEL Clock input signal Pins CLK+ and CLK− HIGH or not connected LVDS LOW 1.8 V CMOS 7.2 Digital output coding The digital outputs are 1.8 V CMOS compatible. The data output format can be either binary or 2’s complement. Table 5. Output coding with differential inputs Vi(p-p) = 2.0 V; Vref(fs) = 1.25 V; typical values to AGND. Code Inputs (V) Output Outputs D7 to D0 Vi(IN) Vi(INN) Pin IR Binary 2’s complement Underflow < 0.45 > 1.45 LOW 0000 0000 1000 0000 0 0.45 1.45 HIGH 0000 0000 1000 0000 1 - - HIGH 0000 0001 1000 0001 : : : : : : 127 0.95 0.95 HIGH 0111 1111 1111 1111 : : : : : : 254 - - HIGH 1111 1110 0111 1110 255 1.45 0.45 HIGH 1111 1111 0111 1111 Overflow > 1.45 < 0.45 LOW 1111 1111 0111 1111 The in-range CMOS output pin IR will be HIGH during normal operation. When the ADC input reaches either positive or negative full-scale, the IR output will be LOW. Selection between output coding is controlled by pins OTC and CE_N. Table 6. Output format selection 2’s complement outputs Chip enable Output data Pin OTC Pin CE_N Pins D0 to D7, CCS and IR LOW LOW active; binary HIGH LOW active; 2’s complement X [1] HIGH high-impedance [1] X = don’t care. ADC0808S125_ADC0808S250_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 6 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz 7.3 Timing output sample n sample n+1 sample n+2 sample n+3 sample n+4 IN, INN td(s) n CLK+, CLK− 50 % td(o) data n−2 D0 to D7 data n−1 data n th(o) Fig 5. data n+1 001aab892 Output timing diagram (CCS not selected) 7.4 Timing complete conversion signal The ADC0808S generates an adjustable clock output signal on pin CCS called Complete Conversion Signal, which can be used to control the acquisition of converted output data to the digital circuit connected to the ADC0808S output data bus. Two logic input pins DEL0 and DEL1 control the delay of the edge of the CCS signal to achieve an optimal position in the stable, usable zone of the data as shown in Figure 6. Table 7. Complete conversion signal selection Pin DEL0 Pin DEL1 Pin CCS LOW LOW high-impedance HIGH LOW active; see Table 13 LOW HIGH HIGH HIGH Pin CCSSEL selects the CCS frequency; see Table 8. Table 8. Complete conversion signal frequency selection Pin CCSSEL CCS frequency (fCCS) HIGH or not connected fclk LOW fclk / 2 ADC0808S125_ADC0808S250_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 7 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz data n−2 D0 to D7 data n−1 data n data n+1 td(CCS) CCS (fclk) 50 % CCS (fclk / 2) 50 % 001aab893 Fig 6. Complete conversion signal timing diagram using CCS 7.5 Full-scale input selection The ADC0808S has an internal reference circuit which can be overruled by an external reference voltage. This can be done with the full-scale reference voltage (Vref(fs)) according to Table 9. The ADC provides the required common-mode voltage on pin CMADC. In case of internal regulation, the regulator output voltage on pin CMADC is 0.95 V. Table 9. Full-scale input selection Full-scale reference voltage Vref(fs) Common-mode output voltage VO(cm) Maximum peak-to-peak input voltage Vi(p-p)(max) 1.15 V 0.8 V 1.825 V 1.20 V 0.86 V 1.91 V 1.25 V 0.94 V 1.99 V 1.30 V 1.01 V 2.08 V 1.35 V 1.09 V 2.16 V The internal reference circuit is enabled by connecting pin FSIN to ground. The common-mode output voltage VO(cm) on pin CMADC will then be 0.95 V, and the maximum peak-to-peak input voltage Vi(p-p)(max) will be 2.0 V; see Figure 7 and Figure 8. The ADC full-scale input selection principle is shown in Figure 9. ADC0808S125_ADC0808S250_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 8 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz 001aai270 1.1 VO(cm) (V) 1.0 0.9 0.8 0.7 0 1.1 1.2 1.3 1.4 VFSIN (V) Fig 7. ADC common-mode output voltage VO(cm) as a function of VFSIN 001aai269 2.2 Vi(p-p)(max) (V) 2.1 2.0 1.9 1.8 1.0 1.1 1.2 1.3 1.4 VFSIN (V) Fig 8. ADC maximum peak-to-peak input voltage Vi(p-p)(max) as a function of VFSIN IN analog input INN FSIN/REFSEL CMADC IN analog input INN 1.15 V to 1.35 V 0.8 V to 1.1 V FSIN/REFSEL CMADC 0.95 V 001aai273 a. External reference voltage applied b. Internal reference circuit enabled Fig 9. ADC full-scale input selection ADC0808S125_ADC0808S250_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 9 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz 8. Limiting values Table 10. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VCCA Conditions Min Max Unit analog supply voltage −0.5 +4.6 V VCCD digital supply voltage −0.5 +2.5 V VCCO output supply voltage −0.5 +2.5 V Vi(IN) input voltage on pin IN referenced to AGND −0.5 VCCA + 1 V Vi(INN) input voltage on pin INN referenced to AGND −0.5 VCCA + 1 V Vi(CLK) input voltage on pin CLK referenced to DGND −0.5 VCCD + 0.55 V Tstg storage temperature −55 +150 °C Tamb ambient temperature −40 +85 °C Tj junction temperature - 150 °C 9. Thermal characteristics Table 11. Thermal characteristics Symbol Parameter Typ Unit Rth(j-a) thermal resistance from junction to ambient [1] 36.2 K/W thermal resistance from junction to case [1] 14.3 K/W Rth(j-c) [1] Conditions In compliance with JEDEC test board, in free air. 10. Static characteristics Table 12. Static characteristics VCCA = 3.0 V to 3.6 V; VCCD = 1.65 V to 1.95 V; VCCO = 1.65 V to 1.95 V; pins AGND1, AGND2 and DGND1 shorted together; Tamb = −40 °C to +85 °C; Vi(IN) − Vi(INN) = 2.0 V − 0.5 dB; VI(cm) = 0.95 V; VFSIN = 0 V; typical values are measured at VCCA = 3.3 V, VCCD = VCCO = 1.8 V, Tamb = 25 °C and CL = 10 pF; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Supplies VCCA analog supply voltage 3.0 3.3 3.6 V VCCD digital supply voltage 1.65 1.80 1.95 V VCCO output supply voltage 1.65 1.80 1.95 V ICCA analog supply current fclk = 125 MHz; fi = 1.25 MHz - 60 - mA ICCD digital supply current fclk = 125 MHz; fi = 1.25 MHz - 12 - mA ICCO output supply current fclk = 125 MHz; fi = 1.25 MHz - 11 - mA Ptot total power dissipation fclk = 125 MHz; fi = 1.25 MHz - 240 - mW Clock inputs: pins CLK+ and CLK− Ri Ci input resistance [1] - 10 - kΩ input capacitance [1] - 1 - pF [2] 825 - 1575 mV LVDS clock input; see Figure 3 ∆VI input voltage range VI on pin CLK+ or CLK−; |Vgpd| < 50 mV ADC0808S125_ADC0808S250_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 10 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz Table 12. Static characteristics …continued VCCA = 3.0 V to 3.6 V; VCCD = 1.65 V to 1.95 V; VCCO = 1.65 V to 1.95 V; pins AGND1, AGND2 and DGND1 shorted together; Tamb = −40 °C to +85 °C; Vi(IN) − Vi(INN) = 2.0 V − 0.5 dB; VI(cm) = 0.95 V; VFSIN = 0 V; typical values are measured at VCCA = 3.3 V, VCCD = VCCO = 1.8 V, Tamb = 25 °C and CL = 10 pF; unless otherwise specified. Symbol Parameter Conditions Vidth input differential threshold voltage |Vgpd| < 50 mV II input current [2] 825 mV < VI < 1575 mV Min Typ Max Unit −100 - +100 mV - - 50 µA DGND - 0.2VCCD V 1.8 V CMOS clock input; see Figure 4 VIL LOW-level input voltage VIH HIGH-level input voltage 0.8VCCD - VCCD V IIL LOW-level input current VIL = 0.2VCCD - - 50 µA IIH HIGH-level input current VIH = 0.8VCCD - - 50 µA Analog inputs: pins IN and INN Ri input resistance [1] - 1.0 - MΩ Ci input capacitance [1] - 1.0 - pF VI(cm) common-mode input voltage 0.7 0.95 1.0 V Vi(IN) = Vi(INN); output code = 127 Digital input pins: OTC, CE_N, DEL0, DEL1, CLKSEL and CCSSEL VIL LOW-level input voltage DGND - 0.2VCCD V VIH HIGH-level input voltage 0.8VCCD - VCCD V IIL LOW-level input current VIL = 0.3VCCD - - 50 µA IIH HIGH-level input current VIH = 0.7VCCD - - 50 µA 0.85 0.95 1.1 V internal reference - 0 0.6 V external reference 1.15 1.25 1.35 V - 12 - µA 1.92 2 2.03 V VFSIN = 1.15 V 1.80 1.825 1.85 V VFSIN = 1.25 V 1.98 1.99 2.03 V VFSIN = 1.35 V 2.11 2.16 2.18 V - 0.2 V VCCO V Voltage controlled regulator output: pin CMADC VO(cm) common-mode output voltage Reference voltage input: pin VFSIN Ii(FSIN) FSIN[3] voltage on pin FSIN input current on pin FSIN Vi(p-p)(max) maximum peak-to-peak input voltage internal reference external reference Digital outputs: pins D0 to D7, CCS and IR VOL LOW-level output voltage OGND VOH HIGH-level output voltage VCCO − 0.2 - [1] Guaranteed by design. [2] |Vgpd| is the voltage of ground potential difference across or between boards. [3] The ADC input range can be adjusted with an external reference voltage applied to pin FSIN. This voltage must be referenced to AGND. ADC0808S125_ADC0808S250_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 11 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz 11. Dynamic characteristics Table 13. Dynamic characteristics VCCA = 3.0 V to 3.6 V; VCCD = 1.65 V to 1.95 V; VCCO = 1.65 V to 1.95 V; pins AGND1, AGND2 and DGND1 shorted together; Tamb = −40 °C to +85 °C; Vi(IN) − Vi(INN) = 2.0 V − 0.5 dB; VI(cm) = 0.95 V; VFSIN = 0 V; typical values are measured at VCCA = 3.3 V, VCCD = VCCO = 1.8 V, Tamb = 25 °C and CL = 10 pF; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Clock timing input: pins CLK+ and CLK− fclk(min) minimum clock frequency - - 1 MHz fclk(max) maximum clock frequency 250 - - MHz tw(clk) clock pulse width 1.8 - - ns 1.8 V CMOS clock - 1.3 - ns LVDS clock - 1.65 - ns fclk = 125 MHz Timing output: pins D0 to D7 and IR[1]; see Figure 5 td(s) th(o) td(o) sampling delay time output hold time output delay time 1.8 V CMOS clock 3.3 4.4 - ns LVDS clock 4.2 4.8 - ns 1.8 V CMOS clock - 5.4 6.9 ns LVDS clock - 5.8 7.3 ns 125 - - MHz DEL0 = HIGH; DEL1 = LOW - 0.3 - ns DEL0 = LOW; DEL1 = HIGH - 0.8 - ns DEL0 = HIGH; DEL1 = HIGH - 1.9 - ns Timing complete conversion signal: pin CCS; see Figure 6 fCCS(max) maximum CCS frequency td(CCS) CCS delay time 3-state output delay time: pins CCS, IR and D7 to D0 tdZH float to active HIGH delay time - 2.1 - ns tdZL float to active LOW delay time - 2.2 - ns tdHZ active HIGH to float delay time - 3.3 - ns tdLZ active LOW to float delay time - 2.9 - ns Analog signal processing (50 % clock duty factor); see Section 12 INL integral non-linearity fclk = 20 MHz; fi = 21.4 MHz - ±0.82 - LSB DNL differential non-linearity fclk = 20 MHz; fi = 21.4 MHz; no missing code guaranteed - ±0.4 - LSB EO offset error VCCA = 3.3 V; VCCD = 1.8 V; Tamb = 25 °C; output code = 127 - 2.5 - mV EG gain error spread from device to device; VCCA = 3.3 V; VCCD = 1.8 V; Tamb = 25 °C - 1.85 - % B bandwidth fclk = 125 MHz; −3 dB; full-scale input [2] - 560 - MHz THD total harmonic distortion fclk = 125 MHz; fi = 78 MHz [3] - −53 - dB - −53 - dB - 0.5 - LSB - 48 - dBc - 47 - dBc fclk = 250 MHz; fi = 125 MHz Nth(RMS) S/N RMS thermal noise signal-to-noise ratio shorted input; fclk = 125 MHz fclk = 125 MHz; fi = 78 MHz fclk = 250 MHz; fi = 125 MHz ADC0808S125_ADC0808S250_3 Product data sheet [4] © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 12 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz Table 13. Dynamic characteristics …continued VCCA = 3.0 V to 3.6 V; VCCD = 1.65 V to 1.95 V; VCCO = 1.65 V to 1.95 V; pins AGND1, AGND2 and DGND1 shorted together; Tamb = −40 °C to +85 °C; Vi(IN) − Vi(INN) = 2.0 V − 0.5 dB; VI(cm) = 0.95 V; VFSIN = 0 V; typical values are measured at VCCA = 3.3 V, VCCD = VCCO = 1.8 V, Tamb = 25 °C and CL = 10 pF; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit SFDR spurious free dynamic range fclk = 125 MHz; fi = 78 MHz - 55 - dBc fclk = 250 MHz; fi = 125 MHz - 55 - dBc - −55 - dB - −60 - dB IMD2 second-order intermodulation distortion f1 = 124 MHz; f2 = 126 MHz; fclk = 250 MHz [5] IMD3 third-order intermodulation distortion f1 = 124 MHz; f2 = 126 MHz; fclk = 250 MHz [5] [1] Output data acquisition: the output data is available after the maximum delay of td(o). [2] The −3 dB analog bandwidth is determined by the 3 dB reduction in the reconstructed output, the input being a full-scale sine wave. [3] The total harmonic distortion is obtained with the addition of the first five harmonics. [4] The signal-to-noise ratio takes into account all harmonics above five and noise up to Nyquist frequency. [5] Intermodulation measured relative to either tone with analog input frequencies f1 and f2. The two input signals have the same amplitude and the total amplitude of both signals provides full-scale to the converter (−6 dB below full-scale for each input signal). IMD3 is the ratio of the RMS value of either input tone to the RMS value of the worst case third-order intermodulation product. 12. Definitions 12.1 Static parameters 12.1.1 Integral non-linearity Integral non-linearity (INL) is defined as the deviation of the transfer function from a best-fit straight line (linear regression computation). The INL of the code is obtained from the equation: V in ( i ) – V in ( ideal ) INL ( i ) = ----------------------------------------------S (1) where: S corresponds to the slope of the ideal straight line (code width), i corresponds to the code value, Vin is the input voltage. 12.1.2 Differential non-linearity Differential non-linearity (DNL) is the deviation in code width from the value of 1 LSB. V in ( i + 1 ) – V in ( i ) DNL ( i ) = -------------------------------------------S (2) where: Vin is the input voltage; i is a code value from 0 to (2n − 2). 12.2 Dynamic parameters Figure 10 shows the spectrum of a single tone full-scale input sine wave of frequency ft, conforming to coherent sampling and which is digitized by the ADC under test. Coherent sampling: (ft / fs = M / N, where M = number of cycles and N = number of samples, M and N values being relatively prime). ADC0808S125_ADC0808S250_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 13 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz magnitude a1 SFDR s a2 a3 ak frequency 001aag627 a = harmonic. s = single tone. Fig 10. Single tone spectrum of full-scale input sine wave of frequency ft Remark: Pnoise in the equations in the following sections, is the sum of noise sources which include random noise, non-linearities, sampling time errors, and quantization noise. 12.2.1 Signal-to-Noise And Distortion (SINAD) SINAD is the ratio of the output signal power to the noise plus distortion power for a given sample rate and input frequency, excluding the DC component: P signal SINAD [ dB ] = 10log 10 ---------------------------------------- P noise + distortion (3) 12.2.2 Effective Number Of Bits (ENOB) ENOB is derived from SINAD and gives the theoretical resolution required by an ideal ADC to obtain the same SINAD measured on the real ADC. A good approximation gives: SINAD – 1.76 ENOB = ---------------------------------6.02 (4) 12.2.3 Total Harmonic Distortion (THD) THD is the ratio of the power of the harmonics to the power of the fundamental. For k − 1 harmonics the THD is: P harmonics THD [ dB ] = 10log 10 ------------------------- P signal (5) where: ADC0808S125_ADC0808S250_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 14 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz 2 2 2 P harmonics = a 2 + a 3 + … + a k (6) 2 (7) P signal = a 1 The value of k is usually 6 (THD is calculated based on the first 5 harmonics). 12.2.4 Signal-to-Noise ratio (S/N) S/N is the ratio of the output signal power to the noise power, excluding the harmonics and the DC component: P signal S ⁄ N = 10log 10 ---------------- P noise (8) 12.2.5 Spurious Free Dynamic Range (SFDR) The SFDR value specifies the available signal range as the spectral distance between the amplitude of the fundamental (a1) and the amplitude of the largest spurious harmonic and non-harmonic (max (s)), excluding the DC component: a1 SFDR [ dB ] = 20log 10 ------------------ max ( s ) (9) 12.2.6 InterModulation Distortion (IMD) magnitude f2 2f2 − f1 f1 − f2 f1 2f1 − f2 f1 + 2f2 f1 + f2 2f2 2f1 2f1 + f2 3f2 3f1 frequency 001aag628 Fig 11. Spectrum of dual tone input sine wave of frequencies f1 and f2 The second-order and third-order intermodulation distortion products IMD2 and IMD3 are defined using a dual tone input sinusoid, where f1 and f2 are chosen according to the coherence criterion. IMD is the ratio of the RMS value of either tone to the RMS value of the worst, second or third-order intermodulation products. ADC0808S125_ADC0808S250_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 15 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz The total intermodulation distortion is given by: P intermod IMD [ dB ] = 10log 10 ---------------------- P signal (10) where: 2 P intermod = a im ( f 1 – f 2) 2 – a im ( f 2 … + a im ( 2 f 2 where a im ( f n) 2 1 + f 2) 1 – f 2) 2 + a im ( f 2 1 + a im ( 2 f – 2 f 2) + 2 f 2) +… (11) 1 + f 2) 2 (12) 2 ADC0808S125_ADC0808S250_3 Product data sheet 1 is the power in the intermodulation component at fn. P signal = a f + a f 1 2 + a im ( f © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 16 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz 13. Package outline HTQFP48: plastic thermal enhanced thin quad flat package; 48 leads; body 7 x 7 x 1 mm; exposed die pad SOT545-2 c y exposed die pad side X Dh 36 25 A 24 37 ZE e E HE Eh (A 3) A A2 A1 w M θ bp Lp L pin 1 index 13 48 detail X 1 12 ZD w M bp v M A e D B HD v M B 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) A UNIT max. mm 1.2 A1 A2 A3 bp c D(1) Dh E(1) Eh e HD HE L Lp v w y 0.15 0.05 1.05 0.95 0.25 0.27 0.17 0.20 0.09 7.1 6.9 4.6 4.4 7.1 6.9 4.6 4.4 0.5 9.1 8.9 9.1 8.9 1 0.75 0.45 0.2 0.08 0.08 ZD(1) ZE(1) 0.9 0.6 0.9 0.6 θ 7° 0° Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT545-2 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-04-07 04-01-29 MS-026 Fig 12. Package outline SOT545-2 (HTQFP48) ADC0808S125_ADC0808S250_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 17 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz 14. Soldering of SMD packages This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description”. 14.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both the mechanical and the electrical connection. There is no single soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 14.2 Wave and reflow soldering Wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. The wave soldering process is suitable for the following: • Through-hole components • Leaded or leadless SMDs, which are glued to the surface of the printed circuit board Not all SMDs can be wave soldered. Packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. Also, leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. The reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. Leaded packages, packages with solder balls, and leadless packages are all reflow solderable. Key characteristics in both wave and reflow soldering are: • • • • • • Board specifications, including the board finish, solder masks and vias Package footprints, including solder thieves and orientation The moisture sensitivity level of the packages Package placement Inspection and repair Lead-free soldering versus SnPb soldering 14.3 Wave soldering Key characteristics in wave soldering are: • Process issues, such as application of adhesive and flux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave • Solder bath specifications, including temperature and impurities ADC0808S125_ADC0808S250_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 18 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz 14.4 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see Figure 13) than a SnPb process, thus reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board • Reflow temperature profile; this profile includes preheat, reflow (in which the board is heated to the peak temperature) and cooling down. It is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). In addition, the peak temperature must be low enough that the packages and/or boards are not damaged. The peak temperature of the package depends on package thickness and volume and is classified in accordance with Table 14 and 15 Table 14. SnPb eutectic process (from J-STD-020C) Package thickness (mm) Package reflow temperature (°C) Volume (mm3) < 350 ≥ 350 < 2.5 235 220 ≥ 2.5 220 220 Table 15. Lead-free process (from J-STD-020C) Package thickness (mm) Package reflow temperature (°C) Volume (mm3) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245 Moisture sensitivity precautions, as indicated on the packing, must be respected at all times. Studies have shown that small packages reach higher temperatures during reflow soldering, see Figure 13. ADC0808S125_ADC0808S250_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 19 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz temperature maximum peak temperature = MSL limit, damage level minimum peak temperature = minimum soldering temperature peak temperature time 001aac844 MSL: Moisture Sensitivity Level Fig 13. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description”. ADC0808S125_ADC0808S250_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 20 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz 15. Revision history Table 16. Revision history Document ID Release date Data sheet status Change notice Supersedes ADC0808S125_ADC0808S250_3 20090224 Product data sheet - ADC0808S125_ ADC0808S250_2 Modifications: • Table 13 updated. ADC0808S125_ADC0808S250_2 20081007 Product data sheet - TDA9917_1 TDA9917_1 20060609 Objective data sheet - - ADC0808S125_ADC0808S250_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 21 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 16.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] ADC0808S125_ADC0808S250_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 24 February 2009 22 of 23 ADC0808S125/250 NXP Semiconductors Single 8-bit ADC, up to 125 MHz or 250 MHz 18. Contents 1 2 3 4 5 6 6.1 6.2 7 7.1 7.2 7.3 7.4 7.5 8 9 10 11 12 12.1 12.1.1 12.1.2 12.2 12.2.1 12.2.2 12.2.3 12.2.4 12.2.5 12.2.6 13 14 14.1 14.2 14.3 14.4 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 5 CMOS/LVDS clock input . . . . . . . . . . . . . . . . . . 5 Digital output coding . . . . . . . . . . . . . . . . . . . . . 6 Timing output . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Timing complete conversion signal. . . . . . . . . . 7 Full-scale input selection . . . . . . . . . . . . . . . . . 8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal characteristics. . . . . . . . . . . . . . . . . . 10 Static characteristics. . . . . . . . . . . . . . . . . . . . 10 Dynamic characteristics . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Static parameters . . . . . . . . . . . . . . . . . . . . . . 13 Integral non-linearity . . . . . . . . . . . . . . . . . . . . 13 Differential non-linearity . . . . . . . . . . . . . . . . . 13 Dynamic parameters. . . . . . . . . . . . . . . . . . . . 13 Signal-to-Noise And Distortion (SINAD) . . . . . 14 Effective Number Of Bits (ENOB) . . . . . . . . . . 14 Total Harmonic Distortion (THD). . . . . . . . . . . 14 Signal-to-Noise ratio (S/N) . . . . . . . . . . . . . . . 15 Spurious Free Dynamic Range (SFDR) . . . . . 15 InterModulation Distortion (IMD). . . . . . . . . . . 15 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17 Soldering of SMD packages . . . . . . . . . . . . . . 18 Introduction to soldering . . . . . . . . . . . . . . . . . 18 Wave and reflow soldering . . . . . . . . . . . . . . . 18 Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 18 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 21 Legal information. . . . . . . . . . . . . . . . . . . . . . . 22 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 22 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Contact information. . . . . . . . . . . . . . . . . . . . . 22 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 24 February 2009 Document identifier: ADC0808S125_ADC0808S250_3