INFINEON BGF200

Data Sheet, V2.1, Oct. 2006
BGF200
Microphone Filter and ESD Protection
Small Signal Discretes
Edition 2006-10-17
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
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BGF200
BGF200
Revision History: 2006-10-17, V2.1
Previous Version: 2006-03-16
Page
Subjects (major changes since last revision)
All
Layout conformation
Data Sheet
3
V2.1, 2006-10-17
BGF200
Microphone Filter and ESD Protection
Microphone Filter and ESD Protection
Feature
• Microphone filter
• Integrated ESD protection up to 15 kV
• Low input impedance
• More than 30 dB stopband attenuation
• Ideal for GSM/UMTS
• Wafer Level Package with SnAgCu-Bumps
WLP-8-1,- 2, -4
A3
B1
C3
C1
B2 B3 C2
A2
BGF200_Blockdiagram.vsd
Figure 1
Blockdiagram
Description
The BGF200 is a microphone filter with low pass characteristic offering a very high stop band attenuation up to 6
GHz. All pins are protected against ESD. The wafer level package is a green package with a size of only 1.6 mm
x 1.6 mm and a total height of 0.65 mm.
Type
Package
Marking
Chip
BGF200
WLP-8-4
GF200
N0703
Table 1
Maximum Ratings
Parameter
Symbol
Values
Min.
Voltage at pin A2 to GND
Voltage at all other pins to GND
Operating temperature range
Storage temperature range
Summed up input power for all pins
VA2
VP
TOP
TSTG
PIN
Typ.
Unit
Max.
0
4.0
V
-14
14
V
-40
+85
°C
-65
+150
°C
25
mW
-15
15
kV
-2
2
kV
Note /
Test Condition
TA < 70 °C
1)
Electrostatic Discharge According to IEC61000-4-2
Between pins C3 and B3
Between all other pins
VE
VI
1) Contact discharge
Data Sheet
4
V2.1, 2006-10-17
BGF200
Microphone Filter and ESD Protection
Table 2
Electrical Characteristics1)
Parameter
Symbol
Resistors R1, R2, R4
R1,2,4
R3,5
C1,2,3,4
C5
I
Resistor R3, R5
Capacitances C1,C2,C3,C4
Capacitances C5
Substrate leakage currents
all pins to GND
Values
Unit
Min.
Typ.
Max.
2090
2200
2310
Ω
47.5
50
52.5
Ω
800
1000
1350
pF
120
150
200
pF
100
nA
Note /
Test Condition
VR = 3 V
Insertion loss2)
IL
30
dB
F = 0.1... 6 GHz,
pins C3 to B1, C1
ZS = ZL = 50 Ω
1) at TA = 25 °C
2)Insertion loss (see also Figure 3) strongly depends upon source and load impedance. For RF test purposes a
50 Ω environment is used.
B3, GND1
A3
C3
1n0
C3
R3
50R
R1
2k2
C2
1n0
C1
1n0
B2, GND2
A2
C2, GND3
R2
2k2
R5
50R
B1
C5
150p
C4
1n0
C1
R4
2k2
BGF200_Schematic.vsd
Figure 2
Data Sheet
Schematic
5
V2.1, 2006-10-17
BGF200
Microphone Filter and ESD Protection
Transmission Gain |S21|2 = f(f)
−20
2
|S
|
C3B1
−30
2
|SC3C1|
−40
2
|S21| [dB]
−50
−60
−70
−80
−90
−100
2
10
4
6
10
8
10
10
10
10
Frequency [Hz]
Transmission C3 - B1, C3 - C1
1.6 ±0.05
8x
C OPLAN AR ITY
A
C3
B3
A3
C2
B2
A2
C1
B1
SEATING PLANE
3)
1.6 ±0.05
0.08 C
C orner Index Area2)
0.5
0.1 C
0.5
0.25 ±0.05
STAN D OFF
C
B
2 x 0.5 = 1
0.65 ±0.05
2 x 0.5 = 1
Figure 3
0.5
8x
ø0.05 M A B
0.3 ±0.051)
1) D imension is measured at the maximum ball diameter, parallel to primary datum C
2) Identified by marking
3) Primary datum C and seating plane are defined by the domed crowns of the balls
Figure 4
Package Outline WLP-8-4
Corner
Index Area 1)
1.75 ±0.1
1) Balls face down
Figure 5
Data Sheet
8 ±0.1
0.25 ±0.1
1.75 ±0.1
4 ±0.1
1.15 ±0.15
CWLG9627
Tape for WLP-8-4
6
V2.1, 2006-10-17