INFINEON BGF128

Data Sheet, V2.1, April 2009
BGF128
HDMI Interface ESD Protection
RF & Protection Devices
Edition 2009-04-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2009.
All Rights Reserved.
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BGF128
HDMI Interface ESD Protection
BGF128
Revision History: 2009-04-01, V2.1
Previous Version: 2009-03-02, V2.0
Page
Subjects (major changes since last revision)
4
Marking updated
6
Figure 3 added
Data Sheet
3
V2.1, 2009-04-01
BGF128
HDMI Interface ESD Protection
BGF128
BGF128
Features
• ESD protection circuit for control data lines of an HDMI interface
• ESD protection according to IEC61000-4-2 for ±15 kV contact discharge on
external IOs
• Wafer level package with SnAgCu solder balls
• 400 µm solder ball pitch
• RoHS and WEEE compliant package
WLP-8-9-N-3D
Description
BGF128 is an ESD protection circuit for control data lines of an HDMI interface. All external IOs are protected
against ESD pulses of ±15 kV contact discharge according to IEC61000-4-2. The wafer level package is a green
lead-free and halogen-free package with a size of only 1.15 mm x 1.15 mm and a total height of 0.6 mm.
A2
A1
A3
R1, 1750 Ω
B3
R2, 1750 Ω
C1
C3
R3, 100 kΩ
B2 (GND)
C2 (GND)
BGF 128_schematic .vsd
Figure 1
Schematic
Type
Package
Marking
Chip
BGF128
WLP-8-9
28
N0747
Table 1
Maximum Ratings
Parameter
Symbol
Values
Min.
Voltage at all pins to GND
Operating temperature range
Storage temperature range
Summed up input power for all pins
VP
TOP
TSTG
Pin
Typ.
Unit
Note /
Test Condition
Max.
0
–
5
V
–
-40
–
+85
°C
–
-65
–
+150
°C
–
–
–
60
mW
TS < 70 °C
-2
–
2
kV
–
-15
–
15
kV
–
Electrostatic Discharge According to IEC61000-4-2
Contact discharge at internal pin C1 to any
other pin
VESD
Contact discharge at external pins A1, A2, A3, VESD
B3, C3 to GND
Data Sheet
4
V2.1, 2009-04-01
BGF128
HDMI Interface ESD Protection
BGF128
Electrical Characteristics1)
Table 2
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
1575
1750
1925
Ω
–
80
100
120
kΩ
–
Leakage current of ESD protection diodes
R1,2
R3
IR
–
–
1
2
100
200
nA
nA
Breakdown voltage of ESD diodes2)
V(BR)
–
18.5
-12.5
–
V
V=3V
V=5V
I(BR) = 1 mA
I(BR) = -1 mA
Line capacitance
A1, A2, A3, B3, C33)
1) at TA = 25 °C
CT
8
10
12
pF
Resistors R1, R2
Resistor R3
V=0V
2) after snap-back
3) Capacitance measured from designated pin to GND. Pin C1 connected to GND.
Package Outlines
Solder balls face up
0.6 ±0.05
B
0.4
C
(0.175 ±0.05)
C1
0.4
2 x 0.4 = 0.8
(0.175 ±0.05)
A1
C2
C3
B2
B3
A2
A3
2 x 0.4 = 0.8
8x
0.08 C
8x
COPLANARITY
ø0.05 M A B
0.25 ±0.04 1)
A
1.15 ±0.05
0.1 C
(0.175 ±0.05)
Pin 1
Corner Index Area 2)
SEATING PLANE 3)
0.2 ±0.05
STANDOFF
1.15 ±0.05
(0.175 ±0.05)
Solder balls face down
1) Dimension is measured at the maximum solder ball diameter, parallel to primary datum C
2) A1 corner identified by marking
3) Primary datum C and seating plane are defined by the domed crowns of the balls
WLP-8-9-N-PO V01
Figure 2
Data Sheet
Package WLP-8-9
5
V2.1, 2009-04-01
BGF128
HDMI Interface ESD Protection
BGF128
Footprint
0.8
0.8
0.4
0.4
0.25
WLP-8-9-N-FP V01
Figure 3
Recommended PCB pad design for reflow soldering
Tape
0.25
Pin 1
Corner Index Area
Figure 4
1.33
8
1.33
4
0.75
WLP-8-9-N-TP V01
Tape for WLP-8-9
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Data Sheet
6
V2.1, 2009-04-01