INFINEON BGB707L7ESD

BGB707L7ESD
SiGe:C Wideband MMIC LNA with Integrated ESD Protection
Data Sheet
Revision 3.2, 2010-06-30
RF & Protection Devices
Edition 2010-06-30
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGB707L7ESD
BGB707L7ESD SiGe:C Wideband MMIC LNA with Integrated ESD Protection
Revision History: 2010-06-30, Revision 3.2
Previous Revision: Revision 3.1
Page
Subjects (major changes since last revision)
New template for data sheet layout.
18 - 26
Linearity description related to the RF output.
13, 14
Typical DC characteristic curves included.
27, 30
Typical AC characteristic curves included.
21, 24
AC performance tables expanded by 2 frequencies.
Trademarks of Infineon Technologies AG
BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™,
CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™,
EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™,
PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SensoNor™, SIEGET™, SINDRION™,
SMARTi™, SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™,
XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™,
REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership.
Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation
Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation.
FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of
Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP.
MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2010-03-22
Data Sheet
3
Revision 3.2, 2010-06-30
BGB707L7ESD
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Operation Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
6.1
6.2
6.3
6.3.1
6.3.1.1
6.3.1.2
6.3.2
6.3.3
6.3.4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical DC Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AC Characteristics in FM Radio Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High-Ohmic FM Radio Antenna . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50 Ω FM Radio Antenna . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AC Characteristics in the SDMB Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AC Characteristics in Test Fixture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical AC Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Data Sheet
4
12
12
13
15
15
15
15
16
17
27
Revision 3.2, 2010-06-30
BGB707L7ESD
List of Figures
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Figure 14
Figure 15
Figure 16
Figure 17
Figure 18
Figure 19
Figure 20
Data Sheet
Pinning PG-TSLP-7-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Function Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
ICC as a Function of Rext , VCC as Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
ICC as a Function of VCC , VCtrl = 3 V , Rext as Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
ICC as a Function of VCtrl , VCC = 3 V , Rext as Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
ICC as a Function of Temperature , VCtrl = VCC = 3 V , Rext = open . . . . . . . . . . . . . . . . . . . . . . . . . 14
Testing Circuit for Frequencies from 150 MHz to 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
S11 as a Function of Frequency, IC as Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
S22 as a Function of Frequency, IC as Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Transition Frequency as a Function of IC , VC as Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Optimum Source Impedance for Minimum NF as a Function of Frequency, IC as Parameter . . . . 28
Maximum Power Gain as a Function of IC , Frequency as Parameter . . . . . . . . . . . . . . . . . . . . . . 29
Power Gain as a Function of IC , Frequency as Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Power Gain and Total Supply Current as a Function of RF Input Power at 3.5 GHz . . . . . . . . . . . 30
Output 3rd Order Intercept Point as a Function of IC at 3.5 GHz, VC as Parameter . . . . . . . . . . . . 30
Package Outline TSLP-7-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Marking Layout (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
5
Revision 3.2, 2010-06-30
BGB707L7ESD
List of Tables
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9
Table 10
Table 11
Table 12
Table 13
Table 14
Table 15
Table 16
Table 17
Data Sheet
Pinning Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Maximum Ratings at TA = 25°C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Operation Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
DC Characteristics at VCC = 3 V, TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
AC Characteristics in the FM Radio Application as Described in AN177 . . . . . . . . . . . . . . . . . . . . 15
AC Characteristics in the FM Radio Application as Described in AN181 . . . . . . . . . . . . . . . . . . . 15
AC Characteristics in the SDMB Application as Described in TR122, TA = 25°C . . . . . . . . . . . . . 16
AC Characteristics VC = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
AC Characteristics VC = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
AC Characteristics VC = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
AC Characteristics VC = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
AC Characteristics VC = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
AC Characteristics VC = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
AC Characteristics VC = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
AC Characteristics VC = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
AC Characteristics VC = 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
6
Revision 3.2, 2010-06-30
SiGe:C Wideband MMIC LNA with Integrated ESD Protection
1
•
•
•
•
•
•
•
•
•
•
BGB707L7ESD
Features
High performance general purpose wideband MMIC LNA
ESD protection integrated for all pins (3 kV for RF input vs. GND,
2 kV for all other pin combinations, HBM)
Integrated active biasing circuit enables stable operation point
against temperature- and processing-variations
Excellent noise figure from Infineon´s reliable high volume SiGe:C
technology
High gain and linearity at low current consumption
Operation voltage: 1.8 V to 4.0 V
Adjustable operation current 2.1 mA to 25 mA by external resistor
Power-off function
Very small and leadless package TSLP-7-1, 2.0 x 1.3 x 0.4 mm3
Pb-free (RoHS compliant) and halogen-free (WEEE compliant) package
Applications
As Low Noise Amplifier (LNA) in
•
•
•
•
•
Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB,
WiFi, Bluetooth
Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)
and C-band LNB
Multimedia applications such as mobile/portable TV, CATV, FM Radio
3G/4G UMTS/LTE mobile phone applications
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
Package
Marking
BGB707L7ESD
TSLP-7-1
AZ
Data Sheet
7
Revision 3.2, 2010-06-30
BGB707L7ESD
Product Brief
2
Product Brief
The BGB707L7ESD is a Silicon Germanium Carbon (SiGe:C) low noise amplifier MMIC with integrated ESD
protection and active biasing. The device is as flexible as a discrete transistor and features high gain, reduced
power consumption and very low distortion for a very wide range of applications.
The device is based upon Infineon Technologies cost effective SiGe:C technology and comes in a low profile
TSLP-7-1 leadless green package
6
5
4
7
1
Figure 1
Pinning PG-TSLP-7-1
Table 1
Pinning Table
2
Pin
Name
Function
1
VCC
Supply voltage
2
VBias
Bias reference voltage
3
RFin
RF input
4
RFout
RF output
5
VCtrl
On/Off control voltage
6
Adj
Current adjustment pin
7
GND
DC/RF GND
Data Sheet
3
8
Revision 3.2, 2010-06-30
BGB707L7ESD
Product Brief
The following function block in Figure 2 shows the principal schematic how the BGB707L7ESD is used in a circuit.
The Power On/Off function is controlled by applying VCtrl. By using an external resistor Rext the pre-set current of
2.1 mA (which is adjusted by the integrated biasing when Rext is omitted) can be increased. Base- and collector
voltages are applied to the respective pins RFin and RFout by external inductors LB and LC.
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Figure 2
Data Sheet
Function Block
9
Revision 3.2, 2010-06-30
BGB707L7ESD
Maximum Ratings
3
Maximum Ratings
Table 2
Maximum Ratings at TA = 25°C (unless otherwise specified)
Parameter
Supply Voltage
Symbol
VCC
TA = -55°C
Values
Min.
Typ.
Max.
–
–
4.0
–
–
3.5
Unit
Note /
Test Condition
V
–
–
Supply Current at VCC pin
ICC
–
–
25
mA
–
DC Current at RF In pin
IB
–
–
2
mA
–
Voltage at Ctrl On/Off pin
Vctrl
–
–
4.0
V
–
Total Power Dissipation
Ptot
–
–
100
mW
–
Operation Junction
Temperature
TJOp
–
–
150
°C
–
Storage Temperature
TStg
-55
–
150
°C
–
TS<112 °C1)
1) TS is the soldering point temperature. TS is measured at the GND pin (7) at the soldering point to the pcb
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Data Sheet
10
Revision 3.2, 2010-06-30
BGB707L7ESD
Thermal Characteristics
4
Thermal Characteristics
Table 3
Thermal Resistance
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
K/W
–
Max.
1)
Junction - Soldering Point
RthJS
–
375
–
1) For calculation of RthJA please refer to Application Note Thermal Resistance
120
100
Ptot [mW]
80
60
40
20
0
0
50
100
150
Ts [°C]
Figure 3
Data Sheet
Total Power Dissipation Ptot = f (Ts)
11
Revision 3.2, 2010-06-30
BGB707L7ESD
Operation Conditions
5
Operation Conditions
Table 4
Operation Conditions
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
Supply Voltage
VCC
1.8
3.0
4.0
V
–
Voltage Ctrl On/Off pin in On mode
Vctrl
1.2
–
VCC
V
–
Voltage Ctrl On/Off pin in Off mode
Vctrl
-0.3
–
0.3
V
–
6
Electrical Characteristics
6.1
DC Characteristics
Table 5
DC Characteristics at VCC = 3 V, TA = 25°C
Parameter
Supply Current
Symbol
ICC
Values
Unit
Note / Test Condition
mA
VCtrl = 3 V
Min.
Typ.
Max.
–
–
–
1.6
2.1
2.6
Rext = open
–
3
–
Rext = 12 kΩ
–
4.2
–
Rext = 4.7 kΩ
–
6
–
Rext = 2.4 kΩ
–
10
–
Rext = 1 kΩ
Supply current in Off mode
ICC-off
–
–
6
µA
VCtrl = 0 V
Current into VCtrl pin in On mode
ICtrl-on
–
14
20
µA
VCtrl = 3 V
Current into VCtrl pin in Off mode
ICtrl-off
–
–
0.1
µA
VCtrl = 0 V
Data Sheet
12
Revision 3.2, 2010-06-30
BGB707L7ESD
Electrical Characteristics
6.2
Typical DC Characteristic Curves
The measurement setup is an application circuit according to Figure 2 using the integrated biasing.
TA = 25 °C unless otherwise specified.
30
28
1- VCC / VCtrl = 3V
26
1
24
2- VCC / VCtrl = 1.8V
3
3- VCC / VCtrl = 4V
22
ICC [mA]
20
18
16
2
14
12
10
8
6
4
2
0
10
100
1000
10000
100000
Rext [Ohm]
Figure 4
ICC as a Function of Rext , VCC as Parameter
15
14
13
Rext = 1 kΩ
12
11
ICC [mA]
10
9
8
Rext = 2.4 kΩ
7
6
Rext = 4.7 kΩ
5
Rext = 12 kΩ
4
3
2
Rext = OPEN
1
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCC [V]
Figure 5
Data Sheet
ICC as a Function of VCC , VCtrl = 3 V , Rext as Parameter
13
Revision 3.2, 2010-06-30
BGB707L7ESD
Electrical Characteristics
15
14
13
12
11
Rext=1kΩ
10
ICC [mA]
9
8
7
Rext= 2.4kΩ
6
5
Rext= 4.7kΩ
4
Rext= 12kΩ
3
Rext= OPEN
2
1
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCtrl [V]
Figure 6
ICC as a Function of VCtrl , VCC = 3 V , Rext as Parameter
3.0
2.8
2.6
ICC [mA]
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
-50
-30
-10
10
30
50
70
90
110
130
150
Temperature [°C]
Figure 7
Data Sheet
ICC as a Function of Temperature , VCtrl = VCC = 3 V , Rext = open
14
Revision 3.2, 2010-06-30
BGB707L7ESD
Electrical Characteristics
6.3
AC Characteristics
AC characteristics are described in two sub-chapters, first for 100 MHz FM Radio applications, then for higher
frequencies in a 50 Ω environment.
6.3.1
AC Characteristics in FM Radio Applications
Two BGB707L7ESD FM radio application notes are available on our website www.infineon.com/BGB707.
Depending on the impedance of the used antenna, please consult AN177 for high-ohmic antennas and AN181 for
50 Ω antennas. In this chapter you find a summary of the electrical performance as described in these application
notes in table form.
6.3.1.1
High-Ohmic FM Radio Antenna
TA = 25°C, VCC = 3.0 V, ICC = 3.0 mA, VCtrl = 3.0 V, f = 100 MHz, Rext = 12 kΩ
Table 6
AC Characteristics in the FM Radio Application as Described in AN177
Parameter
Symbol
|S21|²
Transducer Gain
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
–
12
–
dB
–
–
dB
–
1)
Input Return Loss
RLIN
–
0.5
Output Return Loss
RLOUT
–
16
–
dB
–
NF
–
1.0
–
dB
–
IP1dB
–
-5.5
–
dBm
–
IIP3
–
-12.5
–
dBm
–
Noise Figure (Zs = 50 Ω)
Input 1 dB Gain Compression Point
rd
Input 3 Order Intercept Point
3)
2)
1) LNA presents a high input impedance match over the 76-108 MHz FM radio band.
2) ICC increases as RF input power level approaches IP1dB.
3) IIP3 value depends on termination of all intermodulation frequency components. Termination used for the measurement is
50 Ω from 0.1 to 6 GHz.
6.3.1.2
50 Ω FM Radio Antenna
TA = 25°C, VCC = 2.8 V, ICC = 4.2 mA, VCtrl = 2.8 V, f = 100 MHz, Rext = 4.7 kΩ
Table 7
AC Characteristics in the FM Radio Application as Described in AN181
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
Transducer Gain
|S21|²
13.5
15
16.5
dB
–
Input Return Loss
RLIN
–
7.5
–
dB
–
Output Return Loss
RLOUT
–
14.5
–
dB
–
Noise figure (Zs = 50 Ω)
NF
–
1.35
1.9
dB
–
–
-10
–
dBm
–
-7.5
-6
–
dBm
–
Input 1 dB Gain Compression Point 1) 2) IP1dB
rd
Input 3 Order Intercept Point
2)3)
IIP3
1) ICC increases as RF input power level approaches IP1dB.
2) Verified by random sampling
3) IIP3 value depends on termination of all intermodulation frequency components. Termination used for the measurement is
50 Ω from 0.1 to 6 GHz.
Data Sheet
15
Revision 3.2, 2010-06-30
BGB707L7ESD
Electrical Characteristics
6.3.2
AC Characteristics in the SDMB Application
A technical report TR122 for LNA applications in the frequency range 2.3 GHz to 2.7 GHz is available on our web
page www.infineon.com/BGB707. In this chapter you find a summary of the electrical performance for the SDMB
application as described in technical report TR122 in table form.
Table 8
AC Characteristics in the SDMB Application as Described in TR122, TA = 25°C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Frequency Range
Freq
–
2.6
–
GHz
–
Supply Voltage
Vcc
–
2.8
–
V
–
Bias Current
Icc
4.4
5.6
6.8
mA
–
Transducer Gain
|S21|²
13
15
17
dB
Power @ port1 = -30 dBm
Transducer Gain (off mode) |S21| off
–
-18
–
dB
–
Noise Figure (Zs = 50 Ω)
NF
–
1.15
1.5
dB
Including 0.1 dB Board losses
Input Return Loss
RLIN
–
13.2
–
dB
–
Output Return Loss
RLOUT
–
12
–
dB
–
Reverse Isolation
IREV
–
27.8
–
dB
Power @ port2 = -10 dBm
Input P1dB
IP1dB
–
-9.6
–
dBm
–
Output P1dB
OP1dB
–
4.4
–
dBm
–
Input IP3
IIP3
–
-1.4
–
dBm
Input power = -30 dBm
Output IP3
OIP3
–
13.6
–
dBm
–
On Switching Time
Ton
–
1.5
–
µs
Measured with C2 = 1 nF
Off Switching Time
Toff
–
4.2
–
µs
–
Stability
k
–
>1
–
2
Data Sheet
16
Stability measured up to 10 GHz
Revision 3.2, 2010-06-30
BGB707L7ESD
Electrical Characteristics
6.3.3
AC Characteristics in Test Fixture
For frequencies from 150 MHz to 10 GHz the measurement setup is a test fixture with Bias-T’s in a 50 Ω system
according to Figure 8 at VC = 3V, TA = 25 °C. The collector current IC is controlled by an external base voltage VB
applied at RFin pin and not by the integrated biasing´s reference voltage VBias. VC controls the collector voltage at
RFout pin. This allows direct measurement of the amplifier performance as a function of bias conditions without
passive components.
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*1'
9&WUO
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9&
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Figure 8
Data Sheet
Testing Circuit for Frequencies from 150 MHz to 10 GHz
17
Revision 3.2, 2010-06-30
BGB707L7ESD
Electrical Characteristics
AC Characteristics VC = 3 V, f = 150 MHz
Table 9
Parameter
Symbol
Values
Min.
Minimum Noise Figure
Transducer Gain
Maximum Power Gain
Output 1 dB Compression
Point1)
rd
Output 3 Order Intercept
Point
Typ.
Unit
Note / Test Condition
dB
ZS = ZSopt
Max.
NFmin
–
0.4
–
IC = 2.1 mA
–
0.4
–
IC = 3 mA
–
0.5
–
IC = 6 mA
–
0.55
–
IC = 10 mA
|S21|²
dB
ZS = ZL = 50 Ω
–
17
–
IC = 2.1 mA
–
19
–
IC = 3 mA
–
24
–
IC = 6 mA
–
27
–
IC = 10 mA
Gms
dB
ZL = ZLopt, ZS = ZSopt
–
31.5
–
IC = 2.1 mA
–
33
–
IC = 3 mA
–
35
–
IC = 6 mA
–
37
–
IC = 10 mA
OP1dB
dBm
–
3.5
–
ICq = 2.1 mA, ICcomp = 11 mA2)
–
4
–
ICq = 3 mA, ICcomp = 11 mA
–
4.5
–
ICq = 6 mA, ICcomp = 11 mA
–
3
–
ICq = 10 mA, ICcomp = 11 mA
OIP3
dBm
–
2
–
IC = 2.1 mA
–
6
–
IC = 3 mA
–
14.5
–
IC = 6 mA
–
19.5
–
IC = 10 mA
1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 2 using the integrated
biasing.
2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB,
cf. Figure 15.
Data Sheet
18
Revision 3.2, 2010-06-30
BGB707L7ESD
Electrical Characteristics
Table 10
AC Characteristics VC = 3 V, f = 450 MHz
Parameter
Symbol
Values
Min.
Minimum Noise Figure
Transducer Gain
Maximum Power Gain
Output 1 dB Compression
Point1)
rd
Output 3 Order Intercept
Point
Typ.
Unit
Note / Test Condition
dB
ZS = ZSopt
Max.
NFmin
–
0.45
–
IC = 2.1 mA
–
0.45
–
IC = 3 mA
–
0.5
–
IC = 6 mA
–
0.6
–
IC = 10 mA
|S21|²
dB
ZS = ZL = 50 Ω
–
17
–
IC = 2.1 mA
–
19
–
IC = 3 mA
–
24
–
IC = 6 mA
–
27
–
IC = 10 mA
Gms
dB
ZL = ZLopt, ZS = ZSopt
–
27
–
IC = 2.1 mA
–
28
–
IC = 3 mA
–
30.5
–
IC = 6 mA
–
32
–
IC = 10 mA
OP1dB
dBm
–
11.5
–
ICq = 2.1 mA, ICcomp = 11 mA2)
–
12
–
ICq = 3 mA, ICcomp = 14 mA
–
11.5
–
ICq = 6 mA, ICcomp = 16 mA
–
9.5
–
ICq = 10 mA, ICcomp = 15 mA
OIP3
dBm
–
2
–
IC = 2.1 mA
–
5.5
–
IC = 3 mA
–
14
–
IC = 6 mA
–
19.5
–
IC = 10 mA
1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 2 using the integrated
biasing.
2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB,
cf. Figure 15.
Data Sheet
19
Revision 3.2, 2010-06-30
BGB707L7ESD
Electrical Characteristics
Table 11
AC Characteristics VC = 3 V, f = 900 MHz
Parameter
Symbol
Values
Min.
Minimum Noise Figure
Transducer Gain
Maximum Power Gain
Output 1 dB Compression
Point1)
rd
Output 3 Order Intercept
Point
Typ.
Unit
Note / Test Condition
dB
ZS = ZSopt
Max.
NFmin
–
0.55
–
IC = 2.1 mA
–
0.55
–
IC = 3 mA
–
0.6
–
IC = 6 mA
–
0.7
–
IC = 10 mA
|S21|²
dB
ZS = ZL = 50 Ω
–
17
–
IC = 2.1 mA
–
19
–
IC = 3 mA
–
23.5
–
IC = 6 mA
–
26
–
IC = 10 mA
Gms
dB
ZL = ZLopt, ZS = ZSopt
–
24
–
IC = 2.1 mA
–
25
–
IC = 3 mA
–
27.5
–
IC = 6 mA
–
29
–
IC = 10 mA
OP1dB
dBm
–
11
–
ICq = 2.1 mA, ICcomp = 13 mA2)
–
11
–
ICq = 3 mA, ICcomp = 15 mA
–
10
–
ICq = 6 mA, ICcomp = 14 mA
–
8.5
–
ICq = 10 mA, ICcomp = 14 mA
OIP3
dBm
–
3.5
–
IC = 2.1 mA
–
8
–
IC = 3 mA
–
17
–
IC = 6 mA
–
19.5
–
IC = 10 mA
1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 2 using the integrated
biasing.
2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB,
cf. Figure 15.
Data Sheet
20
Revision 3.2, 2010-06-30
BGB707L7ESD
Electrical Characteristics
Table 12
AC Characteristics VC = 3 V, f = 1.5 GHz
Parameter
Symbol
Values
Min.
Minimum Noise Figure
Transducer Gain
Maximum Power Gain
Output 1 dB Compression
Point1)
rd
Output 3 Order Intercept
Point
Typ.
Unit
Note / Test Condition
dB
ZS = ZSopt
Max.
NFmin
–
0.6
–
IC = 2.1 mA
–
0.6
–
IC = 3 mA
–
0.6
–
IC = 6 mA
–
0.7
–
IC = 10 mA
|S21|²
dB
ZS = ZL = 50 Ω
–
16
–
IC = 2.1 mA
–
18.5
–
IC = 3 mA
–
22.5
–
IC = 6 mA
–
24.5
–
IC = 10 mA
Gms
dB
ZL = ZLopt, ZS = ZSopt
–
21.5
–
IC = 2.1 mA
–
23
–
IC = 3 mA
–
25.5
–
IC = 6 mA
–
27
–
IC = 10 mA
OP1dB
dBm
–
10.5
–
ICq = 2.1 mA, ICcomp = 14 mA2)
–
10
–
ICq = 3 mA, ICcomp = 16 mA
–
9
–
ICq = 6 mA, ICcomp = 15 mA
–
8
–
ICq = 10 mA, ICcomp = 15 mA
OIP3
dBm
–
3.5
–
IC = 2.1 mA
–
8
–
IC = 3 mA
–
17
–
IC = 6 mA
–
19.5
–
IC = 10 mA
1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 2 using the integrated
biasing.
2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB,
cf. Figure 15.
Data Sheet
21
Revision 3.2, 2010-06-30
BGB707L7ESD
Electrical Characteristics
Table 13
AC Characteristics VC = 3 V, f = 1.9 GHz
Parameter
Symbol
Values
Min.
Minimum Noise Figure
Transducer Gain
Maximum Power Gain
Output 1 dB Compression
Point1)
rd
Output 3 Order Intercept
Point
Typ.
Unit
Note / Test Condition
dB
ZS = ZSopt
Max.
NFmin
–
0.6
–
IC = 2.1 mA
–
0.6
–
IC = 3 mA
–
0.6
–
IC = 6 mA
–
0.7
–
IC = 10 mA
|S21|²
dB
ZS = ZL = 50 Ω
–
16
–
IC = 2.1 mA
–
18
–
IC = 3 mA
–
21.5
–
IC = 6 mA
–
23
–
IC = 10 mA
Gms
dB
ZL = ZLopt, ZS = ZSopt
–
21
–
IC = 2.1 mA
–
22
–
IC = 3 mA
–
24
–
IC = 6 mA
–
26
–
IC = 10 mA
OP1dB
dBm
–
10
–
ICq = 2.1 mA, ICcomp = 15 mA2)
–
10
–
ICq = 3 mA, ICcomp = 16 mA
–
8.5
–
ICq = 6 mA, ICcomp = 14 mA
–
8
–
ICq = 10 mA, ICcomp = 14 mA
OIP3
dBm
–
3.5
–
IC = 2.1 mA
–
7.5
–
IC = 3 mA
–
17
–
IC = 6 mA
–
19.5
–
IC = 10 mA
1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 2 using the integrated
biasing.
2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB,
cf. Figure 15.
Data Sheet
22
Revision 3.2, 2010-06-30
BGB707L7ESD
Electrical Characteristics
Table 14
AC Characteristics VC = 3 V, f = 2.4 GHz
Parameter
Symbol
Values
Min.
Minimum Noise Figure
Transducer Gain
Maximum Power Gain
Output 1 dB Compression
Point1)
rd
Output 3 Order Intercept
Point
Typ.
Unit
Note / Test Condition
dB
ZS = ZSopt
Max.
NFmin
–
0.65
–
IC = 2.1 mA
–
0.6
–
IC = 3 mA
–
0.6
–
IC = 6 mA
–
0.7
–
IC = 10 mA
|S21|²
dB
ZS = ZL = 50 Ω
–
15.5
–
IC = 2.1 mA
–
17
–
IC = 3 mA
–
20
–
IC = 6 mA
–
21.5
–
IC = 10 mA
Gms
dB
ZL = ZLopt, ZS = ZSopt
–
20
–
IC = 2.1 mA
–
21
–
IC = 3 mA
–
23
–
IC = 6 mA
–
25
–
IC = 10 mA
OP1dB
dBm
–
10
–
ICq = 2.1 mA, ICcomp = 15 mA2)
–
10
–
ICq = 3 mA, ICcomp = 16 mA
–
9
–
ICq = 6 mA, ICcomp = 14 mA
–
8
–
ICq = 10 mA, ICcomp = 14 mA
OIP3
dBm
–
4.5
–
IC = 2.1 mA
–
9
–
IC = 3 mA
–
17.5
–
IC = 6 mA
–
19.5
–
IC = 10 mA
1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 2 using the integrated
biasing.
2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB,
cf. Figure 15.
Data Sheet
23
Revision 3.2, 2010-06-30
BGB707L7ESD
Electrical Characteristics
Table 15
AC Characteristics VC = 3 V, f = 3.5 GHz
Parameter
Symbol
Values
Min.
Minimum Noise Figure
Transducer Gain
Maximum Power Gain
Output 1 dB Compression
Point1)
rd
Output 3 Order Intercept
Point
Typ.
Unit
Note / Test Condition
dB
ZS = ZSopt
Max.
NFmin
–
0.8
–
IC = 2.1 mA
–
0.75
–
IC = 3 mA
–
0.7
–
IC = 6 mA
–
0.75
–
IC = 10 mA
|S21|²
dB
ZS = ZL = 50 Ω
–
13.5
–
IC = 2.1 mA
–
15.5
–
IC = 3 mA
–
18
–
IC = 6 mA
–
19
–
IC = 10 mA
Gms
dB
ZL = ZLopt, ZS = ZSopt
–
18.5
–
IC = 2.1 mA
–
20
–
IC = 3 mA
–
22
–
IC = 6 mA
–
23.5
–
IC = 10 mA
OP1dB
dBm
–
10
–
ICq = 2.1 mA, ICcomp = 16 mA2)
–
10
–
ICq = 3 mA, ICcomp = 16 mA
–
9
–
ICq = 6 mA, ICcomp = 15 mA
–
8
–
ICq = 10 mA, ICcomp = 15 mA
OIP3
dBm
–
5.5
–
IC = 2.1 mA
–
12
–
IC = 3 mA
–
17.5
–
IC = 6 mA
–
19
–
IC = 10 mA
1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 2 using the integrated
biasing.
2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB,
cf. Figure 15.
Data Sheet
24
Revision 3.2, 2010-06-30
BGB707L7ESD
Electrical Characteristics
Table 16
AC Characteristics VC = 3 V, f = 5.5 GHz
Parameter
Symbol
Values
Min.
Minimum Noise Figure
Transducer Gain
Maximum Power Gain
Output 1 dB Compression
Point1)
rd
Output 3 Order Intercept
Point
Typ.
Unit
Note / Test Condition
dB
ZS = ZSopt
Max.
NFmin
–
1.05
–
IC = 2.1 mA
–
1
–
IC = 3 mA
–
0.9
–
IC = 6 mA
–
0.95
–
IC = 10 mA
|S21|²
dB
ZS = ZL = 50 Ω
–
11.5
–
IC = 2.1 mA
–
13
–
IC = 3 mA
–
15
–
IC = 6 mA
–
15.5
–
IC = 10 mA
Gms
dB
ZL = ZLopt, ZS = ZSopt
–
17.5
–
IC = 2.1 mA
–
18.5
–
IC = 3 mA
–
20
–
IC = 6 mA
–
19
–
IC = 10 mA
OP1dB
dBm
–
10.5
–
ICq = 2.1 mA, ICcomp = 17 mA2)
–
10
–
ICq = 3 mA, ICcomp = 17 mA
–
9
–
ICq = 6 mA, ICcomp = 15 mA
–
8
–
ICq = 10 mA, ICcomp = 15 mA
OIP3
dBm
–
6.5
–
IC = 2.1 mA
–
12
–
IC = 3 mA
–
22
–
IC = 6 mA
–
21
–
IC = 10 mA
1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 2 using the integrated
biasing.
2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB,
cf. Figure 15.
Data Sheet
25
Revision 3.2, 2010-06-30
BGB707L7ESD
Electrical Characteristics
Table 17
AC Characteristics VC = 3 V, f = 10 GHz
Parameter
Symbol
Values
Min.
Minimum Noise Figure
Transducer Gain
Maximum Power Gain
Output 1 dB Compression
Point1)
rd
Output 3 Order Intercept
Point
Typ.
Unit
Note / Test Condition
dB
ZS = ZSopt
Max.
NFmin
–
2
–
IC = 2.1 mA
–
1.8
–
IC = 3 mA
–
1.5
–
IC = 6 mA
–
1.5
–
IC = 10 mA
|S21|²
dB
ZS = ZL = 50 Ω
–
5.5
–
IC = 2.1 mA
–
7
–
IC = 3 mA
–
9
–
IC = 6 mA
–
10
–
IC = 10 mA
Gms
dB
ZL = ZLopt, ZS = ZSopt
–
14.5
–
IC = 2.1 mA
–
15
–
IC = 3 mA
–
15.5
–
IC = 6 mA
–
15.5
–
IC = 10 mA
OP1dB
dBm
–
6
–
ICq = 2.1 mA, ICcomp = 16 mA2)
–
6
–
ICq = 3 mA, ICcomp = 16 mA
–
4
–
ICq = 6 mA, ICcomp = 15 mA
–
4
–
ICq = 10 mA, ICcomp = 15 mA
OIP3
dBm
–
2.5
–
IC = 2.1 mA
–
7
–
IC = 3 mA
–
19.5
–
IC = 6 mA
–
18
–
IC = 10 mA
1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 2 using the integrated
biasing.
2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB,
cf. Figure 15.
Data Sheet
26
Revision 3.2, 2010-06-30
BGB707L7ESD
Electrical Characteristics
6.3.4
Typical AC Characteristic Curves
The measurement setup is the same as described in Figure 8 except for Figure 15 where compression is
measured in a 50 Ohm application circuit according to Figure 2 using the integrated biasing; VC = 3V, TA = 25 °C.
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
0.03 to 10 GHz
0.1
10
step: 1 GHz
0.1
0
0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
−0.1
−10
−0.2
−5
−4
−0.3
−3
−0.4
2.1 mA
−0.5
−2
3.0 mA
6.0 mA
−1.5
10 mA
−1
Figure 9
S11 as a Function of Frequency, IC as Parameter
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
0.03 to 10 GHz
0.1
10
step: 1 GHz
0.1
0
0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
−0.1
−10
−0.2
−5
−4
−0.3
−3
−0.4
2.1 mA
−0.5
−2
−1.5
−1
Figure 10
Data Sheet
3.0 mA
6.0 mA
10 mA
S22 as a Function of Frequency, IC as Parameter
27
Revision 3.2, 2010-06-30
BGB707L7ESD
Electrical Characteristics
45
4.00V
3.00V
40
fT [GHz]
35
30
25
1.80V
20
15
Figure 11
0
5
10
15
IC [mA]
20
25
30
Transition Frequency as a Function of IC , VC as Parameter
1
1.5
0.5
2
0.4
3
0.3
4
3.5GHz
2.4GHz
1.9GHz
1.5GHz
5.5GHz
0.2
0.1
5
10
0.9GHz
0.1
0
0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
0.45GHz
0.15GHz
I = 10mA
c
−0.1
Ic = 2.1mA
I = 6.0mA
c
10GHz
−0.2
−5
−4
I = 3.0mA
c
−0.3
−10
−3
−0.4
−0.5
−2
−1.5
−1
Figure 12
Data Sheet
Optimum Source Impedance for Minimum NF as a Function of Frequency, IC as Parameter
28
Revision 3.2, 2010-06-30
BGB707L7ESD
Electrical Characteristics
42
0.15GHz
39
36
0.45GHz
33
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
Gmax [dB]
30
27
24
21
5.50GHz
18
10.00GHz
15
12
9
Figure 13
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
IC [mA]
Maximum Power Gain as a Function of IC , Frequency as Parameter
36
33
0.15GHz
0.45GHz
0.90GHz
30
27
1.50GHz
1.90GHz
2.40GHz
S21 [dB]
24
21
3.50GHz
18
5.50GHz
15
12
10.00GHz
9
6
3
0
Figure 14
Data Sheet
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
IC [mA]
Power Gain as a Function of IC , Frequency as Parameter
29
Revision 3.2, 2010-06-30
BGB707L7ESD
Electrical Characteristics
19
30
18
28
17
P1dB, 10mA
16
26
15
24
14
22
13
Gain [dB]
18
11
P1dB, 2.1mA
10
16
9
14
8
12
7
Current [mA]
20
12
10
6
8
5
4
6
Gain , Icq = 2.1mA
Gain , Icq = 10mA
Icc , Icq = 2.1mA
Icc , Icq = 10mA
3
2
1
4
2
0
0
-40
-37.5
-35
-32.5
-30
-27.5
-25
-22.5
-20
-17.5
-15
-12.5
-10
-7.5
-5
-2.5
0
Input power [dBm]
Figure 15
Power Gain and Total Supply Current as a Function of RF Input Power at 3.5 GHz
22
20
4V
3V
18
1.8V
OIP3 [dBm]
16
14
12
10
8
6
4
Figure 16
Data Sheet
0
1
2
3
4
5
6
7
IC [mA]
8
9
10
11
12
Output 3rd Order Intercept Point as a Function of IC at 3.5 GHz, VC as Parameter
30
Revision 3.2, 2010-06-30
BGB707L7ESD
Package Information
Package Information
Top view
Bottom view
0.4
+0.1
1.3 ±0.05
0.05 MAX.
1 ±0.05
6
1.7 ±0.05
1.2 ±0.035 1)
7
3
Pin 1 marking
2
1
6 x 0.2 ±0.035 1)
1) Dimension applies to plated terminal
TSLP-7-1-PO V04
Package Outline TSLP-7-1
NSM D
SMD
Solder mask
0.25
0.2
0.3
R0.1
0.3
0.2
0.2
0.25
0.25
1.9
0.2
0.25
1.9
1.9
0.3
Copper
0.25
0.2
0.2
0.25
0.2
0.2
0.3
0.2
0.2
1.9
0.3
1.4
0.2
1.4
0.2
1.4
0.2
1.4
0.3
Stencil apertures
Copper
Solder mask
0.2
Figure 17
2 ±0.05
5
6 x 0.2 ±0.035 1)
4
1.1 ±0.035 1)
7
0.25
0.25
R0.1
Stencil apertures
TSLP-7-1-FP V01
Figure 18
Footprint
BGB707L7ESD
Type Code
AZ
AX
Figure 19
Marking Layout (top view)
0.5
8
2.18
4
Pin 1
marking
Figure 20
Data Sheet
1.45
TSLP-7-1-TP V03
Tape Dimensions
31
Revision 3.2, 2010-06-30
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG