BGA628L7 Silicon Germanium Wide Band Low Noise Amplifier Data Sheet Revision 1.1, 2009-12-17 Preliminary RF & Protection Devices Edition 2009-12-17 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA628L7 BGA628L7 Silicon Germanium Wide Band Low Noise Amplifier Revision History: 2009-12-17, Revision 1.1 Previous Revision: 2009-08-03, Revision 1.0 Page Subjects (major changes since last revision) 5 Features and description updated 6 Table “Pin Definition and Function“ added 13 Application Information added Trademarks of Infineon Technologies AG A-GOLD™, BlueMoon™, COMNEON™, CONVERGATE™, COSIC™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CONVERPATH™, CORECONTROL™, DAVE™, DUALFALC™, DUSLIC™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, E-GOLD™, EiceDRIVER™, EUPEC™, ELIC™, EPIC™, FALC™, FCOS™, FLEXISLIC™, GEMINAX™, GOLDMOS™, HITFET™, HybridPACK™, INCA™, ISAC™, ISOFACE™, IsoPACK™, IWORX™, M-GOLD™, MIPAQ™, ModSTACK™, MUSLIC™, my-d™, NovalithIC™, OCTALFALC™, OCTAT™, OmniTune™, OmniVia™, OptiMOS™, OPTIVERSE™, ORIGA™, PROFET™, PRO-SIL™, PrimePACK™, QUADFALC™, RASIC™, ReverSave™, SatRIC™, SCEPTRE™, SCOUT™, S-GOLD™, SensoNor™, SEROCCO™, SICOFI™, SIEGET™, SINDRION™, SLIC™, SMARTi™, SmartLEWIS™, SMINT™, SOCRATES™, TEMPFET™, thinQ!™, TrueNTRY™, TriCore™, TRENCHSTOP™, VINAX™, VINETIC™, VIONTIC™, WildPass™, X-GOLD™, XMM™, X-PMU™, XPOSYS™, XWAY™. Other Trademarks AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO. OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2009-10-19 Preliminary Data Sheet 3 Revision 1.1, 2009-12-17 BGA628L7 Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 2.1 2.2 2.2.1 2.2.2 2.2.3 2.2.4 2.2.5 2.2.6 2.2.7 2.2.8 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Electrical Characteristics at f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Electrical Characteristics at f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Electrical Characteristics at f = 1.575 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Electrical Characteristics at f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Electrical Characteristics at f = 2.14 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Electrical Characteristics at f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Electrical Characteristics at f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Electrical Characteristics at f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 3 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Preliminary Data Sheet 4 Revision 1.1, 2009-12-17 Silicon Germanium Wide Band Low Noise Amplifier BGA628L7 Features • • • • • • • • • • • Extremely thin and small dimension (1.4 mm x 1.26 mm x 0.31 mm only) Operating frequency range 0.4 - 6 GHz High gain at low current consumption of 5.8 mA Gma = 21.5 dB at 1.575 GHz Gma = 19.0 dB at 2.4 GHz Low noise figure NFmin = 0.75 dB at 1.575 GHz NFmin = 0.8 dB at 2.4 GHz Typical supply voltage: 2.75 V Off mode Integrated RF choke on internal bias network Input and Output pre-matched on chip Low external part count 2 kV HBM ESD protection on all pins Leadless, Pb-free (RoHS compliant) and halogen-free TSLP-7-8 package 6 5 4 7 1 2 3 TSLP-7-8 Applications • General Purpose LNA for Bluetooth, GPS, ISDB-T Mobile TV, UMTS, Wi-Fi and WLAN Vcc,4 In,2 Out,5 On/Off 10kΩ GND,7 BGA 628L7 _Pin_ connection.vsd Figure 1 Pin Connection Note: ESD: Electrostatic discharge sensitive device, observe handling precaution Product Name Marking Package BGA628L7 BR TSLP-7-8 Preliminary Data Sheet 5 Revision 1.1, 2009-12-17 BGA628L7 Features Description The BGA628L7 is a wide band low noise amplifier, based on Infineon Technologies’ Silicon Germanium Technology B7HFM. It features extremely small form factor with height of 0.32 mm maximum, and size of 1.4 x 1.26 mm2 only. Such small dimension, together with the low external part count, has made it ideal for size-critical modules e.g. for WLAN, mobile TV or cellular phones. Having an On/Off switch on-chip, the LNA's Out pin is simutaneously used for RF Out and On/Off switch. This functionality can be accessed using a RF-Choke at the Out pin, where a DC level of 0 V or an open switches the device on and a DC level of VCC switches off. Please refer to the product website (www.infineon.com) for various application examples, application notes and technical reports. Pin Definition and Function Table 1 Pin Definition and Function Pin No. Symbol Function 1 n.c. not connected 2 In RF input 3 n.c. not connected 4 Vcc DC supply 5 Out RF output and On/Off switch 6 n.c. not connected 7 GND Ground Preliminary Data Sheet 6 Revision 1.1, 2009-12-17 BGA628L7 Maximum Ratings 1 Maximum Ratings Table 2 Maximum Ratings Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Voltage at pin VCC VCC – – 3.5 V – Voltage at pin Out Vout – – 4 V – Current into pin In Iin – – 0.1 mA – Current into pin Out Iout – – 1 mA – Current into pin VCC IVcc – – 10 mA – Pin – – 6 dBm – Ptot – – 35 mW – Junction temperature TJ – – 150 °C – Ambient temperature range TA 65 – 150 °C – Storage temperature range TSTG 65 – 150 °C – – – 2000 V – RF input power Total power dissipation, TS < 138 °C 1) ESD capability all pins (HBM: JESD22-A114) VESD 1) TS is measured on the ground lead at the soldering point Note: All Voltages refer to GND-Node Thermal Resistance Table 3 Thermal Resistance Parameter Value Unit RthJS 330 Junction - soldering point1) 1) For calculation of RthJA please refer to Application Note Thermal Resistance K/W Preliminary Data Sheet Symbol 7 Revision 1.1, 2009-12-17 BGA628L7 Electrical Characteristics 2 Electrical Characteristics 2.1 DC Characteristics Table 4 DC Characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Total device on current Itot-on – 5.8 – mA VCC = 2.75 V Total device off current Itot-off – 260 – μA VCC = 2.75 V, Vout = VCC On / Off switch control voltage Von 0 – 0.8 V VCC = 2.75 V ON-Mode: Vout = Von Voff 2.0 – 3.5 V VCC = 2.75 V OFF-Mode: Vout = Voff Top View 1 7 6 In 2 BGA 628L 7 5 Out TSLP-7 -8 3 4 DC, 2.75V BGA 628L 7_S_Parameter _Circuit.vsd Figure 2 S-Parameter Test Circuit (loss-free microstrip line) Preliminary Data Sheet 8 Revision 1.1, 2009-12-17 BGA628L7 Electrical Characteristics 2.2 AC Characteristics 2.2.1 Electrical Characteristics at f = 450 MHz Table 5 Electrical Characteristics at TA = 25 °C (measured according to Figure 2), VCC = 2.75 V, unless otherwise specified Parameter Symbol Maximum available power gain Gma Values Min. Typ. Max. Unit Note / Test Condition – 24.5 – dB – |S21| 2 – 18.8 – dB – Insertion power gain (Off-State) |S21| 2 – -42 – dB Vout = 2.75 V Input return loss RLin – 2 – dB – Output return loss RLout – 11 – dB – Minimum noise figure NFmin – 0.65 – dB ZS = ZSopt NF50Ω – 0.8 – dB ZS = ZL =50 Ω IIP3 – -13 – dBm Δf = 1 MHz, PIN = -28 dBm Insertion power gain Noise figure in 50 Ω System Input third order intercept point (On-State) 1) Input power at 1 dB gain compression P-1dB – -24.5 – dBm – 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz 2.2.2 Electrical Characteristics at f = 900 MHz Table 6 Electrical Characteristics at TA = 25 °C (measured according to Figure 2), VCC = 2.75 V, unless otherwise specified Parameter Symbol Maximum available power gain Gma Values Min. Typ. Max. Unit Note / Test Condition – 23 – dB – |S21| 2 – 18.8 – dB – Insertion power gain (Off-State) |S21| 2 – -34 – dB Vout = 2.75 V Input return loss RLin – 3 – dB – Output return loss RLout – 14 – dB – Minimum noise figure NFmin – 0.7 – dB ZS = ZSopt NF50Ω – 0.8 – dB ZS = ZL =50 Ω IIP3 – -10 – dBm Δf = 1 MHz, PIN = -28 dBm Insertion power gain Noise figure in 50 Ω System Input third order intercept point (On-State) 1) Input power at 1 dB gain compression P-1dB – -24 – dBm – 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz Preliminary Data Sheet 9 Revision 1.1, 2009-12-17 BGA628L7 Electrical Characteristics 2.2.3 Electrical Characteristics at f = 1.575 GHz Table 7 Electrical Characteristics at TA = 25 °C (measured according to Figure 2), VCC = 2.75 V, unless otherwise specified Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. – 21.5 – dB – Maximum available power gain Gma Insertion power gain |S21|2 – 18 – dB – Insertion power gain (Off-State) |S21| 2 – -27 – dB Vout = 2.75 V Input return loss RLin – 4 – dB – Output return loss RLout – 11 – dB – Minimum noise figure NFmin – 0.75 – dB ZS = ZSopt NF50Ω – 0.85 – dB ZS = ZL =50 Ω IIP3 – -2 – dBm Δf = 1 MHz, PIN = -28 dBm Noise figure in 50 Ω System Input third order intercept point (On-State) 1) Input power at 1 dB gain compression P-1dB – -20.5 – dBm – 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz 2.2.4 Electrical Characteristics at f = 1.9 GHz Table 8 Electrical Characteristics at TA = 25 °C (measured according to Figure 2), VCC = 2.75 V, unless otherwise specified Parameter Maximum available power gain Symbol Gma Values Min. Typ. Max. Unit Note / Test Condition – 21.0 – dB – |S21| 2 – 17.5 – dB – Insertion power gain (Off-State) |S21| 2 – -26 – dB Vout = 2.75 V Input return loss RLin – 5 – dB – Output return loss RLout – 10 – dB – Minimum noise figure NFmin – 0.8 – dB ZS = ZSopt Noise figure in 50 Ω System NF50Ω – 0.9 – dB ZS = ZL =50 Ω Input third order intercept point1) IIP3 – -1 – dBm Δf = 1 MHz, PIN = -28 dBm Insertion power gain Input power at 1 dB gain compression P-1dB – -20 – dBm – 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz Preliminary Data Sheet 10 Revision 1.1, 2009-12-17 BGA628L7 Electrical Characteristics 2.2.5 Electrical Characteristics at f = 2.14 GHz Table 9 Electrical Characteristics at TA = 25 °C (measured according to Figure 2), VCC = 2.75 V, unless otherwise specified Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. – 20 – dB – Maximum available power gain Gma Insertion power gain |S21|2 – 17 – dB – 2 Insertion power gain (Off-State) |S21| – -24 – dB Vout = 2.75 V Input return loss RLin – 5 – dB – Output return loss RLout – 10 – dB – Minimum noise figure NFmin – 0.8 – dB ZS = ZSopt NF50Ω – 0.9 – dB ZS = ZL =50 Ω IIP3 – 0 – dBm Δf = 1 MHz, PIN = -28 dBm Noise figure in 50 Ω System Input third order intercept point (On-State) 1) Input power at 1 dB gain compression P-1dB – -18.5 – dBm – 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz 2.2.6 Electrical Characteristics at f = 2.4 GHz Table 10 Electrical Characteristics at TA = 25 °C (measured according to Figure 2), VCC = 2.75 V, unless otherwise specified Parameter Maximum available power gain Symbol Gma Values Min. Typ. Max. Unit Note / Test Condition – 19 – dB – |S21| 2 – 16 – dB – Insertion power gain (Off-State) |S21| 2 – -24 – dB Vout = 2.75 V Input return loss RLin – 6 – dB – Output return loss RLout – 9 – dB – Minimum noise figure NFmin – 0.8 – dB ZS = ZSopt Noise figure in 50 Ω System NF50Ω – 0.95 – dB ZS = ZL =50 Ω Input third order intercept point1) IIP3 – 2 – dBm Δf = 1 MHz, PIN = -28 dBm Insertion power gain Input power at 1 dB gain compression P-1dB – -17.5 – dBm – 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz Preliminary Data Sheet 11 Revision 1.1, 2009-12-17 BGA628L7 Electrical Characteristics 2.2.7 Electrical Characteristics at f = 3.5 GHz Table 11 Electrical Characteristics at TA = 25 °C (measured according to Figure 2), VCC = 2.75 V, unless otherwise specified Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. – 16 – dB – Maximum available power gain Gma Insertion power gain |S21|2 – 13.5 – dB – Insertion power gain (Off-State) |S21| 2 – -22 – dB Vout = 2.75 V Input return loss RLin – 7 – dB – Output return loss RLout – 8 – dB – Minimum noise figure NFmin – 0.9 – dB ZS = ZSopt NF50Ω – 1.0 – dB ZS = ZL =50 Ω IIP3 – 5 – dBm Δf = 1 MHz, PIN = -28 dBm Noise figure in 50 Ω System Input third order intercept point 1) Input power at 1 dB gain compression P-1dB – -14.5 – dBm – 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz 2.2.8 Electrical Characteristics at f = 5.5 GHz Table 12 Electrical Characteristics at TA = 25 °C (measured according to Figure 2), VCC = 2.75 V, unless otherwise specified Parameter Maximum available power gain Symbol Gma Values Min. Typ. Max. Unit Note / Test Condition – 10 – dB – |S21| 2 – 8 – dB – Insertion power gain (Off-State) |S21| 2 – -23 – dB Vout = 2.75 V Input return loss RLin – 8 – dB – Output return loss RLout – 6 – dB – Minimum noise figure NFmin – 1.1 – dB ZS = ZSopt Noise figure in 50 Ω System NF50Ω – 1.3 – dB ZS = ZL =50 Ω Input third order intercept point1) IIP3 – 9 – dBm Δf = 1 MHz, PIN = -28 dBm Insertion power gain Input power at 1 dB gain compression P-1dB – -11 – dBm – 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz Preliminary Data Sheet 12 Revision 1.1, 2009-12-17 BGA628L7 Application Information 3 Application Information A list of all application notes is available at http://goto.infineon.com/smallsignaldiscretes-appnotes. BGA628 L7_ Application_Board .vsd Figure 3 Drawing of Application Board TOP- Layer CU 35 µm FR4 200 µm Core GND 1 CU 35 µm FR4 800 µm GND 2 CU 35 µm BGA 628L7 _Cross_section.vsd Figure 4 Cross-section of Application Board Preliminary Data Sheet 13 Revision 1.1, 2009-12-17 BGA628L7 Package Information Package Information Bottom view 1.26 ±0.05 0.31 +0.01 -0.02 0.03 A 4 5 0.05 B B 7 3 2 Pin 1 marking 1 0.48 0.03 B (0.05) 2) 6 x 0.2 ±0.035 1) 1) Dimension applies to plated terminals 2) Dimension of 0.02 MIN. is guaranteed Figure 5 0.03 B 0.05 A 6 0.2 MIN. 1.1 0.5 ±0.0351) A (0.05) 2) 0.05 MAX. 1.16 ±0.035 1) 0.96 6 x 0.2 ±0.035 1) Top view 1.4 ±0.05 4 TSLP-7-8-PO V01 Package Dimensions for TSLP-7-8 SMD 1.21 0.51 0.25 0.25 0.25 0.23 0.45 0.25 0.23 0.25 Copper 0.2 0.25 0.2 1.35 0.2 0.45 0.25 0.2 1.35 0.25 0.25 1.21 0.51 0.25 0.23 Solder mask Vias 0.23 Stencil apertures TSLP-7-8-FP V01 Figure 6 Footprint TSLP-7-8 Type code 12 Data code Pin 1 Marking TSLP-7-8-MK V01 Figure 7 Marking Layout Preliminary Data Sheet 14 Revision 1.1, 2009-12-17 BGA628L7 Package Information 0.4 1.7 Pin 1 marking Figure 8 8 4 1.6 TSLP-7-8-TP V01 Tape & Reel Dimensions (Ø reel 180 mm, pieces/reel 7500) Preliminary Data Sheet 15 Revision 1.1, 2009-12-17 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG