PD - 91447A IRHNA9064 IRHNA93064 JANSR2N7424U JANSF2N7424U REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR P-CHANNEL RAD HARD Ω, RAD HARD HEXFET -60 Volt, 0.045Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 3 X 105 Rads (Si). Under identical pre- and postradiation test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demonstrated immunity to SEE failure. Since the P-Channel RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. P-Channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Product Summary Part Number IRHNA9064 IRHNA93064 BVDSS -60V -60V ! ! ! ! ! ! ! ! ! ! ! ! ! Radiation Hardened up to 3 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Parameter VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current " Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy # Avalanche Current " Repetitive Avalanche Energy " Peak Diode Recovery dv/dt $ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight www.irf.com ID -48A -48A Features: Pre-Irradiation Absolute Maximum Ratings ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C RDS(on) 0.045Ω 0.045Ω IRHNA9064, IRHNA93064 -48 -30 -192 300 2.4 ±20 500 -48 30 4.4 -55 to 150 Units A W W/°C V mJ A mJ V/ns o 300 ( for 5 Sec.) 3.3 (typical) C g 1 8/25/98 IRHNA9064, IRHNA93064 Devices Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage -60 — — V — -0.055 — V/°C — — -2.0 18 — — — — — — — — 0.045 0.048 -4.0 — -25 -250 ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance — — — — — — — — — — — — — — — — — — — 0.8 -100 100 300 70 91 35 150 200 200 — LS Internal Source Inductance — 2.8 — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 6700 2800 920 — — — Ω V S( ) Ω BVDSS µA nA nC ns nH pF Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID =-30A % VGS = -12V, ID = -48A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -30A % VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-12V, ID = -48A VDS = Max Rating x 0.5 VDD = -30V, ID = -48A, RG = 2.35Ω Measured from drain Modified MOSFET symbol lead, 6mm (0.25 in) from showing the internal inducpackage to center of die. tances. Measured from source lead, 6mm (0.25 in) from package to source bonding pad. VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) " — — — — -48 -192 A VSD trr QRR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — -3.0 270 2.5 V ns ∝C ton Forward Turn-On Time Test Conditions Modified MOSFET symbol showing the integral reversep-njunctionrectifier. Tj = 25°C, IS = -48A, VGS = 0V % Tj = 25°C, IF = -48A, di/dt ≤ 100A/µs VDD ≤ -50V % Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB 2 Junction-to-Case Junction-to-PCboard Min Typ Max — — — 1.6 0.42 — Units °C/W Test Conditions Soldered to a 1” square copper-clad board www.irf.com Radiation Characteristics IRHNA9064, IRHNA93064 Devices Radiation Performance of Rad Hard HEXFETs IInternational Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier com prises three radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MIL-STD-750, test method 1019 condition A. International Rectifier has imposed a standard gate condition of -12 volts per note 5 and a VDS bias condition equal to 80% of the device rated voltage per note 6. Pre- and post- irradiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table1,column1, IRHNA9064.Post-irradiation limits of the devices irradiated to 3 x 105 Rads (Si) are presented in Table 1, column 2, IRHNA93064. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and Table 1. Low Dose Rate () VSD High dose rate testing may be done on a special request basis using a dose rate up to 1 x 1012 Rads (Si)/Sec (See Table 2). International Rectifier radiation hardened P-Channel HEXFETs are considered to be neutron-tolerant, as stated in MIL-PRF-19500 Group D. International Rectifier radiation hardened P-Channel HEXFETs have been characterized in heavy ion Single Event Effects (SEE) environments. Single Event Effects characterization is shown in Table 3. IRHNA9064 IRHNA93064 Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 3 x 105 Rads (Si) the only parametric limit change is VGS(th) maximum. Test Conditions * 100K Rads (Si) 300K Rads (Si) Units Drain-to-Source Breakdown Voltage Gate Threshold Voltage&% Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source&% On-State Resistance One Diode Forward Voltage&% Min Max Min Max -60 -2.0 — — — — — -4.0 -100 100 -25 .045 -60 -2.0 — — — — — -5.0 -100 100 -25 .045 µA Ω VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS=0.8 x Max Rating, VGS =0V VGS = -12V, ID =-30A — -3.0 — -3.0 V TC = 25°C, IS = -48A,VGS = 0V V nA Table 2. High Dose Rate&' 1011 Rads (Si)/sec 1012 Rads (Si)/sec Parameter VDSS Drain-to-Source Voltage IPP di/dt L1 Min Typ Max Min Typ Max Units Test Conditions — — -48 — — -48 V Applied drain-to-source voltage during gamma-dot — -100 — — -100 — A Peak radiation induced photo-current — -800 — — -160 — A/µsec Rate of rise of photo-current 0.1 — — 0.8 — — µH Circuit inductance required to limit di/dt Table 3. Single Event Effects Ion LET (Si) (MeV/mg/cm2) Fluence (ions/cm2) Cu 28 3x 105 www.irf.com Range (µm) ~43 VDSBias (V) -60 VGS Bias (V) 5 3 IRHNA9064, IRHNA93064 Devices 1000 Pre-Irradiation 1000 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 100 100 -5.0V 20µs PULSE WIDTH TJ = 25 °C 10 0.1 1 10 -5.0V 3.5 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 150 ° C V DS = -25V 20µs PULSE WIDTH 5 6 7 8 9 10 11 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10 100 Fig 2. Typical Output Characteristics 1000 10 1 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 20µs PULSE WIDTH TJ = 150 °C 10 0.1 100 -VDS , Drain-to-Source Voltage (V) 4 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP TOP 12 ID = -48A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation IRHNA9064, IRHNA93064 Devices VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 10000 8000 Ciss 6000 Coss 4000 2000 Crss 20 -VGS , Gate-to-Source Voltage (V) 12000 ID = -48A VDS =-48V VDS =-30V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 0 100 100 150 200 250 300 350 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) -IID , Drain Current (A) -ISD , Reverse Drain Current (A) 50 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) 100 TJ = 25 ° C 10 1 0.0 V GS = 0 V 1.0 2.0 3.0 4.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 100us 100 TJ = 150 ° C 5.0 1ms 10ms 10 TC = 25 ° C TJ = 150 ° C Single Pulse 1 1 10 100 1000 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHNA9064, IRHNA93064 Devices Pre-Irradiation 50 RD VDS VGS -ID , Drain Current (A) 40 D.U.T. RG + 30 VDD -12V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 td(on) tr t d(off) tf VGS 0 10% 25 50 75 100 125 150 TC , Case Temperature ( °C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNA9064, IRHNA93064 Devices L VDS D.U.T RG IAS -12V -20V tp VDD A DRIVER 0.01Ω EAS , Single Pulse Avalanche Energy (mJ) 1400 ID -21A -30A BOTTOM -48A TOP 1200 1000 15V Fig 12a. Unclamped Inductive Test Circuit I AS 800 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG -12V 12V .2µF .3µF -12V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHNA9064, IRHNA93064 Devices Pre-Irradiation " Repetitive Rating; Pulse width limited by ( Total Dose Irradiation with VGS Bias. maximum junction temperature. Refer to current HEXFET reliability report. # @ VDD = -25V, Starting TJ = 25°C, EAS = [0.5 * L * (IL2)] Peak IL = -48A, VGS = -12V, 25 ≤ RG ≤ 200Ω $ ISD ≤ -48A, di/dt ≤ 150A/µs, VDD ≤ BVDSS, TJ ≤ 150°C Suggested RG = 2.35Ω % Pulse width ≤ 300 µs; Duty Cycle ≤ 2% -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ) Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-irradiation) applied and VGS = 0 during irradiation per MlL-STD -750, method 1019, condition A. ' This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. * All Pre-Irradiation and Post-Irradiation test conditions are identical to facilitate direct comparison for circuit applications. Case Outline and Dimensions — SMD-2 SMD-2 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice 8/98 8 www.irf.com