PD - 91701B IRHNA7Z60 IRHNA8Z60 REPETITIVE AVALANCHE AND dv/dt RATED ® HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD W , RAD HARD HEXFET 30 Volt, 0.009W International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the wellestablished advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Product Summary Part Number IRHNA7Z60 BVDSS 30V RDS(on) 0.009W ID 75*A IRHNA8Z60 30V 0.009W 75*A Features: n n n n n n n n n n n n n Radiation Hardened up to 1 x 106 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount LightWeight Pre-Irradiation Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG www.irf.com Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting surface Temperature Weight IRHNA7Z60, IRHNA8Z60 75* 75* 300 300 2.4 ± 20 500 75 30 0.35 -55 to 150 Units A W W/°C V mJ A mJ V/ns o 300 (for 5 sec.) 3.3 (typical) C g 1 IRHNA7Z60, IRHNA8Z60 Devices Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Drain-to-Source Breakdown Voltage DBVDSS/DTJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units Test Conditions 30 — — V VGS = 0V, ID = 1.0mA — 0.023 — V/°C Reference to 25°C, ID = 1.0mA — — 0.009 2.0 31 — — — — — — 4.0 — 25 250 VGS = 12V, ID =75A V S( ) W Parameter BVDSS mA IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance — — — — — — — — — — — — — — — — — — — 0.8 100 -100 421 104 74 32 370 150 280 — LS Internal Source Inductance — 2.8 — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 7000 4800 1800 — — — nA nC ns nH pF VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 75A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 75A VDS = Max Rating x 0.5 VDD = 15V, ID = 75A, RG = 2.35W Measured from drain lead, 6mm (0.25 in) from package to center of die. Measured from source lead, 6mm (0.25 in) from package to source bonding pad. Modified MOSFET symbol showing the internal inductances. VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) — — — — 75* 300 A VSD trr QRR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — 1.8 245 1.1 V ns mC ton Forward Turn-On Time Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25°C, IS = 75A, VGS = 0V Tj = 25°C, IF = 75A, di/dt £ 100A/ms VDD £ 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max — — — 1.6 0.42 — Units °C/W Test Conditions Soldered to a 1 inch square clad PC board * Current is limited by internal wire diameter ( Die current is 75A , see page 6 ) 2 www.irf.com Radiation Characteristics IRHNA7Z60, IRHNA8Z60 Devices Radiation Performance of Rad Hard HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier comprises three radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MIL-STD-750, test method 1019 condition A. International Rectifier has imposed a standard gate condition of 12 volts per note 5 and a VDS bias condition equal to 80% of the device rated voltage per note 6. Pre- and post- irradiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHNA7Z60. Post-irradiation limits of the devices irradiated to1 x106 Rads (Si) are presented in Table 1, column 2, Table 1. Low Dose Rate VSD International Rectifier radiation hardened HEXFETs have been characterized in heavy ion Single Event Effects (SEE) environments. Single Event Effects characterization is shown in Table 3. Test Conditions 100K Rads (Si) 1000K Rads (Si) Units Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage Table 2. High Dose Rate High dose rate testing may be done on a special request basis using a dose rate up to 1 x 1012 Rads (Si)/ Sec (See Table 2). IRHNA7Z60 IRHNA8Z60 Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 IRHNA8Z60. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Min Max Min Max 30 2.0 — — — — — 4.0 100 -100 25 .009 30 1.25 — — — — — 4.5 100 -100 50 .03 nA µA W VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=0.8 x Max Rating, VGS =0V VGS = 12V, ID =15A — 1.8 — 1.8 V TC = 25°C, IS = 15A,VGS = 0V V 1011 Rads (Si)/sec 1012 Rads (Si)/sec Parameter VDSS Drain-to-Source Voltage IPP di/dt L1 Min Typ Max Min Typ Max Units Test Conditions — — 24 — — 24 V Applied drain-to-source voltage during gamma-dot — 140 — — 140 — A Peak radiation induced photo-current — 800 — — 160 — A/µsec Rate of rise of photo-current 0.1 — — 0.8 — — µH Circuit inductance required to limit di/dt Table 3. Single Event Effects Ion LET (Si) (MeV/mg/cm2) Fluence (ions/cm2) Cu 28 3x 105 www.irf.com Range (µm) 43 VDSBias (V) 26 VGS Bias (V) -5 3 IRHNA7Z60, IRHNA8Z60 Devices 1000 Pre-Irradiation 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 100 100 5.0V 5.0V 20µs PULSE WIDTH TJ = 25 °C 10 0.1 1 10 100 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 150 ° C 100 V DS = 15V 20µs PULSE WIDTH 6 7 8 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10 100 Fig 2. Typical Output Characteristics 1000 5 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 20µs PULSE WIDTH TJ = 150 °C 10 0.1 VDS , Drain-to-Source Voltage (V) 4 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 12 ID = 75A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation IRHNA7Z60, IRHNA8Z60 Devices VGS = Ciss = C = Coss Crss = oss C, Capacitance (pF) 12000 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd Ciss 9000 6000 Crss 3000 20 VGS , Gate-to-Source Voltage (V) 15000 0 ID = 75A VDS = 24V VDS = 15V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 100 0 VDS , Drain-to-Source Voltage (V) 200 300 400 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 25 ° C 100 I D , Drain Current (A) ISD , Reverse Drain Current (A) 100 QG , Total Gate Charge (nC) TJ = 150 ° C 100us 100 10 1 0.0 V GS = 0 V 1.0 2.0 3.0 4.0 5.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 1ms 10 6.0 10ms TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHNA7Z60, IRHNA8Z60 Devices Pre-Irradiation 160 LIMITED BY PACKAGE VGS D.U.T. RG 120 I D , Drain Current (A) RD VDS + -VDD 12V Pulse Width £ 1 µs Duty Factor £ 0.1 % 80 Fig 10a. Switching Time Test Circuit 40 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.01 0.001 0.00001 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNA7Z60, IRHNA8Z60 Devices 1 5V EAS , Single Pulse Avalanche Energy (mJ) 1500 TOP 1200 L VD S D .U .T RG IA S 12V 20V D R IVE R + - VD D 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit A BOTTOM 900 600 300 0 25 V (B R )D S S ID 34A 47A 75A 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHNA7Z60, IRHNA8Z60 Devices Pre-Irradiation Repetitive Rating; Pulse width limited by Total Dose Irradiation with VGS Bias. maximum junction temperature. Refer to current HEXFET reliability report. VDD = 25V, starting TJ = 25°C, EAS = [0.5 * L * (IL2)] Peak IL = 75A, VGS = 12V ISD £ 75A, di/dt £ 94A/ms, VDD £ BVDSS, TJ £ 150°C Suggested RG = 0 W Pulse width £ 300 ms; Duty Cycle £ 2% 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-irradiation) applied and VGS = 0 during irradiation per MlL-STD -750, method 1019, condition A. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. All Pre-Irradiation and Post-Irradiation test conditions are identical to facilitate direct comparison for circuit applications. Case Outline and Dimensions — SMD-2 SMD-2 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 8/98 8 www.irf.com