Bulletin I2198 rev. A 09/05
SAFEIR Series
12TTS08PbF
PHASE CONTROL SCR
Lead-Free ("PbF" suffix)
VT
< 1.2V @ 8A
ITSM = 140A
Description/ Features
The 12TTS08... SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has
reliable operation up to 125° C junction temperature.
VRRM = 800V
Typical applications are in input rectification and
crow-bar (soft start) and these products are designed to be used with International Rectifier input
diodes, switches and output rectifiers which are
available in identical package outlines.
Output Current in Typical Applications
Applications
Single-phase Bridge
Three-phase Bridge
Units
13.5
17
A
Capacitive input filter TA = 55°C, TJ = 125°C,
common heatsink of 1°C/W
Major Ratings and Characteristics
Characteristics
Package Outline
Values
Units
8
A
IT(RMS)
12.5
A
VRRM/ VDRM
800
V
ITSM
140
A
1.2
V
dv/dt
150
V/µs
di/dt
100
A/µs
- 40 to 125
°C
IT(AV)
Sinusoidal
waveform
VT
TJ
@ 8 A, TJ = 25°C
range
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TO-220
1
12TTS08PbF SAFEIR Series
Bulletin I2198 rev. A 09/05
Voltage Ratings
VDRM , maximum
peak direct voltage
IRRM/IDRM
125°C
V
V
mA
800
800
1.0
Part Number
VRRM, maximum
peak reverse voltage
12TTS08PbF
Absolute Maximum Ratings
Parameters
IT(AV) Max. Average On-state Current
IT(RMS) Max. RMS On-state Current
ITSM
I2t
Values
Units
8
A
12.5
Max. Peak One Cycle Non-Repetitive
120
Surge Current
140
Max. I2t for fusing
72
A
2
10ms Sine pulse, rated VRRM applied, TJ = 125°C
10ms Sine pulse, no voltage reapplied, TJ = 125°C
A2s
100
2
Conditions
@ TC = 108° C, 180° conduction half sine wave
10ms Sine pulse, rated VRRM applied, TJ = 125°C
10ms Sine pulse, no voltage reapplied, TJ = 125°C
2
t = 0.1 to 10ms, no voltage reapplied, TJ = 125°C
@ 8A, TJ = 25°C
I √t
Max. I √t for fusing
1000
A √s
VTM
Max. On-state Voltage Drop
1.2
V
rt
On-state slope resistance
16.2
mΩ
VT(TO) Threshold Voltage
0.87
V
IRM/IDM Max.Reverse and Direct
0.05
mA
Leakage Current
1.0
IH
Typ. Holding Current
30
mA
Anode Supply = 6V, Resistive load, Initial IT=1A
IL
Max. Latching Current
50
mA
Anode Supply = 6V, Resistive load
dv/dt Max. rate of rise of off-state Voltage
150
V/µs
TJ = 25°C
di/dt
100
A/µs
2
Max. rate of rise of turned-on Current
TJ = 125°C
TJ = 25 °C
TJ = 125 °C
VR = rated VRRM/ VDRM
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12TTS08PbF SAFEIR Series
Bulletin I2198 rev. A 09/05
Triggering
Parameters
PGM
Max. peak Gate Power
Values
Units
8.0
W
Conditions
PG(AV) Max. average Gate Power
2.0
+ IGM Max. paek positive Gate Current
1.5
A
- VGM Max. paek negative Gate Voltage
10
V
IGT
Max. required DC Gate Current
20
mA
to trigger
15
Anode supply = 6V, resistive load, TJ = 25°C
10
Anode supply = 6V, resistive load, TJ = 125°C
VGT
Max. required DC Gate Voltage
1.2
to trigger
V
Anode supply = 6V, resistive load, TJ = - 65°C
Anode supply = 6V, resistive load, TJ = - 65°C
1
Anode supply = 6V, resistive load, TJ = 25°C
0.7
Anode supply = 6V, resistive load, TJ = 125°C
VGD
Max. DC Gate Voltage not to trigger
0.2
IGD
Max. DC Gate Current not to trigger
0.1
mA
Values
Units
0.8
µs
TJ = 125°C, VDRM = rated value
TJ = 125°C, VDRM = rated value
Switching
Parameters
tgt
Typical turn-on time
trr
Typical reverse recovery time
tq
Typical turn-off time
3
Conditions
TJ = 25°C
TJ = 125°C
100
Thermal-Mechanical Specifications
Parameters
Values
Units
°C
TJ
Max. Junction Temperature Range
- 40 to 125
Tstg
Max. Storage Temperature Range
- 40 to 125
RthJC Max. Thermal Resistance Junction
1.5
°C/W
Conditions
DC operation
to Case
RthJA Max. Thermal Resistance Junction
62
to Ambient
RthCS Typ. Thermal Resistance Case
to Heatsink
wt
Approximate Weight
T
Mounting Torque
Case Style
Marking Device
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0.5
Mounting surface, smooth and greased
2 (0.07)
g (oz.)
Min.
6 (5)
Max.
12 (10)
Kg-cm
(Ibf-in)
TO-220
12TTS08
Case style TO-220
3
12TTS08PbF SAFEIR Series
12TTS08
R thJC (DC) = 1.5 K/ W
120
115
Conduc tion Angle
110
30°
105
60°
90°
120°
100
0
2
4
6
180°
8
10
120
115
Conduction Period
110
30°
60°
90°
120°
105
180°
100
0
2
7
6
RMSLimit
4
Conduction Angle
3
2
12TTS08
TJ= 125°C
1
1
2
3
4
5
6
7
8
9
Initial TJ= 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
100
90
80
12TTS08
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 6 - Maximum Non-Repetitive Surge Current
4
12
14
DC
180°
120°
90°
60°
30°
12
10
8
RMS Limit
6
4
Conduction Period
2
12TTS08
TJ = 125°C
0
0
2
4
6
8
10
12
14
Fig. 4 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
110
60
10
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
70
8
14
Average On-state Current (A)
120
6
Fig. 2 - Current Rating Characteristics
8
130
4
DC
Fig. 1 - Current Rating Characteristics
180°
120°
90°
60°
30°
0
12TTS08
R thJC(DC) = 1.5 K/ W
Average On-state Current (A)
9
0
125
Average On-state Current (A)
10
5
Maximum Allowable Case Temperature (°C)
125
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Bulletin I2198 rev. A 09/05
150
140
130
120
110
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ= 125°C
No Voltage Reapplied
Rated VRRM Reapplied
100
90
80
70
60
50
0.01
12TTS08
0.1
1
Pulse Train Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
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12TTS08PbF SAFEIR Series
Bulletin I2198 rev. A 09/05
Instantaneous On-state Current (A)
1000
12TTS08
100
TJ= 25°C
10
TJ= 125°C
1
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJC (°C/W)
Fig. 7 - On-state Voltage Drop Characteristics
10
Steady State Value
(DC Operation)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single Pulse
12TTS08
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
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5
12TTS08PbF SAFEIR Series
Bulletin I2198 rev. A 09/05
Outline Table
10.54 (0.41)
MAX.
3.78 (0.15)
3.54 (0.14)
1.32 (0.05)
2.92 (0.11)
2.54 (0.10)
TERM 2
15.24 (0.60)
14.84 (0.58)
1.22 (0.05)
DIA.
6.48 (0.25)
6.23 (0.24)
1 2 3
14.09 (0.55)
3.96 (0.16)
13.47 (0.53)
3.55 (0.14)
2°
0.10 (0.004)
2.04 (0.080) MAX.
1.40 (0.05)
2.89 (0.11)
1.15 (0.04)
2.64 (0.10)
0.94 (0.04)
0.69 (0.03)
1 2 3
0.61 (0.02) MAX.
4.57 (0.18)
4.32 (0.17)
5.08 (0.20) REF.
Conform to JEDEC outline TO-220AB
Dimensions in millimeters and (inches)
Part Marking Information
IRMX Assembly Line
EXAMPLE: THIS IS A 12TTS08
LOT CODE 1789
ASSEMBLED ON WW 19, 2001
6
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
DATE CODE
YEAR 1 = 2001
WEEK 19
P = LEAD-FREE
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12TTS08PbF SAFEIR Series
Bulletin I2198 rev. A 09/05
Ordering Information Table
Device Code
12
T
T
S
08
PbF
1
2
3
4
5
6
1
-
Current Rating (12 = 12.5A)
2
-
Circuit Configuration
3
-
4
-
Type of Silicon
5
-
Voltage Rating (08 = 800V)
6
-
y none = Standard Production
2
(A)
1 (K) (G) 3
T = Single Thyristor
Package
T = TO-220
S = Standard Recovery Rectifier
y PbF = Lead-Free
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 09/05
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7