IRF IRL3103D2

PD 9.1660
IRL3103D2
PRELIMINARY
FETKYTM MOSFET & SCHOTTKY RECTIFIER
l
l
l
l
l
Copackaged HEXFET® Power MOSFET
and Schottky Diode
Generation 5 Technology
Logic Level Gate Drive
Minimize Circuit Inductance
Ideal For Synchronous Regulator Application
D
VDSS = 30V
RDS(on) = 0.014Ω
G
ID = 54A
S
Description
The FETKY family of copackaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5
MOSFET with a low forward voltage drop Schottky
diode and minimized component interconnect
inductance and resistance result in maximized
converter efficiencies.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
54
34
220
2.0
70
0.56
± 16
-55 to + 150
Units
A
W
W
W/°C
V
300 (1.6mm from case )
10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
1.8
62
°C/W
7/16/97
IRL3103D2
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
30
–––
–––
–––
1.0
23
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
–––
–––
–––
–––
V(BR)DSS
IGSS
Typ. Max. Units
Conditions
––– –––
V
V GS = 0V, ID = 250µA
0.037 ––– V/°C Reference to 25°C, ID = 1mAƒ
––– 0.014
VGS = 10V, ID = 32A ‚
Ω
––– 0.019
VGS = 4.5V, ID = 27A ‚
––– –––
V
VDS = V GS, ID = 250µA
––– –––
S
V DS = 25V, ID = 34Aƒ
––– 0.25
VDS = 30V, VGS = 0V
mA
––– 35
VDS = 24V, VGS = 0V, TJ = 125°C
––– 100
VGS = 16V
nA
––– -100
VGS = -16V
––– 44
ID = 32A
––– 14
nC
VDS = 24V
––– 24
VGS = 4.5V, See Fig. 6 ‚
9.0 –––
VDD = 15V
210 –––
ID = 34A
ns
20 –––
RG = 3.4Ω, VGS =4.5V
54 –––
R D = 0.43 Ω, ‚ƒ
Between lead,
–––
4.5
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
2300 –––
VGS = 0V
1100 –––
VDS = 25V
pF
310 –––
ƒ = 1.0MHz, See Fig. 5
3500 –––
VGS = 0V, VDS = 0V
D
S
Body Diode & Schottky Diode Ratings and Characteristics
Parameter
IF (AV)
( Schottky)
ISM
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
VSD1
VSD2
trr
Qrr
ton
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
ƒ Uses IRL3103 data and test conditions
Min. Typ. Max. Units
Conditions
MOSFET symbol
5.0
––– –––
showing the
A
integral reverse
––– ––– 220
p-n junction and Schottky diode.
––– ––– 1.3
V
TJ = 25°C, IS = 32A, VGS = 0V ‚
––– ––– 0.6
V
TJ = 25°C, IS = 3.0A, VGS = 0V ‚
––– 51
77
ns
TJ = 25°C, IF = 32A
––– 47
71
nC
di/dt = 100A/µs ‚
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
G
S
IRL3103D2
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A )
TOP
100
10
2.5V
2 0µ s P U LS E W ID TH
T J = 2 5°C
1
0.1
1
10
100
10
2.5V
20µs PULSE WIDTH
T J = 150°C
1
A
100
0.1
1
V D S , D rain-to-S ource V oltage (V )
Fig 2. Typical Output Characteristics
30
IS, Source-to-Drain Current ( A )
IS, Source-to-Drain Current ( A )
30
20
VG S
10V
8.0V
6.0V
4.0V
2.0V
B O T T O M 0.0V
TOP
0.0V
20µ s P U LS E W ID TH
TC = 25°C
0
0.0
0.2
0.4
0.6
0.8
A
100
V D S , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
10
A
1.0
V D S , D rain-to-S ource V oltage (V)
Fig 3. Typical Reverse Output Characteristics
VG S
10V
8.0V
6.0V
4.0V
2.0V
B O T T O M 0.0V
TOP
20
0.0V
10
20µ s P U LS E W ID TH
TC = 150°C
0
0.0
0.2
0.4
0.6
A
0.8
V D S , D rain-to-S ource V oltage (V)
Fig 4. Typical Reverse Output Characteristics
IRL3103D2
V
C
C
C
4000
GS
iss
rs s
os s
=
=
=
=
15
0V ,
f = 1M H z
C g s + C g d , C d s SH O R T E D
C gd
C ds + C gd
VGS , Gate-to-Source Voltage (V)
C, Capacitance ( pF )
5000
3000
C iss
C oss
2000
1000
C rss
0
10
VDS = 24V
VDS = 15V
12
9
6
3
0
A
1
ID = 32A
0
100
20
60
80
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
I D , Drain-to-Source Current (A)
60
50
I D , Drain Current (A)
40
QG , Total Gate Charge (nC)
V D S , D rain-to-S o urce V oltage (V )
40
30
20
10
TJ = 25°C
100
T J = 150°C
10
V D S = 15V
20µs PULSE WIDTH
1
0
25
50
75
100
125
TC , Case Temperature ( ° C)
Fig 7. Maximum Drain Current Vs.
Case Temperature
150
2.0
3.0
4.0
5.0
6.0
7.0
8.0
V G S , Gate-to-Source Voltage (V)
Fig 8. Typical Transfer Characteristics
9.0
A
IRL3103D2
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID = 54A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 9. Normalized On-Resistance
Vs. Temperature
Th erm al R es pon se (Z th J C )
10
1
D = 0.50
0 .2 0
0 .1 0
0.1
PD M
0.0 5
t
0 .0 2
0 .0 1
t2
SING L E PU L SE
(TH ER M A L RE S PO N SE )
0.01
0.00001
1
N o te s:
1 . D u ty fa c to r D = t
1
/ t2
2 . P e a k TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
t 1 , R e ctan gular Pulse D uration (se c)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
1
IRL3103D2
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2.87 (.11 3)
2.62 (.10 3)
10 .54 (.4 15)
10 .29 (.4 05)
3 .7 8 (.149 )
3 .5 4 (.139 )
-A -
-B 4.69 ( .18 5 )
4.20 ( .16 5 )
1 .32 (.05 2)
1 .22 (.04 8)
6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5)
M IN
1
2
1 4.09 (.55 5)
1 3.47 (.53 0)
4.06 (.16 0)
3.55 (.14 0)
3X
3X
L E A D A S S IG NM E NT S
1 - GATE
2 - D R A IN
3 - S O U RC E
4 - D R A IN
3
1 .4 0 (.0 55 )
1 .1 5 (.0 45 )
0.93 (.03 7)
0.69 (.02 7)
0 .3 6 (.01 4)
3X
M
B A M
2.54 (.10 0)
0.55 (.02 2)
0.46 (.01 8)
2 .92 (.11 5)
2 .64 (.10 4)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82.
2 C O N TR O L LIN G D IM E N S IO N : IN C H
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
Part Marking Information
TO-220AB
: IS
TH IS A
ISN AIR
N F1
IR0F1
E X AEMXPA LMEP :L ETH
1 00 1 0
W ITWH ITAHS SAESMS BE LMYB L Y
C EO D9EB 19MB 1 M
L O TL OCTO D
A
INRTE
N A TIO
IN TE
N ARTIO
N A LN A L
E C IE
TIFR IE R
R E CRTIF
IR F IR
10F110
0 10
L O GL O G O
9 2 4962 4 6
9B 9B1 M 1 M
A S SAESMS BE LMYB L Y
C EO D E
L O TL O TC O D
A
NB
U EMRB E R
P A RPTA RNTU M
D A TE
C EO D E
D A TE
COD
(Y Y(Y
W YWW) W )
Y Y Y=Y Y=E AYRE A R
W WW W
= W= EW
E KE E K
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http://www.irf.com/
Data and specifications subject to change without notice.
6/97