IRF IRF9953

PD - 9.1560A
IRF9953
PRELIMINARY
HEXFET® Power MOSFET
l
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Very Low Gate Charge and
Switching Losses
Fully Avalanche Rated
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
S1
VDSS = -30V
RDS(on) = 0.25Ω
T op V iew
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
Recommended upgrade: IRF7306 or IRF7316
Lower profile/smaller equivalent: IRF7506
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
S O -8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current…
TA = 25°C
TA = 70°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA = 25°C
Maximum Power Dissipation …
TA = 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dtƒ
Junction and Storage Temperature Range
Symbol
Maximum
VDS
VGS
-30
± 20
-2.3
-1.8
-10
1.6
2.0
1.3
57
-1.3
0.20
-5.0
-55 to + 150
ID
IDM
IS
PD
EAS
IAR
EAR
dv/dt
TJ, TSTG
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient…
Symbol
Limit
Units
RθJA
62.5
°C/W
8/25/97
IRF9953
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
I GSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -250µA
0.015 ––– V/°C Reference to 25°C, ID = -1mA
0.165 0.250
VGS = 10V, ID = -1.0A „
Ω
0.290 0.400
VGS = 4.5V, ID = -0.50A „
––– –––
V
VDS = VGS, ID = -250µA
-2.4 –––
S
VDS = -15V, ID = -2.3A
––– -2.0
VDS = 24V, VGS = 0V
µA
––– -25
VDS = 24V, VGS = 0V, TJ = 55°C
––– 100
VGS = -20V
nA
––– -100
VGS = 20V
6.1
12
ID = -2.3A
1.7 3.4
nC
VDS = -10V
1.1 2.2
VGS = -10V, See Fig. 10 „
9.7
19
VDD = -10V
14
28
ID = -1.0A
ns
20
40
RG = 6.0Ω
6.9
14
RD = 10Ω „
190 –––
VGS = 0V
120 –––
pF
VDS = -15V
61 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
1.3
–––
–––
16
––– 0.82
––– 27
––– 31
1.2
54
62
A
V
ns
nC
Conditions
D
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, I S = -1.25A, VGS = 0V ƒ
TJ = 25°C, IF = -1.25A
di/dt = -100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 67mH
RG = 25Ω, IAS = -1.3A.
… Surface mounted on FR-4 board, t ≤ 10sec.
ƒ ISD ≤ -1.3A, di/dt ≤ -92A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRF9953
100
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
TOP
-I D , D ra in -to -S o u rc e C u rre n t (A )
-I D , D ra in -to -S o u rce C u rre n t (A )
TOP
10
1
-3.0 V
20 µs P U LSE W IDTH
TJ = 25 °C
A
0.1
0.1
1
10
1
-3 .0V
20 µs P U LSE W IDTH
TJ = 15 0°C
A
0.1
10
0.1
-VD S , D rain-to-S ource V oltage (V )
10
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
-I S D , R e ve rs e D ra in C u rre n t (A )
100
-I D , D rain -to- S our ce C urr ent ( A )
1
-VD S , D rain-to-S ource V oltage (V )
10
TJ = 2 5 ° C
T J = 1 5 0 °C
1
V DS = -1 0 V
2 0 µ s P U L S E W ID T H
0.1
3.0
4.0
5.0
6.0
7.0
-VG S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
8.0
A
10
T J = 1 50 °C
T J = 25 °C
1
VG S = 0 V
0.1
0.4
0.6
0.8
1.0
1.2
-VS D , Source-to-D rain V oltage (V )
Fig 4. Typical Source-Drain Diode
Forward Voltage
A
1.4
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
R DS(on) , Drain-to-Source On Resistance ( Ω )
IRF9953
ID = -1.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
2.5
2.0
1.5
V G S = -4.5V
1.0
0.5
V G S = -10V
0.0
A
0.0
1.0
TJ , Junction Temperature ( ° C)
3.0
0.60
0.40
I D = -2.3A
0.20
0.00
A
-V G S
6
9
12
, G ate -to-S ource V oltage ( V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
15
EAS , Single Pulse Avalanche Energy (mJ)
150
3
5.0
Fig 6. Typical On-Resistance Vs. Drain
Current
0.80
0
4.0
-I D , D rain C urrent (A )
Fig 5. Normalized On-Resistance
Vs. Temperature
R DS(on) , Drain-to-Source On Resistance ( Ω )
2.0
ID
-0.58A
-1.0A
BOTTOM -1.3A
TOP
120
90
60
30
0
25
50
75
100
125
Starting TJ , Junction Temperature ( ° C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
150
IRF9953
V GS
C iss
C rs s
C os s
=
=
=
=
20
0V ,
f = 1MH z
C gs + C g d , Cds S H OR TED
Cgd
C ds + C gd
300
C iss
C os s
200
C rs s
100
0
1
10
ID = -2.3A
VDS =-10V
-VGS , Gate-to-Source Voltage (V)
C , C a p a c ita n c e (p F )
400
100
A
16
12
8
4
0
0
2
4
6
8
10
Q G , Total Gate Charge (nC)
-VD S , Drain-to-Source V oltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
P DM
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + T A
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF9953
Package Outline
SO8 Outline
D IM
D
-B -
5
8
E
-A -
1
7
2
5
3
H
0.25 (.01 0)
4
e
6X
M
A M
θ
e1
K x 45°
θ
A
-C -
0.10 (.0 04)
A1
B 8X
0.25 ( .010)
M
L
8X
6
C
8X
C A S B S
M IL L IM E T E R S
MAX
M IN
M AX
A
.0 5 3 2
.0688
1 .3 5
1 .7 5
A1
.0 0 4 0
.0098
0 .1 0
0 .2 5
B
.0 1 4
.018
0 .3 6
0 .4 6
C
.0 0 7 5
.0 09 8
0 .1 9
0 .2 5
D
.1 8 9
.1 96
4 .8 0
4 .9 8
E
.1 5 0
.157
3 .8 1
3 .9 9
5
6
IN C H E S
M IN
e
.0 5 0 B A S IC
1 .2 7 B A S IC
e1
.0 2 5 B A S IC
0 .6 3 5 B A S IC
H
.2 2 8 4
.2 44 0
K
.0 1 1
.019
0 .2 8
5 .8 0
0 .4 8
6 .2 0
L
0 .1 6
.0 5 0
0 .4 1
1 .2 7
θ
0°
8°
0°
8°
RE CO MM EN DE D F O O T PR INT
N OT E S :
1. D IME NS IO NING AND T O LE RA NCING PE R A NS I Y 14.5M- 1982.
2. C O NT RO LLING D IME NS IO N : IN CH.
3. D IME NS IO NS A RE S HO W N IN M ILLIME T ER S (INC HE S) .
4. O U TLIN E CO NF O RM S T O JE DE C O U TLINE MS -01 2AA .
5 DIM ENS IO N DO ES NO T INCLU DE M OL D P RO T RUS IO NS
MO LD PR O TRU SIO NS NO T T O E XCEE D 0.25 (.006).
6 DIM ENS IO NS IS T H E LE NG T H O F LE AD F O R SO LDE RIN G T O A S UB ST RA T E..
0.72 (.028 )
8X
6.46 ( .255 )
1.78 (.07 0)
8X
1.27 ( .0 50 )
3X
Part Marking Information
SO8
E X A M P LE : TH IS IS A N IR F 7 101
3 12
IN T E R N A TI ON A L
R E C T IF IE R
LO G O
D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W EEK
XX X X
F 7 101
T OP
PART NUMBER
W AFER
LO T C O D E
(LA S T 4 D IG IT S )
B O T TO M
IRF9953
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
T E R M IN A L N U M BE R 1
1 2. 3 ( .48 4 )
1 1. 7 ( .46 1 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
F E E D D IR E C T IO N
N O TE S :
1 . CO NTR O LL IN G DIM EN S IO N : M ILL IM E TE R.
2 . A LL D IM E NS IO NS AR E S HO W N IN M ILL IM E TE R S( IN CH ES ) .
3 . O U TLINE C O N FO RM S TO E IA -4 81 & E IA - 54 1.
3 30 .00
(12 .9 92 )
MAX.
1 4.4 0 ( .5 66 )
1 2.4 0 ( .4 88 )
N O T ES :
1. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T LIN E C O N F O R M S T O E IA -48 1 & EIA -5 41 .
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Data and specifications subject to change without notice.
8/97