PD - 91265H
IRF7501
PRELIMINARY
HEXFET® Power MOSFET
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Generation V Technology
Ulrtra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
S1
G2
VDSS =20V
RDS(on) = 0.135Ω
T o p V ie w
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is
at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable electronics and
PCMCIA cards.
M icro 8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGSM
VGS
dv/dt
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage Single Pulse tp<10µs
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
20
2.4
1.9
19
1.25
0.8
0.01
16
± 12
5.0
-55 to + 150
240 (1.6mm from case)
Units
V
A
W
W
W/°C
V
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
Max.
Units
100
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
www.irf.com
1
4/30/98
IRF7501
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
0.70
2.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = 250µA
0.041 ––– V/°C Reference to 25°C, ID = 1mA
0.085 0.135
VGS = 4.5V, ID = 1.7A
Ω
0.120 0.20
VGS = 2.7V, ID = 0.85A
––– –––
V
VDS = VGS, ID = 250µA
––– –––
S
VDS = 10V, ID = 0.85A
––– 1.0
VDS = 16V, VGS = 0V
µA
––– 25
VDS = 16V, VGS = 0V, TJ = 125°C
––– 100
VGS = 12V
nA
––– -100
VGS = -12V
5.3 8.0
ID = 1.7A
0.84 1.3
nC VDS = 16V
2.2 3.3
VGS = 4.5V, See Fig. 9
5.7 –––
VDD = 10V
24 –––
ID = 1.7A
ns
15 –––
RG = 6.0Ω
16 –––
RD = 5.7Ω
260 –––
VGS = 0V
130 –––
pF
VDS = 15V
61 –––
ƒ = 1.0MHz, See Fig. 8
Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
1.25
–––
–––
19
–––
–––
–––
–––
39
37
1.2
59
56
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IF = 1.7A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%
max. junction temperature. ( See fig. 10 )
ISD ≤ 1.7A, di/dt ≤ 66A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
2
Surface mounted on FR-4 board, t ≤10sec
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IRF7501
100
100
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
1
0.1
1.5V
20µ s P U LS E W ID TH
TJ = 25°C
A
0.01
0.1
1
I , D rain-to-S ource C urrent (A )
D
I , D rain-to-S ource C urrent (A )
D
10
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
TOP
TOP
10
1
1.5V
0.1
20µ s P U LS E W ID TH
TJ = 150°C
A
0.01
0.1
10
10
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
I S D , R everse D rain C urrent (A )
100
I D , D ra in -to-S o urc e C urren t (A )
1
V D S , D rain-to-S ource V oltage (V )
V D S , D rain-to-Source V oltage (V)
10
T J = 1 5 0 °C
T J = 2 5 °C
1
VDS = 10V
2 0 µ s P U L S E W ID T H
0.1
1.5
2.0
2.5
3.0
3.5
4.0
V G S , G a te -to -S o u rc e V o lta g e (V )
Fig 3. Typical Transfer Characteristics
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A
10
T J = 150°C
T J = 25°C
1
0.1
0.4
V G S = 0V
0.6
0.8
1.0
1.2
1.4
1.6
A
1.8
V S D , S ource-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
3
IRF7501
I D = 1.7A
RDS(on), Drain-to-Source On Resistance ( Ω )
R D S (on ) , D rain-to -S ource O n R esistance
(N orm alized)
2.0
1.5
1.0
0.5
V G S = 4.5 V
0.0
-60
-40
-20
0
20
40
60
80
100 120 140 160
0.8
0.6
0.4
V
GS
0.2
V G S = 5 .0 V
0.0
A
0
2
T J , Junction T em perature (°C )
4
6
I D , D rain C urrent (A )
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 5. Normalized On-Resistance
Vs. Temperature
R D S (o n ) , D ra in-to -S o urc e O n R esistan ce ( Ω ) (Ω
= 2.5 V
0.13
0.11
0.09
I D = 2.4 A
0.07
0.05
2
3
4
5
6
7
8
A
V G S , G ate -to-S o urc e V olta ge (V )
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
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A
IRF7501
V GS
C is s
C rs s
C oss
C , C apacitanc e (pF )
400
=
=
=
=
10
0V ,
f = 1M H z
C gs + C gd , Cds S H O R TE D
C gd
C ds + C gd
-V G S , G ate-to -S ource V oltage (V )
500
C iss
300
C oss
200
C rs s
100
0
A
1
10
100
I D = 1.7A
V D S = 16V
8
6
4
2
FO R TE S T C IR C U IT
S E E FIG U R E 9
0
0
V D S , D rain-to -S ource V oltage (V )
2
4
6
8
A
10
Q G , Total G ate C harge (nC )
Fig 9. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Typical Capacitance Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
10
0.10
0.05
P DM
0.02
0.01
t1
1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7501
Micro8 Package Outline
L E A D A S S IG N M E N T S
IN C H E S
D IM
D
M IL L IM E T E R S
M IN
MAX
M IN
M AX
A
.0 3 6
.0 4 4
0 .9 1
1 .1 1
A1
.0 0 4
.0 0 8
0 .1 0
0 .2 0
B
.0 1 0
.0 1 4
0 .2 5
0 .3 6
C
.0 0 5
.0 0 7
0 .1 3
0 .1 8
D
.1 1 6
.1 2 0
2 .9 5
3 .0 5
e
.0 2 5 6 B A SIC
0 .6 5 BA S IC
e1
.0 1 2 8 B A SIC
0 .3 3 BA S IC
E
.1 1 6
.1 2 0
2 .9 5
3 .0 5
H
.1 8 8
.1 9 8
4 .7 8
5 .0 3
e
L
.0 1 6
.0 2 6
0 .4 1
0 .6 6
6X
θ
0°
6°
0°
6°
3
-B-
D D D D
D1 D1 D2 D2
8 7 6 5
8 7 6 5
S IN G LE
D U AL
8 7 6 5
3
H
E
0.2 5 (.0 1 0)
-A -
M
A
M
1 2 3 4
1 2 3 4
S S S G
S1 G 1 S2 G 2
1 2 3 4
e 1
R E C O M M E N D E D F O O T P R IN T
θ
1 .04
( .0 4 1 )
8X
A
-C B
0 .10 ( .00 4)
A 1
8X
0.0 8 (.0 0 3)
M
C A S
L
8X
B S
0 .3 8
8X
( .0 1 5 )
C
8X
3 .2 0
( .1 2 6 )
4.24
5 .2 8
( .1 6 7 ) ( .2 08 )
NOTES:
1 D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S D O N O T IN C L U D E M O L D F L A S H .
0 .65 6X
( .02 56 )
Part Marking Information
IRF7501 example
6
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IRF7501
Tape & Reel
Dimensions are shown in millimeters (inches)
T E R M IN A L N U M B E R 1
1 2 .3 ( .48 4 )
1 1 .7 ( .46 1 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
F E E D D IR E C T IO N
NOTES:
1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
3 3 0 .0 0
(12 .9 9 2 )
MAX.
1 4 .4 0 ( .5 66 )
1 2 .4 0 ( .4 88 )
NO TES :
1. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R .
2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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Data and specifications subject to change without notice.
4/98
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