PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Rev. 02 — 27 June 2005 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5160DS. 1.2 Features ■ ■ ■ ■ ■ Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications ■ Dual low power switches (e.g. motors, fans) ■ Automotive applications 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions VCEO collector-emitter voltage open base [1] IC collector current (DC) ICM peak collector current single pulse; tp ≤ 1 ms RCEsat collector-emitter saturation resistance IC = 1 A; IB = 100 mA [2] Min Typ Max Unit - - 60 V - - 1 A - - 2 A - 200 250 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PBSS4160DS Philips Semiconductors 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 2. Pinning information Table 2: Pinning Pin Description 1 emitter TR1 2 base TR 1 3 collector TR2 4 emitter TR2 5 base TR2 6 collector TR1 Simplified outline 6 5 4 1 2 3 Symbol 6 5 4 TR2 TR1 1 2 3 sym020 3. Ordering information Table 3: Ordering information Type number PBSS4160DS Package Name Description Version SC-74 plastic surface mounted package; 6 leads SOT457 4. Marking Table 4: Marking codes Type number Marking code PBSS4160DS B8 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor VCBO collector-base voltage open emitter - 80 V VCEO collector-emitter voltage open base - 60 V VEBO emitter-base voltage open collector IC collector current (DC) 5 V - 870 mA [2] - 1 A [3] - 1 A - 2 A - 300 mA single pulse; tp ≤ 1 ms ICM peak collector current IB base current (DC) IBM peak base current single pulse; tp ≤ 1 ms Ptot total power dissipation Tamb ≤ 25 °C PBSS4160DS_2 Product data sheet [1] - 1 A [1] - 290 mW [2] - 370 mW [3] - 450 W © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 27 June 2005 2 of 14 PBSS4160DS Philips Semiconductors 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Table 5: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit [1] - 420 mW [2] - 560 mW [3] - 700 W Per device total power dissipation Ptot Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa493 0.8 (1) Ptot (W) 0.6 (2) (3) 0.4 0.2 0 0 40 80 120 160 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves PBSS4160DS_2 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 27 June 2005 3 of 14 PBSS4160DS Philips Semiconductors 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Rth(j-a) Rth(j-sp) Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - - 431 K/W [2] - - 338 K/W [3] - - 278 K/W - - 105 K/W thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa494 103 δ=1 Zth(j-a) (K/W) 0.75 0.50 0.33 102 0.20 0.10 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values PBSS4160DS_2 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 27 June 2005 4 of 14 PBSS4160DS Philips Semiconductors 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 006aaa495 103 δ=1 Zth(j-a) (K/W) 0.75 0.50 102 0.20 0.33 0.10 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa496 103 Zth(j-a) (K/W) δ=1 0.75 102 0.50 0.20 0.33 0.10 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values PBSS4160DS_2 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 27 June 2005 5 of 14 PBSS4160DS Philips Semiconductors 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 60 V; IE = 0 A - - 100 nA VCB = 60 V; IE = 0 A; Tj = 150 °C - - 50 µA VCE = 60 V; VBE = 0 V - - 100 nA nA ICES collector-emitter cut-off current IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 hFE DC current gain 250 500 - VCEsat collector-emitter saturation voltage VCE = 5 V; IC = 1 mA VCE = 5 V; IC = 500 mA [1] 200 420 - VCE = 5 V; IC = 1 A [1] 100 180 - IC = 100 mA; IB = 1 mA - 90 110 mV IC = 500 mA; IB = 50 mA - 115 140 mV IC = 1 A; IB = 100 mA [1] - 200 250 mV - 200 250 mΩ RCEsat collector-emitter saturation resistance IC = 1 A; IB = 100 mA [1] VBEsat base-emitter saturation voltage IC = 1 A; IB = 50 mA [1] - 0.95 1.1 V VBEon base-emitter turn-on voltage VCE = 5 V; IC = 1 A [1] - 0.82 0.9 V td delay time - 11 - ns tr rise time - 78 - ns ton turn-on time IC = 0.5 A; IBon = 25 mA; IBoff = −25 mA - 90 - ns ts storage time - 340 - ns tf fall time - 160 - ns toff turn-off time - 500 - ns fT transition frequency VCE = 10 V; IC = 50 mA; f = 100 MHz 150 220 - MHz Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - 5.5 10 pF [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PBSS4160DS_2 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 27 June 2005 6 of 14 PBSS4160DS Philips Semiconductors 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 006aaa505 800 hFE 006aaa506 1.2 VBE (V) (1) 1.0 600 (2) 0.8 (1) 400 (2) 0.6 (3) 200 (3) 0.4 0 10−1 1 102 10 103 104 IC (mA) 0.2 10−1 1 10 VCE = 5 V VCE = 5 V (1) Tamb = 100 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 100 °C Fig 5. DC current gain as a function of collector current; typical values 006aaa513 1 102 103 104 IC (mA) Fig 6. Base-emitter voltage as a function of collector current; typical values 006aaa514 1 VCEsat (V) VCEsat (mV) 10−1 (1) (2) 10−1 (1) (2) (3) 10−2 10−1 1 10 (3) 10−2 102 103 104 IC (mA) 10−3 10−1 1 102 103 104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values PBSS4160DS_2 Product data sheet 10 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 27 June 2005 7 of 14 PBSS4160DS Philips Semiconductors 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 006aaa509 1.2 VBEsat (V) 006aaa515 103 RCEsat (Ω) 1.0 102 (1) 0.8 10 (2) 0.6 (3) (1) (2) (3) 1 0.4 0.2 10−1 1 10 102 103 104 IC (mA) IC/IB = 20 10−1 10−1 1 10 102 103 104 IC (mA) IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = −55 °C Fig 9. Base-emitter saturation voltage as a function of collector current; typical values 006aaa511 2.0 IB (mA) = 65.0 58.5 52.0 45.5 39.0 32.5 IC (A) 1.6 26.0 1.2 Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values 006aaa516 103 RCEsat (Ω) 102 19.5 13.0 10 6.5 0.8 (1) 1 (2) 0.4 (3) 0 0 1 2 3 4 5 10−1 10−1 1 VCE (V) Tamb = 25 °C 10 102 103 104 IC (mA) Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 11. Collector current as a function of collector-emitter voltage; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values PBSS4160DS_2 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 27 June 2005 8 of 14 PBSS4160DS Philips Semiconductors 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 8. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mlb826 IC = 0.5 A; IBon = 25 mA; IBoff = −25 mA; R1 = open; R2 = 100 Ω; RB = 300 Ω; RC = 20 Ω Fig 14. Test circuit for switching times PBSS4160DS_2 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 27 June 2005 9 of 14 PBSS4160DS Philips Semiconductors 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 9. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.40 0.25 0.95 0.26 0.10 1.9 Dimensions in mm 04-11-08 Fig 15. Package outline SOT457 (SC-74) 10. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PBSS4160DS Package SOT457 Description 3000 10000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, see Section 17. [2] T1: normal taping [3] T2: reverse taping PBSS4160DS_2 Product data sheet Packing quantity © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 27 June 2005 10 of 14 PBSS4160DS Philips Semiconductors 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11. Soldering 3.45 1.95 solder lands 0.95 solder resist 0.45 0.55 3.30 2.825 occupied area solder paste 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 16. Reflow soldering footprint 5.30 solder lands solder resist 5.05 0.45 1.45 4.45 occupied area solder paste MSC423 1.40 4.30 Dimensions in mm Fig 17. Wave soldering footprint PBSS4160DS_2 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 27 June 2005 11 of 14 PBSS4160DS Philips Semiconductors 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 12. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PBSS4160DS_2 20050627 Product data sheet - - PBSS4160DS_1 Modifications: PBSS4160DS_1 • • • • • • • Product status changed Table 7 “Characteristics”: Switching times parameters td, tr, ton, ts, tf, and toff added Figure 13 “BISS transistor switching time definition”: added Figure 14 “Test circuit for switching times”: added Section 10 “Packing information”: added Section 11 “Soldering”: added Section 16 “Trademarks”: added 20040426 Objective data sheet - PBSS4160DS_2 Product data sheet 9397 750 12703 - © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 27 June 2005 12 of 14 PBSS4160DS Philips Semiconductors 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 13. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 14. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 16. Trademarks 15. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 17. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] PBSS4160DS_2 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 27 June 2005 13 of 14 PBSS4160DS Philips Semiconductors 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 18. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information. . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 27 June 2005 Document number: PBSS4160DS_2 Published in The Netherlands