PBSS3515E 15 V, 0.5 A PNP low VCEsat (BISS) transistor Rev. 01 — 18 April 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2515E. 1.2 Features ■ ■ ■ ■ ■ Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications ■ ■ ■ ■ ■ ■ DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) Portable applications 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit open base - - −15 V - - −0.5 A - - −1 A - 300 500 mΩ VCEO collector-emitter voltage IC collector current (DC) ICM peak collector current single pulse; tp ≤ 1 ms RCEsat collector-emitter saturation resistance IC = −500 mA; IB = −50 mA [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [1] PBSS3515E Philips Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2: Pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Symbol 3 3 1 1 2 2 sym013 3. Ordering information Table 3: Ordering information Type number PBSS3515E Package Name Description Version SC-75 plastic surface mounted package; 3 leads SOT416 4. Marking Table 4: Marking codes Type number Marking code PBSS3515E 1R 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −15 V VCEO collector-emitter voltage open base - −15 V VEBO emitter-base voltage open collector - −6 V IC collector current (DC) - −0.5 A ICM peak collector current single pulse; tp ≤ 1 ms - −1 A IBM peak base current single pulse; tp ≤ 1 ms - −100 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 150 mW [2] - 250 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 9397 750 14878 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 2 of 11 PBSS3515E Philips Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 006aaa412 300 Ptot (mW) (1) 200 (2) 100 0 0 40 80 120 160 Tamb (°C) (1) FR4 PCB, mounting pad for collector 1 cm2 (2) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Rth(j-a) Conditions thermal resistance from junction to ambient in free air Typ Max Unit - - 833 K/W [2] - - 500 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 9397 750 14878 Product data sheet Min [1] © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 3 of 11 PBSS3515E Philips Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 006aaa413 103 duty cycle = 1 Zth(j-a) (K/W) 0.5 0.33 102 0.75 0.2 0.1 0.05 0.02 10 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 102 10 103 t p (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −15 V; IE = 0 A - - −100 nA VCB = −15 V; IE = 0 A; Tj = 150 °C - - −50 µA - - −100 nA 200 - - IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A hFE DC current gain VCE = −2 V; IC = −10 mA VCEsat collector-emitter saturation voltage VCE = −2 V; IC = −100 mA [1] 150 - - VCE = −2 V; IC = −500 mA [1] 90 - - - - −25 mV IC = −10 mA; IB = −0.5 mA IC = −200 mA; IB = −10 mA - - −150 mV IC = −500 mA; IB = −50 mA [1] - - −250 mV RCEsat collector-emitter saturation resistance IC = −500 mA; IB = −50 mA [1] - 300 500 mΩ VBEsat base-emitter saturation voltage IC = −500 mA; IB = −50 mA [1] - - −1.1 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −100 mA [1] - - −0.9 V fT transition frequency VCE = −5 V; IC = −100 mA; f = 100 MHz 100 280 - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - - 10 pF [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 9397 750 14878 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 4 of 11 PBSS3515E Philips Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 006aaa372 600 VBE (mV) (1) hFE 006aaa373 −1100 −900 (1) 400 −700 (2) (2) −500 (3) 200 (3) −300 0 −10−1 −1 −10 −102 −103 −100 −10−1 −1 −10 −102 −103 IC (mA) IC (mA) VCE = −2 V VCE = −2 V (1) Tamb = 100 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 100 °C Fig 3. DC current gain as a function of collector current; typical values 006aaa374 −1 VCEsat (mV) Fig 4. Base-emitter voltage as a function of collector current; typical values 006aaa375 −1 VCEsat (mV) −10−1 −10−1 (1) (2) (3) (1) (2) −10−2 −10−2 (3) −10−3 −10−1 −1 −10 −102 −103 −10−3 −10−1 −1 IC (mA) −102 −103 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values 9397 750 14878 Product data sheet −10 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 5 of 11 PBSS3515E Philips Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 006aaa376 −1.3 006aaa377 102 RCEsat (Ω) VBEsat (V) −0.9 10 (1) (2) (3) −0.5 (1) (2) (3) 1 −0.1 −10−1 −1 −10 −102 −103 10−1 −10−1 −1 −10 −102 IC (mA) IC/IB = 20 IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = −55 °C Fig 7. Base-emitter saturation voltage as a function of collector current; typical values 006aaa378 −1.2 IB = 10 mA 9 8 7 6 IC (A) −0.8 −103 IC (mA) Fig 8. Collector-emitter saturation resistance as a function of collector current; typical values 006aaa379 103 RCEsat (Ω) 102 5 (1) 4 10 3 (2) 2 −0.4 (3) 1 1 0 0 −1 −2 −3 −4 −5 VCE (V) Tamb = 25 °C 10−1 −10−1 −1 −10 −102 −103 IC (mA) Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 9. Collector current as a function of collector-emitter voltage; typical values Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values 9397 750 14878 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 6 of 11 PBSS3515E Philips Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 8. Package outline 0.95 0.60 1.8 1.4 3 0.45 0.15 1.75 0.9 1.45 0.7 1 2 0.30 0.15 0.25 0.10 1 Dimensions in mm 04-11-04 Fig 11. Package outline SOT416 (SC-75) 9. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PBSS3515E [1] Package SOT416 Description 4 mm pitch, 8 mm tape and reel 3000 10000 -115 -135 For further information and the availability of packing methods, see Section 15. 9397 750 14878 Product data sheet Packing quantity © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 7 of 11 PBSS3515E Philips Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 10. Soldering 2.20 0.60 1.10 0.70 solder lands 2 solder resist 3 2.00 0.85 1.50 1 occupied area 0.50 (3x) solder paste MSA438 0.60 (3x) 1.90 Dimensions in mm Fig 12. Reflow soldering footprint 3.80 3.30 0.70 solder lands solder resist 2.85 1.50 2.10 0.80 occupied area MSA418 preferred transport direction during soldering Dimensions in mm Fig 13. Wave soldering footprint 9397 750 14878 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 8 of 11 PBSS3515E Philips Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 11. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PBSS3515E_1 20050418 Product data sheet - 9397 750 14878 - 9397 750 14878 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 9 of 11 PBSS3515E Philips Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 12. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions 14. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14878 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 10 of 11 PBSS3515E Philips Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information . . . . . . . . . . . . . . . . . . . . 10 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 18 April 2005 Document number: 9397 750 14878 Published in The Netherlands