PBSS302PD 40 V PNP low VCEsat (BISS) transistor Rev. 01 — 18 April 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package. NPN complement: PBSS302ND 1.2 Features ■ ■ ■ ■ ■ Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current capability IC (DC) Up to 15 A peak current Very low collector-emitter saturation resistance High efficiency due to less heat generation 1.3 Applications ■ ■ ■ ■ ■ ■ Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −40 V IC collector current (DC) - - −4 A ICM peak collector current t = 1 ms or limited by Tj(max) - - −15 A RCEsat collector-emitter saturation resistance IC = −6 A; IB = −600 mA - 55 75 mΩ [1] [2] [1] Device mounted on a ceramic Printed-Circuit Board (PCB), AL2O3, standard footprint. [2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PBSS302PD Philips Semiconductors 40 V PNP low VCEsat (BISS) transistor 2. Pinning information Table 2: Pinning Pin Description 1 collector 2 collector 3 base 4 emitter 5 collector 6 collector Simplified outline 6 5 Symbol 1, 2, 5, 6 4 3 1 2 3 4 sym030 3. Ordering information Table 3: Ordering information Type number PBSS302PD Package Name Description Version SC-74 plastic surface mounted package; 6 leads SOT457 4. Marking Table 4: Marking codes Type number Marking code PBSS302PD C9 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −40 V VCEO collector-emitter voltage open base - −40 V VEBO emitter-base voltage open collector - −5 V - −4 A - −15 A - −0.8 A [1] IC collector current (DC) ICM peak collector current IB base current (DC) IBM peak base current tp ≤ 300 µs total power dissipation Tamb ≤ 25 °C Ptot t = 1 ms or limited by Tj(max) 9397 750 14513 Product data sheet - −2 A [2] - 360 mW [3] - 600 mW [4] - 750 mW [1] - 1.1 W [2] [5] - 2.5 W © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 2 of 15 PBSS302PD Philips Semiconductors 40 V PNP low VCEsat (BISS) transistor Table 5: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tstg Conditions Min Max Unit storage temperature −65 +150 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C [1] Device mounted on a ceramic PCB, AL2O3, standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [5] Operated under pulsed conditions: Duty cycle δ ≤ 10 % and pulse width tp ≤ 10 ms. 006aaa270 1600 Ptot (mW) 1200 800 (1) (2) (3) 400 0 −75 (4) −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, AL2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, mounting pad for collector 1 cm2 (4) FR4 PCB, standard footprint Fig 1. Power derating curves 9397 750 14513 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 3 of 15 PBSS302PD Philips Semiconductors 40 V PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air thermal resistance from junction to solder point Rth(j-sp) Min Typ Max Unit [1] - - 350 K/W [2] - - 208 K/W [3] - - 160 K/W [4] - - 113 K/W [1] [5] - - 50 K/W - - 45 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [4] Device mounted on a ceramic PCB, AL2O3, standard footprint. [5] Operated under pulsed conditions: Duty cycle δ ≤ 10 % and pulse width tp ≤ 10 ms. 006aaa271 103 Zth(j-a) (K/W) 102 (1) (2) (3) (4) (5) (6) (7) 10 (8) (9) (10) 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint (1) δ = 1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ = 0 Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 14513 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 4 of 15 PBSS302PD Philips Semiconductors 40 V PNP low VCEsat (BISS) transistor 006aaa272 103 Zth(j-a) (K/W) 102 10 (1) (2) (3) (4) (5) (6) (7) (8) (9) 1 10−1 10−5 (10) 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 (1) δ = 1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ = 0 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 14513 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 5 of 15 PBSS302PD Philips Semiconductors 40 V PNP low VCEsat (BISS) transistor 006aaa273 103 Zth(j-a) (K/W) 102 10 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 (1) δ = 1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ = 0 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 14513 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 6 of 15 PBSS302PD Philips Semiconductors 40 V PNP low VCEsat (BISS) transistor 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −30 V; IE = 0 A - - −0.1 µA VCB = −30 V; IE = 0 A; Tj = 150 °C - - −50 µA ICES collector-emitter cut-off current VCE = −30 V; VBE = 0 V - - −0.1 µA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −0.1 µA hFE DC current gain VCE = −2 V; IC = −0.5 A VCEsat collector-emitter saturation voltage 200 - - VCE = −2 V; IC = −1 A [1] 200 - - VCE = −2 V; IC = −2 A [1] 175 - - VCE = −2 V; IC = −4 A [1] 80 - - VCE = −2 V; IC = −6 A [1] 30 - - IC = −0.5 A; IB = −50 mA - −46 −60 mV IC = −1 A; IB = −50 mA - −70 −110 mV IC = −2 A; IB = −200 mA - −120 −180 mV IC = −4 A; IB = −400 mA [1] - −220 −300 mV IC = −6 A; IB = −600 mA [1] - −320 −450 mV [1] - 55 75 mΩ - −0.8 −0.85 V - −0.84 −0.9 V - −0.84 −1 V RCEsat collector-emitter saturation resistance IC = −6 A; IB = −600 mA VBEsat base-emitter saturation voltage IC = −0.5 A; IB = −50 mA IC = −1 A; IB = −50 mA IC = −1 A; IB = −100 mA [1] IC = −4 A; IB = −400 mA [1] - −1.0 −1.1 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −2 A - −0.8 −1.0 V td delay time - 12 - ns tr rise time VCC = −10 V; IC = −2 A; IBon = −0.1 A; IBoff = 0.1 A - 43 - ns ton turn-on time - 55 - ns ts storage time - 241 - ns tf fall time - 80 - ns toff turn-off time - 321 - ns fT transition frequency VCE = −10 V; IC = −0.1 A; f = 100 MHz - 110 - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - 50 - pF [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 9397 750 14513 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 7 of 15 PBSS302PD Philips Semiconductors 40 V PNP low VCEsat (BISS) transistor 006aaa282 600 VBE (V) (1) hFE 006aaa283 −1.6 −1.2 400 (2) −0.8 (3) 200 −0.4 0 −10−1 −1 −10 −102 −103 −104 −105 IC (mA) VCE = −2 V 0 −10−1 −1 −10 −102 −103 −104 −105 IC (mA) VCE = −2 V (1) Tamb = 100 °C (1) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. DC current gain as a function of collector current; typical values 006aaa284 −1 VCEsat (V) Fig 6. Base-emitter voltage as a function of collector current; typical values 006aaa285 −1 VCEsat (V) (1) −10−1 −10−1 (2) (3) (1) (2) −10−2 −10−3 −10−1 −10−2 −1 −10 −102 −103 −104 IC (mA) −10−3 −10−1 (3) −1 −102 −103 −104 −105 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values 9397 750 14513 Product data sheet −10 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 8 of 15 PBSS302PD Philips Semiconductors 40 V PNP low VCEsat (BISS) transistor 006aaa287 −1.3 006aaa327 103 RCEsat (Ω) VBEsat (V) 102 −0.9 (1) 10 (2) (3) (2) 1 (3) −0.5 (1) 10−1 −0.1 −10−1 −1 −10 −102 −103 −104 −105 IC (mA) 10−2 −10−1 −1 −102 −103 −104 IC (A) Tamb = 25 °C IC/IB = 20 (1) Tamb = −55 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = 100 °C (3) IC/IB = 10 Fig 9. Base-emitter saturation voltage as a function of collector current; typical values Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values 9397 750 14513 Product data sheet −10 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 9 of 15 PBSS302PD Philips Semiconductors 40 V PNP low VCEsat (BISS) transistor 006aaa288 −12 IC (A) RCEsat (Ω) (1) (2) (4) −8 006aaa289 102 (3) 10 (5) (6) (7) (8) 1 (9) (1) (10) −4 (2) 10−1 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 VCE (V) Tamb = 25 °C 10−2 −10−1 (3) −1 −10 −102 −103 −104 IC (mA) IC/IB = 20 (1) IB = −400 mA (1) Tamb = 100 °C (2) IB = −360 mA (2) Tamb = 25 °C (3) IB = −320 mA (3) Tamb = −55 °C (4) IB = −280 mA (5) IB = −240 mA (6) IB = −200 mA (7) IB = −160 mA (8) IB = −120 mA (9) IB = −80 mA (10) IB = −40 mA Fig 11. Collector current as a function of collector-emitter voltage; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values 9397 750 14513 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 10 of 15 PBSS302PD Philips Semiconductors 40 V PNP low VCEsat (BISS) transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 (1) VCC = −10 V; IC = −2 A; IBon = −0.1 A; IBoff = 0.1 A Fig 14. Test circuit for switching times 9397 750 14513 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 11 of 15 PBSS302PD Philips Semiconductors 40 V PNP low VCEsat (BISS) transistor 9. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.26 0.10 0.40 0.25 0.95 1.9 Dimensions in mm 04-11-08 Fig 15. Package outline SOT457 (SC-74) 10. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PBSS302PD Package SOT457 Description Packing quantity 3000 5000 10000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 - -165 [1] For further information and the availability of packing methods, see Section 15. [2] T1: normal taping [3] T2: reverse taping 9397 750 14513 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 12 of 15 PBSS302PD Philips Semiconductors 40 V PNP low VCEsat (BISS) transistor 11. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PBSS302PD_1 20050418 Product data sheet - 9397 750 14513 - 9397 750 14513 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 13 of 15 PBSS302PD Philips Semiconductors 40 V PNP low VCEsat (BISS) transistor 12. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions 14. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14513 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 18 April 2005 14 of 15