PHILIPS PBSS302PD

PBSS302PD
40 V PNP low VCEsat (BISS) transistor
Rev. 01 — 18 April 2005
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a
SOT457 (SC-74) SMD plastic package.
NPN complement: PBSS302ND
1.2 Features
■
■
■
■
■
Ultra low collector-emitter saturation voltage VCEsat
4 A continuous collector current capability IC (DC)
Up to 15 A peak current
Very low collector-emitter saturation resistance
High efficiency due to less heat generation
1.3 Applications
■
■
■
■
■
■
Power management functions
Charging circuits
DC-to-DC conversion
MOSFET gate driving
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
-
−40
V
IC
collector current (DC)
-
-
−4
A
ICM
peak collector current
t = 1 ms or limited
by Tj(max)
-
-
−15
A
RCEsat
collector-emitter saturation
resistance
IC = −6 A;
IB = −600 mA
-
55
75
mΩ
[1]
[2]
[1]
Device mounted on a ceramic Printed-Circuit Board (PCB), AL2O3, standard footprint.
[2]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2:
Pinning
Pin
Description
1
collector
2
collector
3
base
4
emitter
5
collector
6
collector
Simplified outline
6
5
Symbol
1, 2, 5, 6
4
3
1
2
3
4
sym030
3. Ordering information
Table 3:
Ordering information
Type number
PBSS302PD
Package
Name
Description
Version
SC-74
plastic surface mounted package; 6 leads
SOT457
4. Marking
Table 4:
Marking codes
Type number
Marking code
PBSS302PD
C9
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
−40
V
VCEO
collector-emitter voltage
open base
-
−40
V
VEBO
emitter-base voltage
open collector
-
−5
V
-
−4
A
-
−15
A
-
−0.8
A
[1]
IC
collector current (DC)
ICM
peak collector current
IB
base current (DC)
IBM
peak base current
tp ≤ 300 µs
total power dissipation
Tamb ≤ 25 °C
Ptot
t = 1 ms or limited
by Tj(max)
9397 750 14513
Product data sheet
-
−2
A
[2]
-
360
mW
[3]
-
600
mW
[4]
-
750
mW
[1]
-
1.1
W
[2] [5]
-
2.5
W
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 18 April 2005
2 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
Table 5:
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Tstg
Conditions
Min
Max
Unit
storage temperature
−65
+150
°C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
[1]
Device mounted on a ceramic PCB, AL2O3, standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[5]
Operated under pulsed conditions: Duty cycle δ ≤ 10 % and pulse width tp ≤ 10 ms.
006aaa270
1600
Ptot
(mW)
1200
800
(1)
(2)
(3)
400
0
−75
(4)
−25
25
75
125
175
Tamb (°C)
(1) Ceramic PCB, AL2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, mounting pad for collector 1 cm2
(4) FR4 PCB, standard footprint
Fig 1. Power derating curves
9397 750 14513
Product data sheet
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Rev. 01 — 18 April 2005
3 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6:
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance from
junction to ambient
Rth(j-a)
in free air
thermal resistance from
junction to solder point
Rth(j-sp)
Min
Typ
Max
Unit
[1]
-
-
350
K/W
[2]
-
-
208
K/W
[3]
-
-
160
K/W
[4]
-
-
113
K/W
[1] [5]
-
-
50
K/W
-
-
45
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4]
Device mounted on a ceramic PCB, AL2O3, standard footprint.
[5]
Operated under pulsed conditions: Duty cycle δ ≤ 10 % and pulse width tp ≤ 10 ms.
006aaa271
103
Zth(j-a)
(K/W)
102
(1)
(2)
(3)
(4)
(5)
(6)
(7)
10
(8)
(9)
(10)
1
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14513
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 18 April 2005
4 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
006aaa272
103
Zth(j-a)
(K/W)
102
10
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
1
10−1
10−5
(10)
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14513
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 18 April 2005
5 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
006aaa273
103
Zth(j-a)
(K/W)
102
10
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
1
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14513
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 18 April 2005
6 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = −30 V; IE = 0 A
-
-
−0.1
µA
VCB = −30 V; IE = 0 A; Tj = 150 °C
-
-
−50
µA
ICES
collector-emitter
cut-off current
VCE = −30 V; VBE = 0 V
-
-
−0.1
µA
IEBO
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−0.1
µA
hFE
DC current gain
VCE = −2 V; IC = −0.5 A
VCEsat
collector-emitter
saturation voltage
200
-
-
VCE = −2 V; IC = −1 A
[1]
200
-
-
VCE = −2 V; IC = −2 A
[1]
175
-
-
VCE = −2 V; IC = −4 A
[1]
80
-
-
VCE = −2 V; IC = −6 A
[1]
30
-
-
IC = −0.5 A; IB = −50 mA
-
−46
−60
mV
IC = −1 A; IB = −50 mA
-
−70
−110
mV
IC = −2 A; IB = −200 mA
-
−120
−180
mV
IC = −4 A; IB = −400 mA
[1]
-
−220
−300
mV
IC = −6 A; IB = −600 mA
[1]
-
−320
−450
mV
[1]
-
55
75
mΩ
-
−0.8
−0.85
V
-
−0.84
−0.9
V
-
−0.84
−1
V
RCEsat
collector-emitter
saturation resistance
IC = −6 A; IB = −600 mA
VBEsat
base-emitter
saturation voltage
IC = −0.5 A; IB = −50 mA
IC = −1 A; IB = −50 mA
IC = −1 A; IB = −100 mA
[1]
IC = −4 A; IB = −400 mA
[1]
-
−1.0
−1.1
V
VBEon
base-emitter turn-on
voltage
VCE = −2 V; IC = −2 A
-
−0.8
−1.0
V
td
delay time
-
12
-
ns
tr
rise time
VCC = −10 V; IC = −2 A;
IBon = −0.1 A; IBoff = 0.1 A
-
43
-
ns
ton
turn-on time
-
55
-
ns
ts
storage time
-
241
-
ns
tf
fall time
-
80
-
ns
toff
turn-off time
-
321
-
ns
fT
transition frequency
VCE = −10 V; IC = −0.1 A;
f = 100 MHz
-
110
-
MHz
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
-
50
-
pF
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
9397 750 14513
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 18 April 2005
7 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
006aaa282
600
VBE
(V)
(1)
hFE
006aaa283
−1.6
−1.2
400
(2)
−0.8
(3)
200
−0.4
0
−10−1
−1
−10
−102
−103
−104
−105
IC (mA)
VCE = −2 V
0
−10−1
−1
−10
−102
−103
−104
−105
IC (mA)
VCE = −2 V
(1) Tamb = 100 °C
(1) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. DC current gain as a function of collector
current; typical values
006aaa284
−1
VCEsat
(V)
Fig 6. Base-emitter voltage as a function of collector
current; typical values
006aaa285
−1
VCEsat
(V)
(1)
−10−1
−10−1
(2)
(3)
(1)
(2)
−10−2
−10−3
−10−1
−10−2
−1
−10
−102
−103
−104
IC (mA)
−10−3
−10−1
(3)
−1
−102
−103
−104
−105
IC (mA)
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
9397 750 14513
Product data sheet
−10
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 18 April 2005
8 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
006aaa287
−1.3
006aaa327
103
RCEsat
(Ω)
VBEsat
(V)
102
−0.9
(1)
10
(2)
(3)
(2)
1
(3)
−0.5
(1)
10−1
−0.1
−10−1
−1
−10
−102
−103
−104
−105
IC (mA)
10−2
−10−1
−1
−102
−103
−104
IC (A)
Tamb = 25 °C
IC/IB = 20
(1) Tamb = −55 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = 100 °C
(3) IC/IB = 10
Fig 9. Base-emitter saturation voltage as a function of
collector current; typical values
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
9397 750 14513
Product data sheet
−10
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 18 April 2005
9 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
006aaa288
−12
IC
(A)
RCEsat
(Ω)
(1)
(2)
(4)
−8
006aaa289
102
(3)
10
(5)
(6)
(7)
(8)
1
(9)
(1)
(10)
−4
(2)
10−1
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
VCE (V)
Tamb = 25 °C
10−2
−10−1
(3)
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20
(1) IB = −400 mA
(1) Tamb = 100 °C
(2) IB = −360 mA
(2) Tamb = 25 °C
(3) IB = −320 mA
(3) Tamb = −55 °C
(4) IB = −280 mA
(5) IB = −240 mA
(6) IB = −200 mA
(7) IB = −160 mA
(8) IB = −120 mA
(9) IB = −80 mA
(10) IB = −40 mA
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
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Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 18 April 2005
10 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
8. Test information
− IB
input pulse
(idealized waveform)
90 %
− I Bon (100 %)
10 %
− I Boff
output pulse
(idealized waveform)
− IC
90 %
− I C (100 %)
10 %
t
td
ts
tr
t on
tf
t off
006aaa266
Fig 13. BISS transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
oscilloscope
R2
VI
DUT
R1
mgd624
(1) VCC = −10 V; IC = −2 A; IBon = −0.1 A; IBoff = 0.1 A
Fig 14. Test circuit for switching times
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Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 18 April 2005
11 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
9. Package outline
3.1
2.7
6
3.0
2.5
1.7
1.3
1.1
0.9
5
4
2
3
0.6
0.2
pin 1 index
1
0.26
0.10
0.40
0.25
0.95
1.9
Dimensions in mm
04-11-08
Fig 15. Package outline SOT457 (SC-74)
10. Packing information
Table 8:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number
PBSS302PD
Package
SOT457
Description
Packing quantity
3000
5000
10000
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-
-165
[1]
For further information and the availability of packing methods, see Section 15.
[2]
T1: normal taping
[3]
T2: reverse taping
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Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 18 April 2005
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PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
11. Revision history
Table 9:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
PBSS302PD_1
20050418
Product data sheet
-
9397 750 14513
-
9397 750 14513
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 18 April 2005
13 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
12. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Definitions
14. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
15. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14513
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 18 April 2005
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