PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 — 31 January 2005 Product data sheet 1. Product profile 1.1 General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. 1.2 Features ■ ■ ■ ■ ■ Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistor BCP55 and BCX55 1.3 Applications ■ Major application segments: ◆ Automotive ◆ Telecom infrastructure ◆ Industrial ■ Power management: ◆ DC-to-DC conversion ◆ Supply line switching ■ Peripheral driver ◆ Driver in low supply voltage applications (e.g. lamps and LEDs) ◆ Inductive load driver (e.g. relays, buzzers and motors) 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions VCEO collector-emitter voltage open base IC collector current (DC) ICM peak collector current RCEsat equivalent on-resistance [1] t = 1 ms or limited by Tj(max) IC = 1 A; IB = 100 mA [2] Min Typ Max Unit - - 60 V - - 1 A - - 2 A - 200 250 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad. [2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PBSS4160V Philips Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2: Discrete pinning Pin Description 1, 2, 5, 6 collector 3 base 4 emitter Simplified outline 6 5 Symbol 4 1, 2, 5, 6 3 4 sym014 1 2 3 SOT666 3. Ordering information Table 3: Ordering information Type number Package Name Description Version PBSS4160V - plastic surface mounted package; 6 leads SOT666 4. Marking Table 4: Marking codes Type number Marking code PBSS4160V 41 9397 750 14359 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 31 January 2005 2 of 14 PBSS4160V Philips Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VCBO Conditions Min Max Unit collector-base voltage open emitter - 80 V VCEO collector-emitter voltage open base - 60 V VEBO emitter-base voltage open collector - 5 V - 0.9 A [1] collector current (DC) IC [2] ICM peak collector current t = 1 ms or limited by Tj(max) IB base current (DC) IBM peak base current Ptot total power dissipation Tamb ≤ 25 °C tp ≤ 300 µs; δ ≤ 0.02 1 - 2 A - 300 mA - 1 A [1] - 300 mW [2] - 500 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad. 001aaa714 0.6 Ptot (W) (1) 0.4 (2) 0.2 0 0 40 80 120 160 Tamb (°C) (1) FR4 PCB; 1 cm2 collector mounting pad. (2) FR4 PCB; standard footprint. Fig 1. Power derating curves 9397 750 14359 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 31 January 2005 3 of 14 PBSS4160V Philips Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) Min Typ Max Unit in free air [1] - - 415 K/W [2] - - 250 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad. 001aaa715 103 Zth (K/W) (1) (2) (3) (4) (5) 102 (6) (7) (8) (9) 10 (10) 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 PCB; standard footprint. (1) δ = 1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ = 0 Fig 2. Transient thermal impedance as a function of pulse time; typical values 9397 750 14359 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 31 January 2005 4 of 14 PBSS4160V Philips Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit collector-base cut-off current VCB = 60 V; IE = 0 A - - 100 nA VCB = 60 V; IE = 0 A; Tj = 150 °C - - 50 µA ICES collector-emitter cut-off current VCE = 60 V; VBE = 0 V - - 100 nA IEBO emitter-base cut-off VEB = 5 V; IC = 0 A current - - 100 nA hFE DC current gain ICBO VCEsat collector-emitter saturation voltage VCE = 5 V; IC = 1 mA 250 400 - VCE = 5 V; IC = 500 mA [1] 200 350 - VCE = 5 V; IC = 1 A [1] 100 150 - - 90 110 mV - 110 140 mV - 200 250 mV - 0.95 1.1 V - 200 250 mΩ IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA VBEsat base-emitter saturation voltage IC = 1 A; IB = 50 mA RCEsat equivalent on-resistance IC = 1 A; IB = 100 mA VBEon base-emitter turn-on voltage VCE = 5 V; IC = 1 A - 0.82 0.9 V td delay time - 11 - ns tr rise time VCC = 10 V; IC = 0.5 A; IBon = 25 mA; IBoff = −25 mA - 78 - ns ton turn-on time - 90 - ns ts storage time - 340 - ns tf fall time - 160 - ns toff turn-off time - 500 - ns fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 150 220 - MHz Cc collector capacitance - 5.5 10 pF [1] VCB = 10 V; IE = Ie = 0 A; f = 1 MHz [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 9397 750 14359 Product data sheet [1] © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 31 January 2005 5 of 14 PBSS4160V Philips Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor mle130 800 hFE mle133 1.2 VBE (V) 600 (1) (1) 0.8 (2) (2) (3) 400 0.4 (3) 200 0 10−1 1 10 102 0 10−1 103 104 IC (mA) 1 VCE = 5 V VCE = 5 V (1) Tamb = 100 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 100 °C Fig 3. DC current gain as a function of collector current; typical values 102 103 104 IC (mA) Fig 4. Base-emitter voltage as a function of collector current; typical values mle135 1 10 mle104 1 VCEsat (V) VCEsat (V) 10−1 10−1 (2) (1) 10−2 (3) (1) (3) 10−3 10−1 1 10 102 103 104 IC (mA) 10−2 10−1 1 IC/IB = 10 IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = −55 °C Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values 102 103 104 IC (mA) Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values 9397 750 14359 Product data sheet 10 (2) © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 31 January 2005 6 of 14 PBSS4160V Philips Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor mle129 1 mle134 1.2 VBEsat (V) VCEsat (V) (1) (2) 0.8 (3) (1) 10−1 (2) 10−2 10−1 1 10 102 0.4 103 104 IC (mA) Tamb = 25 °C 0 10−1 1 10 102 103 104 IC (mA) IC/IB = 20 (1) IC/IB = 100 (1) Tamb = −55 °C (2) IC/IB = 50 (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Base-emitter saturation voltage as a function of collector current; typical values 9397 750 14359 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 31 January 2005 7 of 14 PBSS4160V Philips Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor mle131 2 (6) (5) (4) (3) (2) IC (A) (1) mle132 103 RCEsat (Ω) 1.6 102 (7) (8) 1.2 (9) 10 (10) 0.8 1 0.4 (1) (2) (3) 10−1 0 0 1 2 3 4 5 10−1 1 VCE (V) Tamb = 25 °C 10 102 103 104 IC (mA) IC/IB = 20 (1) IB = 60 mA (1) Tamb = 100 °C (2) IB = 54 mA (2) Tamb = 25 °C (3) IB = 48 mA (3) Tamb = −55 °C (4) IB = 42 mA (5) IB = 36 mA (6) IB = 30 mA (7) IB = 24 mA (8) IB = 18 mA (9) IB = 12 mA (10) IB = 6 mA Fig 9. Collector current as a function of collector-emitter voltage; typical values Fig 10. Equivalent on-resistance as a function of collector current; typical values 9397 750 14359 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 31 January 2005 8 of 14 PBSS4160V Philips Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor IB input pulse (idealized waveform) 90 % IBon (100%) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100%) 10 % t td ts tr ton tf toff 006aaa003 Fig 11. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mlb826 VCC = 10 V; IC = 0.5 A; IBon = 25 mA; IBoff = −25 mA Fig 12. Test circuit for switching times 9397 750 14359 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 31 January 2005 9 of 14 PBSS4160V Philips Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 8. Package outline Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 01-08-27 04-11-08 SOT666 Fig 13. Package outline SOT666 9397 750 14359 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 31 January 2005 10 of 14 PBSS4160V Philips Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 9. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number Package Description Packing quantity 4000 PBSS4160V [1] SOT666 4 mm pitch, 8 mm tape and reel -115 For further information and the availability of packing methods, see Section 14. 9397 750 14359 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 31 January 2005 11 of 14 PBSS4160V Philips Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 10. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PBSS4160V_2 20050131 Product data sheet - 9397 750 14359 PBSS4160V_1 Modifications: PBSS4160V_1 • • • • Table 7 Switching time parameters td, tr, ton, ts, tf and toff added Figure 11 BISS transistor switching time definition added Figure 12 Test circuit for switching times added Section 9 Packing information added 20040423 Objective data sheet - 9397 750 14359 Product data sheet 9397 750 12884 - © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 31 January 2005 12 of 14 PBSS4160V Philips Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 11. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14359 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 31 January 2005 13 of 14 PBSS4160V Philips Semiconductors 60 V, 1 A NPN low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information. . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 31 January 2005 Document number: 9397 750 14359 Published in The Netherlands