PHILIPS PBSS4160V

PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 02 — 31 January 2005
Product data sheet
1. Product profile
1.1 General description
Low VCEsat (BISS) NPN transistor in a SOT666 plastic package.
PNP complement: PBSS5160V.
1.2 Features
■
■
■
■
■
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency, reduces heat generation
Reduces printed-circuit board area required
Cost effective replacement for medium power transistor BCP55 and BCX55
1.3 Applications
■ Major application segments:
◆ Automotive
◆ Telecom infrastructure
◆ Industrial
■ Power management:
◆ DC-to-DC conversion
◆ Supply line switching
■ Peripheral driver
◆ Driver in low supply voltage applications (e.g. lamps and LEDs)
◆ Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1:
Quick reference data
Symbol
Parameter
Conditions
VCEO
collector-emitter voltage
open base
IC
collector current (DC)
ICM
peak collector current
RCEsat
equivalent on-resistance
[1]
t = 1 ms or limited by Tj(max)
IC = 1 A; IB = 100 mA
[2]
Min
Typ
Max Unit
-
-
60
V
-
-
1
A
-
-
2
A
-
200
250
mΩ
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad.
[2]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBSS4160V
Philips Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2:
Discrete pinning
Pin
Description
1, 2, 5, 6
collector
3
base
4
emitter
Simplified outline
6
5
Symbol
4
1, 2, 5, 6
3
4
sym014
1
2
3
SOT666
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
Description
Version
PBSS4160V
-
plastic surface mounted package; 6 leads
SOT666
4. Marking
Table 4:
Marking codes
Type number
Marking code
PBSS4160V
41
9397 750 14359
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 31 January 2005
2 of 14
PBSS4160V
Philips Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VCBO
Conditions
Min
Max
Unit
collector-base voltage open emitter
-
80
V
VCEO
collector-emitter
voltage
open base
-
60
V
VEBO
emitter-base voltage
open collector
-
5
V
-
0.9
A
[1]
collector current (DC)
IC
[2]
ICM
peak collector current
t = 1 ms or limited by
Tj(max)
IB
base current (DC)
IBM
peak base current
Ptot
total power dissipation Tamb ≤ 25 °C
tp ≤ 300 µs; δ ≤ 0.02
1
-
2
A
-
300
mA
-
1
A
[1]
-
300
mW
[2]
-
500
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad.
001aaa714
0.6
Ptot
(W)
(1)
0.4
(2)
0.2
0
0
40
80
120
160
Tamb (°C)
(1) FR4 PCB; 1 cm2 collector mounting pad.
(2) FR4 PCB; standard footprint.
Fig 1. Power derating curves
9397 750 14359
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 31 January 2005
3 of 14
PBSS4160V
Philips Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6:
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance from junction
to ambient
Rth(j-a)
Min Typ Max Unit
in free air
[1]
-
-
415 K/W
[2]
-
-
250 K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad.
001aaa715
103
Zth
(K/W)
(1)
(2)
(3)
(4)
(5)
102
(6)
(7)
(8)
(9)
10
(10)
1
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 PCB; standard footprint.
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0
Fig 2. Transient thermal impedance as a function of pulse time; typical values
9397 750 14359
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 31 January 2005
4 of 14
PBSS4160V
Philips Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
collector-base
cut-off current
VCB = 60 V; IE = 0 A
-
-
100
nA
VCB = 60 V; IE = 0 A;
Tj = 150 °C
-
-
50
µA
ICES
collector-emitter
cut-off current
VCE = 60 V; VBE = 0 V
-
-
100
nA
IEBO
emitter-base cut-off VEB = 5 V; IC = 0 A
current
-
-
100
nA
hFE
DC current gain
ICBO
VCEsat
collector-emitter
saturation voltage
VCE = 5 V; IC = 1 mA
250
400
-
VCE = 5 V; IC = 500 mA
[1]
200
350
-
VCE = 5 V; IC = 1 A
[1]
100
150
-
-
90
110
mV
-
110
140
mV
-
200
250
mV
-
0.95
1.1
V
-
200
250
mΩ
IC = 100 mA; IB = 1 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
VBEsat
base-emitter
saturation voltage
IC = 1 A; IB = 50 mA
RCEsat
equivalent
on-resistance
IC = 1 A; IB = 100 mA
VBEon
base-emitter
turn-on voltage
VCE = 5 V; IC = 1 A
-
0.82
0.9
V
td
delay time
-
11
-
ns
tr
rise time
VCC = 10 V; IC = 0.5 A;
IBon = 25 mA; IBoff = −25 mA
-
78
-
ns
ton
turn-on time
-
90
-
ns
ts
storage time
-
340
-
ns
tf
fall time
-
160
-
ns
toff
turn-off time
-
500
-
ns
fT
transition frequency IC = 50 mA; VCE = 10 V;
f = 100 MHz
150
220
-
MHz
Cc
collector
capacitance
-
5.5
10
pF
[1]
VCB = 10 V; IE = Ie = 0 A;
f = 1 MHz
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
9397 750 14359
Product data sheet
[1]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 31 January 2005
5 of 14
PBSS4160V
Philips Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
mle130
800
hFE
mle133
1.2
VBE
(V)
600
(1)
(1)
0.8
(2)
(2)
(3)
400
0.4
(3)
200
0
10−1
1
10
102
0
10−1
103
104
IC (mA)
1
VCE = 5 V
VCE = 5 V
(1) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = 100 °C
Fig 3. DC current gain as a function of collector
current; typical values
102
103
104
IC (mA)
Fig 4. Base-emitter voltage as a function of collector
current; typical values
mle135
1
10
mle104
1
VCEsat
(V)
VCEsat
(V)
10−1
10−1
(2) (1)
10−2
(3)
(1)
(3)
10−3
10−1
1
10
102
103
104
IC (mA)
10−2
10−1
1
IC/IB = 10
IC/IB = 20
(1) Tamb = 100 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = −55 °C
Fig 5. Collector-emitter saturation voltage as a
function of collector current; typical values
102
103
104
IC (mA)
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
9397 750 14359
Product data sheet
10
(2)
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 31 January 2005
6 of 14
PBSS4160V
Philips Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
mle129
1
mle134
1.2
VBEsat
(V)
VCEsat
(V)
(1)
(2)
0.8
(3)
(1)
10−1
(2)
10−2
10−1
1
10
102
0.4
103
104
IC (mA)
Tamb = 25 °C
0
10−1
1
10
102
103
104
IC (mA)
IC/IB = 20
(1) IC/IB = 100
(1) Tamb = −55 °C
(2) IC/IB = 50
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 8. Base-emitter saturation voltage as a function of
collector current; typical values
9397 750 14359
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 31 January 2005
7 of 14
PBSS4160V
Philips Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
mle131
2
(6)
(5)
(4)
(3)
(2)
IC
(A)
(1)
mle132
103
RCEsat
(Ω)
1.6
102
(7)
(8)
1.2
(9)
10
(10)
0.8
1
0.4
(1)
(2)
(3)
10−1
0
0
1
2
3
4
5
10−1
1
VCE (V)
Tamb = 25 °C
10
102
103
104
IC (mA)
IC/IB = 20
(1) IB = 60 mA
(1) Tamb = 100 °C
(2) IB = 54 mA
(2) Tamb = 25 °C
(3) IB = 48 mA
(3) Tamb = −55 °C
(4) IB = 42 mA
(5) IB = 36 mA
(6) IB = 30 mA
(7) IB = 24 mA
(8) IB = 18 mA
(9) IB = 12 mA
(10) IB = 6 mA
Fig 9. Collector current as a function of
collector-emitter voltage; typical values
Fig 10. Equivalent on-resistance as a function of
collector current; typical values
9397 750 14359
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 31 January 2005
8 of 14
PBSS4160V
Philips Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
IB
input pulse
(idealized waveform)
90 %
IBon (100%)
10 %
IBoff
output pulse
(idealized waveform)
IC
90 %
IC (100%)
10 %
t
td
ts
tr
ton
tf
toff
006aaa003
Fig 11. BISS transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
oscilloscope
R2
VI
DUT
R1
mlb826
VCC = 10 V; IC = 0.5 A; IBon = 25 mA; IBoff = −25 mA
Fig 12. Test circuit for switching times
9397 750 14359
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 31 January 2005
9 of 14
PBSS4160V
Philips Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
8. Package outline
Plastic surface mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
01-08-27
04-11-08
SOT666
Fig 13. Package outline SOT666
9397 750 14359
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 31 January 2005
10 of 14
PBSS4160V
Philips Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
9. Packing information
Table 8:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number
Package
Description
Packing quantity
4000
PBSS4160V
[1]
SOT666
4 mm pitch, 8 mm tape and reel
-115
For further information and the availability of packing methods, see Section 14.
9397 750 14359
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 31 January 2005
11 of 14
PBSS4160V
Philips Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
10. Revision history
Table 9:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
PBSS4160V_2
20050131
Product data sheet
-
9397 750 14359
PBSS4160V_1
Modifications:
PBSS4160V_1
•
•
•
•
Table 7 Switching time parameters td, tr, ton, ts, tf and toff added
Figure 11 BISS transistor switching time definition added
Figure 12 Test circuit for switching times added
Section 9 Packing information added
20040423
Objective data sheet
-
9397 750 14359
Product data sheet
9397 750 12884
-
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 31 January 2005
12 of 14
PBSS4160V
Philips Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
11. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14359
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 02 — 31 January 2005
13 of 14
PBSS4160V
Philips Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information. . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information . . . . . . . . . . . . . . . . . . . . 13
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 31 January 2005
Document number: 9397 750 14359
Published in The Netherlands