PHILIPS PBSS9110X

PBSS9110X
100 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 01 — 2 May 2005
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/
TO-243) SMD plastic package.
NPN complement: PBSS8110X.
1.2 Features
■
■
■
■
SOT89 package
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency leading to less heat generation
1.3 Applications
■ Major application segments:
◆ Automotive 42 V power
◆ Telecom infrastructure
◆ Industrial
■ Peripheral driver:
◆ Driver in low supply voltage applications (e.g. lamps and LEDs)
◆ Inductive load driver (e.g. relays, buzzers and motors)
■ DC-to-DC conversion
1.4 Quick reference data
Table 1:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
-
−100
V
IC
collector current (DC)
-
-
−1
A
ICM
peak collector current
single pulse;
tp ≤ 1 ms
-
-
−3
A
RCEsat
collector-emitter saturation
resistance
IC = −1 A;
IB = −100 mA
-
170
320
mΩ
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[1]
PBSS9110X
Philips Semiconductors
100 V, 1 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2:
Pinning
Pin
Description
1
emitter
2
collector
3
base
Simplified outline
Symbol
2
3
3
2
1
1
006aaa231
3. Ordering information
Table 3:
Ordering information
Type number
PBSS9110X
Package
Name
Description
Version
SC-62
plastic surface mounted package; collector pad for good
heat transfer; 3 leads
SOT89
4. Marking
Table 4:
Marking codes
Type number
Marking code [1]
PBSS9110X
*4C
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
9397 750 14765
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 May 2005
2 of 15
PBSS9110X
Philips Semiconductors
100 V, 1 A PNP low VCEsat (BISS) transistor
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
−120
V
VCEO
collector-emitter voltage
open base
-
−100
V
VEBO
emitter-base voltage
open collector
-
−5
V
IC
collector current (DC)
-
−1
A
ICM
peak collector current
-
−3
A
IB
base current (DC)
single pulse;
tp ≤ 1 ms
Tamb ≤ 25 °C
total power dissipation
Ptot
-
−0.3
A
[1]
-
0.55
W
[2]
-
1.4
W
[3]
-
2.0
W
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, 6 cm2 collector mounting pad.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa408
2.0
(1)
Ptot
(W)
1.6
(2)
1.2
0.8
(3)
0.4
0
0
40
80
120
160
Tamb (°C)
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
9397 750 14765
Product data sheet
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Rev. 01 — 2 May 2005
3 of 15
PBSS9110X
Philips Semiconductors
100 V, 1 A PNP low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6:
Thermal characteristics
Symbol
Parameter
Rth(j-a)
Rth(j-sp)
Conditions
thermal resistance from
junction to ambient
in free air
thermal resistance from
junction to solder point
Min
Typ
Max
Unit
[1]
-
-
227
K/W
[2]
-
-
89
K/W
[3]
-
-
63
K/W
-
-
16
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3]
Device mounted on a ceramic PCB, AL2O3, standard footprint.
006aaa409
103
duty cycle =
1
0.75
2
10
0.5
0.33
0.2
Zth(j-a)
(K/W)
10
0.1
0.05
0.02
0.01
1
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
t p (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14765
Product data sheet
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Rev. 01 — 2 May 2005
4 of 15
PBSS9110X
Philips Semiconductors
100 V, 1 A PNP low VCEsat (BISS) transistor
006aaa411
103
Zth(j-a)
(K/W)
102
10
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
1
0.01
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
t p (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
102
Zth(j-a)
(K/W)
006aaa410
duty cycle =
1
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
1
0.01
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
t p (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14765
Product data sheet
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Rev. 01 — 2 May 2005
5 of 15
PBSS9110X
Philips Semiconductors
100 V, 1 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
ICBO
collector-base cut-off
current
Conditions
Min
Typ
Max
Unit
VCB = −80 V; IE = 0 A
-
-
−100
nA
VCB = −80 V; IE = 0 A;
Tj = 150 °C
-
-
−50
µA
-
-
−100
nA
nA
ICES
collector-emitter cut-off VCE = −80 V; VBE = 0 V
current
IEBO
emitter-base cut-off
current
VEB = −4 V; IC = 0 A
-
-
−100
hFE
DC current gain
VCE = −5 V; IC = −1 mA
150
-
-
VCE = −5 V; IC = −250 mA
VCEsat
collector-emitter
saturation voltage
150
-
-
VCE = −5 V; IC = −0.5 A
[1]
150
-
450
VCE = −5 V; IC = −1 A
[1]
125
-
-
IC = −250 mA;
IB = −25 mA
-
-
−120
mV
IC = −500 mA;
IB = −50 mA
-
-
−180
mV
IC = −1 A; IB = −100 mA
[1]
-
-
−320
mV
IC = −1 A; IB = −100 mA
[1]
-
170
320
mΩ
-
-
−1.1
V
RCEsat
collector-emitter
saturation resistance
VBEsat
base-emitter saturation IC = −1 A; IB = −100 mA
voltage
VBEon
base-emitter turn-on
voltage
IC = −1 A; VCE = −5 V
-
-
−1.0
V
td
delay time
-
20
-
ns
tr
rise time
-
60
-
ns
ton
turn-on time
VCC = −10 V; IC = −0.5 A;
IBon = −0.025 A;
IBoff = 0.025 A
-
80
-
ns
ts
storage time
-
290
-
ns
tf
fall time
-
120
-
ns
toff
turn-off time
-
410
-
ns
fT
transition frequency
IC = −50 mA; VCE = −10 V;
f = 100 MHz
100
-
-
MHz
Cc
collector capacitance
IE = ie = 0 A; VCB = −10 V;
f = 1 MHz
-
-
17
pF
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
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Product data sheet
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Rev. 01 — 2 May 2005
6 of 15
PBSS9110X
Philips Semiconductors
100 V, 1 A PNP low VCEsat (BISS) transistor
001aaa376
600
(1)
hFE
001aaa377
−1.2
VBE
(V)
(1)
−0.8
400
(2)
(2)
(3)
0
−10−1
−0.4
(3)
200
−1
−10
−102
−103
−104
IC (mA)
VCE = −10 V
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −10 V
(1) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = 100 °C
Fig 5. DC current gain as a function of collector
current; typical values
001aaa378
−1
Fig 6. Base-emitter voltage as a function of collector
current; typical values
001aaa380
−1
VCEsat
(V)
VCEsat
(V)
−10−1
−10−1
(1)
(2)
(1)
(2)
(3)
−10−2
−10−1
−1
−10
−102
−103
−104
IC (mA)
−10−2
−10−1
−1
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C
IC/IB = 10
(1) Tamb = 100 °C
(1) IC/IB = 50
(2) Tamb = 25 °C
(2) IC/IB = 20
(3) Tamb = −55 °C
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
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Product data sheet
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Rev. 01 — 2 May 2005
7 of 15
PBSS9110X
Philips Semiconductors
100 V, 1 A PNP low VCEsat (BISS) transistor
001aaa381
−10
001aaa379
−10
VBEsat
(V)
VBEsat
(V)
−1
−1
(1)
(2)
(3)
−10−1
−10−1
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 10
−10−1
−10−1
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 9. Base-emitter saturation voltage as a function of
collector current; typical values
001aaa382
103
Fig 10. Base-emitter saturation voltage as a function of
collector current; typical values
001aaa383
103
RCEsat
(Ω)
RCEsat
(Ω)
102
102
10
10
(1)
(1)
(2)
(3)
1
1
(2)
10−1
−10−1
−1
−10
−102
−103
−104
IC (mA)
10−1
−10−1
−1
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C
IC/IB = 10
(1) Tamb = −55 °C
(1) IC/IB = 50
(2) Tamb = 25 °C
(2) IC/IB = 20
(3) Tamb = 100 °C
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
9397 750 14765
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 May 2005
8 of 15
PBSS9110X
Philips Semiconductors
100 V, 1 A PNP low VCEsat (BISS) transistor
001aaa384
−2
(1)
(2) (3)
(4) (5)
IC
(A)
−1.6
(6) (7)
(8)
(9)
−1.2
(10)
−0.8
−0.4
0
0
−1
−2
−3
−4
−5
VCE (V)
(1) IB = −45 mA
(2) IB = −40.5 mA
(3) IB = −36 mA
(4) IB = −31.5 mA
(5) IB = −27 mA
(6) IB = −22.5 mA
(7) IB = −18 mA
(8) IB = −13.5 mA
(9) IB = −9 mA
(10) IB = −4.5 mA
Fig 13. Collector current as a function of collector-emitter voltage; typical values
9397 750 14765
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 May 2005
9 of 15
PBSS9110X
Philips Semiconductors
100 V, 1 A PNP low VCEsat (BISS) transistor
8. Test information
− IB
input pulse
(idealized waveform)
90 %
− I Bon (100 %)
10 %
− I Boff
output pulse
(idealized waveform)
− IC
90 %
− I C (100 %)
10 %
t
td
ts
tr
t on
tf
t off
006aaa266
Fig 14. BISS transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
oscilloscope
R2
VI
DUT
R1
mgd624
VCC = −10 V; IC = −0.5 A; IBon = −0.025 A; IBoff = 0.025 A
Fig 15. Test circuit for switching times
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Rev. 01 — 2 May 2005
10 of 15
PBSS9110X
Philips Semiconductors
100 V, 1 A PNP low VCEsat (BISS) transistor
9. Package outline
4.6
4.4
1.8
1.4
1.6
1.4
2.6
2.4
4.25
3.75
1
2
1.2
0.8
3
0.53
0.40
1.5
0.48
0.35
0.44
0.23
3
Dimensions in mm
04-08-03
Fig 16. Package outline SOT89 (SC-62/TO-243)
10. Packing information
Table 8:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number
PBSS9110X
[1]
Package
SOT89
Description
8 mm pitch, 12 mm tape and reel
1000
4000
-115
-135
For further information and the availability of packing methods, see Section 18.
9397 750 14765
Product data sheet
Packing quantity
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 May 2005
11 of 15
PBSS9110X
Philips Semiconductors
100 V, 1 A PNP low VCEsat (BISS) transistor
11. Soldering
4.75
2.25
2.00
1.90
1.20
solder lands
0.85 0.20
solder resist
occupied area
1.70
1.20
solder paste
4.60
4.85
0.50
1.20
1.20
1.00
(3x)
3
2
1
msa442
0.60 (3x)
0.70 (3x)
3.70
3.95
SOT89 standard mounting conditions for reflow soldering
Dimensions in mm
Fig 17. Reflow soldering footprint SOT89 (SC-62/TO-243)
12. Mounting
32 mm
30 mm
32 mm
40
mm
2.5 mm
20
mm
40
mm
1 mm
3 mm
2.5 mm
2.5 mm
1 mm
1 mm
0.5 mm
0.5 mm
5 mm
3.96 mm
3.96 mm
1.6 mm
001aaa234
Fig 18. FR4 PCB, standard footprint
9397 750 14765
Product data sheet
5 mm
1.6 mm
001aaa235
Fig 19. FR4 PCB, mounting pad for
collector 6 cm2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 May 2005
12 of 15
PBSS9110X
Philips Semiconductors
100 V, 1 A PNP low VCEsat (BISS) transistor
13. Revision history
Table 9:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
PBSS9110X_1
20050502
Product data sheet
-
9397 750 14765
-
9397 750 14765
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 May 2005
13 of 15
PBSS9110X
Philips Semiconductors
100 V, 1 A PNP low VCEsat (BISS) transistor
14. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
15. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
17. Trademarks
16. Disclaimers
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
18. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14765
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 May 2005
14 of 15
PBSS9110X
Philips Semiconductors
100 V, 1 A PNP low VCEsat (BISS) transistor
19. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information . . . . . . . . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing information. . . . . . . . . . . . . . . . . . . . . 11
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information . . . . . . . . . . . . . . . . . . . . 14
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 2 May 2005
Document number: 9397 750 14765
Published in The Netherlands