DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D119 BYD123 Ultra fast low-loss rectifier Product specification Supersedes data of 1998 Dec 04 1999 Feb 10 Philips Semiconductors Product specification Ultra fast low-loss rectifier BYD123 FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass SOD81 package through Implotec(1) technology. This package is • High maximum operating temperature hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Available in ammo-pack. k handbook, 4 columns a MAM123 Fig.1 Simplified outline (SOD81) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 200 V VR continuous reverse voltage − 200 V IF(AV) average forward current Ttp = 115 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 5 and 6 − 1 A IFSM non-repetitive peak forward current t = 10 ms half sinewave; VR = VRRMmax − 25 A Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER VF forward voltage IR reverse current trr 1999 Feb 10 reverse recovery time CONDITIONS IF = 1 A; see Fig.2; Tj = 150 °C MAX. 0.8 UNIT V IF = 1 A; see Fig.2 0.93 V VR = VRRMmax; see Fig.3 2 µA VR = VRRMmax; Tj = 150 °C; see Fig.3 50 µA when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A 25 ns 2 Philips Semiconductors Product specification Ultra fast low-loss rectifier BYD123 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 60 K/W Rth j-a thermal resistance from junction to ambient note 1 120 K/W Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7. For more information please refer to the “General part of the associated handbook”. 1999 Feb 10 3 Philips Semiconductors Product specification Ultra fast low-loss rectifier BYD123 GRAPHICAL DATA MGR648 MGR651 102 handbook, halfpage 10 handbook, halfpage IR IF (A) (µA) Tj = 175 °C 10 8 Tj = 175 °C 100 °C 6 1 100 °C 25 °C 4 10−1 2 10−2 10−3 0 0.4 0 0.8 1.2 1.6 2 25 °C 0 40 80 120 VF (V) Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 Reverse current as a function of reverse voltage; typical values. MGR639 102 handbook, halfpage 160 200 VR (V) MGR642 3 handbook, halfpage IF(AV) (A) Cd (pF) 2 Tj = 25°C 10 lead length = 10 mm 1 1 1 10 VR (V) 0 102 0 Fig.5 Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1999 Feb 10 4 40 80 120 200 160 Ttp (°C) Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Philips Semiconductors Product specification Ultra fast low-loss rectifier BYD123 MGR654 3 handbook, halfpage a=3 P (W) 2.5 50 handbook, halfpage 2.0 25 1.57 1.42 2 7 50 1 2 3 0 MGA200 0.4 0 Fig.6 0.8 1.2 1.6 2 IF(AV) (A) Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1999 Feb 10 Dimensions in mm. Fig.7 5 Device mounted on a printed-circuit board. Philips Semiconductors Product specification Ultra fast low-loss rectifier BYD123 PACKAGE OUTLINE Hermetically sealed glass package; ImplotecTM(1) technology; axial leaded; 2 leads SOD81 G1 (2) k a b D L G L DIMENSIONS (mm are the original dimensions) UNIT mm b max. D max. 0.81 G1 max. G max. 2.15 3.8 5 L min. 0 1 2 mm scale 28 Notes 1. Implotec is a trademark of Philips. 2. The marking band indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-20 SOD81 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Feb 10 6 Philips Semiconductors Product specification Ultra fast low-loss rectifier BYD123 NOTES 1999 Feb 10 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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