DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 US1 series SMA ultra fast low-loss controlled avalanche rectifiers Product specification 2000 Feb 14 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers US1 series FEATURES DESCRIPTION • Glass passivated DO-214AC surface mountable package with glass passivated chip. • High maximum operating temperature • Ideal for surface mount automotive applications The well-defined void-free case is of a transfer-moulded thermo-setting plastic. The small rectangular package has two J bent leads. • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • UL 94V-O classified plastic package • Shipped in 12 mm embossed tape cathode band olumns • Marking: cathode, date code, type code k a • Easy pick and place. Top view Side view MSA474 Fig.1 Simplified outline (DO-214AC) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR VRMS PARAMETER CONDITIONS 2000 Feb 14 MAX. UNIT repetitive peak reverse voltage US1A − 50 V US1B − 100 V US1D − 200 V US1G − 400 V US1J − 600 V US1A − 50 V US1B − 100 V US1D − 200 V US1G − 400 V US1J − 600 V US1A − 35 V US1B − 70 V US1D − 140 V US1G − 280 V − 420 V − 1 A continuous reverse voltage root mean square voltage US1J IF(AV) MIN. average forward current averaged over any 20 ms period; Ttp = 110 °C; see Fig.2 2 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers SYMBOL US1 series PARAMETER CONDITIONS IFSM non-repetitive peak forward current Tstg storage temperature Tj junction temperature MIN. t = 8.3 ms half sine wave; Tj = 25 °C prior to surge; VR = VRRMmax See Fig.3 MAX. UNIT − 25 A −65 +175 °C −65 +175 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage CONDITIONS TYP. MAX. UNIT IF = 1 A; US1A to US1G see Fig.4 − 1.1 V US1J see Fig.5 − 1.4 V reverse current VR = VRRMmax; see Figs 6 and 7 − 10 µA VR = VRRMmax; Tj = 165 °C; see Figs 6 and 7 − 50 µA − 50 ns trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.12 Cd diode capacitance VR = 4 V; f = 1 MHz; US1A to US1G see Fig.8 14 − pF US1J see Fig.9 10 − pF THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-tp thermal resistance from junction to tie-point; see Fig.10 Rth j-a thermal resistance from junction to ambient VALUE 27 K/W note 1 100 K/W note 2 150 K/W Notes 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm. For more information please refer to the ‘General Part of associated Handbook’. 2000 Feb 14 3 UNIT Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers US1 series GRAPHICAL DATA MCD822 2 MBK455 200 handbook, halfpage handbook, halfpage IF(AV) (A) Tj (°C) 1.5 100 1 0.5 0 0 0 40 80 120 160 200 Ttp (°C) 0 VR = VRRMmax; δ = 0.5; a = 1.57. Fig.2 VR (%VRmax) 100 Device mounted as shown in Fig.11. Solid line: Al2O3 printed-circuit board. Dotted line: epoxy printed-circuit board. Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 MCD792 102 handbook, halfpage 50 Maximum permissible junction temperature as a function of reverse voltage. MCD793 102 handbook, halfpage IF IF (A) (A) 10 10 1 1 10−1 10−1 10−2 10−2 10−3 0 1 2 VF (V) 10−3 3 0 1 US1A to G Tj = 25 °C. US1J Tj = 25 °C. Fig.4 Fig.5 Forward current as a function of forward voltage; typical values. 2000 Feb 14 4 2 3 VF (V) 4 Forward current as a function of forward voltage; typical values. Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers US1 series MCD807 102 handbook, halfpage MCD806 102 handbook, halfpage IR (µA) IR (µA) Tj = 165 °C 10 Tj = 165 °C 10 1 1 10−1 10−1 Tj = 25 °C 10−2 10−3 10−2 Tj = 25 °C 0 20 60 40 10−3 80 100 VR (%VRmax) 0 20 US1A to G f = 1 MHz; Tj = 25 °C. US1J f = 1 MHz; Tj = 25 °C. Fig.6 Fig.7 Reverse current as a function of reverse voltage; typical values. MCD798 102 handbook, halfpage 60 40 80 100 VR (%VRmax) Reverse current as a function of reverse voltage; typical values. MCD797 102 handbook, halfpage Cd (pF) Cd (pF) 10 10 1 10−2 10−1 1 10 VR (V) 1 10−2 102 10−1 US1 A to G f = 1 MHz; Tj = 25 °C. US1J f = 1 MHz; Tj = 25 °C. Fig.8 Fig.9 Diode capacitance as a function of reverse voltage; typical values. 2000 Feb 14 5 1 10 VR (V) 102 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers US1 series MBL120 102 handbook, halfpage 50 Zth j-tp (K/W) 4.5 10 50 2.5 1 1 102 10 103 tp (ms) 104 1.25 MSB213 Dimensions in mm. Material: Al2O3 or epoxy-glass. Fig.10 Transient thermal impedance as a function of pulse width. handbook, full pagewidth Fig.11 Printed-circuit board for surface mounting. IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.12 Test circuit and reverse recovery time waveform and definition. 2000 Feb 14 6 MAM057 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers US1 series PACKAGE OUTLINE Transfer-moulded thermo-setting plastic small rectangular surface mounted package; 2 connectors SOD124 H D A A1 c Q E b (1) 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D E H Q mm 2.3 2.0 0.05 1.6 1.4 0.2 4.5 4.3 2.8 2.4 5.5 5.1 3.3 2.7 Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD124 2000 Feb 14 REFERENCES IEC JEDEC EIAJ DO-214AC EUROPEAN PROJECTION ISSUE DATE 99-10-22 7 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers US1 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2000 Feb 14 8 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers US1 series NOTES 2000 Feb 14 9 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers US1 series NOTES 2000 Feb 14 10 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers US1 series NOTES 2000 Feb 14 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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