BTA216-600BT Triacs high commutation Rev. 01 — 25 August 2005 Product data sheet 1. Product profile 1.1 General description Passivated high commutation triac in a plastic envelope. Featuring high maximum junction temperature and high commutation capability. Intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This device will commutate the full rated RMS current at the maximum rated junction temperature, without the aid of a snubber. 1.2 Features ■ High maximum junction temperature ■ High commutation capability 1.3 Quick reference data ■ VDRM ≤ 600 V ■ IGT ≤ 50 mA ■ Tj ≤ 150 °C ■ IT(RMS) ≤ 16 A ■ ITSM ≤ 140 A ■ dIcom/dt = 18 A/ms 2. Pinning information Table 1: Pinning Pin Description 1 main terminal 1 (T1) 2 main terminal 2 (T2) 3 gate (G) mb mounting base Simplified outline mb T1 G [1] SOT78 (TO-220AB) Connected to main terminal 2 (T2) T2 sym051 1 2 3 [1] Symbol BTA216-600BT Philips Semiconductors Triacs high commutation 3. Ordering information Table 2: Ordering information Type number BTA216-600BT Package Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 3 leads; 1 mounting hole SOT78 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions [1] VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 124 °C; see Figure 4 and 5 ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 t = 20 ms t = 16.7 ms Min Max Unit - 600 V - 16 A - 140 A - 150 A I2t I2t for fusing t = 10 ms - 98 A2s dIT/dt rate of rise of on-state current ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs IGM peak gate current - 2 A VGM peak gate voltage - 5 V PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature −40 +150 °C Tj junction temperature - 150 °C [1] over any 20 ms period Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. BTA216-600BT_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 25 August 2005 2 of 12 BTA216-600BT Philips Semiconductors Triacs high commutation 003aab068 25 Ptot (W) Tmb(max) (°C) α = 180° α 20 126 120° α 120 90° 15 132 60° 30° 10 138 5 144 0 0 4 8 12 16 IT(RMS) (A) 150 20 α = conduction angle Fig 1. On-state power dissipation as a function of RMS on-state current; maximum values 003aab070 150 ITSM (A) 100 50 0 1 102 10 n 103 f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of number of half cycles; sinusoidal currents; maximum values BTA216-600BT_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 25 August 2005 3 of 12 BTA216-600BT Philips Semiconductors Triacs high commutation 003aab069 103 ITSM (A) (1) 102 ITSM IT t T Tj(init) = 25 °C max 10 10−5 10−4 10−3 10−2 10−1 tp (s) tp ≤ 20 ms (1) dIT/dt limit Fig 3. Non-repetitive peak on-state current as a function of pulse width; sinusoidal currents; maximum values 003aab072 50 IT(RMS) (A) 003aab071 20 124 °C IT(RMS) (A) 40 15 30 10 20 5 10 0 10−2 10−1 1 10 surge duration (s) 0 −50 0 50 100 150 Tmb (°C) f = 50 Hz; Tmb ≤ 131 °C Fig 4. RMS on-state current as a function of surge duration; sinusoidal currents; maximum values Fig 5. RMS on-state current as a function of mounting base temperature; maximum values BTA216-600BT_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 25 August 2005 4 of 12 BTA216-600BT Philips Semiconductors Triacs high commutation 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter thermal resistance from junction to mounting base Rth(j-mb) thermal resistance from junction to ambient Rth(j-a) Conditions Min Typ Max Unit full cycle; see Figure 6 - - 1.2 K/W half cycle; see Figure 6 - - 1.7 K/W in free air - 60 - K/W 003aab078 10 Zth(j-mb) (K/W) 1 (1) 10−1 (2) PD 10−2 tp 10−3 10−5 10−4 10−3 10−2 10−1 1 t 10 tp (s) (1) half cycle (2) full cycle Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width BTA216-600BT_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 25 August 2005 5 of 12 BTA216-600BT Philips Semiconductors Triacs high commutation 6. Static characteristics Table 5: Static characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter gate trigger current IGT latching current IL Conditions VD = 12 V; IT = 0.1 A; see Figure 8 Min Typ Max Unit [1] T2+ G+ 2 18 50 mA T2+ G− 2 21 50 mA T2− G− 2 34 50 mA VD = 12 V; IGT = 0.1 A; see Figure 10 T2+ G+ - 31 60 mA T2+ G− - 34 90 mA T2− G− - 30 60 mA - 31 60 mA IH holding current VD = 12 V; IGT = 0.1 A; see Figure 11 VT on-state voltage IT = 20 A; see Figure 9 - 1.2 1.5 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; see Figure 7 - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 150 °C 0.25 0.4 - V VD = VDRM(max); Tj = 150 °C - 0.5 3 mA off-state current ID [1] Device does not trigger in the T2− G+ quadrant. BTA216-600BT_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 25 August 2005 6 of 12 BTA216-600BT Philips Semiconductors Triacs high commutation 7. Dynamic characteristics Table 6: Dynamic characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit dVD/dt rate of rise of off-state voltage VDM = 0.67VDRM(max); Tj = 150 °C; exponential waveform; gate open circuit 500 1500 - V/µs dIcom/dt rate of change of commutating current VDM = 400 V; Tj = 150 °C; IT(RMS) = 16 A; without snubber; gate open circuit; see Figure 12 9 18 - A/ms tgt gate-controlled turn-on time ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs - 2 - µs 001aab073 1.6 VGT (Tj) IGT (Tj) VGT (25°C) IGT (25°C) 1.2 003aab074 3 2 (1) (2) (3) 0.8 0.4 −50 1 0 50 100 Tj (°C) 150 0 -50 0 50 100 Tj (°C) 150 (1) T2− G− (2) T2+ G− (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature BTA216-600BT_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 25 August 2005 7 of 12 BTA216-600BT Philips Semiconductors Triacs high commutation 003aab077 50 IT (A) (1) (2) 003aab075 3 IL(Tj) IL(25°C) (3) 40 2 30 20 1 10 0 0 0.5 1 1.5 2 2.5 0 −50 0 50 100 150 Tj (°C) VT (V) VO = 1.195 V; RS = 18 mΩ (1) Tj = 150 °C; typical values (2) Tj = 25 °C; maximum values (3) Tj = 150 °C; maximum values Fig 9. On-state characteristic Fig 10. Normalized latching current as a function of junction temperature 003aab076 3 dICOMM/dt (A/ms) IH(Tj) IH(25°C) 2 102 1 10 0 −50 003aab079 103 1 0 50 100 Tj (°C) 150 Fig 11. Normalized holding current as a function of junction temperature 20 60 100 180 140 Tj (°C) Fig 12. Rate of change of commutating current as a function of junction temperature; typical values 8. Package information Plastic meets UL94 V-0 at 1⁄8 inch. BTA216-600BT_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 25 August 2005 8 of 12 BTA216-600BT Philips Semiconductors Triacs high commutation 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 c b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1 L2 max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.45 1.00 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 05-01-31 05-03-22 Fig 13. Package outline SOT78 (TO-220AB) BTA216-600BT_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 25 August 2005 9 of 12 BTA216-600BT Philips Semiconductors Triacs high commutation 10. Revision history Table 7: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BTA216-600BT_1 20050825 Product data sheet - - - BTA216-600BT_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 25 August 2005 10 of 12 BTA216-600BT Philips Semiconductors Triacs high commutation 11. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 14. Trademarks 13. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] BTA216-600BT_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 25 August 2005 11 of 12 Philips Semiconductors BTA216-600BT Triacs high commutation 16. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Package information . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 25 August 2005 Document number: BTA216-600BT_1 Published in The Netherlands