BLA0912-250R Avionics LDMOS power transistor Rev. 01 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Table 1. Test information Typical RF performance measured in common source class-AB test circuit at PL = 250 W and 960 MHz to 1215 MHz frequency band. Th = 25 °C; Zth(j-h) = 0.15 K/W; unless otherwise specified. f tp δ VDS PL (MHz) (μs) % (V) (W) (dB) (dB) (%) (dB) (ns) (ns) (K/W) (deg) all modes 960 to 1215 100 10 36 250 13.5 0.8 50 0.1 25 6 0.18 ±5 TCAS 1030 to 1090 32 0.1 36 250 14.0 0.8 50 0 25 6 0.07 ±5 Mode-S 1030 to 1090 128 2 250 13.5 0.8 50 0.1 25 6 0.15 ±5 1030 to 1090 340 1 JTIDS 960 to 1215 3300 22 Mode of operation 36 Gp ΔGp ηD Pdroop(pulse) tr tf Zth(j-h) ϕins(rel) 36 250 13.5 0.8 50 0.2 25 6 0.20 ±5 36 200 13.0 1.2 45 0.2 25 6 0.45 ±5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance. 1.3 Applications Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS and JTIDS, DME or TACAN. BLA0912-250R NXP Semiconductors Avionics LDMOS power transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Graphic symbol 1 1 3 [1] 2 2 3 sym039 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description BLA0912-250R - Version flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 75 V VGS gate-source voltage - ±22 V Ptot total power dissipation - 700 W Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C Th ≤ 25 °C; tp = 50 μs; δ = 2 % 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions transient thermal impedance from junction to heatsink Th = 25 °C Zth(j-h) [1] BLA0912-250R_1 Product data sheet [1] Typ Unit 0.18 K/W Thermal resistance is determined under RF operating conditions; tp = 100 μs, δ = 10 %. All information provided in this document is subject to legal disclaimers. Rev. 01 — 3 March 2010 © NXP B.V. 2010. All rights reserved. 2 of 13 BLA0912-250R NXP Semiconductors Avionics LDMOS power transistor 6. Characteristics Table 6. DC characteristics Tj = 25 °C; per section unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3 mA Min Typ Max Unit 75 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 300 mA 4 - 5 V IDSS drain leakage current VGS = 0 V; VDS = 36 V - - 1 μA IDSX drain cut-off current VGS = VGSth + 9 V; VDS = 10 V 45 - - A IGSS gate leakage current VGS = 20 V; VDS = 0 V - - 1 μA gfs forward transconductance VDS = 10 V; ID = 10 A - 9 - S RDS(on) drain-source on-state resistance VGS = 9 V; ID = 10 A - 60 - mΩ Table 7. RF characteristics RF performance in common source class-AB circuit; Th = 25 °C; Zth = 0.15 K/W; unless otherwise specified. Symbol Parameter Conditions VDS drain-source voltage Min Typ Max Unit - - 36 V 1215 MHz f frequency 960 - PL output power tp = 100 μs; δ = 10 % 250 - W Gp power gain PL = 250 W 12 13 dB ηD drain efficiency tp = 100 μs; δ = 10 % 40 50 % Zth(j-h) transient thermal impedance from junction to heatsink tp = 100 μs; δ = 10 % - - 0.2 K/W Th heatsink temperature −55 - +70 °C Pdroop(pulse) pulse droop power tp = 100 μs; δ = 10 % - 0.1 0.5 dB VSWRload = 2 : 1 αresp(spur) spurious response - - −60 dBc tr rise time - 25 50 ns tf fall time - 6 25 ns 6.1 Ruggedness in class-AB operation The BLA0912-250R is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 36 V; f = 960 MHz to 1215 MHz at rated load power. BLA0912-250R_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 3 March 2010 © NXP B.V. 2010. All rights reserved. 3 of 13 BLA0912-250R NXP Semiconductors Avionics LDMOS power transistor 7. Application information 7.1 Impedance information Table 8. Typical impedance Typical values per section unless otherwise specified. f ZS ZL MHz Ω Ω 960 0.89 − j1.70 1.53 − j1.13 1030 1.37 − j1.23 1.47 − j0.99 1090 2.09 − j1.27 1.38 − j0.85 1140 2.40 − j1.97 1.30 − j0.71 1215 1.51 − j2.61 1.17 − j0.47 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.2 Application circuit L2 L1 C1 L3 L5 L4 C2 C3 C4 L6 L7 L8 C5 001aab085 See Table 9 for details of striplines. Fig 2. BLA0912-250R_1 Product data sheet Layout of class-AB application circuit All information provided in this document is subject to legal disclaimers. Rev. 01 — 3 March 2010 © NXP B.V. 2010. All rights reserved. 4 of 13 BLA0912-250R NXP Semiconductors Avionics LDMOS power transistor Table 9. Layout details See Figure 2. Striplines are on a Rodgers Duroid 6010 Printed-Circuit Board (PCB); εr = 10.2 F/m; thickness = 0.64 mm Component Description Dimensions stripline 5 mm × 0.8 mm Input circuit L1 C1 stripline 1.2 mm × 3.5 mm L2 stripline capacitor pad: 1 mm × 1 mm (1×) curve: width 0.8 mm; angle 90°; radius 0.8 mm (10×) vertical: 3.9 mm × 0.8 mm (2×) vertical: 9.4 mm × 0.8 mm (3×) horizontal: 0.5 mm × 0.8 mm (4×) L3 stripline 3 mm × 2 mm C2 stripline 4 mm × 6.5 mm L4 stripline 5 mm × 1 mm C3 stripline 8.8 mm × 30 mm + 0.2 mm × 13 mm C4 stripline 0.2 mm × 13 mm + 19 mm × 17.1 mm L5 stripline 2.5 mm × 2.3 mm L6 stripline 4 mm × 1 mm C5 stripline 3 mm × 6.6 mm L7 stripline curve: width 0.8 mm; angle 90°; radius 0.8 mm (6×) Output circuit vertical: 2.2 mm × 0.8 mm (2×) vertical: 6 mm × 0.8 mm (1×) horizontal: 1 mm × 0.8 mm (2×) L8 stripline 2.5 mm × 0.8 mm 1/4 λ line stripline curve: width 1 mm; angle 90°; radius 0.8 mm vertical: 5 mm × 1 mm horizontal: 19 mm × 1 mm BLA0912-250R_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 3 March 2010 © NXP B.V. 2010. All rights reserved. 5 of 13 BLA0912-250R NXP Semiconductors Avionics LDMOS power transistor 40 C1 C2 C3 40 C4 C5 C8 C9 C10 R1 R2 60 C7 C6 001aab083 Dimensions in mm. See Table 10 for list of components. Fig 3. Component layout for class-AB application circuit Table 10. List of components See Figure 3. Component BLA0912-250R_1 Product data sheet Description Value Remarks C1, C3, C9 multilayer ceramic chip capacitor 1 nF [1] C2, C6, C10 multilayer ceramic chip capacitor 22 pF [2] C4 tantalum SMD capacitor 47 μF KEMET: T491D476M020AS C5 multilayer ceramic chip capacitor 56 pF [2] C7 multilayer ceramic chip capacitor 47 pF [2] C8 tantalum SMD capacitor 22 μF KEMET: T491D226M020AS R1 SMD resistor 51 Ω 0805 R2 resistor 49.9 Ω Philips: 2333 156 14999 [1] American Technical Ceramics type 100B or capacitor of same quality. [2] American Technical Ceramics type 100A or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 01 — 3 March 2010 © NXP B.V. 2010. All rights reserved. 6 of 13 BLA0912-250R NXP Semiconductors Avionics LDMOS power transistor 8. Test information 8.1 RF performance Typical RF performance measured in common source class-AB test circuit at PL = 250 W and 960 MHz to 1215 MHz frequency band. Th = 25 °C; Zth(j-h) = 0.15 K/W; unless otherwise specified. 001aab078 15 ηD Gp (dB) 13 ηD (%) 45 Gp Gp (dB) (5) 16 (2) 14 (1) 12 35 11 001aab079 18 55 (4) (3) 10 9 25 7 15 8 6 4 5 940 990 1040 1090 1140 1190 f (MHz) 5 1240 2 0 100 200 300 PL(W) Th = 25 °C; VDS = 36 V; IDq = 150 mA; class-AB; tp = 100 μs; δ = 10 %. Th = 25 °C; VDS = 36 V; IDq = 150 mA; class-AB; tp = 100 μs; δ = 10 %. (1) f = 960 MHz (2) f = 1030 MHz (3) f = 1090 MHz (4) f = 1140 MHz (5) f = 1215 MHz Fig 4. Power gain and drain efficiency as function of frequency; typical values BLA0912-250R_1 Product data sheet Fig 5. Power gain as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 3 March 2010 © NXP B.V. 2010. All rights reserved. 7 of 13 BLA0912-250R NXP Semiconductors Avionics LDMOS power transistor 001aab080 300 001aab081 60 (2) (5) (1) 50 250 PL (W) 200 ηD (%) (1) (5) 40 (4) (2) (3) 150 30 100 20 50 10 0 0 0 2 4 6 8 10 12 14 16 Pi (W) 0 Th = 25 °C; VDS = 36 V; IDq = 150 mA; class-AB; tp = 100 μs; δ = 10 %. 50 (1) f = 960 MHz (2) f = 1030 MHz (2) f = 1030 MHz (3) f = 1090 MHz (3) f = 1090 MHz (4) f = 1140 MHz (4) f = 1140 MHz (5) f = 1215 MHz (5) f = 1215 MHz Load power as a function of input power; typical values BLA0912-250R_1 Product data sheet 100 150 200 250 PL (W) 300 Th = 25 °C; VDS = 36 V; IDq = 150 mA; class-AB; tp = 100 μs; δ = 10 %. (1) f = 960 MHz Fig 6. (4) (3) Fig 7. Efficiency as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 3 March 2010 © NXP B.V. 2010. All rights reserved. 8 of 13 BLA0912-250R NXP Semiconductors Avionics LDMOS power transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 8. EUROPEAN PROJECTION Package outline SOT502A BLA0912-250R_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 3 March 2010 © NXP B.V. 2010. All rights reserved. 9 of 13 BLA0912-250R NXP Semiconductors Avionics LDMOS power transistor 10. Abbreviations Table 11. Abbreviations Acronym Description DC Direct Current DME Distance Measuring Equipment JTIDS Joint Tactical Information Distribution System LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor Mode-S Mode Select RF Radio Frequency SMD Surface Mounted Device TACAN TACtical Air Navigation TCAS Traffic Collision Avoidance System VSWR Voltage Standing-Wave Ratio 11. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BLA0912-250R_1 20100303 Product data sheet - - BLA0912-250R_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 3 March 2010 © NXP B.V. 2010. All rights reserved. 10 of 13 BLA0912-250R NXP Semiconductors Avionics LDMOS power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. 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However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. All information provided in this document is subject to legal disclaimers. Rev. 01 — 3 March 2010 © NXP B.V. 2010. All rights reserved. 11 of 13 BLA0912-250R NXP Semiconductors Avionics LDMOS power transistor In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLA0912-250R_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 3 March 2010 © NXP B.V. 2010. All rights reserved. 12 of 13 BLA0912-250R NXP Semiconductors Avionics LDMOS power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 3 March 2010 Document identifier: BLA0912-250R_1