PHILIPS BLF642

BLF642
Broadband power LDMOS transistor
Rev. 2 — 22 July 2011
Product data sheet
1. Product profile
1.1 General description
A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications.
The transistor is suitable for the frequency range HF to 1400 MHz. The excellent
ruggedness and broadband performance of this device makes it ideal for digital
applications.
Table 1.
Typical performance
RF performance at Th = 25 C in a common source test circuit.
f
VDS
PL
Gp
D
IMD
(MHz)
(V)
(W)
(dB)
(%)
(dBc)
CW, class-AB
1300
32
35
19
63
-
2-tone, class-AB
1300
32
17.5
19
48
28
Mode of operation
1.2 Features and benefits
 CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
drain current IDq = 0.2 A :
 Average output power = 35 W
 Power gain = 19 dB
 Drain efficiency = 63 %
 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
drain current IDq = 0.2 A :
 Average output power = 17.5 W
 Power gain = 19 dB
 Drain efficiency = 48 %
 Intermodulation distortion = 28 dBc
 Integrated ESD protection
 Excellent ruggedness
 High power gain
 High efficiency
 Excellent reliability
 Easy power control
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF642
NXP Semiconductors
Broadband power LDMOS transistor
1.3 Applications
 Communication transmitter applications in the HF to 1400 MHz frequency range
 Industrial applications in the HF to 1400 MHz frequency range
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain
2
gate
3
source
Simplified outline
Graphic symbol
1
1
[1]
3
2
3
2
[1]
sym112
Connected to flange
3. Ordering information
Table 3.
Ordering information
Type number Package
Name Description
BLF642
-
Version
flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Conditions
Min
Max
Unit
drain-source voltage
-
65
V
VGS
gate-source voltage
0.5
+11
V
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
200
C
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Rth(j-c)
[1]
BLF642
Product data sheet
Conditions
thermal resistance from junction to case
Tcase = 80 C; PL = 35 W
[1]
Typ
Unit
1.6
K/W
Rth(j-c) is measured under RF conditions.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
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BLF642
NXP Semiconductors
Broadband power LDMOS transistor
6. Characteristics
Table 6.
Characteristics per section
Tj = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA
Min Typ
Max Unit
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 32 V; ID = 50 mA
1.4
1.9
2.4
V
VGSq
gate-source quiescent voltage
VDS = 32 V; IDq = 250 mA
1.5
2.0
2.5
V
IDSS
drain leakage current
VGS = 0 V; VDS = 32 V
-
-
1.4
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
8.0
9.0
-
A
IGSS
gate leakage current
VGS = 10 V; VDS = 0 V
-
-
50
nA
gfs
forward transconductance
VDS = 10 V; ID = 2.5 A
-
3.3
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 1.75 A
-
300
-
m
Ciss
input capacitance
VGS = 0 V; VDS = 32 V;
f = 1 MHz
-
39
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 32 V;
f = 1 MHz
-
15
-
pF
Crs
feedback capacitance
VGS = 0 V; VDS = 32 V;
f = 1 MHz
-
0.84
-
pF
7. Application information
Table 7.
RF performance in a common-source class-AB circuit
Th = 25 C; IDq = 0.2 A.
Mode of operation
CW, class-AB
f
VDS
PL
Gp
D
(MHz)
(V)
(W)
(dB)
(%)
1300
32
35
> 18
> 59
7.1 Ruggedness in class-AB operation
The BLF642 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: VDS = 32 V; f = 1300 MHz at rated load
power.
BLF642
Product data sheet
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Rev. 2 — 22 July 2011
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BLF642
NXP Semiconductors
Broadband power LDMOS transistor
8. Test information
8.1 RF performance
The following figures are measured in a class-AB production test circuit.
8.1.1 1-Tone CW
001aan775
ηD
(%)
GP
(dB)
001aan776
80
22
GP
22
GP
(dB)
60
20
20
(7)
(6)
ηD
18
40
(5)
18
(4)
(3)
(2)
16
14
0
10
20
30
40
PL (W)
50
20
16
0
14
VDS = 32 V; IDq = 200 mA; f = 1300 MHz.
(1)
0
10
20
30
40
PL (W)
50
VDS = 32 V; f = 1300 MHz.
(1) IDq = 50 mA
(2) IDq = 100 mA
(3) IDq = 150 mA
(4) IDq = 200 mA
(5) IDq = 250 mA
(6) IDq = 300 mA
(7) IDq = 350 mA
Fig 1.
Power gain and drain efficiency as function of
load power; typical values
BLF642
Product data sheet
Fig 2.
Power gain as a function of load power;
typical values
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© NXP B.V. 2011. All rights reserved.
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BLF642
NXP Semiconductors
Broadband power LDMOS transistor
8.1.2 2-Tone CW
001aan777
21
GP
(dB)
80
ηD
(%)
GP
001aan778
0
IMD3
(dBc)
60
20
-20
40
19
ηD
(1)
(2)
-40
(3)
20
18
(4)
(5)
(6)
(7)
17
0
10
20
PL(AV) (W)
0
30
-60
VDS = 32 V; IDq = 200 mA; f = 1300 MHz;
carrier spacing = 100 kHz.
0
10
20
PL(AV) (W)
30
VDS = 32 V; f = 1300 MHz; carrier spacing = 100 kHz.
(1) IDq = 50 mA
(2) IDq = 100 mA
(3) IDq = 150 mA
(4) IDq = 200 mA
(5) IDq = 250 mA
(6) IDq = 300 mA
(7) IDq = 350 mA
Fig 3.
Power gain and drain efficiency as function of
average load power; typical values
Fig 4.
Third order intermodulation distortion as a
function of average load power; typical values
8.1.3 Pulsed CW
001aao319
22
80
Gp
(dB)
ηD
(%)
Gp
20
60
ηD
18
40
20
16
14
0
10
20
30
40
PL (W)
50
0
VDS = 32 V; IDq = 200 mA; f = 1300 MHz
Fig 5.
BLF642
Product data sheet
Power gain and drain efficiency as a function of average power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
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BLF642
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Broadband power LDMOS transistor
8.1.4 DVB-T
001aao321
20
Gp
Gp
(dB)
IMDshldr
(dBc)
ηD
(%)
19
001aao320
0
60
40
-20
20
-40
0
-60
12
PAR
(dB)
PAR
8
ηD
18
17
0
5
10
15
20
25
PL(AV) (W)
VDS = 32 V; IDq = 200 mA; f = 1300 MHz.
Fig 6.
4
IMDshldr
0
5
10
15
20
25
PL(AV) (W)
0
VDS = 32 V; IDq = 200 mA; f = 1300 MHz.
Power gain and drain efficiency as function of
average load power; typical values
Fig 7.
PAR and IMDshldr as function of average load
power; typical values
8.2 Test circuit
C11
C6
C5
R1
+
C18
5.9 mm
+
-
-
C13
BLF642
C1
C20
C2
C15
C4
40 mm
28.4 mm
C3
C17
24.4 mm
C16
C14
10.3 mm
37.7 mm
6 mm
C19
C12
001aao322
See Table 8 for a list of components.
Fig 8.
BLF642
Product data sheet
Component layout for class-AB amplifier
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Rev. 2 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
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BLF642
NXP Semiconductors
Broadband power LDMOS transistor
Table 8.
List of components
For production test circuit, see Figure 8 .
Printed-Circuit Board (PCB): Rogers 5880; r = 2.2; height = 0.762 mm; Copper (top/bottom
metallization); thickness copper plating = 35 m.
Component
BLF642
Product data sheet
Description
Value
Remarks
C1
multilayer ceramic chip capacitor
22 pF
[1]
C2
multilayer ceramic chip capacitor
5.1 pF
[2]
C3
multilayer ceramic chip capacitor
4.3 pF
[2]
C4
multilayer ceramic chip capacitor
10 pF
[2]
C5
electrolytic chip capacitor
10 F; 50 V
C6
multilayer ceramic chip capacitor
22 nF
C11, C12
multilayer ceramic chip capacitor
22 pF
[1]
C13, C14
multilayer ceramic chip capacitor
6.2 pF
[1]
C15
multilayer ceramic chip capacitor
4.3 pF
[1]
C16
multilayer ceramic chip capacitor
1.2 pF
[1]
C17
multilayer ceramic chip capacitor
22 pF
[1]
C18, C19
multilayer ceramic chip capacitor
10 F
[3]
C20
electrolytic capacitor
470 F; 63 V
R1
wire resistor
100 
[1]
American Technical Ceramics type 100B or capacitor of same quality.
[2]
American Technical Ceramics type 100A or capacitor of same quality.
[3]
TDK C570X7R1H106KT000N or capacitor of same quality.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
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BLF642
NXP Semiconductors
Broadband power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT467C
D
A
F
3
D1
U1
B
q
c
C
1
E1
H
U2
E
A
w1 M A M B M
p
2
Q
w2 M C M
b
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
E
E1
F
H
p
Q
q
U1
U2
w1
w2
mm
4.67
3.94
5.59
5.33
0.15
0.10
9.25
9.04
9.27
9.02
5.92
5.77
5.97
5.72
1.65
1.40
18.54
17.02
3.43
3.18
2.21
1.96
14.27
20.45
20.19
5.97
5.72
0.25
0.51
inch
0.184 0.220 0.006
0.155 0.210 0.004
0.364 0.365
0.356 0.355
0.233
0.227
0.235 0.065
0.225 0.055
0.73
0.67
0.135 0.087
0.805 0.235
0.562
0.010 0.020
0.125 0.077
0.795 0.225
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
99-12-06
99-12-28
SOT467C
Fig 9.
EUROPEAN
PROJECTION
Package outline SOT467C
BLF642
Product data sheet
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Rev. 2 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
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BLF642
NXP Semiconductors
Broadband power LDMOS transistor
10. Abbreviations
Table 9.
Abbreviations
Acronym
Description
CW
Continuous Waveform
DVB-T
Digital Video Broadcast - Terrestrial
ESD
ElectroStatic Discharge
HF
High Frequency
LDMOS
Laterally Diffused Metal Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
PAR
Peak-to-Average power Ratio
RF
Radio Frequency
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF642 v.2
20110722
Product data sheet
-
BLF642 v.1
Modifications:
BLF642 v.1
BLF642
Product data sheet
•
•
•
•
•
•
The status of this data sheet has been changed to Product data sheet
Table 5 on page 2: The value for Rth(j-c) has been changed.
Table 6 on page 3: Some values have been changed.
Section 8.1.3 on page 5: Section has been added.
Section 8.1.4 on page 6: Section has been added.
Section 8.2 on page 6: Section has been added.
20110308
Objective data sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 July 2011
-
© NXP B.V. 2011. All rights reserved.
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BLF642
NXP Semiconductors
Broadband power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
BLF642
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
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BLF642
NXP Semiconductors
Broadband power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Licenses
ICs with DVB-T or DVB-T2 functionality
Use of this product in any manner that complies with the DVB-T or the
DVB-T2 standard may require licenses under applicable patents of the
DVB-T respectively the DVB-T2 patent portfolio, which license is available
from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under
applicable patents of other parties.
12.5 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF642
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
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BLF642
NXP Semiconductors
Broadband power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
8
8.1
8.1.1
8.1.2
8.1.3
8.1.4
8.2
9
10
11
12
12.1
12.2
12.3
12.4
12.5
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4
RF performance . . . . . . . . . . . . . . . . . . . . . . . . 4
1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
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Date of release: 22 July 2011
Document identifier: BLF642