PHILIPS BLF6G22LS-100

BLF6G22LS-100
Power LDMOS transistor
Rev. 02 — 31 March 2010
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
(MHz)
(V)
(W)
2-carrier W-CDMA
2110 to 2170
28
25
[1]
VDS
PL(AV)
ηD
IMD3
ACPR
(dB)
(%)
(dBc)
(dBc)
18.2
29
−37[1]
−41[1]
Gp
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an IDq of 950 mA:
‹ Average output power = 25 W
‹ Gain = 18.2 dB
‹ Efficiency = 29 %
‹ IMD3 = −37 dBc
‹ ACPR = −41 dBc
„ Easy power control
„ Integrated ESD protection
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (2000 MHz to 2200 MHz)
„ Internally matched for ease of use
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G22LS-100
NXP Semiconductors
Power LDMOS transistor
1.3 Applications
„ RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain
2
gate
3
Simplified outline
Graphic symbol
1
1
3
[1]
source
2
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
BLF6G22LS-100 -
Description
Version
earless flanged LDMOST ceramic package; 2 leads
SOT502B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
65
V
VGS
gate-source voltage
−0.5
+13
V
ID
drain current
-
29
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
225
°C
5. Thermal characteristics
BLF6G22LS-100_2
Product data sheet
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Rth(j-case)
thermal resistance from junction to case
Tcase = 80 °C; PL = 25 W
0.43 K/W
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Rev. 02 — 31 March 2010
Unit
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6. Characteristics
Table 6.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 0.5 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 150 mA
1.4
1.9
2.4
V
VGSq
gate-source quiescent voltage
VDS = 28 V; ID = 900 mA
1.76
2.26
2.76
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
5
μA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
22
28
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
450
nA
gfs
forward transconductance
VDS = 10 V; ID = 7.5 A
-
11
-
S
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 5.25 A
-
0.1
0.16
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 91 MHz
-
2.1
-
pF
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz;
RF performance at VDS = 28 V; IDq = 950 mA; Tcase = 25 °C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
-
25
-
W
PL(AV) = 25 W
17
18.2
-
dB
input return loss
PL(AV) = 25 W
-
−9
−7
dB
ηD
drain efficiency
PL(AV) = 25 W
27.5
29
-
%
IMD3
third-order intermodulation distortion PL(AV) = 25 W
-
−37
−34.5
dBc
ACPR
adjacent channel power ratio
PL(AV) = 25 W
-
−41
−38.5
dBc
PL(AV)
average output power
Gp
power gain
IRL
7.1 Ruggedness in class-AB operation
The BLF6G22LS-100 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 950 mA; PL = 100 W (CW); f = 2170 MHz.
BLF6G22LS-100_2
Product data sheet
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NXP Semiconductors
Power LDMOS transistor
7.2 One-tone CW
001aah695
20
Gp
(dB)
19
Gp
18
60
ηD
(%)
50
40
ηD
17
30
16
20
15
10
14
0
20
40
60
80
100
0
120
140
PL (W)
VDS = 28 V; IDq = 950 mA; f = 2140 MHz.
Fig 1.
One-tone CW power gain and drain efficiency as functions of load power;
typical values
7.3 Two-tone CW
001aah696
20
Gp
(dB)
60
ηD
(%)
Gp
001aah697
−20
IMD
(dBc)
IMD3
−30
IMD5
18
40
−40
ηD
IMD7
−50
16
20
−60
14
0
60
0
180
120
−70
0
PL(PEP) (W)
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
BLF6G22LS-100_2
Product data sheet
120
180
PL(PEP) (W)
VDS = 28 V; IDq = 950 mA; f = 2140 MHz (±100 kHz).
Fig 2.
60
VDS = 28 V; IDq = 950 mA; f = 2140 MHz (±100 kHz).
Fig 3.
Two-tone CW intermodulation distortion as
function of peak envelope load power; typical
values
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BLF6G22LS-100
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Power LDMOS transistor
7.4 2-carrier W-CDMA
001aah698
21
36
ηD
(%)
Gp
(dB)
001aah699
−35
IMD3
ACPR
(dBc)
−40
19
24
Gp
−45
17
12
ηD
IMD3
−50
ACPR
15
0
0
10
20
30
−55
0
PL(AV) (W)
2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
BLF6G22LS-100_2
Product data sheet
20
30
PL(AV) (W)
VDS = 28 V; IDq = 950 mA; f = 2140 MHz (± 5 MHz);
carrier spacing 10 MHz.
Fig 4.
10
VDS = 28 V; IDq = 950 mA; f = 2140 MHz (± 5 MHz);
carrier spacing 10 MHz.
Fig 5.
2-carrier W-CDMA adjacent channel power
ratio and third order intermodulation distortion
as functions of average load power; typical
values
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Power LDMOS transistor
8. Test information
C22
C23
R1
C11
C3
C13
C4
C5
R2
C6
C7
C9
C10
C12
C8
C1
C19
C2
C15 C16
C17
C18
OUTPUT PCB V2
C14
INPUT PCB V1
C21
C20
TB
TB
001aah700
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm.
See Table 8 for list of components.
The drawing is not to scale.
Fig 6.
Component layout
Table 8.
List of components (see Figure 6)
Component
BLF6G22LS-100_2
Product data sheet
Description
Value
Remarks
C1
multilayer ceramic chip capacitor
5.6 pF
[1]
C2
multilayer ceramic chip capacitor
1.0 pF
[1]
C3, C4, C12, C13, multilayer ceramic chip capacitor
C17, C18
1.5 μF
SMD 0805; TDK or
capacitor of same
quality
C5, C6, C10, C15 multilayer ceramic chip capacitor
100 nF
SMD 0603; Murata or
capacitor of same
quality
C7
multilayer ceramic chip capacitor
1.5 pF
[1]
C8
multilayer ceramic chip capacitor
0.6 pF
[1]
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Rev. 02 — 31 March 2010
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BLF6G22LS-100
NXP Semiconductors
Power LDMOS transistor
Table 8.
Component
Description
Value
Remarks
C9, C14
multilayer ceramic chip capacitor
220 nF
SMD 1206; AVX or
capacitor of same
quality
C11, C16
multilayer ceramic chip capacitor
10 pF
[1]
C19
multilayer ceramic chip capacitor
1.1 pF
[1]
C20
multilayer ceramic chip capacitor
0.5 pF
[1]
C21
multilayer ceramic chip capacitor
20 pF
[1]
C22
tantalum capacitor
10 μF; 35 V
C23
electrolytic capacitor
220 μF; 35 V
R1
SMD resistor
3.6 Ω
R2
SMD resistor
5.1 Ω
[1]
BLF6G22LS-100_2
Product data sheet
List of components (see Figure 6) …continued
American Technical Ceramics type 100B or capacitor of same quality.
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Rev. 02 — 31 March 2010
© NXP B.V. 2010. All rights reserved.
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BLF6G22LS-100
NXP Semiconductors
Power LDMOS transistor
9. Package outline
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D1
c
U1
1
L
H
E1
U2
E
2
w2 M D M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
Q
U1
U2
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
1.70
1.45
20.70
20.45
9.91
9.65
0.25
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.045 0.785
0.035 0.745
0.210
0.170
0.067 0.815
0.057 0.805
D
D1
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
03-01-10
07-05-09
SOT502B
Fig 7.
0.390
0.010
0.380
Package outline SOT502B
BLF6G22LS-100_2
Product data sheet
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Power LDMOS transistor
10. Abbreviations
Table 9.
Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
LDMOS
Laterally Diffused Metal Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
PAR
Peak-to-Average power Ratio
PDPCH
transmission Power of the Dedicated Physical CHannel
RF
Radio Frequency
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
11. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF6G22LS-100_2
20100331
Product data sheet
-
BLF6G22LS-100_1
-
-
Modifications:
BLF6G22LS-100_1
BLF6G22LS-100_2
Product data sheet
•
Table 7: Updated several values
20080218
Preliminary data sheet
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12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
BLF6G22LS-100_2
Product data sheet
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
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Rev. 02 — 31 March 2010
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In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF6G22LS-100_2
Product data sheet
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14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 31 March 2010
Document identifier: BLF6G22LS-100_2