BLA6H1011-600 LDMOS avionics power transistor Rev. 01 — 22 April 2010 Product data sheet 1. Product profile 1.1 General description 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 50 μs; δ = 2 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f VDS PL Gp ηD tr tf (MHz) (V) (W) (dB) (%) (ns) (ns) 1030 to 1090 48 600 17 52 11 5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 mA, a tp of 50 μs with δ of 2 %: Output power = 600 W Power gain = 17 dB Efficiency = 52 % Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1030 MHz to 1090 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) BLA6H1011-600 NXP Semiconductors LDMOS avionics power transistor 1.3 Applications 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description 1 drain1 2 drain2 3 gate1 4 gate2 5 Simplified outline 1 Graphic symbol 2 1 5 3 3 4 5 4 [1] source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLA6H1011-600 Package Name Description Version - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 100 V VGS gate-source voltage 0.5 13 V ID drain current - 72 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C Typ Unit tp = 100 μs; δ = 10 % 0.06 K/W tp = 50 μs; δ = 2 % 0.035 K/W 5. Thermal characteristics Table 5. BLA6H1011-600_1 Product data sheet Thermal characteristics Symbol Parameter Conditions Zth(j-case) transient thermal impedance from junction to case Tcase = 85 °C; PL = 600 W All information provided in this document is subject to legal disclaimers. Rev. 01 — 22 April 2010 © NXP B.V. 2010. All rights reserved. 2 of 13 BLA6H1011-600 NXP Semiconductors LDMOS avionics power transistor 6. Characteristics Table 6. DC characteristics Tj = 25 °C; per section unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA Min Typ Max Unit 100 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 270 mA 1.25 1.8 2.25 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.4 μA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 32 42 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 270 mA 1.6 3 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 9.5 A - 100 169 mΩ Table 7. RF characteristics Mode of operation: pulsed RF; tp = 50 μs; δ = 2 %; RF performance at VDS = 48 V; IDq = 100 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit PL output power 600 - - W VDS drain-source voltage PL = 600 W - - 48 V Gp power gain PL = 600 W 16 17 - dB RLin input return loss PL = 600 W 8 12 - dB PL(1dB) output power at 1 dB gain compression - 700 - W ηD drain efficiency PL = 600 W 47 52 - % Pdroop(pulse) pulse droop power PL = 600 W - 0 0.3 dB tr rise time PL = 600 W - 11 30 ns tf fall time PL = 600 W - 5 30 ns 6.1 Ruggedness in class-AB operation The BLA6H1011-600 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 48 V; IDq = 100 mA; PL = 600 W; tp = 50 μs; δ = 2 %; f = 1030 MHz. BLA6H1011-600_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 22 April 2010 © NXP B.V. 2010. All rights reserved. 3 of 13 BLA6H1011-600 NXP Semiconductors LDMOS avionics power transistor 7. Application information 7.1 Impedance information Table 8. Typical impedance Typical values per section unless otherwise specified. f ZS ZL MHz Ω Ω 1030 1.702 − j1.816 0.977 + j0.049 1060 1.815 − j1.760 1.033 + j0.221 1090 1.912 − j1.751 1.086 + j0.379 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.2 Performance curves 001aal832 20 Gp (dB) (1) ηD (%) (2) 16 001aal833 60 (1) (2) 40 12 8 20 4 0 0 0 300 600 900 0 200 PL (W) (1) f = 1030 MHz (2) f = 1090 MHz (2) f = 1090 MHz Power gain as a function of load power; typical values Product data sheet 800 Th = 25 °C; VDS = 48 V; IDq = 100 mA; tp = 50 μs; δ = 2 %. (1) f = 1030 MHz BLA6H1011-600_1 600 PL (W) Th = 25 °C; VDS = 48 V; IDq = 100 mA; tp = 50 μs; δ = 2 %. Fig 2. 400 Fig 3. Drain efficiency as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 22 April 2010 © NXP B.V. 2010. All rights reserved. 4 of 13 BLA6H1011-600 NXP Semiconductors LDMOS avionics power transistor 001aal834 20 RLin (dB) 001aal835 800 (1) PL (W) (2) 16 600 12 400 8 200 4 0 1025 0 1035 1045 1055 1065 1075 1085 1095 f (MHz) 0 6 12 18 Pi (W) Th = 25 °C; PL = 600 W; VDS = 48 V; IDq = 100 mA; tp = 50 μs; δ = 2 %. Th = 25 °C; VDS = 48 V; IDq = 100 mA; tp = 50 μs; δ = 2 %. (1) f = 1030 MHz (2) f = 1090 MHz Fig 4. Input return loss as a function of frequency; typical values Fig 5. 001aal836 20 Gp (dB) 001aal837 60 ηD (%) (1) 16 Load power as a function of input power; typical values (2) (1) 40 (2) 12 8 20 4 0 0 0 200 400 600 800 0 200 PL (W) (1) f = 1030 MHz (2) f = 1090 MHz (2) f = 1090 MHz Power gain as a function of load power; typical values Product data sheet 800 Th = 65 °C; VDS = 48 V; IDq = 100 mA; tp = 50 μs; δ = 2 %. (1) f = 1030 MHz BLA6H1011-600_1 600 PL (W) Th = 65 °C; VDS = 48 V; IDq = 100 mA; tp = 50 μs; δ = 2 %. Fig 6. 400 Fig 7. Drain efficiency as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 22 April 2010 © NXP B.V. 2010. All rights reserved. 5 of 13 BLA6H1011-600 NXP Semiconductors LDMOS avionics power transistor 001aal838 800 PL (W) (1) (2) 600 400 200 0 0 4 8 12 16 20 Pi (W) Th = 65 °C; VDS = 48 V; IDq = 100 mA; tp = 50 μs; δ = 2 %. (1) f = 1030 MHz (2) f = 1090 MHz Fig 8. Load power as a function of input power; typical values 7.3 Curves measured under Mode-S ELM pulse-conditions 001aal839 21 Gp (dB) 001aal840 80 ηD (%) 19 (1) (1) (2) 60 (2) 17 (3) 40 15 20 13 11 0 0 200 400 600 800 0 200 400 PL (W) 600 800 PL (W) f = 1030 MHz; IDq = 100 mA. f = 1030 MHz; IDq = 100 mA. (1) Th = −40 °C (1) Th = 25 °C (2) Th = +25 °C (2) Th = 65 °C (3) Th = +65 °C Fig 9. Power gain as a function of load power; typical values BLA6H1011-600_1 Product data sheet Fig 10. Drain efficiency as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 22 April 2010 © NXP B.V. 2010. All rights reserved. 6 of 13 BLA6H1011-600 NXP Semiconductors LDMOS avionics power transistor 001aal841 800 (1) PL (W) (2) (3) 600 400 200 0 0 4 8 12 16 Pi (W) f = 1030 MHz; IDq = 100 mA. (1) Th = −40 °C (2) Th = +25 °C (3) Th = +65 °C Fig 11. Load power as a function of input power; typical values 8. Test information Table 9. List of components For test circuit see Figure 12. Component BLA6H1011-600_1 Product data sheet Description Value Remarks [1] C1, C4, C7 multilayer ceramic chip capacitor 82 pF C2 multilayer ceramic chip capacitor 22 μF; 35 V C3, C5, C8 multilayer ceramic chip capacitor 39 pF [2] C6, C9 multilayer ceramic chip capacitor 1 nF [2] C10 multilayer ceramic chip capacitor 20 nF [3] C11 electrolytic capacitor 47 μF; 63 V R1 SMD resistor 56 Ω R2 metal film resistor 51 Ω R3 resistor 11 Ω [1] American Technical Ceramics type 800B or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. [3] American Technical Ceramics type 200B or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 01 — 22 April 2010 0603 © NXP B.V. 2010. All rights reserved. 7 of 13 BLA6H1011-600 NXP Semiconductors LDMOS avionics power transistor C8 R3 C3 C9 C2 C4 C5 C11 C6 R1 C10 R2 C7 C1 001aal842 Printed-Circuit Board (PCB): Duroid 6006; εr = 6.15 F/m; thickness = 0.64 mm; thickness copper plating = 35 μm. See Table 9 for a list of components. Fig 12. Component layout for class-AB production test circuit BLA6H1011-600_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 22 April 2010 © NXP B.V. 2010. All rights reserved. 8 of 13 BLA6H1011-600 NXP Semiconductors LDMOS avionics power transistor 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q 3.30 3.05 2.26 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 00-03-03 10-02-02 SOT539A Fig 13. Package outline SOT539A BLA6H1011-600_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 22 April 2010 © NXP B.V. 2010. All rights reserved. 9 of 13 BLA6H1011-600 NXP Semiconductors LDMOS avionics power transistor 10. Abbreviations Table 10. Abbreviations Acronym Description IFF Identification Friend or Foe LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency SMD Surface Mounted Device TCAS Traffic Collision Avoidance System VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLA6H1011-600_1 20100422 Product data sheet - - BLA6H1011-600_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 22 April 2010 © NXP B.V. 2010. All rights reserved. 10 of 13 BLA6H1011-600 NXP Semiconductors LDMOS avionics power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. 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In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the BLA6H1011-600_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 22 April 2010 © NXP B.V. 2010. All rights reserved. 11 of 13 BLA6H1011-600 NXP Semiconductors LDMOS avionics power transistor product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLA6H1011-600_1 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 22 April 2010 © NXP B.V. 2010. All rights reserved. 12 of 13 BLA6H1011-600 NXP Semiconductors LDMOS avionics power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 7.3 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Performance curves . . . . . . . . . . . . . . . . . . . . . 4 Curves measured under Mode-S ELM pulse-conditions . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 22 April 2010 Document identifier: BLA6H1011-600_1