Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. PINNING - SOT429 (TO247) PIN QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX. UNIT VDS ID Ptot RDS(ON) BUK436 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance -200A 200 19 125 0.16 -200B 200 17 125 0.2 V A W Ω PIN CONFIGURATION SYMBOL DESCRIPTION 1 gate 2 drain 3 source tab BUK436W-200A/B drain d g 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS VDGR ±VGS Drain-source voltage Drain-gate voltage Gate-source voltage RGS = 20 kΩ - - 200 200 30 V V V ID ID IDM Drain current (DC) Drain current (DC) Drain current (pulse peak value) Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C - Ptot Tstg Tj Total power dissipation Storage temperature Junction Temperature Tmb = 25 ˚C - - 55 - -200A 19 12 76 -200B 17 11 68 A A A 125 150 150 W ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient Rth j-a July 1997 CONDITIONS 1 MIN. TYP. MAX. UNIT - - 1.0 K/W - 45 - K/W Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor BUK436W-200A/B STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance VGS = 0 V; ID = 0.25 mA 200 - - V VDS = VGS; ID = 1 mA VDS = 200 V; VGS = 0 V; Tj = 25 ˚C VDS = 200 V; VGS = 0 V; Tj =125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; BUK436-200A BUK436-200B ID = 10 A 2.1 - 3.0 1 0.1 10 0.15 0.17 4.0 10 1.0 100 0.16 0.20 V µA mA nA Ω Ω MIN. TYP. MAX. UNIT 8.5 16 - S VGS(TO) IDSS IDSS IGSS RDS(ON) DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS gfs Forward transconductance VDS = 25 V; ID = 10 A Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1500 300 60 2000 400 100 pF pF pF td on tr td off tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 30 V; ID = 3 A; VGS = 10 V; Rgen = 50 Ω; RGS = 50 Ω - 20 40 145 50 30 60 185 70 ns ns ns ns Ld Internal drain inductance - 5 - nH Ld Internal drain inductance - 5 - nH Ls Internal source inductance Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad - 12.5 - nH REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IDR - - - 19 A IDRM VSD Continuous reverse drain current Pulsed reverse drain current Diode forward voltage IF = 19 A ; VGS = 0 V - 1.0 76 1.7 A V trr Qrr Reverse recovery time Reverse recovery charge IF = 19 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 30 V - 180 2.5 - ns µC July 1997 2 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor Normalised Power Derating PD% 120 BUK436W-200A/B Zth j-mb / (K/W) 10 BUKx56-lv 110 100 90 D= 1 80 0.5 70 0.2 0.1 0.05 60 50 0.1 0.02 40 30 0.01 tp PD D= 0 20 10 0 0 20 40 60 80 100 Tmb / C 120 140 1E-05 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) 120 1E-03 t/s 1E-01 1E+01 Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T Normalised Current Derating ID% t T 0.001 tp T 40 BUK456-200A 7 6 ID / A 20 110 10 100 90 30 80 70 60 50 20 5 VGS / V = 40 30 10 20 10 4 0 0 0 20 40 60 80 Tmb / C 100 120 140 BUK436-200A,B ID / A 1.0 ID S/ N) = VD 10 4 6 8 10 12 VDS / V 4 0.8 16 18 20 BUK456-200A 4.5 5 VGS / V = 5.5 100 us A B 14 RDS(ON) / Ohm tp = 10 us (O S RD 2 Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V 100 0 0.6 DC 6 1 ms 7 0.4 10 ms 1 100 ms 10 0.2 0 0.1 1 10 100 VDS / V 1000 Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp July 1997 0 10 20 ID / A 30 40 Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS 3 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor 40 BUK436W-200A/B ID / A VGS(TO) / V BUK456-200A max. 4 30 typ. 3 min. 20 2 Tj / C = 10 0 1 25 150 0 0 2 4 6 8 10 -60 -40 -20 0 VGS / V gfs / S 40 60 Tj / C 80 100 120 140 Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj 20 20 BUK456-200A SUB-THRESHOLD CONDUCTION ID / A 1E-01 1E-02 15 2% 1E-03 typ 98 % 10 1E-04 5 0 1E-05 1E-06 0 10 20 ID / A 30 40 0 Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V 2 VGS / V 3 4 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS Normalised RDS(ON) = f(Tj) a 2.4 2.2 2.0 1.8 1.6 1.4 1 10000 BUK4y6-200 C / pF Ciss 1000 1.2 1.0 0.8 0.6 0.4 0.2 Coss 100 Crss 0 -60 -40 -20 0 20 40 60 Tj / C 80 10 100 120 140 0 40 VDS / V Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 10 A; VGS = 10 V July 1997 20 Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 4 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor BUK436W-200A/B BUK456-200 VGS / V 12 40 IF / A BUK456-200A VDS / V =40 10 30 8 Tj / C = 150 160 6 25 20 4 10 2 0 0 10 20 QG / nC 30 0 40 0 Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 19 A; parameter VDS July 1997 1 VSDS / V 2 Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj 5 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor BUK436W-200A/B MECHANICAL DATA Dimensions in mm 5.3 max 16 max 1.8 Net Mass: 5 g 5.3 o 3.5 max 7.3 3.5 21 max seating plane 15.5 max 2.5 15.5 min 4.0 max 1 2 3 0.9 max 2.2 max 1.1 3.2 max 5.45 0.4 M 5.45 Fig.15. SOT429 (TO247); pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT429 envelopes. 3. Epoxy meets UL94 V0 at 1/8". July 1997 6 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor BUK436W-200A/B DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1997 7 Rev 1.000