Philips Semiconductors Preliminary Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. PINNING - TO220AB PIN QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX. UNIT VDS ID Ptot Tj RDS(ON) BUK451 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance -100A 100 3.0 40 175 0.85 -100B 100 3.0 40 175 1.1 V A W ˚C Ω PIN CONFIGURATION DESCRIPTION 1 gate 2 drain 3 source tab BUK451-100A/B SYMBOL d tab g drain s 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS VDGR ±VGS Drain-source voltage Drain-gate voltage Gate-source voltage RGS = 20 kΩ - - 100 100 30 V V V ID ID IDM Drain current (DC) Drain current (DC) Drain current (pulse peak value) Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C - Ptot Tstg Tj Total power dissipation Storage temperature Junction Temperature Tmb = 25 ˚C - - 55 - -100A 3.0 3.0 12 -100B 3.0 3.0 12 40 175 175 A A A W ˚C ˚C Philips Semiconductors Preliminary Specification PowerMOS transistor BUK451-100A/B THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient Rth j-a CONDITIONS MIN. TYP. MAX. UNIT - - 3.75 K/W - 60 - K/W STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance VGS = 0 V; ID = 0.25 mA 100 - - V VDS = VGS; ID = 1 mA VDS = 100 V; VGS = 0 V; Tj = 25 ˚C VDS = 100 V; VGS = 0 V; Tj =125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; BUK451-100A ID = 2.5 A BUK451-100B 2.1 - 3.0 1 0.1 10 0.75 0.90 4.0 10 1.0 100 0.85 1.10 V µA mA nA Ω Ω MIN. TYP. MAX. UNIT VGS(TO) IDSS IDSS IGSS RDS(ON) DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS gfs Forward transconductance VDS = 25 V; ID = 2.5 A 1.3 1.7 - S Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 160 45 16 240 60 25 pF pF pF td on tr td off tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 30 V; ID = 3 A; VGS = 10 V; RGS = 50 Ω; Rgen = 50 Ω - 4 15 10 10 6 25 20 20 ns ns ns ns Ld Internal drain inductance - 3.5 - nH Ld Internal drain inductance - 4.5 - nH Ls Internal source inductance Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad - 7.5 - nH MIN. TYP. MAX. UNIT REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS IDR - - - 3.0 A IDRM VSD Continuous reverse drain current Pulsed reverse drain current Diode forward voltage IF = 3.0 A ; VGS = 0 V - 1.1 12 1.4 A V trr Qrr Reverse recovery time Reverse recovery charge IF = 3.0 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 30 V - 100 0.25 - ns µC January 1980 Philips Semiconductors Preliminary Specification PowerMOS transistor 120 BUK451-100A/B Normalised Power Derating PD% 10 Zth j-mb / (K/W) 110 D= 100 0.5 90 80 1 0.2 70 0.1 60 0.05 50 40 0.02 0.1 30 tp PD 0 D= tp T 20 10 t T 0 0 20 40 60 80 100 Tmb / C 120 140 160 180 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) ID / % 0.01 1E-05 1E-03 t/s 1E-01 1E+01 Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T Normalised Current Derating 120 ID / A 10 BUK4y1-100 110 100 15 10 VGS / V = 8 90 A 80 9 B 70 6 8 60 50 4 7 40 30 2 20 6 10 5 0 0 20 40 60 80 100 Ths / C 120 140 160 180 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V 100 0 5 A /ID 10 )= tp = B 4 8 12 VDS / V 16 20 Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS BUK451-100 ID / A 0 ID / A 5 BUK4y1-100 6 7 4 VGS / V = 8 10 us S VD ON S( 100 us RD 3 9 10 1 ms 1 10 ms 100 ms DC 15 2 1 0 0.1 1 10 100 VDS / V Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp January 1980 0 2 4 6 8 10 VDS / V Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS Philips Semiconductors Preliminary Specification PowerMOS transistor 10 BUK451-100A/B ID / A VGS(TO) / V BUK4y1-100 max. 4 Tj / C = 25 8 typ. 3 150 6 min. 2 4 1 2 0 0 0 2 4 6 8 VGS / V 10 12 14 -60 Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj 2 gfs / S BUK4y1-100A -20 20 60 Tj / C 100 140 180 Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS SUB-THRESHOLD CONDUCTION ID / A 1E-01 1E-02 1.5 2% 1E-03 typ 98 % 1 1E-04 0.5 1E-05 1E-06 0 0 2 4 ID / A 6 8 0 Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V 2.4 Normalised RDS(ON) = f(Tj) a 1 2 VGS / V 3 4 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS 1000 BUK4y1-100A C / pF 2.2 2.0 1.8 1.6 Ciss 1.4 1.2 100 1.0 0.8 Coss 0.6 0.4 0.2 0 -60 -20 20 60 Tj / C 100 140 180 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 2.5 A; VGS = 5 V January 1980 Crss 10 0 20 40 VDS / V Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz Philips Semiconductors Preliminary Specification PowerMOS transistor 15 BUK451-100A/B BUK4y1-100A VGS / V 10 IF / A BUK4y1-100A 9 8 VDS / V = 20 7 10 80 6 5 Tj / C = 150 4 5 3 25 2 1 0 0 0 2 4 6 QG / nC Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 3 A; parameter VDS January 1980 0 0.2 0.4 0.6 0.8 1 VSDS / V 1.2 1.4 1.6 Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj Philips Semiconductors Preliminary Specification PowerMOS transistor BUK451-100A/B MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.15. TO220AB; pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". January 1980 Philips Semiconductors Preliminary Specification PowerMOS transistor BUK451-100A/B DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1980