74AUP1T1326 Low-power dual supply buffer/line driver; 3-state Rev. 01 — 20 January 2009 Product data sheet 1. General description The 74AUP1T1326 is a high-performance, low-power, low-voltage, single-bit, dual supply buffer/line driver with output enable circuitry. The 74AUP1T1326 is designed for logic-level translation applications and combines the functions of the 74AUP1G32 and 74AUP1G126. The buffer/line driver is controlled by two output enable Schmitt trigger inputs (1OE and 2OE) through an OR-gate. The output enable inputs accept standard input signals and are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. The output of the OR-gate is also available at output 1Y. The output enable inputs (1OE and 2OE) switch at different points for positive and negative-going signals. The difference between the positive voltage VT+ and the negative voltage VT− is defined as the input hysteresis voltage VH. Both VCC(A) and VCC(B) can be supplied at any voltage between 1.1 V and 3.6 V making the device suitable for interfacing between any of the low voltage nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V) with compatible input levels. Pins 1OE, 2OE and 1Y are referenced to VCC(A) and pins A and 2Y are referenced to VCC(B). A logic LOW on both output enable pins causes the output 2Y to assume a high-impedance OFF-state. The device ensures low static and dynamic power consumption and is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the outputs, preventing any damaging backflow current through the device when it is powered down. 2. Features n Wide supply voltage range: u VCC(A): 1.1 V to 3.6 V; VCC(B): 1.1 V to 3.6 V. n High noise immunity n Complies with JEDEC standards: u JESD8-7 (1.2 V to 1.95 V) u JESD8-5 (1.8 V to 2.7 V) u JESD8-B (2.7 V to 3.6 V) n ESD protection: u HBM JESD22-A114E Class 2A exceeds 2000 V u MM JESD22-A115-A exceeds 200 V u CDM JESD22-C101C exceeds 1000 V n Low static power consumption; ICC = 0.9 µA (maximum) n Latch-up performance exceeds 100 mA per JESD 78 Class II n Inputs accept voltages up to 3.6 V 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state n n n n Low noise overshoot and undershoot < 10 % of VCC IOFF circuitry provides partial Power-down mode operation Multiple package options Specified from −40 °C to +85 °C 3. Ordering information Table 1. Ordering information Type number 74AUP1T1326GT Package Temperature range Name Description −40 °C to +85 °C plastic extremely thin small outline package; no leads; SOT833-1 8 terminals; body 1 x 1.95 x 0.5 mm XSON8 Version 4. Marking Table 2. Marking Type number Marking code 74AUP1T1326GT p31 5. Functional diagram 1OE 5 7 Rpd 2OE 1Y 6 Rpd VCC(A) A 2 8 2Y VCC(B) 001aaj293 Rpd = Internal pull-down resistor. Fig 1. Logic symbol 74AUP1T1326_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 2 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state 6. Pinning information 6.1 Pinning 74AUP1T1326 VCC(B) 1 8 2Y A 2 7 1Y VCC(A) 3 6 2OE GND 4 5 1OE 001aaj294 Transparent top view Fig 2. Pin configuration SOT833-1 (XSON8) 6.2 Pin description Table 3. Pin description Symbol Pin Description VCC(B) 1 supply voltage B A 2 data input VCC(A) 3 supply voltage A GND 4 ground (0 V) 1OE 5 output enable input (Schmitt trigger input) 2OE 6 output enable input (Schmitt trigger input) 1Y 7 data output 2Y 8 data output 7. Functional description Table 4. Function table[1] Input Output 1OE 2OE A 1Y 2Y L L X L Z X H L H L X H H H H H X L H L H X H H H [1] H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state. 74AUP1T1326_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 3 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC(A) supply voltage A VCC(B) supply voltage B IIK input clamping current VI input voltage output clamping current IOK Conditions Min Max Unit −0.5 +4.6 V −0.5 +4.6 V -50 - mA [1] −0.5 +4.6 V VO > VCCO or VO < 0 V [2] - −50 mA −0.5 +4.6 V - ±20 mA VI < 0 V VO output voltage Active mode and Power-down mode [1] IO output current VO = 0 V to VCCO [2] ICC supply current - 50 mA IGND ground current -50 - mA Tstg storage temperature −65 +150 °C Ptot total power dissipation - 250 mW [1] Tamb = −40 °C to +85 °C [3] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] VCCO is the supply voltage associated with an output pin. [3] For XSON8 package: above 45 °C the value of Ptot derates linearly with 2.4 mW/K. 9. Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter VCC(A) Min Max Unit supply voltage A 1.1 3.6 V VCC(B) supply voltage B 1.1 3.6 V VI input voltage VO output voltage Tamb ambient temperature ∆t/∆V input transition rise and fall rate Conditions [1] 3.6 V VCCO V −40 +85 °C input A; VCCI = 1.1 V to 3.6 V [2] - 200 ns/V input nOE; VCCI = 1.1 V to 3.6 V [2] - 30 ms/V [1] VCCO is the supply voltage associated with an output pin. [2] VCCI is the supply voltage associated with an input pin. 74AUP1T1326_1 Product data sheet 0 0 © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 4 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter 25 °C Conditions −40 °C to +85 °C Unit Min Typ Max Min Max 0.65VCCI - - 0.65VCCI - V 1.6 - - 1.6 - V 2.0 - - 2.0 - V - - 0.35VCCI - 0.35VCCI V VCCI = 2.3 V to 2.7 V - - 0.7 - 0.7 V VCCI = 3.0 V to 3.6 V - - 0.9 - 0.9 V - - VCCO − 0.1 - V Tamb = 25 °C VIH [1][3] HIGH-level input A; input voltage V CCI = 1.1 V to 1.95 V VCCI = 2.3 V to 2.7 V VCCI = 3.0 V to 3.6 V VIL VOH [1][3] LOW-level input A; input voltage V CCI = 1.1 V to 1.95 V HIGH-level output voltage VI = VIL or VI or VI = VT+ or VT− IO = −20 µA; VCCO = 1.1 V to 3.6 V [2] VCCO − 0.1 IO = −1.1 mA; VCCO = 1.1 V [2] 0.825 - - 0.825 - V IO = −1.7 mA; VCCO = 1.4 V 1.05 - - 1.05 - V IO = −3 mA; VCCO = 1.65 V 1.2 - - 1.2 - V IO = −2.3 mA; VCCO = 2.3 V 1.97 - - 1.97 - V IO = −4.0 mA; VCCO = 2.3 V 2.0 - - 2.0 - V IO = −2.7 mA; VCCO = 3.0 V 2.67 - - 2.67 - V 2.48 - - 2.48 - V IO = 20 µA; VCCO = 1.1 V to 3.6 V - - 0.10 - 0.10 V IO = 1.1 mA; VCCO = 1.1 V - - 0.275 - 0.275 V IO = 1.7 mA; VCCO = 1.4 V - - 0.35 - 0.35 V IO = 3.0 mA; VCCO = 1.65 V - - 0.45 - 0.45 V IO = 2.3 mA; VCCO = 2.3 V - - 0.33 - 0.33 V IO = 4.0 mA; VCCO = 2.3 V - - 0.40 - 0.40 V IO = 2.7 mA; VCCO = 3.0 V - - 0.33 - 0.33 V IO = −6.0 mA; VCCO = 3.0 V VOL LOW-level output voltage VI = VIL or VI or VI = VT+ or VT− [2] IO = 6.0 mA; VCCO = 3.0 V II input leakage current input A; VI = 0 V to 3.6 V; VCCI = 1.1 V to 3.6 V IOZ OFF-state output current output 2Y; VI = VIH or VIL; VO = 0 V to 3.6 V; VCC(A) = 1.1 V to 3.6 V; VCC(B) = 1.1 V to 3.6 V [1] - - 0.40 - 0.40 V - - ±0.1 - ±0.5 µA - - ±0.1 - ±0.5 µA 74AUP1T1326_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 5 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter IOFF ICC(A) ICC(B) ∆ICC Unit Typ Max Min Max 1Y; VCC(A) = 0 V; VO = 0 V to 3.6 V; VCC(B) = 1.1 V to 3.6 V - - ±0.2 - ±0.5 µA A, 2Y; VCC(B) = 0 V; VI or VO = 0 V to 3.6 V; VCC(A) = 1.1 V to 3.6 V - - ±0.2 - ±0.5 µA additional power-off leakage current 1Y; VCC(A) = 0 V to 0.2 V; VO = 0 V to 3.6 V; VCC(B) = 1.1 V to 3.6 V - - ±0.2 - ±0.6 µA A, 2Y; VCC(B) = 0 V to 0.2 V; VI or VO = 0 V to 3.6 V; VCC(A) = 1.1 V to 3.6 V - - ±0.2 - ±0.6 µA supply current A VI = 0 V or VCC(A); IO = 0 A - - 0.5 - 0.9 µA VCC(A) = VCC(B) = 1.1 V to 3.6 V - - 0.5 - 0.9 µA supply current B additional supply current Rpd pull-down resistance CI input capacitance output capacitance [1] VCC(A) = 1.1 V to 3.6 V; VCC(B) = 0 V to 3.6 V VI = 0 V or VCC(B); IO = 0 A [1] VCC(A) = 1.71 V; VCC(B) = 2.6 V - - 350 - 500 µA nOE; VCC(A) = VCC(B) = 3.3 V; VI = VCC(A) − 0.6 V - - 40 - 50 µA A; VCC(A) = VCC(B) = 3.3 V; VI = VCC(B) − 0.6 V; - - 40 - 50 µA - - - - 1 µA 151 281 428 150 435 kΩ A; VI = GND to 3.6 V; nOE = GND; VCC(A) = VCC(B) = 1.1 V to 3.6 V CO −40 °C to +85 °C Min power-off leakage current ∆IOFF 25 °C Conditions [4] input A; VI = 0 V or VCCI; VCCI = 1.1 V to 3.6 V [1] - 0.9 - - - pF input nOE; VI = 0 V or VCCI; VCCI = 1.1 V to 3.6 V [1] - 0.8 - - - pF 1Y; VO = GND; VCCO = 0 V [2] - 1.7 - - - pF 2Y enabled; VO = GND; VCCO = 0 V [2] - 1.7 - - - pF 2Y disabled; VCCO = 0 V to 3.6 V; VO = GND or VCCO [2] - 1.5 - - - pF [1] VCCI is the supply voltage associated with the input pin. [2] VCCO is the supply voltage associated with the output pin. [3] For VCCI values not specified in the data sheet: minimum VIH = 0.7 × VCCI and maximum VIL = 0.3 × VCCI. [4] To show ICC remains very low when the input-disable feature is enabled. 74AUP1T1326_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 6 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 5. Symbol Parameter 25 °C Conditions −40 °C to +85 °C Unit Min Typ[1] Max Min Max VCC(B) = 1.1 V to 1.3 V 3.0 5.4 9.5 2.7 9.7 ns VCC(B) = 1.4 V to 1.6 V 2.4 3.8 5.7 2.1 6.1 ns VCC(B) = 1.65 V to 1.95 V 1.9 3.1 4.5 1.7 5.0 ns VCC(B) = 2.3 V to 2.7 V 1.5 2.3 3.4 1.3 3.8 ns VCC(B) = 3.0 V to 3.6 V 1.2 2.1 3.0 1.0 3.3 ns CL = 5 pF tpd propagation delay A to 2Y; see Figure 3 [2] nOE to 1Y; see Figure 3 VCC(A) = 1.1 V to 1.3 V 3.4 5.6 9.3 3.2 9.5 ns VCC(A) = 1.4 V to 1.6 V 2.8 4.2 5.9 2.6 6.3 ns VCC(A) = 1.65 V to 1.95 V 2.4 3.5 4.9 2.2 5.3 ns VCC(A) = 2.3 V to 2.7 V 2.2 2.9 3.9 2.0 4.1 ns VCC(A) = 3.0 V to 3.6 V 1.9 2.6 3.4 1.8 3.7 ns 3.4 6.2 11.0 3.0 11.4 ns CL = 10 pF tpd propagation delay A to 2Y; see Figure 3 [2] VCC(B) = 1.1 V to 1.3 V VCC(B) = 1.4 V to 1.6 V 2.7 4.4 6.6 2.4 7.1 ns VCC(B) = 1.65 V to 1.95 V 2.3 3.6 5.3 2.0 5.8 ns VCC(B) = 2.3 V to 2.7 V 1.8 2.8 4.1 1.5 4.5 ns VCC(B) = 3.0 V to 3.6 V 1.6 2.6 3.8 1.3 4.2 ns VCC(A) = 1.1 V to 1.3 V 3.7 6.4 10.8 3.4 11.1 ns VCC(A) = 1.4 V to 1.6 V 3.1 4.7 6.8 2.8 7.2 ns VCC(A) = 1.65 V to 1.95 V 2.9 4.0 5.6 2.5 6.1 ns VCC(A) = 2.3 V to 2.7 V 2.5 3.4 4.6 2.2 4.9 ns VCC(A) = 3.0 V to 3.6 V 2.3 3.1 4.1 2.1 4.5 ns nOE to 1Y; see Figure 3 74AUP1T1326_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 7 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 5. Symbol Parameter 25 °C Conditions −40 °C to +85 °C Unit Min Typ[1] Max Min Max VCC(B) = 1.1 V to 1.3 V 3.8 6.9 12.5 3.4 12.9 ns VCC(B) = 1.4 V to 1.6 V 3.2 4.9 7.5 2.8 8.1 ns VCC(B) = 1.65 V to 1.95 V 2.7 4.0 6.0 2.3 6.5 ns VCC(B) = 2.3 V to 2.7 V 2.2 3.2 4.8 1.8 5.3 ns VCC(B) = 3.0 V to 3.6 V 1.8 2.9 4.4 1.6 4.8 ns 4.2 7.2 12.4 3.8 12.7 ns CL = 15 pF tpd propagation delay A to 2Y; see Figure 3 [2] nOE to 1Y; see Figure 3 VCC(A) = 1.1 V to 1.3 V VCC(A) = 1.4 V to 1.6 V 3.6 5.2 7.6 3.3 8.2 ns VCC(A) = 1.65 V to 1.95 V 3.1 4.5 6.3 2.7 6.9 ns VCC(A) = 2.3 V to 2.7 V 2.8 3.8 5.3 2.5 5.6 ns VCC(A) = 3.0 V to 3.6 V 2.5 3.5 4.8 2.3 5.2 ns VCC(B) = 1.1 V to 1.3 V 4.8 9.0 16.6 4.2 17.3 ns VCC(B) = 1.4 V to 1.6 V 4.0 6.3 9.8 3.4 10.6 ns VCC(B) = 1.65 V to 1.95 V 3.5 5.1 7.8 3.0 8.6 ns VCC(B) = 2.3 V to 2.7 V 2.7 4.2 6.2 2.4 6.8 ns VCC(B) = 3.0 V to 3.6 V 2.5 3.9 5.9 2.3 6.4 ns CL = 30 pF tpd propagation delay A to 2Y; see Figure 3 [2] nOE to 1Y; see Figure 3 VCC(A) = 1.1 V to 1.3 V 5.1 9.2 16.4 4.6 17.1 ns VCC(A) = 1.4 V to 1.6 V 4.3 6.6 9.9 3.8 10.8 ns VCC(A) = 1.65 V to 1.95 V 4.0 5.6 8.1 3.5 8.9 ns VCC(A) = 2.3 V to 2.7 V 3.4 4.7 6.7 3.0 7.2 ns VCC(A) = 3.0 V to 3.6 V 3.3 4.4 6.2 3.0 6.7 ns 3.4 8.7 20.0 3.2 20.3 ns 2.8 7.0 15.6 2.5 15.8 ns VCC(B) = 1.1 V to 1.3 V 3.4 7.1 15.2 3.2 15.5 ns VCC(B) = 1.4 V to 1.6 V 2.8 6.1 13.5 2.5 13.9 ns CL = 5 pF; VCC(A) = 1.1 V to 1.3 V ten enable time nOE to 2Y; see Figure 4 [3] VCC(B) = 1.1 V to 1.3 V VCC(B) = 1.4 V to 1.6 V tdis disable time nOE to 2Y; see Figure 4 [4] 74AUP1T1326_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 8 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 5. Symbol Parameter 25 °C Conditions −40 °C to +85 °C Unit Min Typ[1] Max Min Max VCC(B) = 1.1 V to 1.3 V 3.4 7.8 16.6 3.1 17.1 ns VCC(B) = 1.4 V to 1.6 V 2.8 6.1 12.2 2.5 12.6 ns 2.4 5.4 10.7 2.1 11.1 ns VCC(B) = 1.1 V to 1.3 V 3.4 6.3 11.8 3.1 12.3 ns VCC(B) = 1.4 V to 1.6 V 2.8 5.3 10.1 2.5 10.7 ns VCC(B) = 1.65 V to 1.95 V 2.4 5.4 9.9 2.1 10.5 ns VCC(B) = 1.1 V to 1.3 V 3.4 7.4 15.6 3.1 16.0 ns VCC(B) = 1.4 V to 1.6 V 2.8 5.6 11.2 2.5 11.5 ns VCC(B) = 1.65 V to 1.95 V 2.4 4.9 9.7 2.1 10.1 ns VCC(B) = 2.3 V to 2.7 V 2.2 4.4 8.2 1.9 8.8 ns 3.4 6.0 10.8 3.1 11.2 ns CL = 5 pF; VCC(A) = 1.4 V to 1.6 V ten enable time nOE to 2Y; see Figure 4 [3] VCC(B) = 1.65 V to 1.95 V tdis disable time nOE to 2Y; see Figure 4 [4] CL = 5 pF; VCC(A) = 1.65 V to 1.95 V ten tdis enable time disable time nOE to 2Y; see Figure 4 nOE to 2Y; see Figure 4 [3] [4] VCC(B) = 1.1 V to 1.3 V VCC(B) = 1.4 V to 1.6 V 2.8 5.0 9.1 2.5 9.6 ns VCC(B) = 1.65 V to 1.95 V 2.4 5.1 8.9 2.1 9.4 ns VCC(B) = 2.3 V to 2.7 V 2.2 4.3 7.8 1.9 8.4 ns VCC(B) = 1.1 V to 1.3 V 3.4 6.8 14.6 3.1 14.9 ns VCC(B) = 1.4 V to 1.6 V 2.8 5.0 10.1 2.5 10.4 ns VCC(B) = 1.65 V to 1.95 V 2.4 4.3 8.7 2.1 9.0 ns VCC(B) = 2.3 V to 2.7 V 2.2 3.7 7.2 1.9 7.7 ns VCC(B) = 3.0 V to 3.6 V 1.9 3.6 6.8 1.6 7.3 ns 3.4 5.5 9.8 3.1 10.1 ns CL = 5 pF; VCC(A) = 2.3 V to 2.7 V ten tdis enable time disable time nOE to 2Y; see Figure 4 nOE to 2Y; see Figure 4 [3] [4] VCC(B) = 1.1 V to 1.3 V VCC(B) = 1.4 V to 1.6 V 2.8 4.5 8.1 2.5 8.5 ns VCC(B) = 1.65 V to 1.95 V 2.4 4.6 7.9 2.1 8.3 ns VCC(B) = 2.3 V to 2.7 V 2.2 3.9 6.8 1.9 7.3 ns VCC(B) = 3.0 V to 3.6 V 1.9 4.4 7.3 1.6 7.7 ns 74AUP1T1326_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 9 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 5. Symbol Parameter 25 °C Conditions −40 °C to +85 °C Unit Min Typ[1] Max Min Max VCC(B) = 1.1 V to 1.3 V 3.4 6.5 14.2 3.1 14.4 ns VCC(B) = 1.4 V to 1.6 V 2.8 4.8 9.7 2.5 9.9 ns VCC(B) = 1.65 V to 1.95 V 2.4 4.1 8.2 2.1 8.5 ns VCC(B) = 2.3 V to 2.7 V 2.2 3.4 6.7 1.9 7.2 ns VCC(B) = 3.0 V to 3.6 V 1.9 3.2 6.3 1.6 6.8 ns 3.4 5.3 9.3 3.1 9.7 ns CL = 5 pF; VCC(A) = 3.0 V to 3.6 V ten tdis enable time disable time nOE to 2Y; see Figure 4 nOE to 2Y; see Figure 4 [3] [4] VCC(B) = 1.1 V to 1.3 V VCC(B) = 1.4 V to 1.6 V 2.8 4.3 7.7 2.5 8.0 ns VCC(B) = 1.65 V to 1.95 V 2.4 4.4 7.4 2.1 7.9 ns VCC(B) = 2.3 V to 2.7 V 2.2 3.7 6.4 1.9 6.8 ns VCC(B) = 3.0 V to 3.6 V 1.9 4.2 6.9 1.6 7.2 ns 3.7 9.9 22.9 3.3 23.1 ns 3.1 8.0 17.8 2.8 18.1 ns VCC(B) = 1.1 V to 1.3 V 3.7 8.5 18.0 3.3 18.3 ns VCC(B) = 1.4 V to 1.6 V 3.1 7.3 16.0 2.8 16.4 ns VCC(B) = 1.1 V to 1.3 V 3.7 8.8 18.8 3.3 19.3 ns VCC(B) = 1.4 V to 1.6 V 3.1 6.9 13.8 2.8 14.2 ns 2.9 6.1 12.2 2.5 12.9 ns VCC(B) = 1.1 V to 1.3 V 3.7 7.6 14.0 3.3 14.5 ns VCC(B) = 1.4 V to 1.6 V 3.1 6.4 11.9 2.8 12.5 ns VCC(B) = 1.65 V to 1.95 V 2.9 6.7 12.0 2.5 12.6 ns VCC(B) = 1.1 V to 1.3 V 3.7 8.3 17.6 3.3 18.1 ns VCC(B) = 1.4 V to 1.6 V 3.1 6.4 12.6 2.8 13.1 ns VCC(B) = 1.65 V to 1.95 V 2.9 5.6 11.0 2.5 11.7 ns VCC(B) = 2.3 V to 2.7 V 2.5 5.1 9.7 2.2 10.5 ns CL = 10 pF; VCC(A) = 1.1 V to 1.3 V ten enable time nOE to 2Y; see Figure 4 [3] VCC(B) = 1.1 V to 1.3 V VCC(B) = 1.4 V to 1.6 V tdis disable time nOE to 2Y; see Figure 4 [4] CL = 10 pF; VCC(A) = 1.4 V to 1.6 V ten enable time nOE to 2Y; see Figure 4 [3] VCC(B) = 1.65 V to 1.95 V tdis disable time nOE to 2Y; see Figure 4 [4] CL = 10 pF; VCC(A) = 1.65 V to 1.95 V ten enable time nOE to 2Y; see Figure 4 [3] 74AUP1T1326_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 10 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 5. Symbol Parameter tdis disable time 25 °C Conditions −40 °C to +85 °C Unit Min Typ[1] Max Min Max VCC(B) = 1.1 V to 1.3 V 3.7 7.2 12.8 3.3 13.4 ns VCC(B) = 1.4 V to 1.6 V 3.1 6.0 10.8 2.8 11.4 ns VCC(B) = 1.65 V to 1.95 V 2.9 6.3 10.8 2.5 11.5 ns VCC(B) = 2.3 V to 2.7 V 2.5 5.2 9.5 2.2 10.1 ns VCC(B) = 1.1 V to 1.3 V 3.7 7.7 16.6 3.3 16.9 ns VCC(B) = 1.4 V to 1.6 V 3.1 5.8 11.6 2.8 11.9 ns VCC(B) = 1.65 V to 1.95 V 2.9 5.0 10.0 2.5 10.5 ns VCC(B) = 2.3 V to 2.7 V 2.5 4.4 8.7 2.2 9.3 ns 2.3 4.3 8.3 2.1 8.8 ns VCC(B) = 1.1 V to 1.3 V 3.7 6.8 11.8 3.3 12.2 ns VCC(B) = 1.4 V to 1.6 V 3.1 5.6 9.7 2.8 10.2 ns VCC(B) = 1.65 V to 1.95 V 2.9 5.9 9.8 2.5 10.3 ns VCC(B) = 2.3 V to 2.7 V 2.5 4.8 8.4 2.2 8.9 ns VCC(B) = 3.0 V to 3.6 V 2.3 5.8 9.4 2.1 9.8 ns 3.7 7.4 16.1 3.3 16.5 ns nOE to 2Y; see Figure 4 [4] CL = 10 pF; VCC(A) = 2.3 V to 2.7 V ten enable time nOE to 2Y; see Figure 4 [3] VCC(B) = 3.0 V to 3.6 V tdis disable time nOE to 2Y; see Figure 4 [4] CL = 10 pF; VCC(A) = 3.0 V to 3.6 V ten enable time nOE to 2Y; see Figure 4 [3] VCC(B) = 1.1 V to 1.3 V VCC(B) = 1.4 V to 1.6 V 3.1 5.5 11.1 2.8 11.5 ns VCC(B) = 1.65 V to 1.95 V 2.9 4.7 9.5 2.5 10.1 ns VCC(B) = 2.3 V to 2.7 V 2.5 4.1 8.3 2.2 8.8 ns 2.3 3.9 7.8 2.1 8.3 ns VCC(B) = 1.1 V to 1.3 V 3.7 6.6 11.3 3.3 11.7 ns VCC(B) = 1.4 V to 1.6 V 3.1 5.4 9.3 2.8 9.7 ns VCC(B) = 1.65 V to 1.95 V 2.9 5.7 9.4 2.5 9.8 ns VCC(B) = 2.3 V to 2.7 V 2.5 4.6 8.0 2.2 8.5 ns VCC(B) = 3.0 V to 3.6 V 2.3 5.6 9.0 2.1 9.4 ns VCC(B) = 1.1 V to 1.3 V 4.2 10.9 25.5 3.8 25.9 ns VCC(B) = 1.4 V to 1.6 V 3.6 8.9 20.1 3.2 20.6 ns VCC(B) = 1.1 V to 1.3 V 4.2 9.9 20.8 3.8 21.1 ns VCC(B) = 1.4 V to 1.6 V 3.6 8.4 18.4 3.2 18.9 ns VCC(B) = 3.0 V to 3.6 V tdis disable time nOE to 2Y; see Figure 4 [4] CL = 15 pF; VCC(A) = 1.1 V to 1.3 V ten tdis enable time disable time nOE to 2Y; see Figure 4 nOE to 2Y; see Figure 4 [3] [4] 74AUP1T1326_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 11 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 5. Symbol Parameter 25 °C Conditions −40 °C to +85 °C Unit Min Typ[1] Max Min Max VCC(B) = 1.1 V to 1.3 V 4.2 9.7 20.8 3.8 21.4 ns VCC(B) = 1.4 V to 1.6 V 3.6 7.6 15.3 3.2 16.1 ns 3.1 6.8 13.6 2.7 14.5 ns VCC(B) = 1.1 V to 1.3 V 4.2 8.9 16.0 3.8 16.6 ns VCC(B) = 1.4 V to 1.6 V 3.6 7.4 13.7 3.2 14.4 ns VCC(B) = 1.65 V to 1.95 V 3.1 8.0 14.1 2.7 14.8 ns VCC(B) = 1.1 V to 1.3 V 4.2 9.1 19.5 3.8 20.1 ns VCC(B) = 1.4 V to 1.6 V 3.6 7.0 14.0 3.1 14.7 ns VCC(B) = 1.65 V to 1.95 V 3.1 6.2 12.2 2.7 13.2 ns VCC(B) = 2.3 V to 2.7 V 2.8 5.6 11.0 2.4 11.8 ns 4.2 8.5 14.7 3.8 15.3 ns CL = 15 pF; VCC(A) = 1.4 V to 1.6 V ten enable time nOE to 2Y; see Figure 4 [3] VCC(B) = 1.65 V to 1.95 V tdis disable time nOE to 2Y; see Figure 4 [4] CL = 15 pF; VCC(A) = 1.65 V to 1.95 V ten tdis enable time disable time nOE to 2Y; see Figure 4 nOE to 2Y; see Figure 4 [3] [4] VCC(B) = 1.1 V to 1.3 V VCC(B) = 1.4 V to 1.6 V 3.6 7.0 12.4 3.1 13.1 ns VCC(B) = 1.65 V to 1.95 V 3.1 7.5 12.7 2.7 13.5 ns VCC(B) = 2.3 V to 2.7 V 2.8 6.1 11.0 2.4 11.8 ns VCC(B) = 1.1 V to 1.3 V 4.2 8.5 18.4 3.8 18.8 ns VCC(B) = 1.4 V to 1.6 V 3.6 6.4 13.0 3.2 13.5 ns VCC(B) = 1.65 V to 1.95 V 3.1 5.6 11.2 2.7 11.9 ns VCC(B) = 2.3 V to 2.7 V 2.8 4.9 10.0 2.5 10.6 ns VCC(B) = 3.0 V to 3.6 V 2.5 4.8 9.6 2.3 10.1 ns 4.2 8.0 13.6 3.8 14.0 ns CL = 15 pF; VCC(A) = 2.3 V to 2.7 V ten tdis enable time disable time nOE to 2Y; see Figure 4 nOE to 2Y; see Figure 4 [3] [4] VCC(B) = 1.1 V to 1.3 V VCC(B) = 1.4 V to 1.6 V 3.6 6.6 11.3 3.2 11.8 ns VCC(B) = 1.65 V to 1.95 V 3.1 7.1 11.7 2.7 12.3 ns VCC(B) = 2.3 V to 2.7 V 2.8 5.7 10.0 2.5 10.5 ns VCC(B) = 3.0 V to 3.6 V 2.5 7.1 11.5 2.3 11.9 ns 74AUP1T1326_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 12 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 5. Symbol Parameter 25 °C Conditions −40 °C to +85 °C Unit Min Typ[1] Max Min Max VCC(B) = 1.1 V to 1.3 V 4.2 8.2 18.0 3.8 18.4 ns VCC(B) = 1.4 V to 1.6 V 3.6 6.1 12.5 3.2 13.0 ns VCC(B) = 1.65 V to 1.95 V 3.1 5.2 10.7 2.7 11.5 ns VCC(B) = 2.3 V to 2.7 V 2.8 4.6 9.5 2.5 10.1 ns VCC(B) = 3.0 V to 3.6 V 2.5 4.4 9.1 2.3 9.6 ns 4.2 7.8 13.2 3.8 13.6 ns CL = 15 pF; VCC(A) = 3.0 V to 3.6 V ten tdis enable time disable time nOE to 2Y; see Figure 4 nOE to 2Y; see Figure 4 [3] [4] VCC(B) = 1.1 V to 1.3 V VCC(B) = 1.4 V to 1.6 V 3.6 6.3 10.9 3.2 11.4 ns VCC(B) = 1.65 V to 1.95 V 3.1 6.9 11.3 2.7 11.8 ns VCC(B) = 2.3 V to 2.7 V 2.8 5.5 9.5 2.5 10.0 ns VCC(B) = 3.0 V to 3.6 V 2.5 6.8 11.0 2.3 11.5 ns 5.1 13.8 33.1 4.6 33.8 ns 4.3 11.2 26.1 3.8 27.7 ns VCC(B) = 1.1 V to 1.3 V 5.1 13.9 28.5 4.6 29.2 ns VCC(B) = 1.4 V to 1.6 V 4.3 11.7 25.4 3.8 26.2 ns VCC(B) = 1.1 V to 1.3 V 5.1 12.1 26.6 4.6 27.5 ns VCC(B) = 1.4 V to 1.6 V 4.3 9.5 19.6 3.8 21.4 ns 4.0 8.5 17.7 3.5 19.2 ns VCC(B) = 1.1 V to 1.3 V 5.1 12.6 22.0 4.6 22.9 ns VCC(B) = 1.4 V to 1.6 V 4.3 10.4 18.9 3.8 19.9 ns VCC(B) = 1.65 V to 1.95 V 4.0 11.6 20.1 3.5 21.2 ns VCC(B) = 1.1 V to 1.3 V 5.1 11.4 24.8 4.6 25.6 ns VCC(B) = 1.4 V to 1.6 V 4.3 8.7 17.8 3.8 19.5 ns VCC(B) = 1.65 V to 1.95 V 4.0 7.7 15.9 3.5 17.3 ns VCC(B) = 2.3 V to 2.7 V 3.4 7.1 14.3 3.1 15.3 ns CL = 30 pF; VCC(A) = 1.1 V to 1.3 V ten enable time nOE to 2Y; see Figure 4 [3] VCC(B) = 1.1 V to 1.3 V VCC(B) = 1.4 V to 1.6 V tdis disable time nOE to 2Y; see Figure 4 [4] CL = 30 pF; VCC(A) = 1.4 V to 1.6 V ten enable time nOE to 2Y; see Figure 4 [3] VCC(B) = 1.65 V to 1.95 V tdis disable time nOE to 2Y; see Figure 4 [4] CL = 30 pF; VCC(A) = 1.65 V to 1.95 V ten enable time nOE to 2Y; see Figure 4 [3] 74AUP1T1326_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 13 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 5. Symbol Parameter tdis disable time 25 °C Conditions −40 °C to +85 °C Unit Min Typ[1] Max Min Max VCC(B) = 1.1 V to 1.3 V 5.1 12.0 20.2 4.6 21.0 ns VCC(B) = 1.4 V to 1.6 V 4.3 9.9 17.1 3.8 18.0 ns VCC(B) = 1.65 V to 1.95 V 4.0 11.1 18.3 3.5 19.3 ns VCC(B) = 2.3 V to 2.7 V 3.4 8.7 15.5 3.2 16.4 ns VCC(B) = 1.1 V to 1.3 V 5.1 10.6 23.3 4.6 23.9 ns VCC(B) = 1.4 V to 1.6 V 4.3 7.9 16.4 3.8 17.8 ns VCC(B) = 1.65 V to 1.95 V 4.0 6.9 14.4 3.5 15.6 ns VCC(B) = 2.3 V to 2.7 V 3.4 6.2 12.8 3.2 13.6 ns 3.3 6.1 12.4 3.1 13.0 ns VCC(B) = 1.1 V to 1.3 V 5.1 11.5 18.7 4.6 19.3 ns VCC(B) = 1.4 V to 1.6 V 4.3 9.3 15.6 3.8 16.3 ns VCC(B) = 1.65 V to 1.95 V 4.0 10.5 16.8 3.5 17.5 ns VCC(B) = 2.3 V to 2.7 V 3.4 8.2 14.0 3.2 14.7 ns VCC(B) = 3.0 V to 3.6 V 3.3 10.7 17.0 3.1 17.6 ns 5.1 10.2 22.9 4.6 23.4 ns nOE to 2Y; see Figure 4 [4] CL = 30 pF; VCC(A) = 2.3 V to 2.7 V ten enable time nOE to 2Y; see Figure 4 [3] VCC(B) = 3.0 V to 3.6 V tdis disable time nOE to 2Y; see Figure 4 [4] CL = 30 pF; VCC(A) = 3.0 V to 3.6 V ten enable time nOE to 2Y; see Figure 4 [3] VCC(B) = 1.1 V to 1.3 V VCC(B) = 1.4 V to 1.6 V 4.3 7.6 15.9 3.8 17.2 ns VCC(B) = 1.65 V to 1.95 V 4.0 6.6 14.0 3.5 15.1 ns VCC(B) = 2.3 V to 2.7 V 3.4 5.8 12.4 3.2 13.1 ns 3.3 5.6 12.0 3.1 12.5 ns VCC(B) = 1.1 V to 1.3 V 5.1 11.2 18.3 4.6 18.8 ns VCC(B) = 1.4 V to 1.6 V 4.3 9.1 15.2 3.8 15.8 ns VCC(B) = 1.65 V to 1.95 V 4.0 10.2 16.4 3.5 17.0 ns VCC(B) = 2.3 V to 2.7 V 3.4 7.9 13.6 3.2 14.2 ns VCC(B) = 3.0 V to 3.6 V 3.3 10.5 16.5 3.1 17.1 ns VCC(B) = 3.0 V to 3.6 V tdis disable time nOE to 2Y; see Figure 4 [4] 74AUP1T1326_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 14 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 5. Symbol Parameter 25 °C Conditions −40 °C to +85 °C Unit Min Typ[1] Max Min Max VCC(A) = VCC(B) = 1.2 V - 2.8 - - - pF VCC(A) = VCC(B) = 1.5 V - 3.0 - - - pF VCC(A) = VCC(B) = 1.8 V - 3.0 - - - pF VCC(A) = VCC(B) = 2.5 V - 3.6 - - - pF VCC(A) = VCC(B) = 3.3 V - 4.1 - - - pF CL = 5 pF, 10 pF, 15 pF and 30 pF power dissipation capacitance CPD output 2Y; fi = 1 MHz; VI = 0 V to VCC [1] All typical values are measured at nominal VCC(A) and VCC(B). [2] tpd is the same as tPLH and tPHL. [3] ten is the same as tPZH and tPZL. [4] tdis is the same as tPHZ and tPLZ. [5] CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(CL × VCC2 × fo) = sum of the outputs. [5] 74AUP1T1326_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 15 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state 12. Waveforms VI nOE input VM VM tPLH tPHL GND VOH VM 1Y output VM VOL VI A input VM VM tPLH tPHL GND VOH 2Y output VM VM VOL 001aaj295 Measurement points are given in Table 9. VOL and VOH are typical output voltage levels that occur with the output load. Fig 3. Input nOE to output 1Y and A to output 2Y propagation delay times 74AUP1T1326_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 16 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state VI VM nOE input GND tPLZ VCCO 2Y output LOW-to-OFF OFF-to-LOW VOL tPZL VM VX tPHZ VOH tPZH VY 2Y output HIGH-to-OFF OFF-to-HIGH VM GND outputs enabled outputs disabled outputs enabled 001aaj296 Measurement points are given in Table 9. VOL and VOH are typical output voltage levels that occur with the output load. VCCO is the supply voltage associated with the output pin. Output 1Y has no external load. Fig 4. Table 9. Enable and disable times Measurement points Supply voltage Input[1] Output[2] VCC(A), VCC(B) VM VM VX VY 1.1 V to 1.6 V 0.5VCCI 0.5VCCO VOL + 0.1 V VOH − 0.1 V 1.65 V to 2.7 V 0.5VCCI 0.5VCCO VOL + 0.15 V VOH − 0.15 V 3.0 V to 3.6 V 0.5VCCI 0.5VCCO VOL + 0.3 V VOH − 0.3 V [1] VCCI is the supply voltage associated with the data input port. [2] VCCO is the supply voltage associated with the output port. 74AUP1T1326_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 17 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state VCC VEXT 5 kΩ G VI VO DUT RT CL RL 001aac521 Test data is given in Table 10. Definitions for test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to the output impedance Zo of the pulse generator. VEXT = External voltage for measuring switching times. Fig 5. Table 10. Load circuit for switching times Test data Load[2] Supply voltage Input VEXT VCC(A), VCC(B) VI[1] [3] tr = tf CL RL 1.1 V to 3.6 V VCCI ≤ 3.0 ns 5 pF, 10 pF, 15 pF and 30 pF 5 kΩ or 1 MΩ tPLH, tPHL tPZH, tPHZ tPZL, tPLZ[4] open 2VCCO [1] VCCI is the supply voltage associated with the data input port. [2] For measuring enable and disable times, CL and RL are connected to pin 2Y. Pin 1Y has no load. [3] For measuring enable and disable times RL = 5 kΩ, for measuring propagation delays RL = 1 MΩ. [4] VCCO is the supply voltage associated with the output port. 74AUP1T1326_1 Product data sheet GND © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 18 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state 13. Transfer characteristics Table 11. Transfer characteristics Voltages are referenced to GND (ground = 0 V; for test circuit see Figure 5. Symbol VT+ VT− VH Parameter 25 °C Conditions positive-going threshold voltage −40 °C to +85 °C Unit Min Typ Max Min Max VCC(A) = 1.1 V 0.53 - 0.90 0.53 0.90 V VCC(A) = 1.4 V 0.74 - 1.11 0.74 1.11 V nOE inputs; see Figure 6 and Figure 7 negative-going threshold voltage VCC(A) = 1.65 V 0.91 - 1.29 0.91 1.29 V VCC(A) = 2.3 V 1.37 - 1.77 1.37 1.77 V VCC(A) = 3.0 V 1.88 - 2.29 1.88 2.29 V VCC(A) = 1.1 V 0.26 - 0.65 0.26 0.65 V VCC(A) = 1.4 V 0.39 - 0.75 0.39 0.75 V VCC(A) = 1.65 V 0.47 - 0.84 0.47 0.84 V VCC(A) = 2.3 V 0.69 - 1.04 0.69 1.04 V VCC(A) = 3.0 V 0.88 - 1.24 0.88 1.24 V VCC(A) = 1.1 V 0.08 - 0.46 0.08 0.46 V VCC(A) = 1.4 V 0.18 - 0.56 0.18 0.56 V VCC(A) = 1.65 V 0.27 - 0.66 0.27 0.66 V VCC(A) = 2.3 V 0.53 - 0.92 0.53 0.92 V VCC(A) = 3.0 V 0.79 - 1.31 0.79 1.31 V nOE inputs; see Figure 6 and Figure 7 hysteresis voltage nOE inputs; (VT+ − VT−); see Figure 6, Figure 7, Figure 8 and Figure 9 14. Waveforms transfer characteristics VT+ VO VI VH VT− VO VI VH VT− VT+ mna208 mna207 VT+ and VT− limits at 70 % and 20 %. Fig 6. Transfer characteristic Fig 7. Definition of VT+, VT− and VH 74AUP1T1326_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 19 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state 001aad691 240 ICC (µA) 160 80 0 0 0.4 0.8 1.2 1.6 2.0 VI (V) Fig 8. Typical transfer characteristics; VCC(A) = 1.8 V 001aad692 1200 ICC (µA) 800 400 0 0 1.0 2.0 3.0 VI (V) Fig 9. Typical transfer characteristics; VCC(A) = 3.0 V 74AUP1T1326_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 20 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state 15. Package outline XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1.95 x 0.5 mm 1 2 SOT833-1 b 4 3 4× (2) L L1 e 8 7 6 e1 5 e1 e1 8× A (2) A1 D E terminal 1 index area 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A(1) max A1 max b D E e e1 L L1 mm 0.5 0.04 0.25 0.17 2.0 1.9 1.05 0.95 0.6 0.5 0.35 0.27 0.40 0.32 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT833-1 --- MO-252 --- EUROPEAN PROJECTION ISSUE DATE 07-11-14 07-12-07 Fig 10. Package outline SOT833-1 (XSON8) 74AUP1T1326_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 21 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state 16. Abbreviations Table 12. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal-Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor-Transistor Logic 17. Revision history Table 13. Revision history Document ID Release date Data sheet status Change notice Supersedes 74AUP1T1326_1 20090120 Product data sheet - - 74AUP1T1326_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 22 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state 18. Legal information 18.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 18.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 18.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 18.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 19. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] 74AUP1T1326_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 20 January 2009 23 of 24 74AUP1T1326 NXP Semiconductors Low-power dual supply buffer/line driver; 3-state 20. Contents 1 2 3 4 5 6 6.1 6.2 7 8 9 10 11 12 13 14 15 16 17 18 18.1 18.2 18.3 18.4 19 20 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Transfer characteristics. . . . . . . . . . . . . . . . . . 19 Waveforms transfer characteristics . . . . . . . . 19 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 21 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 22 Legal information. . . . . . . . . . . . . . . . . . . . . . . 23 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 23 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Contact information. . . . . . . . . . . . . . . . . . . . . 23 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 January 2009 Document identifier: 74AUP1T1326_1