DISCRETE SEMICONDUCTORS DATA SHEET LTE21025R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE21025R FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN • Self-aligned process entirely ion implanted • Gold metallization realizes very stable characteristics and excellent lifetime DESCRIPTION 1 collector 2 base 3 emitter connected to flange • Input matching cell improves input impedance and allows an easier design of wideband circuits. 1 olumns APPLICATIONS c • Common emitter class-A linear power amplifiers up to 4.2 GHz. b 3 e DESCRIPTION 2 MAM131 Top view NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. Marking code: 439 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance up to Tmb = 25 °C in a common emitter class-A test circuit. MODE OF OPERATION Class-A (CW) f (GHz) VCE (V) IC (mA) PL1 (W) Gpo (dB) 2.1 16 400 typ. 2.8 typ. 7.8 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 21 2 Philips Semiconductors Product specification NPN microwave power transistor LTE21025R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCER collector-emitter voltage RBE = 70 Ω − 20 V VCEO collector-emitter voltage open base − 16 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 800 mA Ptot total power dissipation − 8 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature − 235 °C Tmb ≤ 75 °C at 0.3 mm from ceramic; t ≤ 10 s MGL006 1 MGD973 10 handbook, halfpage handbook, Ptot (W) 8 IC (A) (1) 6 (2) 10−1 4 2 10−2 1 10 16 VCE (V) 0 102 0 50 100 150 200 Tmb (°C) Tmb ≤ 75 °C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE ≤ 70 Ω. Fig.3 Fig.2 DC SOAR. 1997 Feb 21 3 Power dissipation derating as a function of mounting-base temperature. Philips Semiconductors Product specification NPN microwave power transistor LTE21025R THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting-base Tj = 75 °C 10 K/W Rth mb-h thermal resistance from mounting-base to heatsink Tj = 75 °C; note 1 0.7 K/W Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = 20 V; IE = 0 − − 225 µA VCB = 40 V; IE = 0 − − 1.5 mA − 0.6 µA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 − hFE DC current gain VCE = 5 V; IC = 400 mA 15 − 150 Ccb collector-base capacitance VCB = 16 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz − 3 − pF Cce collector-emitter capacitance VCE = 16 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz − 1.5 − pF Ceb emitter-base capacitance VCB = 10 V; VEB = 1 V; IC = IE = 0; f = 1 MHz − 28 − pF 1997 Feb 21 4 Philips Semiconductors Product specification NPN microwave power transistor Table 1 f (MHz) LTE21025R Scattering parameters: VCE = 16 V; IC = 400 mA (VCE and IC regulated); Tmb = 25 °C; Zo = 50 Ω; typical values. (The figures given between brackets are values in dB). s21 s11 s12 s22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) 500 0.94 176 0.017 (−35.4) 43 2.79 (8.9) 81 0.49 −173 600 0.94 174 0.018 (−34.7) 46 2.39 (7.6) 77 0.54 −173 700 0.94 173 0.019 (−34.4) 47 2.07 (6.3) 72 0.52 −176 800 0.93 172 0.020 (−34.1) 49 1.85 (5.3) 68 0.52 −177 900 0.93 170 0.021 (−33.8) 49 1.66 (4.4) 64 0.53 −179 1000 0.93 168 0.022 (−33.3) 50 1.50 (3.5) 60 0.53 179 1100 0.92 167 0.023 (−32.6) 50 1.39 (2.9) 57 0.53 179 1200 0.93 166 0.026 (−31.6) 50 1.31 (2.4) 53 0.54 177 1300 0.93 164 0.029 (−30.6) 49 1.23 (1.8) 49 0.54 176 1400 0.93 167 0.032 (−29.9) 54 1.16 (1.3) 48 0.55 179 1500 0.93 163 0.037 (−28.7) 54 1.11 (0.9) 43 0.54 176 1600 0.93 162 0.040 (−27.9) 53 1.07 (0.6) 39 0.55 175 1700 0.93 161 0.042 (−27.5) 51 1.03 (0.3) 35 0.55 176 1800 0.92 159 0.043 (−27.3) 49 0.99 (−0.1) 30 0.56 174 2000 0.88 151 0.046 (−26.7) 46 0.99 (−0.1) 22 0.56 170 2200 0.89 148 0.052 (−25.7) 43 0.92 (−0.7) 14 0.57 168 2400 0.90 147 0.059 (−24.6) 41 0.88 (−1.1) 9 0.58 168 2600 0.90 147 0.069 (−23.2) 38 0.90 (−0.9 1 0.59 168 2800 0.87 142 0.073 (−22.8) 32 0.88 (−1.1) −8 0.60 169 3000 0.83 134 0.075 (−22.5) 26 0.90 (−0.9) −18 0.61 168 3200 0.82 129 0.077(−22.2) 21 0.87 (−1.2) −27 0.63 166 3400 0.83 130 0.085 (−21.4) 18 0.90 (−1.0) −37 0.65 165 3600 0.80 130 0.091 (−20.8) 11 0.91 (−0.8) −50 0.69 165 3800 0.73 127 0.091 (−20.8) 3 0.94 (−0.5) −64 0.74 164 4000 0.69 122 0.087 (−21.2) −7 0.95 (−0.5) −82 0.79 162 4200 0.67 122 0.078 (−22.2) −15 0.89 (−1.0) −100 0.84 157 4400 0.69 126 0.071 (−23.0) −19 0.83 (−1.7) −121 0.89 150 4600 0.72 130 0.059 (−24.6) −18 0.70 (−3.1) −141 0.92 143 4800 0.76 128 0.054 (−25.4) −11 0.60 (−4.4) −160 0.94 136 1997 Feb 21 5 Philips Semiconductors Product specification NPN microwave power transistor LTE21025R PACKAGE OUTLINE 0.1 handbook, full pagewidth 3.45 2.90 1.7 max 4.5 max 3 20.5 max seating plane 0.25 M 1.0 1 4.5 min O 0.25 M 3.2 2.9 5.1 3.4 (1) 2 2.0 7.1 14.2 Dimensions in mm. Torque on screw: max. 0.4 Nm Recommended screw: M2.5 (1) Flatness of this area ensures full thermal contact with bolt head. Fig.4 SOT440A. 1997 Feb 21 6 MBC888 5.5 max 4.5 min Philips Semiconductors Product specification NPN microwave power transistor LTE21025R DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 21 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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