DISCRETE SEMICONDUCTORS DATA SHEET PVB42004X NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor PVB42004X FEATURES PINNING - SOT445A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR 1 collector • Local thick oxide and gold sandwich metallization realizes very stable characteristics and excellent lifetime 2 emitter 3 base connected to flange DESCRIPTION • Multicell geometry gives good balance of dissipated power and low thermal resistance. handbook, halfpage 1 c APPLICATIONS • Intended for use in common base class-B power amplifiers up to 4.2 GHz. b 3 3 e 2 DESCRIPTION Top view NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445A) with the common base connected to the flange. MAM251 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class-B test circuit. MODE OF OPERATION Class-B (CW) f (GHz) VCC (V) PL (W) Gp (dB) ηC (%) Zi (Ω) ZL (Ω) 1 24 typ. 13 typ. 11 typ. 60 2.3 + j2.8 7.8 + j11.6 2 24 typ. 10 typ. 10 typ. 48 1.4 + j9.5 3.9 + j2.6 3 24 typ. 7.5 typ. 8.8 typ. 30 4.2 + j21 2.3 − j2.5 4 24 typ. 4 typ. 6 typ. 25 38 − j32 1.9 − j8.5 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 19 2 Philips Semiconductors Product specification NPN microwave power transistor PVB42004X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 15 V VCES collector-emitter voltage RBE = 0 Ω − 40 V open collector − 3 V − 1 A − 18 W −65 +200 °C − 200 °C − 235 °C VEBO emitter-base voltage IC collector current Ptot total power dissipation Tstg storage temperature Tj operating junction temperature Tsld soldering temperature Tmb = 75 °C at 0.1 mm from the case; t ≤ 10 s MGD967 25 handbook, halfpage Ptot (W) 20 15 (2) (1) 10 5 0 −50 0 50 100 150 200 Tmb (°C) VCE = 24 V; f > 1 MHz. (1) VSWR ≥ 5. (2) VSWR < 3. Fig.2 1997 Feb 19 Power derating curves as functions of mounting base temperature. 3 Philips Semiconductors Product specification NPN microwave power transistor PVB42004X THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting base Tj = 75 °C 6.5 K/W Rth mb-h thermal resistance from mounting-base to heatsink Tj = 75 °C; note 1 0.7 K/W Note 1. See “Mounting recommendations in the General part of handbook SC15”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CES collector-emitter breakdown voltage IC = 30 mA; RBE = 0 40 − − V ICBO collector cut-off current VCB = 24 V; IE = 0 − − 50 mA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 − − 1.5 mA Ccb collector-base capacitance VCB = 24 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz − 50 − pF Cce collector-emitter capacitance VCB = 24 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz − 1.2 − pF Ceb emitter-base capacitance VCB = 24 V; VEB = 1 V; IE = IC = 0; f = 1 MHz − 30 − pF MGD978 16 MGD979 16 handbook, halfpage handbook, halfpage PL (W) Gp (dB) 12 12 80 ηC (%) 60 Gp 8 8 4 4 40 ηC 20 0 0 0 1 2 3 1 4 f (GHz) 5 2 3 4 f (GHz) 5 VCC = 24 V; PS = 1 W. VCC = 24 V; PS = 1 W. Fig.4 Fig.3 Load power as a function of frequency. 1997 Feb 19 4 Power gain and efficiency as functions of frequency. Philips Semiconductors Product specification NPN microwave power transistor PVB42004X 1 handbook, full pagewidth 0.5 2 Zi 3 2.5 0.2 3.5 5 2 1.5 +j 10 1 GHz 0.2 0 0.5 1 2 5 10 ∞ −j 10 4 5 0.2 4.2 2 0.5 MGL019 1 VCC = 24 V; PS = 1 W; Zo = 50 Ω. Fig.5 Input impedance as a function of frequency; typical values. 1 handbook, full pagewidth 0.5 2 ZL 0.2 5 1 GHz 1.5 +j 2 0 2.5 0.2 10 0.5 1 2 5 10 3 −j 3.5 ∞ 10 4 0.2 4.2 5 2 0.5 1 MGL018 VCC = 24 V; PS = 1 W; Zo = 50 Ω. Fig.6 Output impedance as a function of frequency; typical values. 1997 Feb 19 5 Philips Semiconductors Product specification NPN microwave power transistor PVB42004X PACKAGE OUTLINE 8.0 handbook, full pagewidth 0.1 4.0 max 3.4 3.0 3 1.8 max 20.6 max seating plane 3.2 2.9 0.4 M 1 4.0 min 3.2 2.9 5.2 max O 0.3 M 5.35 max 4.0 min 2 7.1 3.2 2.9 0.4 M MSA090 - 1 14.2 Dimensions in mm. Torque on screw: Max. 0.4 Nm. Recommended screw: M2.5. Fig.7 SOT445A. 1997 Feb 19 6 Philips Semiconductors Product specification NPN microwave power transistor PVB42004X DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 19 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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