DISCRETE SEMICONDUCTORS DATA SHEET PLB16004U Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR • Interdigitated common-base structure provides high emitter efficiency • Gold metallization with barrier realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching networks allow an easier design of circuits. APPLICATIONS PLB16004U QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. MODE OF OPERATION Class C (CW) f (GHz) VCC (V) PL (W) Gp (dB) ηC (%) Zi; ZL (Ω) 1.6 28 >4.5 >8.5 >40 see Figs 5 and 6 PINNING - SOT437A PIN DESCRIPTION 1 collector 2 emitter 3 base connected to flange handbook, 4 columns 1 c Intended for use in common-base class C power amplifiers at 1.6 GHz. b 3 DESCRIPTION e 2 NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with base connected to flange. Top view MAM112 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 18 2 Philips Semiconductors Product specification Microwave power transistor PLB16004U LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCES collector-emitter voltage RBE = 0 − 40 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3 V IC DC collector current − 0.5 A Ptot total power dissipation − 9 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tsld soldering temperature − 235 °C Tmb = 75 °C t ≤ 10 s; note 1 Note 1. Up to 0.3 mm from ceramic. MLC457 10 handbook, halfpage P tot (W) 8 6 4 2 0 50 0 50 100 150 200 o T mb ( C) Fig.2 Power derating curve. 1997 Feb 18 3 Philips Semiconductors Product specification Microwave power transistor PLB16004U THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Tj = 100 °C Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink note 1 11 K/W 0.3 K/W MAX. UNIT Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. ICES collector cut-off current RBE = 0; VCE = 30 V − 200 µA V(BR)CBO collector-base breakdown voltage IC = 1 mA; IE = 0 40 − V V(BR)CES collector-emitter breakdown voltage IC = 1 mA; IE = 0 40 − V V(BR)EBO emitter-base breakdown voltage IC = 1 mA; IE = 0 3 − V hFE DC current gain IC = 300 mA; VCE = 5 V 15 100 APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common-base test circuit as shown in Fig.3. MODE OF OPERATION Class C (CW) 1997 Feb 18 f (GHz) VCC (V) PL (W) Gp (dB) ηC (%) Zi; ZL (Ω) 1.6 28 typ. 5 typ. 10 typ. 50 see Figs 5 and 6 4 Philips Semiconductors Product specification Microwave power transistor PLB16004U 30 handbook, full pagewidth 30 2.5 3.0 2.5 2.0 8.0 2.5 5.0 6.5 7.8 5.0 4.0 16.0 40 18.5 40 4.0 1.1 2.5 4.0 3.0 1.1 5.8 4.0 MLC456 Dimensions in mm. Substrate: Teflon fibre glass. Thickness: 0.4 mm. Permittivity: εr = 2.55. Fig.3 Narrowband test circuit. MLC458 6 handbook, halfpage PL (W) 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 P i (W) VCC = 28 V; f = 1.6 GHz. Fig.4 Load power as a function of input power. 1997 Feb 18 5 Philips Semiconductors Product specification Microwave power transistor PLB16004U 1 handbook, full pagewidth 0.5 2 Zi 0.2 1.6 GHz 5 2 GHz 1.2 GHz 10 +j 0.2 0 0.5 2 5 ∞ 10 –j 10 5 0.2 2 0.5 MLC459 1 VCC = 28 V; Zo = 50 Ω. Fig.5 Input impedance as a function of frequency; typical values. 1 handbook, full pagewidth 0.5 2 ZL 0.2 1.6 GHz 5 1.2 GHz 10 2 GHz +j 0 0.2 0.5 2 5 ∞ 10 –j 10 5 0.2 2 0.5 1 MLC460 VCC = 28 V; Zo = 50 Ω. Fig.6 Optimum load impedance as a function of frequency; typical values. 1997 Feb 18 6 Philips Semiconductors Product specification Microwave power transistor PLB16004U PACKAGE OUTLINE 19.1 max 0.13 max 6.5 max 1.7 max 4.8 max 2.3 2.0 seating plane 14.22 0.25 M 1 4.5 min 6.5 6.2 O 3.3 3 4.5 min 2 1.7 max Dimensions in mm. Torque on screws: max. 0.5 Nm. Recommended screw: M3. Recommended pitch for mounting screws: 19 mm. Fig.7 SOT437A. 1997 Feb 18 7 MBB945 Philips Semiconductors Product specification Microwave power transistor PLB16004U DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 18 8 Philips Semiconductors Product specification Microwave power transistor PLB16004U NOTES 1997 Feb 18 9 Philips Semiconductors Product specification Microwave power transistor PLB16004U NOTES 1997 Feb 18 10 Philips Semiconductors Product specification Microwave power transistor PLB16004U NOTES 1997 Feb 18 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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