DISCRETE SEMICONDUCTORS DATA SHEET LFE15600X NPN microwave power transistor Product specification Supersedes data of January 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. LFE15600X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION f (GHz) VCE (V) ICQ (A) PL1 (W) Gpo (dB) Class AB (CW) 1.5 24 0.2 ≥55 ≥8 ηC (%) Zi/ZL (Ω) typ.50 see Figs 7 and 8 PINNING - SOT448A PIN DESCRIPTION 1 collector 2 base 3 emitter connected to flange APPLICATIONS Common emitter, class AB amplifiers in CW conditions for professional applications between 1.5 GHz and 1.7 GHz. 1 book, 4 columns c b 3 3 e DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with emitter connected to flange. 2 MAM045 Top view Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 19 2 Philips Semiconductors Product specification NPN microwave power transistor LFE15600X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 45 V VCER collector-emitter voltage RBE = 56 Ω − 30 V VCEO collector-emitter voltage open base − 22 V VEBO emitter-base voltage open collector − 3 V IC DC collector current − 12 A Pi input power f = 1.5 GHz; VCE = 24 V; class AB − 20 W Ptot total power dissipation Tmb = 75 °C − 80 W Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Tsld soldering temperature − 235 °C t ≤ 10 s; note 1 Note 1. Up to 0.2 mm from ceramic. MBD390 120 P tot (W) 80 40 0 0 100 T mb ( oC) 200 Fig.2 Power derating curve. 1997 Feb 19 3 Philips Semiconductors Product specification NPN microwave power transistor LFE15600X THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting base Tj = 100 °C 1.2 K/W Rth mb-h thermal resistance from mounting base to heatsink note 1 0.2 K/W Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 20 V − 6 mA V(BR)CER collector-emitter breakdown voltage IC = 30 mA; RBE = 56 Ω 30 − V V(BR)CBO collector-base breakdown voltage IC = 30 mA 45 − V V(BR)EBO emitter-base breakdown voltage IE = 30 mA 3 − V hFE DC current gain IC = 1 A; VCE = 5 V 15 100 APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION f (GHz) VCE (V) ICQ (A) PL1 (W) Gpo (dB) ηC (%) Zi/ZL (Ω) Class AB (CW) 1.5 24 0.2 ≥55 typ. 60 ≥8 typ. 8.5 typ. 50 see Figs 7 and 8 1997 Feb 19 4 Philips Semiconductors Product specification NPN microwave power transistor LFE15600X 30 mm 1.0 30 mm 17.5 2.0 4.0 6.5 7.0 3.0 9.0 1.0 40 mm 40 mm 0.635 4.0 4.0 10.0 0.635 MBD396 C5 V BB VCC C6 C7 F1 L1 input output L2 C4 C1 C2 C3 rivet MBD397 The test circuit is split into 2 independent halves, each being 30 × 40 mm in size. Dimensions in mm. Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: εr = 10. Fig.3 Prematching test circuit board. 1997 Feb 19 5 Philips Semiconductors Product specification NPN microwave power transistor LFE15600X PREMATCHING TEST CIRCUIT BIAS CIRCUIT R1 C6 TR1 C5 V CE C7 R2 F1 P1 D1 R3 L2 C8 L1 DUT D2 MBD393 Fig.4 Class AB bias circuit. List of components (see Figs 3 and 4) COMPONENT DESCRIPTION VALUE TYPE NUMBERS TR1 transistor C1, C4 DC blocking chip capacitor 100 pF BDT91 or equivalent ATC 100A101kp C2, C3 trimmer capacitor 0.5 to 5.0 pF Tekelec 727-1 C5, C6 feedthrough bypass capacitor 1500 pF Erie, ref. 1250-003 C7, C8 tantalum capacitor 10 µF, 50 V D1 diode BY239 or equivalent; note 1 D2 diode BY239 or equivalent; note 2 L1 4 turns 0.5 mm copper wire; internal diameter = 2 mm L2 3 turns 0.5 mm copper wire; internal diameter = 2 mm P1 linear potentiometer 4.7 kΩ R1 resistor 100 Ω, 0.25 W R2 resistor 10 kΩ, 0.25 W R3 resistor 50 Ω, 0.25 W F1 ferrite bead Philips tube 3.7 × 1.2 × 3.5 mm (3B) Notes 1. In thermal contact with TR1. 2. In thermal contact with DUT. 1997 Feb 19 6 Philips Semiconductors Product specification NPN microwave power transistor LFE15600X MBD394 80 MBD395 20 d im PL (W) (dB) 25 60 I CQ = 400 mA 200 mA 100 mA 40 I CQ = 400 mA 200 mA 100 mA 30 35 40 20 45 50 0 0 4 8 12 P i (W) 0 16 10 20 30 40 P o (av) (W) 50 VCE = 24 V; f1 = 1500 MHz; f 2 = 1500.2 MHz. VCE = 24 V; f = 1500 MHz. Fig.6 Fig.5 Load power as a function of input power. Intermodulation distortion as a function of average output power. Input and optimum load impedances VCE = 24 V; ICQ = 0.2 A. 1997 Feb 19 f (GHz) Zi (Ω) ZL (Ω) 1.50 2.4 + j3.4 2.4 − j1.8 1.55 3.0 + j3.6 2.3 − j1.7 1.60 3.5 + j3.8 2.2 − j1.6 1.65 4.2 + j3.8 2.1 − j1.5 1.70 4.8 + j2.5 1.8 − j1.5 7 Philips Semiconductors Product specification NPN microwave power transistor LFE15600X 1 0.5 2 1.6 0.2 Zi 5 1.5 1.7 GHz 10 +j 0 0.2 0.5 1 2 5 10 ∞ –j 10 5 0.2 2 0.5 MBD392 1 VCE = 24 V; Zo = 10 Ω; ICQ = 0.2 A. Fig.7 Input impedance as a function of frequency; typical values. 1 0.5 2 0.2 5 ZL 10 +j 0 –j 0.2 1.7 GHz 0.5 1 2 5 10 ∞ 1.6 10 1.5 5 0.2 2 0.5 1 MBD391 VCE = 24 V; Zo = 10 Ω; ICQ = 0.2 A. Fig.8 Optimum load impedance as a function of frequency; typical values. 1997 Feb 19 8 Philips Semiconductors Product specification NPN microwave power transistor LFE15600X DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 19 9 Philips Semiconductors Product specification NPN microwave power transistor LFE15600X NOTES 1997 Feb 19 10 Philips Semiconductors Product specification NPN microwave power transistor LFE15600X NOTES 1997 Feb 19 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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