DISCRETE SEMICONDUCTORS DATA SHEET LAE4001R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LAE4001R FEATURES PINNING - SOT100 • Self-aligned process entirely ion implanted and gold sandwich metallization PIN • Optimum temperature profile • Excellent performance and reliability. DESCRIPTION 1 collector 2 emitter 3 base 4 emitter APPLICATIONS Common emitter class A linear power amplifiers up to 4 GHz. 3 handbook, halfpage DESCRIPTION c NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid. A miniature ceramic encapsulation is used for compatibility with stripline microwave circuits. 4 2 b e 1 MAM312 Marking code: R8. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance up to Tcase = 25 °C in a common emitter class A circuit. MODE OF OPERATION f (GHz) VCE (V) IC (mA) PL1 (mW) Gpo (dB) Zi (Ω) ZL (Ω) CW linear amplifier 4 15 25 >85 >8.5 typ.7 + j22 typ. 10 + j38 MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 2 Philips Semiconductors Product specification NPN microwave power transistor LAE4001R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 30 V VCER collector-emitter voltage RBE = 220 Ω − 25 V VCEO collector-emitter voltage open base − 16 V VEBO emitter-base voltage open collector − 2 V IC collector current (DC) − 80 mA Ptot total power dissipation − 480 mW Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Tsld soldering temperature − 235 °C Tcase ≤ 100 °C t ≤ 10 s MGD988 102 handbook, halfpage MGL069 600 handbook, halfpage Ptot (mW) IC (mA) 400 10 200 (1) 1 1 10 (2) VCE (V) 0 102 0 50 100 150 200 Tcase (oC) Tcase ≤ 100 °C; RBE < 220 Ω. (1) VCEO. (2) VCER. Fig.2 DC SOAR. Fig.3 Power derating curve. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 3 Philips Semiconductors Product specification NPN microwave power transistor LAE4001R THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER CONDITIONS MAX. UNIT 210 K/W Tj = 75 °C thermal resistance from junction to case CHARACTERISTICS Tcase = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current ICER collector cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = 15 V; IE = 0 − − 100 nA VCB = 30 V; IE = 0 − − 100 µA VCB = 25 V; RBE = 220 Ω − − 500 µA IEBO emitter cut-off current IC = 0 V; VEB = 1.5 V − − 35 nA Ccb collector-base capacitance IE = IC = 0; VCB = 15 V; VEB = 1.5 V; f = 1 MHz − 0.25 − pF Cce collector-base capacitance IE = IC = 0; VCE = 15 V; VEB = 1.5 V; f = 1 MHz − 0.5 − pF Ceb collector-base capacitance IE = IC = 0; VEB = 1.0 V; VCB = 15 V; f = 1 MHz − 1.3 − pF sfe2 forward power gain IC = 25 mA; VCE = 15 V; f = 2 GHz − 9.6 − dB IC = 25 mA; VCE = 15 V; f = 4 GHz − 3.8 − dB IC = 25 mA; VCE = 15 V; f = 2 GHz − 16 − dB IC = 25 mA; VCE = 15 V; f = 4 GHz − 10 − dB VCE = 5 V; IC = 25 mA 20 − 220 GAM hFE maximum available gain DC current gain MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 4 Philips Semiconductors Product specification NPN microwave power transistor LAE4001R PACKAGE OUTLINE 2.65 max handbook, full pagewidth 3 3.3 min (4x) 2 4 1.1 (2x) max 1 0.6 (2x) max 0.160 0.075 1.37 max 2.6 max MBC878 - 1 Dimensions in mm. Fig.4 SOT100. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 5 Philips Semiconductors Product specification NPN microwave power transistor LAE4001R DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 6 Philips Semiconductors Product specification NPN microwave power transistor LAE4001R NOTES 1997 Feb 18 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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