INTEGRATED CIRCUITS DATA SHEET TDA3666 Very low dropout voltage/quiescent current 10 V voltage regulator Preliminary specification File under Integrated Circuits, IC01 2000 Apr 26 Philips Semiconductors Preliminary specification Very low dropout voltage/quiescent current 10 V voltage regulator TDA3666 – Able to withstand voltages up to 18 V at the output (supply line may be short-circuited) FEATURES • Fixed 10 V, 100 mA regulator – ESD protection on all pins • Supply voltage range up to 33 V (45 V) – DC short-circuit safe to ground and VP of the regulator output • Very low quiescent current of 15 µA (typical value) • Very low dropout voltage – Temperature protection (at Tj > 150 °C). • High ripple rejection • Very high stability: GENERAL DESCRIPTION – Electrolytic capacitors: Equivalent Series Resistance (ESR) < 30 Ω at IREG ≤ 25 mA (see Fig.6) The TDA3666 is a fixed 10 V voltage regulator with a very low dropout voltage and quiescent current, which operates over a wide supply voltage range. – Other capacitors: 100 nF at 200 µA ≤ IREG ≤ 100 mA. • Pin compatible family TDA3662 to TDA3666 The IC is available as: • Protections: • TDA3666: VP ≤ 45 V; −40 °C ≤ Tamb ≤ +125 °C and SO4 package (automotive) – Reverse polarity safe (down to −25 V without high reverse current) • TDA3666AT: VP ≤ 45 V; −40 °C ≤ Tamb ≤ +125 °C and SO8 package (automotive). – Negative transient of 50 V (RS = 10 Ω and t < 100 ms) QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply input supply voltage VP TDA3666 3 14.4 45 V TDA3666AT 3 14.4 45 V VP = 14.4 V; IREG = 0 mA − 15 30 µA 13 V ≤ VP ≤ 22 V; IREG = 0.5 mA 9.5 10 10.5 V 13 V ≤ VP ≤ 45 V; IREG = 0.5 mA 9.4 10 10.6 V VP = 14.4 V; 0.5 mA ≤ IREG ≤ 100 mA 9.4 10 10.6 V VP = 9.3 V; IREG = 50 mA; Tamb ≤ 85 °C − 0.18 0.3 V quiescent supply current Iq regulator on Voltage regulator VREG VREG(drop) output voltage dropout voltage ORDERING INFORMATION TYPE NUMBER PACKAGES NAME DESCRIPTION VERSION TDA3666 SO4 plastic small outline package; 4 leads; body width 3.5 mm SOT223-1 TDA3666AT SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 2000 Apr 26 2 Philips Semiconductors Preliminary specification Very low dropout voltage/quiescent current 10 V voltage regulator TDA3666 BLOCK DIAGRAM handbook, halfpage VP 1 (8) 3 (1) REGULATOR REG BAND GAP TDA3666 THERMAL PROTECTION 2, 4 (2, 3, 6, 7) MBL130 GND Pin numbers in brackets refer to the SO8 version. Fig.1 Block diagram. PINNING PIN SYMBOL DESCRIPTION SO4 SO8 1 8 supply voltage GND 2 and 4 2, 3, 6 and 7 ground; note 1 REG 3 1 regulator output n.c. − 4 and 5 VP not connected Note 1. For the SO8 package all pins GND are connected to the lead frame and can also be used to reduce the total thermal resistance Rth(j-a) by soldering these pins to a ground plane. The ground plane on the top side of the PCB acts like a heat spreader. 2000 Apr 26 3 Philips Semiconductors Preliminary specification Very low dropout voltage/quiescent current 10 V voltage regulator TDA3666 GND handbook, halfpage handbook, halfpage 4 REG 1 8 VP GND 2 TDA3666 7 GND TDA3666AT 1 2 3 VP GND REG GND 3 6 GND n.c. 4 5 n.c. MBL129 MGU151 Fig.2 Pin configuration of SO4. Fig.3 Pin configuration of SO8. FUNCTIONAL DESCRIPTION A temperature protection circuit is included which switches the regulator output off at a junction temperature above 150 °C. The TDA3666 is a fixed 10 V regulator which can deliver output currents up to 100 mA. The regulator is available in SO8 and SO4 packages. The regulator is intended for portable, mains, telephone and automotive applications. To increase the lifetime of batteries, a specially built-in clamp circuit keeps the quiescent current of this regulator very low, also in dropout and full load conditions. A new output circuit guarantees the stability of the regulator for a capacitor output circuit with an ESR up to 22 Ω (see Figs 5 and 6). This is very attractive as the ESR of an electrolytic capacitor increases strongly at low temperatures (no expensive tantalum capacitor is required). The regulator remains operational down to very low supply voltages and below this voltage it switches off. 2000 Apr 26 4 Philips Semiconductors Preliminary specification Very low dropout voltage/quiescent current 10 V voltage regulator TDA3666 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT supply voltage VP TDA3666 45 V − 45 V non-operating − −25 V TDA3666AT temperature of copper area is 25 °C − 4.1 W TDA3666 Tamb = 25 °C − 5 W −55 +150 °C TDA3666 −40 +125 °C TDA3666AT −40 +125 °C −40 +150 °C TDA3666AT VP(rp) reverse polarity supply voltage Ptot total power dissipation Tstg storage temperature non-operating Tamb ambient temperature operating Tj − junction temperature operating THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Rth(j-c) PARAMETER CONDITIONS UNIT thermal resistance from junction to ambient SO8 in free air; soldered in 125 K/W SO4 in free air; soldered in 100 K/W SO8 to centre pins; soldered in 30 K/W SO4 in free air 25 K/W thermal resistance from junction to case QUALITY SPECIFICATION In accordance with “SNW-FQ-611E”. 2000 Apr 26 VALUE 5 Philips Semiconductors Preliminary specification Very low dropout voltage/quiescent current 10 V voltage regulator TDA3666 CHARACTERISTICS VP = 14.4 V; Tamb = 25 °C; measured with test circuit (see Fig.4); unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply voltage: pin VP VP supply voltage regulator operating; note 1 TDA3666 3 TDA3666AT Iq quiescent supply current 14.4 45 V 3 14.4 45 V VP = 4.5 V; IREG = 0 mA − 10 − µA VP = 14.4 V; IREG = 0 mA − 15 30 µA 9.5 V ≤ VP ≤ 22 V; IREG = 10 mA − 0.2 0.5 mA 9.5 V ≤ VP ≤ 22 V; IREG = 50 mA − 1.4 2.5 mA Regulator output: pin REG; note 2 VREG output voltage VREG(drop) dropout voltage VREG(stab) output voltage long-term stability ∆VREG(line) line regulation voltage 13 V ≤ VP ≤ 22 V; IREG = 0.5 mA 9.5 10 10.5 V 0.5 mA ≤ IREG ≤ 100 mA; Tamb ≤ 125 °C 9.4 10 10.6 V 11 V ≤ VP ≤ 45 V; IREG = 0.5 mA Tamb ≤ 125 °C 9.4 10 10.6 V VP = 9.3 V; IREG = 50 mA; Tamb ≤ 85 °C − 0.18 0.3 V − 20 − mV/1000 h 12 V ≤ VP ≤ 22 V; IREG = 0.5 mA − 1 30 mV 12 V ≤ VP ≤ 45 V; IREG = 0.5 mA − 1 50 mV ∆VREG(load) load regulation voltage 0.5 mA ≤ IREG ≤ 100 mA; Tamb ≤ 125 °C − 10 50 mV SVRR supply voltage ripple rejection fi = 120 Hz; Vi(ripple) = 1 V (RMS); IREG = 0.5 mA 50 60 − dB IREG(crl) output current limit VREG > 9.3 V 0.17 0.25 − A ILO(rp) output leakage current at reverse polarity VP = −15 V; VREG ≤ 0.3 V − 1 500 µA Notes 1. The regulator output will follow VP if VP < VREG + VREG(drop). 2. Limiting values as applicable for both device types: VP ≤ 45 V and −40 °C ≤ Tamb ≤ +125 °C. 2000 Apr 26 6 Philips Semiconductors Preliminary specification Very low dropout voltage/quiescent current 10 V voltage regulator TDA3666 TEST AND APPLICATION INFORMATION MDA961 102 handbook, halfpage ESR (Ω) (1) 10 handbook, halfpage VP 1 C1 1 µF VREG = 10 V C2 10 µF 3 TDA3666 stable region 1 2, 4 (2) MBL131 10−1 10−1 1 10 C2 (µF) 102 (1) Maximum ESR at 200 µA ≤ IREG ≤ 100 mA. (2) Minimum ESR only when IREG ≤ 200 µA. C1 is optional (to minimize supply noise only). Fig.5 Graph for selecting the value of the output capacitor. Fig.4 Test circuit (SO4). Noise The output noise is determined by the value of the output capacitor. The noise figure is measured at a bandwidth of 10 Hz to 100 kHz (see Table 1). Table 1 ESR (Ω) Noise figures 102 OUTPUT CURRENT IREG (mA) C2 = 10 µF C2 = 47 µF C2 = 100 µF 22 0.5 550 320 300 10 50 650 400 400 NOISE FIGURE (µV) stable region Stability 1 The regulator is stabilized with an external capacitor connected to the output. The value of this capacitor can be selected using the diagrams shown in Figs 5 and 6. The following four examples show the effects of the stabilization circuit using different values for the output capacitor. 10−1 1 Fig.6 2000 Apr 26 MDA962 103 handbook, halfpage 7 10 102 IREG (mA) 103 ESR as a function of IREG for selecting the value of the output capacitor. Philips Semiconductors Preliminary specification Very low dropout voltage/quiescent current 10 V voltage regulator TDA3666 EXAMPLE 1 Application circuit with backup function The regulator is stabilized with an electrolytic capacitor of 68 µF (ESR = 0.5 Ω). At Tamb = −40 °C, the capacitor value is decreased to 22 µF and the ESR is increased to 3.5 Ω. The regulator will remain stable at a temperature of Tamb = −40 °C. Sometimes a backup function is needed to supply, for example, a microcontroller for a short period of time when the supply voltage spikes to 0 V (or even −1 V). This function can easily be built with the TDA3666 by using an output capacitor with a large value. When the supply voltage is 0 V (or −1 V), only a small current will flow into pin REG from this output capacitor (a few µA). EXAMPLE 2 The regulator is stabilized with an electrolytic capacitor of 10 µF (ESR = 3.3 Ω). At Tamb = −40 °C, the capacitor value is decreased to 3 µF and the ESR is increased to 20 Ω. The regulator will remain stable at a temperature of Tamb = −40 °C. The application circuit is given in Fig.7. EXAMPLE 3 The regulator is stabilized with a 100 nF MKT capacitor connected to the output. When the output current is over 200 µA full stability is guaranteed. handbook, halfpage VP Because the thermal influence on the capacitor value is almost zero, the regulator will remain stable at a temperature of Tamb = −40 °C. EXAMPLE 4 1 C1 1 µF VREG = 10 V 3 C2 TDA3666 2, 4 The regulator is stabilized with a 100 nF capacitor in parallel with an electrolytic capacitor of 10 µF connected to the output. MBL132 The regulator is now stable under all conditions and independent of: • The ESR of the electrolytic capacitor C1 is optional (to minimize supply noise only). C2 ≤ 4700 µF. • The value of the electrolytic capacitor • The output current. Fig.7 Application circuits The maximum output current of the regulator equals: 150 – T amb I REG ( max ) = ----------------------------------------------------------R th ( j – a ) × ( V P – V REG ) 150 – T amb = ---------------------------------------- ( mA ) 100 × ( V P – 10 ) When Tamb = 21 °C and VP = 19 V the maximum output current equals 140 mA. The total thermal resistance of the TDA3666 can be decreased from 125 to 50 K/W for the SO8 version. For the SO4 version it can be decreased from 100 to 40 K/W when GND pins 2 and 4 of the package are soldered to the printed-circuit board. 2000 Apr 26 8 Application circuit with backup function (SO4 version). Philips Semiconductors Preliminary specification Very low dropout voltage/quiescent current 10 V voltage regulator TDA3666 Additional application information This section gives typical curves for various parameters measured on the TDA3666AT. Standard test conditions are: VP = 14.4 V; Tamb = 25 °C. MDA947 25 MDA949 4 handbook, halfpage handbook, halfpage Iq (µA) Iq (mA) 20 3 15 2 10 1 5 0 0 0 20 10 VP (V) 0 30 10 20 40 30 VP (V) 50 IREG = 0 mA. Fig.8 Quiescent current as a function of the supply voltage. Fig.9 Quiescent current increase as a function of high supply voltage. MDA951 2 MDA948 0.48 handbook, halfpage handbook, halfpage Iq (mA) (1) Iq (mA) 1.5 0.44 1 0.40 0.5 (2) 0 −40 0.36 0 40 80 120 160 Tj (°C) 5 10 15 20 VP (V) 25 (1) Iq at 50 mA load. (2) Iq at 10 mA load. IREG = 10 mA. Fig.10 Quiescent current as a function of the junction temperature. Fig.11 Quiescent current as a function of the supply voltage. 2000 Apr 26 9 Philips Semiconductors Preliminary specification Very low dropout voltage/quiescent current 10 V voltage regulator MDA950 2 TDA3666 MDA952 4 handbook, halfpage handbook, halfpage Iq (mA) Iq (mA) 3 1.8 2 1.6 1 0 1.4 5 10 20 15 VP (V) 0 25 20 40 60 80 100 IREG (mA) IREG = 50 mA. Fig.12 Quiescent current as a function of the supply voltage. Fig.13 Quiescent current as a function of the output current. MGU152 10.10 MGU153 12 handbook, halfpage handbook, halfpage VREG (V) VREG (V) 9 10.05 6 10.00 3 9.95 −50 0 50 100 0 −50 150 200 Tj (°C) 0 50 100 150 200 Tj (°C) IREG = 0 mA. IREG = 0 mA. Fig.14 Output voltage as a function of the junction temperature. Fig.15 Output voltage thermal protection as a function of the junction temperature. 2000 Apr 26 10 Philips Semiconductors Preliminary specification Very low dropout voltage/quiescent current 10 V voltage regulator MDA957 500 TDA3666 MGU154 12 handbook, halfpage handbook, halfpage VREG(drop) VREG (mV) (V) 400 9 300 6 200 3 0 100 0 80 40 IREG (mA) 0 120 100 200 IREG (mA) VP = 11.5 V and pulsed load. Fig.16 Dropout voltage as a function of the output current. Fig.17 Foldback protection mode. MDA956 −30 handbook, halfpage (1) SVRR (dB) −40 (2) −50 (3) (1) −60 (2) −70 10 (3) 102 103 104 f (Hz) 105 C2 = 10 µF. (1) SVRR at RL = 10 kΩ. (2) SVRR at RL = 500 Ω. (3) SVRR at RL = 100 Ω. Fig.18 SVRR as a function of the ripple frequency. 2000 Apr 26 11 300 Philips Semiconductors Preliminary specification Very low dropout voltage/quiescent current 10 V voltage regulator TDA3666 PACKAGE OUTLINES SO4: plastic small outline package; 4 leads; body width 3.5 mm SOT223-1 D E A X c y HE v M A b1 4 Q A A2 (A3) A1 1 2 L bp e Z θ Lp 3 w M detail X e1 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp b1 c mm 1.8 0.10 0.02 1.7 1.5 0.25 0.85 0.65 3.15 2.95 0.35 0.25 (1) (1) D E 6.7 6.3 3.7 3.3 e e1 HE L Lp Q v w y Z θ 2.3 4.6 7.3 6.7 1.75 1.02 0.62 1.0 0.8 0.2 0.1 0.1 1.2 0.7 10° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT223-1 2000 Apr 26 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-08-04 99-12-15 TO-261 12 Philips Semiconductors Preliminary specification Very low dropout voltage/quiescent current 10 V voltage regulator TDA3666 SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE v M A Z 5 8 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0100 0.014 0.0075 0.20 0.19 0.16 0.15 0.244 0.039 0.028 0.050 0.041 0.228 0.016 0.024 inches 0.010 0.057 0.069 0.004 0.049 0.01 0.01 0.028 0.004 0.012 θ Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT96-1 076E03 MS-012 2000 Apr 26 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-05-22 99-12-27 13 o 8 0o Philips Semiconductors Preliminary specification Very low dropout voltage/quiescent current 10 V voltage regulator SOLDERING TDA3666 If wave soldering is used the following conditions must be observed for optimal results: Introduction to soldering surface mount packages • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). • For packages with leads on two sides and a pitch (e): – larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; There is no soldering method that is ideal for all surface mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. – smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. Reflow soldering The footprint must incorporate solder thieves at the downstream end. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. • For packages with leads on four sides, the footprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the packages should preferable be kept below 230 °C. Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Wave soldering Manual soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. To overcome these problems the double-wave soldering method was specifically developed. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. 2000 Apr 26 14 Philips Semiconductors Preliminary specification Very low dropout voltage/quiescent current 10 V voltage regulator TDA3666 Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE REFLOW(1) WAVE BGA, SQFP not suitable HLQFP, HSQFP, HSOP, HTSSOP, SMS not PLCC(3), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO suitable suitable(2) suitable suitable suitable not recommended(3)(4) suitable not recommended(5) suitable Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”. 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. 2000 Apr 26 15 Philips Semiconductors Preliminary specification Very low dropout voltage/quiescent current 10 V voltage regulator TDA3666 DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2000 Apr 26 16 Philips Semiconductors Preliminary specification Very low dropout voltage/quiescent current 10 V voltage regulator NOTES 2000 Apr 26 17 TDA3666 Philips Semiconductors Preliminary specification Very low dropout voltage/quiescent current 10 V voltage regulator NOTES 2000 Apr 26 18 TDA3666 Philips Semiconductors Preliminary specification Very low dropout voltage/quiescent current 10 V voltage regulator NOTES 2000 Apr 26 19 TDA3666 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 753503/25/01/pp20 Date of release: 2000 Apr 26 Document order number: 9397 750 06703