PHILIPS TDA3673T

INTEGRATED CIRCUITS
DATA SHEET
TDA3673
Very low dropout voltage/quiescent
current 3.3 V voltage regulator with
enable
Preliminary specification
Supersedes data of 1999 Sep 29
File under Integrated Circuits, IC01
2000 Feb 01
Philips Semiconductors
Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator with enable
TDA3673
– Able to withstand voltages up to 18 V at the output
(supply line may be short-circuited)
FEATURES
• Fixed 3.3 V, 100 mA regulator with enable function
– ESD protection on all pins
• Supply voltage range up to 33 V (45 V)
– DC short-circuit safe to ground and VP of the
regulator output
• Very low quiescent current of 15 µA (typical value)
• Very low dropout voltage
– Temperature protection (at Tj > 150 °C).
• High ripple rejection
• Very high stability:
GENERAL DESCRIPTION
– Electrolytic capacitors: Equivalent Series Resistance
(ESR) < 38 Ω at IREG ≤ 25 mA
The TDA3673 is a fixed 3.3 V voltage regulator with very
low dropout voltage and quiescent current, which operates
over a wide supply voltage range.
– Other capacitors: 100 nF at 200 µA ≤ IREG ≤ 100 mA.
• Pin compatible family TDA3672 to TDA3676
The IC is available as:
• Protections:
• TDA3673T: VP ≤ 33 V, −40 °C ≤ Tamb ≤ +85 °C and
SO8 package (non-automotive)
– Reverse polarity safe (down to −25 V without high
reverse current)
• TDA3673AT: VP ≤ 45 V, −40 °C ≤ Tamb ≤ +125 °C and
SO8 package (automotive).
– Negative transient of 50 V (RS = 10 Ω, t < 100 ms)
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
VP
supply voltage
regulator on
TDA3673T
3
TDA3673AT
Iq
quiescent supply current
14.4
33
V
3
14.4
45
V
VP = 14.4 V; IREG = 0 mA;
VI(EN) = 5 V
−
15
30
µA
8 V ≤ VP ≤ 22 V; IREG = 0.5 mA
3.16
3.3
3.44
V
6 V ≤ VP ≤ 45 V; IREG = 0.5 mA
3.13
3.3
3.47
V
0.5 mA ≤ IREG ≤ 100 mA;
VP = 14.4 V
3.13
3.3
3.47
V
VP = 3.1 V; IREG = 50 mA;
Tamb ≤ 85 °C
−
0.18
0.3
V
Voltage regulator
VREG
VREG(drop)
output voltage
dropout voltage
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TDA3673T
SO8
plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
TDA3673AT
SO8
plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
2000 Feb 01
2
Philips Semiconductors
Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator with enable
TDA3673
BLOCK DIAGRAM
handbook, halfpage
VP
8
REGULATOR
EN
5
1
REG
BAND GAP
THERMAL
PROTECTION
TDA3673
2, 3, 6, 7
MGS593
GND
Fig.1 Block diagram.
PINNING
SYMBOL
PIN
DESCRIPTION
REG
1
regulator output
GND
2, 3, 6 and 7
ground; note 1
n.c.
4
not connected
EN
5
enable input
VP
8
supply voltage
handbook, halfpage
Note
REG 1
1. All GND pins are connected to the lead frame and can
also be used to reduce the total thermal resistance
Rth(j-a) by soldering these pins to a ground plane.
The ground plane on the top side of the PCB acts like
a heat spreader.
8 VP
GND 2
7
GND
TDA3673
GND
3
6
GND
n.c.
4
5
EN
MGS594
Fig.2 Pin configuration.
2000 Feb 01
3
Philips Semiconductors
Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator with enable
FUNCTIONAL DESCRIPTION
TDA3673
A temperature protection circuit is included, which
switches off the regulator output at a junction temperature
above 150 °C.
The TDA3673 is a fixed 3.3 V regulator which can deliver
output currents up to 100 mA. The regulator is available in
an SO8 package with fused centre pins connected to the
lead frame. The regulator is intended for portable, mains,
telephone and automotive applications. To increase the
lifetime of batteries, a specially built-in clamp circuit keeps
the quiescent current of this regulator very low, also in
dropout and full load conditions.
A new output circuit guarantees the stability of the
regulator for a capacitor output circuit with an ESR up to
20 Ω. If only a 100 nF capacitor is used, the regulator is
fully stable when IREG > 200 µA. This is very attractive as
the ESR of an electrolytic capacitor increases strongly at
low temperatures (no expensive tantalum capacitor is
required).
The regulator remains operating down to very low supply
voltages and below it switches off.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
supply voltage
VP
TDA3673T
−
33
V
−
45
V
VP(rp)
reverse polarity supply voltage
non-operating
−
−25
V
Ptot
total power dissipation
temperature of copper area
is 25 °C
−
4.1
W
Tstg
storage temperature
non-operating
−55
+150
°C
Tamb
ambient temperature
operating
−40
+85
°C
−40
+125
°C
−40
+150
°C
TDA3673AT
TDA3673T
TDA3673AT
Tj
junction temperature
operating
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
in free air; soldered
125
K/W
Rth(j-c)
thermal resistance from junction to case
to centre pins; soldered
30
K/W
QUALITY SPECIFICATION
In accordance with “SNW-FQ-611E”.
2000 Feb 01
4
Philips Semiconductors
Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator with enable
TDA3673
CHARACTERISTICS
VP = 14.4 V; Tamb = 25 °C; measured in test circuit of Fig.3; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply voltage: pin VP
VP
supply voltage
regulator operating; note 1
TDA3673T
3
TDA3673AT
Iq
quiescent current
14.4
33
V
3
14.4
45
V
VP = 14.4 V; IREG = 0 mA;
VI(EN) = 0 V
−
4
15
µA
VP = 14.4 V; IREG = 0 mA;
VI(EN) = 5 V
−
15
30
µA
6 V ≤ VP ≤ 22 V; IREG = 10 mA
−
0.2
0.5
mA
6 V ≤ VP ≤ 22 V; IREG = 50 mA
−
1.4
2.5
mA
Enable input: pin EN
VI(EN)
II(EN)
enable input voltage
enable input current
enable off; VREG ≤ 0.8 V
−1
−
+1.0
V
enable on; VREG ≥ 3 V
3.0
−
18
V
VI(EN) = 5 V
−
0.3
−
µA
8 V ≤ VP ≤ 22 V; IREG = 0.5 mA
3.16
3.3
3.44
V
Regulator output: pin REG; note 2
VREG
output voltage
VREG(drop)
dropout voltage
VREG(stab)
long-term output voltage
stability
∆VREG(line)
line input regulation voltage
0.5 mA ≤ IREG ≤ 100 mA
3.13
3.3
3.47
V
6 V ≤ VP ≤ 45 V; IREG = 0.5 mA
3.13
3.3
3.47
V
VP = 3.1 V; Tamb ≤ 85 °C;
IREG = 50 mA
−
0.18
0.3
V
−
20
−
mV/1000 h
7 V ≤ VP ≤ 22 V; IREG = 0.5 mA
−
1
30
mV
7 V ≤ VP ≤ 45 V; IREG = 0.5 mA
−
1
50
mV
∆VREG(load) load output regulation voltage
0.5 mA ≤ IREG ≤ 50 mA
−
10
50
mV
SVRR
supply voltage ripple rejection
fi = 120 Hz; Vi(ripple) = 1 V (RMS);
IREG = 0.5 mA
50
60
−
dB
IREG(crl)
current limit
VREG > 2.8 V
0.17
0.25
−
A
ILO(rp)
output leakage current at
reverse polarity input
VP = −15 V; VREG ≤ 0.3 V
−
1
500
µA
Notes
1. The regulator output will follow VP if VP < VREG + VREG(drop).
2. Limiting values as applicable for device type:
a) TDA3673T: VP ≤ 33 V and −40 °C ≤ Tamb ≤ +85 °C.
b) TDA3673AT: VP ≤ 45 V and −40 °C ≤ Tamb ≤ +125 °C.
2000 Feb 01
5
Philips Semiconductors
Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator with enable
TDA3673
TEST AND APPLICATION INFORMATION
MDA961
102
handbook, halfpage
ESR
(Ω)
(1)
10
andbook, halfpage
VP
8
C1(1)
1 µF
VI(EN)
VREG = 3.3 V
C2
10 µF
1
TDA3673
stable region
1
5
2, 3, 6, 7
MGS595
(2)
10−1
10−1
1
10
C2 (µF)
102
(1) Maximum ESR at 200 µA ≤ IREG ≤ 100 mA.
(2) Minimum ESR only when IREG ≤ 200 µA.
VI(EN) = 5 V.
(1) C1 is optional (to minimize supply noise only).
Fig.4
Graph for selecting the value of the output
capacitor.
Fig.3 Test circuit.
Noise
The output noise is determined by the value of the output
capacitor. The noise figure is measured at a bandwidth of
10 Hz to 100 kHz (see Table 1).
Table 1
ESR
(Ω)
Noise figures
OUTPUT
CURRENT
IREG (mA)
C2 = 10 µF
C2 = 47 µF
C2 = 100 µF
0.5
550
320
300
50
650
400
400
NOISE FIGURE (µV)
102
22
10
stable region
Stability
1
The regulator is stabilized with an external capacitor
connected to the output. The value of this capacitor can be
selected using the diagrams shown in Figs 4 and 5.
The following four examples show the effects of the
stabilization circuit using different values for the output
capacitor.
10−1
1
Fig.5
2000 Feb 01
MDA962
103
handbook, halfpage
6
10
102
IREG (mA)
103
ESR as a function of IREG for selecting the
value of the output capacitor.
Philips Semiconductors
Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator with enable
TDA3673
possible to reduce the total thermal resistance from
120 to 50 K/W.
EXAMPLE 1
The regulator is stabilized with an electrolytic capacitor of
68 µF (ESR = 0.5 Ω). At Tamb = −40 °C, the capacitor
value is decreased to 22 µF and the ESR is increased
to 3.5 Ω. The regulator will remain stable at a temperature
of Tamb = −40 °C.
APPLICATION CIRCUIT WITH BACKUP FUNCTION
Sometimes a backup function is needed to supply, for
example, a microcontroller for a short period of time when
the supply voltage spikes to 0 V (or even −1 V).
EXAMPLE 2
This function can be easily built with the TDA3673 by using
a large output capacitor. When the supply voltage is 0 V
(or −1 V), only a small current will flow into pin REG from
this large output capacitor (a few µA).
The regulator is stabilized with an electrolytic capacitor of
10 µF (ESR = 3.3 Ω). At Tamb = −40 °C, the capacitor
value is decreased to 3 µF and the ESR is increased to
20 Ω. The regulator will remain stable at a temperature of
Tamb = −40 °C.
The application circuit is given in Fig.6.
EXAMPLE 3
The regulator is stabilized with a 100 nF MKT capacitor
connected to the output. Full stability is guaranteed when
the output current is larger then 200 µA. Because the
thermal influence on this capacitor value is almost zero,
the regulator will remain stable at a temperature of
Tamb = −40 °C.
ndbook, halfpage
VP
EXAMPLE 4
The regulator is stabilized with a 100 nF capacitor in
parallel with a electrolytic capacitor of 10 µF connected to
the output.
8
C1(1)
1 µF
VI(EN)
The regulator is now stable under all conditions and
independent of:
VREG = 3.3 V
1
C2 (2)
TDA3673
5
2, 3, 6, 7
MGS596
• The ESR of the electrolytic capacitor
• The value of the electrolytic capacitor
• The output current.
VI(EN) = 5 V.
(1) C1 is optional (to minimize supply noise only).
(2) C2 ≤ 4700 µF.
Application circuits
The maximum output current of the regulator equals:
150 – T amb
I REG ( max ) = ----------------------------------------------------R th(j-a) × ( V P – V REG )
Fig.6 Application circuit with backup function.
150 – T amb
= ----------------------------------------- (mA)
100 × ( V P – 3.3 )
When Tamb = 21 °C and VP = 14 V, the maximum output
current equals 116 mA.
For successful operation of the IC (maximum output
current capability) special attention has to be given to the
copper area required as heatsink (connected to all
GND pins), the thermal capacity of the heatsink and its
ability to transfer heat to the external environment. It is
2000 Feb 01
7
Philips Semiconductors
Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator with enable
TDA3673
Additional application information
This section gives typical curves for various parameters measured on the TDA3673AT. Standard test conditions are:
VP = 14.4 V; Tamb = 25 °C.
MDA947
25
Iq
MDA949
4
handbook, halfpage
handbook, halfpage
(µA)
Iq
(mA)
20
3
15
2
10
1
5
0
0
0
20
10
VP (V)
30
0
10
20
40
30
VP (V)
50
IREG = 0 mA.
Fig.7
Quiescent current as a function of the
supply voltage.
Fig.8
MDA951
2
Quiescent current as a function of high
supply voltage.
MDA948
0.48
handbook, halfpage
handbook, halfpage
Iq
(mA)
(1)
Iq
(mA)
1.5
0.44
1
0.40
0.5
(2)
0
−40
0.36
0
40
80
120
160
Tj (°C)
5
(1) Iq at 50 mA load.
(2) Iq at 10 mA load.
Fig.9
15
20
VP (V)
25
IREG = 10 mA.
Quiescent current as a function of the
junction temperature.
2000 Feb 01
10
Fig.10 Quiescent current as a function of the
supply voltage.
8
Philips Semiconductors
Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator with enable
MDA950
2
TDA3673
MDA952
4
handbook, halfpage
handbook, halfpage
Iq
(mA)
Iq
(mA)
3
1.8
2
1.6
1
1.4
0
5
10
20
15
VP (V)
25
0
20
40
60
80
100
IREG (mA)
IREG = 50 mA.
Fig.11 Quiescent current as a function of the
supply voltage.
Fig.12 Quiescent current as a function of the
output current.
MGS694
3.40
MGS695
4
handbook, halfpage
handbook, halfpage
VREG
(V)
VREG
(V)
3
3.35
2
3.30
1
3.25
−50
0
50
100
0
−50
150
200
Tj (°C)
0
50
100
150
200
Tj (°C)
IREG = 0 mA.
IREG = 0 mA.
Fig.13 Output voltage as a function of the junction
temperature.
Fig.14 Output voltage thermal protection as a
function of the junction temperature.
2000 Feb 01
9
Philips Semiconductors
Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator with enable
TDA3673
MDA957
500
MGS696
4
handbook, halfpage
handbook, halfpage
VREG(drop)
VREG
(mV)
(V)
400
3
300
2
200
1
0
100
0
80
40
IREG (mA)
120
0
100
200
IREG (mA)
VP = 8 V with pulsed load.
Fig.15 Dropout voltage as a function of the output
current.
Fig.16 Fold back protection mode.
MDA956
−30
handbook, halfpage
(1)
SVRR
(dB)
−40
(2)
−50
(3)
(1)
−60
(2)
−70
10
(3)
102
103
104
f (Hz)
105
IREG = 10 mA; C2 = 10 µF.
(1) SVRR at RL = 100 Ω.
(2) SVRR at RL = 500 Ω.
(3) SVRR at RL = 10 kΩ.
Fig.17 SVRR as a function of the ripple frequency.
2000 Feb 01
10
300
Philips Semiconductors
Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator with enable
TDA3673
PACKAGE OUTLINE
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
c
y
HE
v M A
Z
5
8
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
4
1
e
detail X
w M
bp
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (2)
e
HE
L
Lp
Q
v
w
y
Z (1)
mm
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
1.0
0.4
0.7
0.6
0.25
0.25
0.1
0.7
0.3
0.01
0.019 0.0100
0.014 0.0075
0.20
0.19
0.16
0.15
0.244
0.039 0.028
0.050
0.041
0.228
0.016 0.024
inches
0.010 0.057
0.069
0.004 0.049
0.01
0.01
0.028
0.004
0.012
θ
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT96-1
076E03
MS-012
2000 Feb 01
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-05-22
99-12-27
11
o
8
0o
Philips Semiconductors
Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator with enable
SOLDERING
TDA3673
If wave soldering is used the following conditions must be
observed for optimal results:
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
Reflow soldering
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Wave soldering
Manual soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
2000 Feb 01
12
Philips Semiconductors
Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator with enable
TDA3673
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
REFLOW(1)
WAVE
BGA, SQFP
not suitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS not
PLCC(3), SO, SOJ
suitable
suitable(2)
suitable
suitable
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
suitable
not
recommended(3)(4)
suitable
not
recommended(5)
suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Feb 01
13
Philips Semiconductors
Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator with enable
NOTES
2000 Feb 01
14
TDA3673
Philips Semiconductors
Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator with enable
NOTES
2000 Feb 01
15
TDA3673
Philips Semiconductors – a worldwide company
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Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
SCA 69
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
753503/02/pp16
Date of release: 2000
Feb 01
Document order number:
9397 750 06801