UBA2028 600 V dimmable power IC for compact fluorescent lamps Rev. 01 — 9 October 2009 Product data sheet 1. General description The UBA2028 is a high voltage power IC that drives and controls electronically ballasted Compact Fluorescent Lamps (CFLs). The IC includes a Metal-Oxide-Semiconductor Transistor (MOST) half bridge power circuit, a dimming function, a high voltage level shift circuit, an oscillator function, a lamp voltage monitor, a current control function, a timer function and protections. 2. Features n n n n n n n n n n n n Two internal 600 V, 3 Ω max MOST half bridge powers. For steady state currents up to 280 mA. For ignition currents up to 1.5 A. Adjustable preheat time. Adjustable preheat current. Current controlled operating. Single ignition attempt. Adaptive non-overlap time control. Integrated high voltage level shift function. Power-down function. Protection against lamp failures or lamp removal. Capacitive mode protection. 3. Applications n 5 W to 25 W dimmable CFLs, provided that the maximum junction temperature is not exceeded. UBA2028 NXP Semiconductors 600 V dimmable power IC for compact fluorescent lamps 4. Quick reference data Table 1. Quick reference data VDD = 13 V; VFS − VSH = 13 V; Tamb = 25 °C; all voltages are referenced to GND; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Start-up state VDD(startup) start-up supply voltage for oscillator 12.4 13.0 13.6 V VDD(stop) stop supply voltage for oscillator 8.6 9.1 9.6 V IDD supply current oscillator start-up; VDD < VDD(startup) - 170 200 µA IHV < 30 µA; t < 1 s - - 600 V Ileak = 10 µA 2.86 2.95 3.04 V High-voltage supply Vhs high-side supply voltage Reference voltage Vref reference voltage Voltage controlled oscillator fmax maximum frequency for bridge; CCF = 100 pF 90 100 110 kHz fmin minimum frequency for bridge; CCF = 100 pF 38.9 40.5 42.1 kHz Half bridge power transistors Ron on-state resistance half bridge power - - 3 Ω ID drain current pulsed; tp limited by Tj(max); T < Tj(max) - - 1.5 A 0.57 0.60 0.63 V Preheat current sensor Vph preheat voltage Lamp voltage sensor Vlamp(fail) lamp fail voltage 0.77 0.81 0.85 V Vlamp(max) maximum lamp voltage 1.44 1.49 1.54 V Average current sensor Voffset offset voltage VCS = 0 V to 2.5 V −2 0 +2 mV gm transconductance f = 1 kHz 1900 3800 5700 µA/mV tph preheat time CCT = 330 nF; RIREF = 33 kΩ 1.6 1.8 2.0 s VOL LOW-level output voltage - 1.4 - V VOH HIGH-level output voltage - 3.6 - V Preheat timer 5. Ordering information Table 2. Ordering information Type number UBA2028T Package Name Description SO20L plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 UBA2028_1 Product data sheet Version © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 2 of 21 xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x 7 3V 2, 3 1 BOOTSTRAP Vpd SUPPLY LEVEL SHIFTER reference voltages digital HS DRIVER LS DRIVER analog UBA2028 GND 18 4 DRIVER LOGIC SH TR2 20 VDD(L) HV TR1 19 supply (5 V) FS 15 NXP Semiconductors 16 6. Block diagram UBA2028_1 Product data sheet VREF VDD SL GLI GL reset 5 VOLTAGE CONTROLLED OSCILLATOR LOGIC COUNTER CT 10 • reset state • start-up state • preheat state • ignition state • burn state • hold state • power-down state PCS 17 PCS AVERAGE CURRENT SENSOR LOGIC LAMP VOLTAGE SENSOR 8 9 REFERENCE CURRENT 13 I Vlamp(fail) V 12 Vlamp(max) 6 FREQUENCY CONTROL 11 014aaa906 Fig 1. Block diagram CF LVS CSW UBA2028 3 of 21 © NXP B.V. 2009. All rights reserved. IREF CSP CSN 600 V dimmable power IC for compact fluorescent lamps Rev. 01 — 9 October 2009 LOGIC ACM ANT/CMD STATE LOGIC PREHEAT TIMER UBA2028 NXP Semiconductors 600 V dimmable power IC for compact fluorescent lamps 7. Pinning information 7.1 Pinning HV 1 20 SL FS 2 19 SH FS 3 18 GLI GND 4 17 PCS ACM 5 LVS 6 VREF 7 14 GND CSP 8 13 IREF CSN 9 12 CF UBA2028 CT 10 16 VDD 15 GL 11 CSW 014aaa904 Fig 2. Pin diagram 7.2 Pin description Table 3. Pin description Symbol Pin Description HV 1 high voltage input FS 2 floating supply voltage; supply for high-side switch FS 3 floating supply voltage; supply for high-side switch GND 4 ground ACM 5 capacitive mode input LVS 6 lamp voltage sensor input VREF 7 reference voltage output CSP 8 positive input for the average current sensor CSN 9 negative input for the average current sensor CT 10 preheat timer output CSW 11 input of voltage controlled oscillator CF 12 voltage controlled oscillator output IREF 13 internal reference current input GND 14 ground GL 15 gate output for the low-side switch, must be wired to pin 18 VDD 16 low-voltage supply PCS 17 preheat current sensor input GLI 18 gate input for the low-side switch, must be wired to pin 15. SH 19 source for the high-side switch SL 20 source low side switch, connected to PGND via a resistor[7] UBA2028_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 4 of 21 UBA2028 NXP Semiconductors 600 V dimmable power IC for compact fluorescent lamps 8. Functional description 8.1 Start-up state Initial start-up can be achieved by charging the low-voltage supply capacitor at pin 16 (see Figure 8 Figure 9) via an external start-up resistor. Start-up of the circuit is achieved under the condition that both half-bridge transistors TR1 and TR2 are non-conductive. The circuit will be reset in the start-up state. If the low-voltage supply (VDD) reaches the value of VDD(startup) the circuit will start oscillating. A DC reset circuit is incorporated in the High-Side (HS) driver. Below the lockout voltage at the FS pin the output voltage (TR1 gate voltage − VSH) is zero. The voltages at pins CF and CT are zero during the start-up state. 8.2 Oscillation The internal oscillator is a Voltage Controlled Oscillator (VCO) circuit which generates a sawtooth waveform between the Vo(osc)max level and 0 V. The frequency of the sawtooth is determined by capacitor CCF, resistor RIREF, and the voltage at pin CSW. The minimum and maximum switching frequencies are determined by RIREF and CCF; their ratio is internally fixed. The sawtooth frequency is twice the half-bridge frequency. The UBA2028 brings the transistors TR1 and TR2 into conduction alternately with a duty cycle of approximately 50 %. An overview of the oscillator signal and driver signals is illustrated in Figure 7. The oscillator starts oscillating at fmax. During the first switching cycle the Low-Side (LS) transistor (TR2) is switched on. The first conducting time is made extra long to enable the bootstrap capacitor to charge. 8.3 Adaptive non-overlap The non-overlap time is realized with an adaptive non-overlap timing circuit (ANT). By using an adaptive non-overlap circuit, the application can determine the duration of the non-overlap time and make it optimum for each frequency; see Figure 7. The non-overlap time is determined by the slope of the half-bridge voltage, and is detected by the signal across resistor R15 see Figure 8 (R6 in Figure 9) which is connected directly to pin ACM. The minimum non-overlap time is internally fixed. The maximum non-overlap time is internally fixed at approximately 25 % of the bridge period time. An internal filter of 30 ns is included at the ACM pin to increase the noise immunity. 8.4 Timing circuit A timing circuit is included to determine the preheat time and the ignition time. The circuit consists of a clock generator and a counter. The preheat time is defined by CCT and RIREF connected to pins 10 and 13, and consists of 7 pulses at CCT; the maximum ignition time is 1 pulse at CCT. The timing circuit starts operating after the start-up state, as soon as the low supply voltage (VDD) has reached VDD(startup) or when a critical value of the lamp voltage (Vlamp(fail)) is exceeded. When the timer is not operating CCT is discharged to 0 V at 1 mA. UBA2028_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 5 of 21 UBA2028 NXP Semiconductors 600 V dimmable power IC for compact fluorescent lamps 8.5 Preheat state After starting at fmax, the frequency decreases until the momentary value of the voltage across sense resistor R21 (see Figure 8) or R5 (Figure 9) reaches the internally fixed preheat voltage level (pin PCS). Detection of the pre-heat voltage occurs during the end of the ‘on-time’ of the low side switch TR2 when the internal pre-heat fixed voltage reference level is exceeded. Once detection has occurred the output current of the Preheat Current Sensor (PCS) circuit discharges the capacitor CCSW, thus raising the frequency. The internal pre-heat control is reset during each “on-time’ of the high side switch TR1, thus CCSW is charged, and the frequency decreases. It remains in this condition when no detection occurs. The preheat time begins at the moment that the circuit starts oscillating. During the preheat time the Average Current Sensor (ACS) circuit is disabled. An internal filter of 30 ns is included at pin PCS to increase the noise immunity. 8.6 Ignition state After the preheat time the ignition state is entered and the frequency will sweep down due to charging of the capacitor at pin CSW with an internally fixed current; see Figure 4. During this continuous decrease in frequency, the circuit approaches the resonant frequency of the load. This will cause a high voltage across the load, which normally ignites the lamp. The ignition voltage of a lamp is designed above the Vlamp(fail) level. If the lamp voltage exceeds the Vlamp(fail) level the ignition timer is started. 8.7 Burn state If the lamp voltage does not exceed the Vlamp(max) level the voltage at pin CSW will continue to increase until the clamp level at pin CSW is reached; see Figure 4. As a consequence the frequency will decrease until the minimum frequency is reached. When the frequency reaches its minimum level it is assumed that the lamp has ignited and the circuit will enter the burn state. The Average Current Sensor (ACS) circuit will be enabled. As soon as the averaged voltage across sense resistor R21 (see Figure 8) or R5 (Figure 9), measured at pin CSN, reaches the reference level at pin CSP, the average current sensor circuit will take over the control of the lamp current. The average current through R21 or R5 is transferred to a voltage at the voltage controlled oscillator and regulates the frequency and, as a result, the lamp current. 8.8 Lamp failure mode 8.8.1 During ignition state If the lamp does not ignite, the voltage level increases. When the lamp voltage exceeds the Vlamp(max) level, the voltage will be regulated at the Vlamp(max) level; see Figure 5. When the Vlamp(fail) level is crossed the ignition timer has already started. If the voltage at pin LVS is above the Vlamp(fail) level at the end of the ignition time the circuit stops oscillating and is forced into the Power-down mode. The circuit will be reset only when the supply voltage is powered down. 8.8.2 During burn state If the lamp fails during normal operation, the voltage across the lamp will increase and the lamp voltage will exceed the Vlamp(fail) level; see Figure 6. At that moment the ignition timer is started. If the lamp voltage increases further it will reach the Vlamp(max) level. This forces the circuit to re-enter the ignition state and results in an attempt to re-ignite the lamp. If UBA2028_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 6 of 21 UBA2028 NXP Semiconductors 600 V dimmable power IC for compact fluorescent lamps during restart the lamp still fails, the voltage remains high until the end of the ignition time. At the end of the ignition time the circuit stops oscillating and the circuit will enter the Power-down mode. 8.9 Power-down mode The Power-down mode will be entered if, at the end of the ignition time, the voltage at pin LVS is above Vlamp(fail). In the Power-down mode the oscillator will be stopped and both TR1 and TR2 will be non-conductive. The VDD supply is internally clamped. The circuit is released from the Power-down mode by lowering the low-voltage supply below VDD(rst). 8.10 Capacitive mode protection The signal across R15 see Figure 8 (R6 in Figure 9) also gives information about the switching behavior of the half bridge. If, after the preheat state, the voltage across the ACM resistor (R15 or R6) does not exceed the Vdet(capm) level during the non-overlap time, the Capacitive Mode Detection circuit (CMD) assumes that the circuit is in the capacitive mode of operation. As a consequence the frequency will directly be increased to fmax. The frequency behavior is de coupled from the voltage at pin CSW until CCSW has been discharged to zero. 8.11 Charge coupling Due to parasitic capacitive coupling to the high voltage circuitry all pins are burdened with a repetitive charge injection. Given the typical application the pins IREF and CF are sensitive to this charge injection. For charge coupling of approximately 8 pC, a safe functional operation of the IC is guaranteed, independent of the current level. Charge coupling at current levels below 50 µA will not interfere with the accuracy of the VCS, Vi(PCS) and Vi(ACM) levels. Charge coupling at current levels below 20 µA will not interfere with the accuracy of any parameter. 8.12 Design equations The following design equations are used to calculate the desired preheat time, the maximum ignition time, and the minimum and the maximum switching frequency. C CT R IREF t ph = 1.8 × ------------------------- × -------------------3–9 330 × 10 33 × 10 (1) C CT R IREF t ign = 0.26 × ------------------------× ------------------–9 3 330 × 10 33 × 10 (2) – 12 3 33 × 10 3 100 × 10 f min = 40.5 × 10 × ---------------------------- × -------------------C CF R IREF (3) f max = 2.5 × f min (4) Start of ignition is defined as the moment at which the measured lamp voltage crosses the Vlamp(fail) level; see Section 8.8. UBA2028_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 7 of 21 UBA2028 NXP Semiconductors 600 V dimmable power IC for compact fluorescent lamps mgw582 VCF 0 V(GH-SH) 0 VGL 0 Vhalfbridge 0 VACM 0 time Fig 3. Oscillator and drive signals Vlamp preheat state ignition state burn state Vlamp(max) Vlamp(fail) f min detection Timer on off time Fig 4. Normal ignition behavior UBA2028_1 Product data sheet mgw583 © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 8 of 21 UBA2028 NXP Semiconductors 600 V dimmable power IC for compact fluorescent lamps Vlamp ignition state preheat state power-down state Vlamp(max) Vlamp(fail) Timer on timer ended off time Fig 5. mgw584 Failure mode during ignition Vlamp burn state ignition state power-down state Vlamp(max) Vlamp(fail) Timer on timer started timer ended off time Fig 6. Failure mode during burn UBA2028_1 Product data sheet mgw585 © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 9 of 21 UBA2028 NXP Semiconductors 600 V dimmable power IC for compact fluorescent lamps 8.13 Layout considerations The connection of PGND and GND is shown in Figure 7 VDD HV GND SH GND PGND IREF CT ACM UBA2028 CF SL PCS CSW VREF CSP CSN PGND 014aaa938 Fig 7. PGND and GND connection UBA2028_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 10 of 21 UBA2028 NXP Semiconductors 600 V dimmable power IC for compact fluorescent lamps 9. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages referenced to GND. Symbol Parameter Conditions Min Max Unit VHV voltage on pin HV operating; during 1 s - 600 V operating - 510 V ID drain current TR1 pulsed; tp limited by Tj(max); T < Tj(max) - 1.5 A TR2 pulsed; tp limited by Tj(max); T < Tj(max) - 1.5 A - 14 V 0 14 V VVDD voltage on pin VDD VFS voltage on pin FS Vi(ACM) input voltage on pin ACM −5 +5 V Vi(PCS) input voltage on pin PCS −5 +5 V Vi(LVS) input voltage on pin LVS 0 5 V Vi(CSP) input voltage on pin CSP 0 5 V Vi(CSN) input voltage on pin CSN −0.3 +5 V Vi(CSW) input voltage on pin CSW SR slew rate Tamb with respect to SH 0 5 V −4 +4 V/ns ambient temperature −25 +80 °C Tj junction temperature −25 +150 °C Tstg storage temperature VESD electrostatic discharge voltage pin SH; repetitive −55 +150 °C pin HV [1] - 1500 V pins FS, SH [1] - 1000 V pin GL [1] - < 500 V pin GL [2] - 150 V [1] In accordance with the human body model, i.e. equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor. [2] In accordance with the machine model, i.e. equivalent to discharging a 200 pF capacitor through a 0.75 µH coil and a 10 Ω resistor. 10. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-a) thermal resistance from junction to ambient SO20L; in free air 75 K/W UBA2028_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 11 of 21 UBA2028 NXP Semiconductors 600 V dimmable power IC for compact fluorescent lamps 11. Characteristics Table 6. Characteristics VDD = 13 V; VFS − VSH = 13 V; Tamb = 25 °C; all voltages referenced to GND; see application circuits of [8] [9] unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Start-up state: pin VDD VDD supply voltage for defined driver output; TR1 = off; TR2 = off - - 6 V VDD(rst) reset supply voltage TR1 = off; TR2 = off 4.5 5.5 7.0 V VDD(startup) start-up supply voltage for oscillator 12.4 13.0 13.6 V VDD(stop) stop supply voltage for oscillator 8.6 9.1 9.6 V VDD(hys) hysteresis of supply voltage for start-stop 3.5 3.9 4.4 V Vclamp(VDD) clamp voltage on pin VDD Power-down mode 10 11 12 V IDD supply current oscillator start-up; VDD < VDD(startup) - 170 200 µA IDD(pd) power-down supply current VDD = 9 V - 170 200 µA High voltage supply: pins HV, SH and FS Vhs high-side supply voltage IHV < 30 µA; t < 1 s - - 600 V Ileak leakage current 600 V at high-voltage pins - - 30 µA Reference voltage: pin VREF Vref reference voltage Ileak = 10 µA 2.86 2.95 3.04 V ∆Vref/Vref relative reference voltage variation Ileak = 10 µA; Tamb = 25 °C to 150 °C - −0.64 - % Isource source current 1 - - mA Isink sink current 1 - - mA Zo output impedance - 3.0 - Ω - 2.5 - V reference range 65 - 95 µA Ileak = 1 mA source Current supply: pin IREF VI input voltage II input current Voltage controlled oscillator Output: pin CSW VO output voltage for control 2.7 3.0 3.3 V Vclamp clamp voltage burn state 2.8 3.1 3.4 V Voltage controlled oscillator output: pin CF fmax maximum frequency for bridge; CCF = 100 pF 90 100 110 kHz fmin minimum frequency for bridge; CCF = 100 pF 38.9 40.5 42.1 kHz ∆f/f relative frequency variation Tamb = −20 °C to +80 °C - 1.3 - % tstart start time first output oscillator stroke - 50 - µs tno(min) minimum non-overlap time TR1 to TR2 gate voltages 0.68 0.90 1.13 µs 0.75 1.00 1.25 µs - 7.5 - µs - 2.5 - V TR2 to TR1 gate voltages tno(max) maximum non-overlap time fbridge = 40 kHz VO(osc)max maximum oscillator output voltage f = fmin UBA2028_1 Product data sheet [1] © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 12 of 21 UBA2028 NXP Semiconductors 600 V dimmable power IC for compact fluorescent lamps Table 6. Characteristics …continued VDD = 13 V; VFS − VSH = 13 V; Tamb = 25 °C; all voltages referenced to GND; see application circuits of [8] [9] unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Io(startup) start-up output current for oscillator; VCF = 1.5 V 3.8 4.5 5.2 µA Iosc oscillator current VCF = 1.5 V 21 - 54 µA 12.5 - - V Output driver Low-side driver output: pin GL VOH HIGH-level output voltage Io = 10 mA VOL LOW-level output voltage Io = 10 mA - - 0.5 V IO(source) output source current VGL = 0 V 135 180 235 mA Isink(o) output sink current VGL = 13 V 265 330 415 mA Ron on-state resistance Io = 10 mA 32 39 45 Ω Roff off-state resistance Io = 10 mA 16 21 26 Ω TR1 high side power - - 3 Ω TR2 low side power - - 3 Ω - 2.7 - - Output stage Power transistors Ron on-state resistance Ron(150)/Ron(25) on-state resistance ratio (150 °C to 25 °C) Floating supply voltage: pin FS VFS voltage on pin FS for lockout 2.8 3.5 4.2 V IFS current on pin FS DC level at TR1 gate voltage − VSH = 13 V - 35 - µA bootstrap diode forward voltage I = 5 mA 1.3 1.7 2.1 V Vi(PCS) = 0.6 V - - 1 µA 0.57 0.60 0.63 V Bootstrap diode VFd(bs) Preheat current sensor Input: pin PCS II input current Vph preheat voltage Output: pin CSW Isource(o) output source current Vi(CSW) = 2.0 V 9.0 10 11 µA Isink(o) output sink current Vi(CSW) = 2.0 V - 10 - µA Adaptive non-overlap and capacitive mode detection; pin ACM II input current Vi(ACM) = 0.6 V - - 1 µA Vdet(capm) capacitive mode detection voltage positive 80 100 120 mV negative −68 −85 −102 mV II input current Vi(LVS) = 0.81 V - - 1 µA Vlamp(fail) lamp fail voltage 0.77 0.81 0.85 V Vlamp(fail)hys lamp fail voltage hysteresis 119 144 169 mV Vlamp(max) maximum lamp voltage 1.44 1.49 1.54 V 27 30 33 µA Input: pin LVS Output: pin CSW Isink(o) output sink current Vi(CSW) = 2.0 V UBA2028_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 13 of 21 UBA2028 NXP Semiconductors 600 V dimmable power IC for compact fluorescent lamps Table 6. Characteristics …continued VDD = 13 V; VFS − VSH = 13 V; Tamb = 25 °C; all voltages referenced to GND; see application circuits of [8] [9] unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Isource(o) output source current Vi(CSW) = 2.0 V 9.0 10 11 µA Average current sensor Input: pins CSP and CSN II input current VCS = 0 V - - 1 µA Voffset offset voltage Vi(CSP) = Vi(CSN) = 0 V to 2.5 V −2 0 +2 mV gm transconductance f = 1 kHz 1900 3800 5700 µA/mV source and sink; Vi(CSW) = 2 V 85 95 105 µA Output: pin CSW output current Io Preheat timer; pin CT tph preheat time CCT = 330 nF; RIREF = 33 kΩ 1.6 1.8 2.0 s tign ignition time CCT = 330 nF; RIREF = 33 kΩ - 0.32 - s Io output current Vo(CT) = 2.5 V 5.5 5.9 6.3 µA VOL LOW-level output voltage - 1.4 - V VOH HIGH-level output voltage - 3.6 - V Vhys hysteresis voltage 2.05 2.20 2.35 V [1] for output The maximum non-overlap time is determined by the level of the CF signal. If this signal exceeds a level of 1.25 V, the non-overlap will end, resulting in a maximum non-overlap time of 7.5 µs at a bridge frequency of 40 kHz. UBA2028_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 14 of 21 UBA2028 NXP Semiconductors 600 V dimmable power IC for compact fluorescent lamps 12. Application information D1D1 HER107 C2 22 µF 200V R1 D1C1 HER107 L FUSISTOR 2.2 Ω 1 W C5 100 nF 400 V 120 V AC 60 Hz C8 22 nF 250 V C11 3.9 nF 1000 V D8 1N4148 R19 1 kΩ N.M. R9 47 kΩ C4 3.3 nF 250 V N.M. N L2 6.8 mH R14 150 kΩ D3 75V R12 0Ω R13 120 kΩ C10 1nF 700V C16 470nF 50V C6 22 nF 250 V D1B1 HER107 D1A1 HER107 D12 5.1 V R11 68 kΩ R26 22 kΩ R2 33 kΩ C22 470 nF 50V C27 4.7 µF 50V C1 22 µF 200V R8 220 kΩ R10 110 kΩ 12 V C12 100 nF R6 27 kΩ HV R23 VREF 6.8 MΩ CSP IREF CF CT R7 33 kΩ C25 100 pF C9 220 nF C20 220 nF CSW LVS 1 VDD 16 FS 3 C13 100 nF FS 7 2 SH 19 8 GLI 18 13 UBA2028 12 15 10 9 GL 5 6 4 14 R16 5.1 kΩ GND 20 L1 2.5 mH R12 22 kΩ N.M. C31 82 nF 250 V C17 C14 1 nF 400 V L1B1 1.8 µH CFL 18 W 150 V RMS C30 82 nF 250 V 68 nF C15 1 nF 1000 V CSN 11 GND C23 10 nF N.M. L1A1 1.8 µH D5 1N4148 ACM D23 12 V C26 5.6 nF 17 SL PCS R15 2.4 Ω 1W R21 1Ω R17 D5 1 kΩ 1N4935 R18 33 Ω 1W C21 470 nF D7 1N4935 014aaa916 Fig 8. Application circuit 120 V UBA2028_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 15 of 21 UBA2028 NXP Semiconductors 600 V dimmable power IC for compact fluorescent lamps Cin 1800 pF 1000 V R3 R12 220 kΩ 330 kΩ R7 62 kΩ C5 100 nF D4 BAS16H D2 D16 RS1PJ RS1PJ L3 C6 C1 10 µF 400 V R20 220 kΩ 0.5 W HV FS 1 20 2 19 3 18 FS GND R9 220 kΩ 0.5 W ACM LVS VREF R28 C28 4.7 µF D11 D8 R 19 5.1 V BAS16H 22 kΩ R21 22 kΩ R22 22 kΩ R13 22 kΩ 3 MΩ CSP CSN C29 4.7 µF CT 4 5 17 UBA2028 16 6 15 7 14 8 13 9 12 10 11 D1 2 AC 1 47 nF 400 V C8 1 nF 1000 V SL C20 3.9 nF 1000 V SH GLI C7 5.6 nF PCS D3 12 V VDD GL R5 1Ω2W L3A 1.8 µH R6 2.4Ω L3B 1.8 µH C22 220 nF GND C23 220 nF IREF EF20-CFL CF CSW C3 220 nF V+ C19 2.5 mH 100 nF R4 33 kΩ C2 220 nF DFS10S V− 4 AC 3 R10 1 kΩ C9 10 nF C4 100 pF C12 47 nF 400 V L1 8.2 mH C11 R8 D5 33 kΩ RS1PD D7 RS1PD 47 nF 400 V R1 4.7 Ω 1W L 230 V AC C30 470 pF R15 30 Ω 2W R14 15 Ω 1W C27 470 nF D6 RS1PD N 014aaa917 Fig 9. Application circuit 230 V 13. Test information 13.1 Quality information 13.1.1 Safety: Electric, Magnetic and ElectroMagnetic Fields (EMF) • NXP Semiconductors manufactures and sells many products, which, like any electronic apparatus, in general may have the ability to emit and receive electromagnetic signals. • One of NXP Semiconductors’ leading business principles is to take health and safety measures for our products, to comply with all applicable legal requirements and to stay well within the EMF standards applicable at the time of printing this document for each individual product. • NXP Semiconductors aims, at all times, to supply safe products and services. UBA2028_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 16 of 21 UBA2028 NXP Semiconductors 600 V dimmable power IC for compact fluorescent lamps • The consensus of scientific opinion is that EMF exposure below the limits prescribed by safety standards and recommendations, applicable at the time of printing this document, poses no risk to human health. • NXP Semiconductors plays an active role in the development of international EMF and safety standards, enabling NXP Semiconductors to anticipate further developments in standardization for early integration in its products. • Additional information can be obtained from: – Institute of Electrical and Electronic Engineers (www.ieee.org) – Office of Communications (www.ofcom.org.uk) – EU pages on EMF and Public Health (ec.europa.eu/health/index_en.htm). UBA2028_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 17 of 21 UBA2028 NXP Semiconductors 600 V dimmable power IC for compact fluorescent lamps 14. Package outline SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 D E A X c HE y v M A Z 11 20 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 10 e bp detail X w M 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y mm 2.65 0.3 0.1 2.45 2.25 0.25 0.49 0.36 0.32 0.23 13.0 12.6 7.6 7.4 1.27 10.65 10.00 1.4 1.1 0.4 1.1 1.0 0.25 0.25 0.1 0.01 0.019 0.013 0.014 0.009 0.51 0.49 0.30 0.29 0.05 0.419 0.043 0.055 0.394 0.016 inches 0.1 0.012 0.096 0.004 0.089 0.043 0.039 0.01 0.01 Z (1) 0.9 0.4 0.035 0.004 0.016 θ o 8 o 0 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT163-1 075E04 MS-013 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-19 Fig 10. Package outline SOT163-1 (SO20) UBA2028_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 18 of 21 UBA2028 NXP Semiconductors 600 V dimmable power IC for compact fluorescent lamps 15. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes UBA2028_1 20091009 Product data sheet - - UBA2028_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 19 of 21 UBA2028 NXP Semiconductors 600 V dimmable power IC for compact fluorescent lamps 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 16.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] UBA2028_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 20 of 21 UBA2028 NXP Semiconductors 600 V dimmable power IC for compact fluorescent lamps 18. Contents 1 2 3 4 5 6 7 7.1 7.2 8 8.1 8.2 8.3 8.4 8.5 8.6 8.7 8.8 8.8.1 8.8.2 8.9 8.10 8.11 8.12 8.13 9 10 11 12 13 13.1 13.1.1 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 Functional description . . . . . . . . . . . . . . . . . . . 5 Start-up state . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Oscillation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Adaptive non-overlap . . . . . . . . . . . . . . . . . . . . 5 Timing circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Preheat state . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Ignition state . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Burn state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Lamp failure mode . . . . . . . . . . . . . . . . . . . . . . 6 During ignition state . . . . . . . . . . . . . . . . . . . . . 6 During burn state . . . . . . . . . . . . . . . . . . . . . . . 6 Power-down mode . . . . . . . . . . . . . . . . . . . . . . 7 Capacitive mode protection . . . . . . . . . . . . . . . 7 Charge coupling . . . . . . . . . . . . . . . . . . . . . . . . 7 Design equations . . . . . . . . . . . . . . . . . . . . . . . 7 Layout considerations . . . . . . . . . . . . . . . . . . . 10 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 11 Thermal characteristics. . . . . . . . . . . . . . . . . . 11 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 12 Application information. . . . . . . . . . . . . . . . . . 15 Test information . . . . . . . . . . . . . . . . . . . . . . . . 16 Quality information . . . . . . . . . . . . . . . . . . . . . 16 Safety: Electric, Magnetic and ElectroMagnetic Fields (EMF) . . . . . . . . . . . . 16 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 19 Legal information. . . . . . . . . . . . . . . . . . . . . . . 20 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Contact information. . . . . . . . . . . . . . . . . . . . . 20 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 9 October 2009 Document identifier: UBA2028_1