UBA2014 600 V driver IC for HF fluorescent lamps Rev. 04 — 16 October 2008 Product data sheet 1. General description The IC is a monolithic integrated circuit for driving electronically ballasted fluorescent lamps, with mains voltages up to 277 V (RMS) (nominal value). The circuit is made in a 650 V Bipolar CMOS DMOS (BCD) power-logic process. It provides the drive function for the two discrete power MOSFETs. Besides the drive function, the IC also includes the level-shift circuit, the oscillator function, a lamp voltage monitor, a current control function, a timer function and protections. 2. Features n n n n n n n n n Adjustable preheat time Adjustable preheat current Current controlled operating Single ignition attempt Adaptive non-overlap time control Integrated high-voltage level-shift function Power-down function Protection against lamp failures or lamp removal Capacitive mode protection 3. Applications n The circuit topology enables a broad range of ballast applications at different mains voltages for driving lamp types from T8, T5, PLC, T10, T12, PLL and PLT, for example. UBA2014 NXP Semiconductors 600 V driver IV for HF fluorescent lamps 4. Quick reference data Table 1. Quick reference data VDD = 13 V; VFVDD − VSH = 13 V; Tamb = 25 °C; all voltages are referenced to GND; see test circuit of Figure 8; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Start-up state VDD(stop) oscillator stop supply voltage 8.6 9.1 9.6 V VDD(start) oscillator start supply voltage 12.4 13.0 13.6 V IDD(start) oscillator start-up supply current VDD < VDD(start) - 170 200 µA IHS < 30 µA - - 570 V IL = 10 µA 2.86 2.95 3.04 V High-voltage supply high-side supply voltage VHS Reference voltage reference voltage VVREF Voltage controlled oscillator fmax maximum bridge frequency 90 100 110 kHz fmin minimum bridge frequency 38.9 40.5 42.1 kHz High-side output driver Io(source) output source current VGH − VSH = 0 V 135 180 235 mA Io(sink) output sink current VGH − VSH = 13 V 265 330 415 mA 0.57 0.60 0.63 V Preheat current sensor preheat voltage Vph Lamp voltage sensor Vlamp(fail) lamp fail voltage 0.77 0.81 0.85 V Vlamp(max) maximum lamp voltage 1.44 1.49 1.54 V Average current sensor Voffset offset voltage VCSP = VCSN = 0 V to 2.5 V −2 0 +2 mV gm transconductance f = 1 kHz 1900 3800 5700 µA/mV tph preheat time CCT = 330 nF; RIREF = 33 kΩ 1.6 1.8 2.0 s VOL LOW-level output voltage - 1.4 - V VOH HIGH-level output voltage - 3.6 - V Preheat timer 5. Ordering information Table 2. Ordering information Type number Package Name Description Version UBA2014T SO16 plastic small outline package; 16 leads; body width 3.9 mm SOT109-1 UBA2014P DIP16 plastic dual in-line package; 16 leads (300 mil); long body SOT38-1 UBA2014_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 16 October 2008 2 of 19 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NXP Semiconductors UBA2014_4 Product data sheet 6. Block diagram VREF VDD 7 14 3V 9 Vpd SUPPLY BOOTSTRAP LEVEL SHIFTER reference voltages digital FVDD HS DRIVER 10 11 supply (5 V) LS DRIVER analog UBA2014 6 GH SH GL VDD(L) GND 5 DRIVER LOGIC reset COUNTER 1 8 LAMP VOLTAGE SENSOR 15 16 AVERAGE CURRENT SENSOR I Vlamp(fail) V Fig 1. Block diagram PCS 13 FREQUENCY CONTROL 2 CF LVS CSW CSP CSN UBA2014 3 Vlamp(max) mgw579 IREF ACM 600 V driver IV for HF fluorescent lamps 3 of 19 © NXP B.V. 2008. All rights reserved. 4 PCS 12 LOGIC VOLTAGE CONTROLLED OSCILLATOR REFERENCE CURRENT • reset state • start-up state • preheat state • ignition state • burn state • hold state • power-down state LOGIC Rev. 04 — 16 October 2008 LOGIC CT ANT/CMD STATE LOGIC PREHEAT TIMER UBA2014 NXP Semiconductors 600 V driver IV for HF fluorescent lamps 7. Pinning information 7.1 Pinning CT 1 16 CSN CT 1 16 CSN CSW 2 15 CSP CSW 2 15 CSP CF 3 14 VREF CF 3 14 VREF IREF 4 13 LVS IREF 4 GND 5 12 ACM 13 LVS UBA2014P UBA2014T GND 5 12 ACM GL 6 11 SH GL 6 11 SH VDD 7 10 GH VDD 7 10 GH PCS 8 PCS 8 9 FVDD 001aad405 Fig 2. 9 FVDD 001aad486 Pin configuration (SO16) Fig 3. Pin configuration (DIP16) 7.2 Pin description Table 3. Pin description Symbol Pin Description CT 1 preheat timer output CSW 2 input of voltage controlled oscillator CF 3 voltage controlled oscillator output IREF 4 internal reference current input GND 5 ground GL 6 gate output for the low-side switch VDD 7 low-voltage supply PCS 8 preheat current sensor input FVDD 9 floating supply voltage; supply for high-side switch GH 10 gate output for the high-side switch SH 11 source for the high-side switch ACM 12 capacitive mode input LVS 13 lamp voltage sensor input VREF 14 reference voltage output CSP 15 positive input for the average current sensor CSN 16 negative input for the average current sensor UBA2014_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 16 October 2008 4 of 19 UBA2014 NXP Semiconductors 600 V driver IV for HF fluorescent lamps 8. Functional description 8.1 Start-up state Initial start-up can be achieved by charging the low-voltage supply capacitor C7 (see Figure 8) via an external start-up resistor. Start-up of the circuit is achieved under the condition that both half bridge transistors TR1 and TR2 are non-conductive. The circuit will be reset in the start-up state. If the low-voltage supply (VDD) reaches the value of VDD(start) the circuit will start oscillating. A DC reset circuit is incorporated in the High-Side (HS) driver. Below the lockout voltage at the FVDD pin the output voltage (VGH − VSH) is zero. The voltages at pins CF and CT are zero during the start-up state. 8.2 Oscillation The internal oscillator is a Voltage Controlled Oscillator (VCO) circuit which generates a sawtooth waveform between the VCF(high) level and 0 V. The frequency of the sawtooth is determined by capacitor CCF, resistor RIREF, and the voltage at pin CSW. The minimum and maximum switching frequencies are determined by RIREF and CCF; their ratio is internally fixed. The sawtooth frequency is twice the half bridge frequency. The UBA2014 brings the transistors TR1 and TR2 into conduction alternately with a duty cycle of approximately 50 %. An overview of the oscillator signal and driver signals is illustrated in Figure 4. The oscillator starts oscillating at fmax. During the first switching cycle the Low-Side (LS) transistor is switched on. The first conducting time is made extra long to enable the bootstrap capacitor to charge. 8.3 Adaptive non-overlap The non-overlap time is realized with an Adaptive Non-overlap circuiT (ANT). By using an adaptive non-overlap circuit, the application can determine the duration of the non-overlap time and make it optimum for each frequency; see Figure 4. The non-overlap time is determined by the slope of the half bridge voltage, and is detected by the signal across resistor R16 which is connected directly to pin ACM. The minimum non-overlap time is internally fixed. The maximum non-overlap time is internally fixed at approximately 25 % of the bridge period time. An internal filter of 30 ns is included at the ACM pin to increase the noise immunity. 8.4 Timing circuit A timing circuit is included to determine the preheat time and the ignition time. The circuit consists of a clock generator and a counter. The preheat time is defined by CCT and RIREF and consists of 7 pulses at CCT; the maximum ignition time is 1 pulse at CCT. The timing circuit starts operating after the start-up state, as soon as the low supply voltage (VDD) has reached VDD(start) or when a critical value of the lamp voltage (Vlamp(fail)) is exceeded. When the timer is not operating CCT is discharged to 0 V at 1 mA. UBA2014_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 16 October 2008 5 of 19 UBA2014 NXP Semiconductors 600 V driver IV for HF fluorescent lamps 8.5 Preheat state After starting at fmax, the frequency decreases until the momentary value of the voltage across sense resistor R14 reaches the internally fixed preheat voltage level (pin PCS). At crossing the preheat voltage level, the output current of the Preheat Current Sensor (PCS) circuit discharges the capacitor CCSW, thus raising the frequency. The preheat time begins at the moment that the circuit starts oscillating. During the preheat time the Average Current Sensor (ACS) circuit is disabled. An internal filter of 30 ns is included at pin PCS to increase the noise immunity. 8.6 Ignition state After the preheat time the ignition state is entered and the frequency will sweep down due to charging of the capacitor at pin CSW with an internally fixed current; see Figure 5. During this continuous decrease in frequency, the circuit approaches the resonant frequency of the load. This will cause a high voltage across the load, which normally ignites the lamp. The ignition voltage of a lamp is designed above the Vlamp(fail) level. If the lamp voltage exceeds the Vlamp(fail) level the ignition timer is started. 8.7 Burn state If the lamp voltage does not exceed the Vlamp(max) level the voltage at pin CSW will continue to increase until the clamp level at pin CSW is reached; see Figure 5. As a consequence the frequency will decrease until the minimum frequency is reached. When the frequency reaches its minimum level it is assumed that the lamp has ignited and the circuit will enter the burn state. The ACS circuit will be enabled. As soon as the averaged voltage across sense resistor R14, measured at pin CSN, reaches the reference level at pin CSP, the average current sensor circuit will take over the control of the lamp current. The average current through R14 is transferred to a voltage at the voltage controlled oscillator and regulates the frequency and, as a result, the lamp current. 8.8 Lamp failure mode 8.8.1 During ignition state If the lamp does not ignite, the voltage level increases. When the lamp voltage exceeds the Vlamp(max) level, the voltage will be regulated at the Vlamp(max) level; see Figure 6. When the Vlamp(fail) level is crossed the ignition timer has already started. If the voltage at pin LVS is above the Vlamp(fail) level at the end of the ignition time the circuit stops oscillating and is forced into the Power-down mode. The circuit will be reset only when the supply voltage is powered down. 8.8.2 During burn state If the lamp fails during normal operation, the voltage across the lamp will increase and the lamp voltage will exceed the Vlamp(fail) level; see Figure 7. At that moment the ignition timer is started. If the lamp voltage increases further it will reach the Vlamp(max) level. This forces the circuit to reenter the ignition state and results in an attempt to re-ignite the lamp. If during restart the lamp still fails, the voltage remains high until the end of the ignition time. At the end of the ignition time the circuit stops oscillating and the circuit will enter the Power-down mode. UBA2014_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 16 October 2008 6 of 19 UBA2014 NXP Semiconductors 600 V driver IV for HF fluorescent lamps 8.9 Power-down mode The Power-down mode will be entered if, at the end of the ignition time, the voltage at pin LVS is above Vlamp(fail). In the Power-down mode the oscillator will be stopped and both TR1 and TR2 will be non-conductive. The VDD supply is internally clamped. The circuit is released from the Power-down mode by lowering the low-voltage supply below VDD(reset). 8.10 Capacitive mode protection The signal across R16 also gives information about the switching behavior of the half bridge. If, after the preheat state, the voltage across the ACM resistor (R16) does not exceed the VCMD level during the non-overlap time, the Capacitive Mode Detection (CMD) circuit assumes that the circuit is in the capacitive mode of operation. As a consequence the frequency will directly be increased to fmax. The frequency behavior is decoupled from the voltage at pin CSW until CCSW has been discharged to zero. 8.11 Charge coupling Due to parasitic capacitive coupling to the high voltage circuitry all pins are burdened with a repetitive charge injection. Given the typical application the pins IREF and CF are sensitive to this charge injection. For charge coupling of approximately 8 pC, a safe functional operation of the IC is guaranteed, independent of the current level. Charge coupling at current levels below 50 µA will not interfere with the accuracy of the VCS, VPCS and VACM levels. Charge coupling at current levels below 20 µA will not interfere with the accuracy of any parameter. 8.12 Design equations The following design equations are used to calculate the desired preheat time, the maximum ignition time, and the minimum and the maximum switching frequency. C CT R IREF t ph = 1.8 × ------------------------- × -------------------3–9 330 × 10 33 × 10 (1) C CT R IREF t ign = 0.26 × ------------------------× ------------------–9 3 330 × 10 33 × 10 (2) – 12 3 33 × 10 3 100 × 10 f min = 40.5 × 10 × ---------------------------- × -------------------C CF R IREF (3) f max = 2.5 × f min (4) Start of ignition is defined as the moment at which the measured lamp voltage crosses the Vlamp(fail) level; see Section 8.8. UBA2014_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 16 October 2008 7 of 19 UBA2014 NXP Semiconductors 600 V driver IV for HF fluorescent lamps mgw582 VCF 0 V(GH-SH) 0 VGL 0 Vhalfbridge 0 VACM 0 time Fig 4. Oscillator and driver signals Vlamp preheat state ignition state burn state Vlamp(max) Vlamp(fail) f min detection Timer on off time Fig 5. Normal ignition behavior UBA2014_4 Product data sheet mgw583 © NXP B.V. 2008. All rights reserved. Rev. 04 — 16 October 2008 8 of 19 UBA2014 NXP Semiconductors 600 V driver IV for HF fluorescent lamps Vlamp ignition state preheat state power-down state Vlamp(max) Vlamp(fail) Timer on timer ended off time Fig 6. mgw584 Failure mode during ignition Vlamp burn state ignition state power-down state Vlamp(max) Vlamp(fail) Timer on timer started timer ended off time Fig 7. Failure mode during burn UBA2014_4 Product data sheet mgw585 © NXP B.V. 2008. All rights reserved. Rev. 04 — 16 October 2008 9 of 19 UBA2014 NXP Semiconductors 600 V driver IV for HF fluorescent lamps 9. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages referenced to GND. Symbol Parameter Conditions Min Max Unit VHS high-side supply voltage IHS < 30 µA; t < 1 s - 600 V - 570 V VVDD voltage at pin VDD - 14 V VACM voltage at pin ACM −5 +5 V VPCS voltage at pin PCS −5 +5 V IHS < 30 µA VLVS voltage at pin LVS 0 5 V VCSP voltage at pin CSP 0 5 V VCSN voltage at pin CSN −0.3 +5 V VCSW voltage at pin CSW 0 5 V Tamb ambient temperature −25 +80 °C Tj junction temperature −25 +150 °C Tstg storage temperature −55 +150 °C Vesd electrostatic discharge voltage [1] pins FVDD, GH and SH [1] −1000 +1000 V pins CT, CSW, CF, IREF, GL, VDD, PCS, CSN, CSP, VREF, LVS and ACM [1] −2500 +2500 V In accordance with the human body model, i.e. equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor. 10. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-pin) Typ Unit SO16 100 K/W DIP16 60 K/W SO16 50 K/W DIP16 30 K/W thermal resistance from junction to pin in free air UBA2014_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 16 October 2008 10 of 19 UBA2014 NXP Semiconductors 600 V driver IV for HF fluorescent lamps 11. Characteristics Table 6. Characteristics VDD = 13 V; VFVDD − VSH = 13 V; Tamb = 25 °C; all voltages referenced to GND; see test circuit of Figure 8; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Start-up state: pin VDD VDD supply voltage TR1 = off; TR2 = off - - 6 V VDD(reset) reset supply voltage TR1 = off; TR2 = off 4.5 5.5 7.0 V VDD(stop) oscillator stop supply voltage 8.6 9.1 9.6 V VDD(start) oscillator start supply voltage 12.4 13.0 13.6 V VDD(hys) start-stop hysteresis supply voltage 3.5 3.9 4.4 V VDD(clamp) clamp supply voltage Power-down mode 10 11 12 V IDD(start) start-up supply current VDD < VDD(start) - 170 200 µA IDD(pd) power-down supply current VDD = 9 V - 170 200 µA IDD supply current fbridge = 40 kHz without gate drive - 1.5 2.2 mA 600 V at high-voltage pins - - 30 µA High-voltage supply: pins GH, SH and FVDD IL latching current Reference voltage: pin VREF Vref reference voltage IL = 10 µA 2.86 2.95 3.04 V ∆VVREF reference voltage stability IL = 10 µA; Tamb = 25 °C to 150 °C - −0.64 - % Isource source current 1 - - mA Isink sink current 1 - - mA Zo output impedance - 3.0 - Ω IL = 1 mA source Current supply: pin IREF VI input voltage - 2.5 - V II input current 65 - 95 µA 2.7 3.0 3.3 V 2.8 3.1 3.4 V Voltage controlled oscillator Output: pin CSW Vo output control voltage Vclamp clamp voltage burn state Voltage controlled oscillator output: pin CF fmax maximum frequency 90 100 110 kHz fmin minimum frequency 38.9 40.5 42.1 kHz ∆fstab frequency stability Tamb = −20 °C to +80 °C - 1.3 - % tstart first output oscillator stroke time - 50 - µs tno(min) minimum non-overlap time GH to GL 0.68 0.90 1.13 µs 0.75 1.00 1.25 µs - 7.5 - µs - 2.5 - V GL to GH tno(max) maximum non-overlap time fbridge = 40 kHz VCF(high) high-level oscillator output voltage f = fmin UBA2014_4 Product data sheet [1] © NXP B.V. 2008. All rights reserved. Rev. 04 — 16 October 2008 11 of 19 UBA2014 NXP Semiconductors 600 V driver IV for HF fluorescent lamps Table 6. Characteristics …continued VDD = 13 V; VFVDD − VSH = 13 V; Tamb = 25 °C; all voltages referenced to GND; see test circuit of Figure 8; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Io(start) oscillator output start current VCF = 1.5 V 3.8 4.5 5.2 µA Io(min) minimum oscillator output current VCF = 1.5 V - 21 - µA Io(max) maximum oscillator output current VCF = 1.5 V - 54 - µA Output drivers High-side driver output: pin GH VOH HIGH-level output voltage Io = 10 mA 12.5 - - V VOL LOW-level output voltage Io = 10 mA - - 0.5 V Io(source) output source current VGH − VSH = 0 V 135 180 235 mA Io(sink) output sink current VGH − VSH = 13 V 265 330 415 mA Ron on resistance Io = 10 mA 32 39 45 Ω Roff off resistance Io = 10 mA 16 21 26 Ω Low-side driver output: pin GL VOH HIGH-level output voltage Io = 10 mA 12.5 - - V VOL LOW-level output voltage Io = 10 mA - - 0.5 V Io(source) output source current VGL = 0 135 200 235 mA Io(sink) output sink current VGL = 13 V 265 330 415 mA Ron on resistance Io = 10 mA 32 39 45 Ω Roff off resistance Io = 10 mA 16 21 26 Ω 2.8 3.5 4.2 V DC level at VGH − VSH = 13 V - 35 - µA I = 5 mA 1.3 1.7 2.1 V VPCS = 0.6 V - - 1 µA 0.57 0.60 0.63 V Floating supply voltage: pin FVDD VFVDD lockout voltage IFVDD floating well supply current Bootstrap diode Vboot bootstrap diode forward drop voltage Preheat current sensor Input: pin PCS Ii input current Vph preheat voltage Output: pin CSW Io(source) output source current VCSW = 2.0 V 9.0 10 11 µA Io(sink) output sink current VCSW = 2.0 V - 10 - µA - - 1 µA Adaptive non-overlap and capacitive mode detection; pin ACM Ii input current VACM = 0.6 V VCMDP positive capacitive mode detection voltage 80 100 120 mV VCMDN negative capacitive mode detection voltage −68 −85 −102 mV UBA2014_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 16 October 2008 12 of 19 UBA2014 NXP Semiconductors 600 V driver IV for HF fluorescent lamps Table 6. Characteristics …continued VDD = 13 V; VFVDD − VSH = 13 V; Tamb = 25 °C; all voltages referenced to GND; see test circuit of Figure 8; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VLVS = 0.81 V - - 1 µA 0.77 0.81 0.85 V 119 144 169 mV 1.44 1.49 1.54 V Lamp voltage sensor Input: pin LVS Ii input current Vlamp(fail) lamp fail voltage Vlamp(fail)(hys) lamp fail hysteresis voltage Vlamp(max) maximum lamp voltage Output: pin CT Io(sink) output sink current VCSW = 2.0 V 27 30 33 µA Io(source) ignition output source current VCSW = 2.0 V 9.0 10 11 µA Average current sensor Input: pins CSP and CSN Ii input current VCS = 0 V - - 1 µA Voffset offset voltage VCSP = VCSN = 0 V to 2.5 V −2 0 +2 mV gm transconductance f = 1 kHz 1900 3800 5700 µA/mV source and sink; VCSW = 2 V 85 95 105 µA Output: pin CSW output current Io Preheat timer; pin CT tph preheat time CCT = 330 nF; RIREF = 33 kΩ 1.6 1.8 2.0 s tign ignition time CCT = 330 nF; RIREF = 33 kΩ - 0.32 - s Io output current VCT = 2.5 V 5.5 5.9 6.3 µA VOL LOW-level output voltage - 1.4 - V VOH HIGH-level output voltage - 3.6 - V Vhys hysteresis voltage 2.05 2.20 2.35 V [1] The maximum non-overlap time is determined by the level of the CF signal. If this signal exceeds a level of 1.25 V, the non-overlap will end, resulting in a maximum non-overlap time of 7.5 µs at a bridge frequency of 40 kHz. UBA2014_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 16 October 2008 13 of 19 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx NXP Semiconductors UBA2014_4 Product data sheet 12. Application information F1 1A D1 BYD77D 9 FVDD C5 100 nF 10 GH BOOTSTRAP HIGH SIDE DRIVER VDD 7 TR1 IRF820 R10 1 MΩ R1 1 MΩ L1 11 SH 1.9 mH C6 1.2 nF TR2 IRF820 6 GL LOW SIDE DRIVER C10 5.6 nF Rev. 04 — 16 October 2008 ADAPTIVE NON-OVERLAP TIMING AND CAPACITIVE MODE DETECTOR UBA2014 + VDC 400 V Z1 12 V 12 ACM R16 1.5 Ω CT 1 PREHEAT TIMER C7 330 nF DIVIDER 8 PCS LAMP VOLTAGE SENSOR 13 LVS AVERAGE CURRENT SENSOR 5 3 2 14 IREF GND CF CSW VREF R12 33 kΩ C14 100 pF C13 220 nF + C8 330 pF 47 Ω R20 220 kΩ 16 CS N R8 15 CS P 8.2 kΩ C19 56 nF R5 10 kΩ D4 C17 6.8 nF C22 8.2 nF BYD77D C2 12 nF R14 1Ω R3 220 kΩ C3 1 nF R2 8.2 kΩ R18 180 kΩ Test and application circuit C20 68 nF UBA2014 14 of 19 © NXP B.V. 2008. All rights reserved. mgw586 Fig 8. TLD36W C23 100 nF 4 R4 1 MΩ C15 330 nF R13 150 Ω − C24 100 nF R9 600 V driver IV for HF fluorescent lamps VOLTAGE CONTROLLED OSCILLATOR REFERENCE CURRENT PREHEAT CURRENT SENSOR Lamp DRIVER CONTROL SUPPLY UBA2014 NXP Semiconductors 600 V driver IV for HF fluorescent lamps 13. Package outline SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1 D E A X c y HE v M A Z 16 9 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 8 e 0 detail X w M bp 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 10.0 9.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0100 0.39 0.014 0.0075 0.38 0.039 0.016 0.028 0.020 inches 0.010 0.057 0.069 0.004 0.049 0.16 0.15 0.05 0.244 0.041 0.228 0.01 0.01 0.028 0.004 0.012 θ o 8 o 0 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. Fig 9. REFERENCES OUTLINE VERSION IEC JEDEC SOT109-1 076E07 MS-012 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-19 Package outline SOT109-1 (SO16) UBA2014_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 16 October 2008 15 of 19 UBA2014 NXP Semiconductors 600 V driver IV for HF fluorescent lamps DIP16: plastic dual in-line package; 16 leads (300 mil); long body SOT38-1 ME seating plane D A2 A A1 L c e Z b1 w M (e 1) b MH 9 16 pin 1 index E 1 8 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 c D (1) E (1) e e1 L ME MH w Z (1) max. mm 4.7 0.51 3.7 1.40 1.14 0.53 0.38 0.32 0.23 21.8 21.4 6.48 6.20 2.54 7.62 3.9 3.4 8.25 7.80 9.5 8.3 0.254 2.2 inches 0.19 0.02 0.15 0.055 0.045 0.021 0.015 0.013 0.009 0.86 0.84 0.26 0.24 0.1 0.3 0.15 0.13 0.32 0.31 0.37 0.33 0.01 0.087 Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT38-1 050G09 MO-001 SC-503-16 EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-13 Fig 10. Package outline SOT38-1 (DIP16) UBA2014_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 16 October 2008 16 of 19 UBA2014 NXP Semiconductors 600 V driver IV for HF fluorescent lamps 14. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes UBA2014_4 20081016 Product data sheet - UBA2014_3 Modifications: • • Max value for VHS in Table 1 updated. Max value for VHS in Table 4 updated. UBA2014_3 20080815 Product data sheet - UBA2014_2 UBA2014_2 20050912 Product data sheet - UBA2014_1 UBA2014_1 20020516 Product specification - - UBA2014_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 16 October 2008 17 of 19 UBA2014 NXP Semiconductors 600 V driver IV for HF fluorescent lamps 15. Legal information 15.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 15.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 15.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 16. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] UBA2014_4 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 04 — 16 October 2008 18 of 19 UBA2014 NXP Semiconductors 600 V driver IV for HF fluorescent lamps 17. Contents 1 2 3 4 5 6 7 7.1 7.2 8 8.1 8.2 8.3 8.4 8.5 8.6 8.7 8.8 8.8.1 8.8.2 8.9 8.10 8.11 8.12 9 10 11 12 13 14 15 15.1 15.2 15.3 15.4 16 17 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 Functional description . . . . . . . . . . . . . . . . . . . 5 Start-up state . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Oscillation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Adaptive non-overlap . . . . . . . . . . . . . . . . . . . . 5 Timing circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Preheat state . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Ignition state . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Burn state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Lamp failure mode . . . . . . . . . . . . . . . . . . . . . . 6 During ignition state . . . . . . . . . . . . . . . . . . . . . 6 During burn state . . . . . . . . . . . . . . . . . . . . . . . 6 Power-down mode . . . . . . . . . . . . . . . . . . . . . . 7 Capacitive mode protection . . . . . . . . . . . . . . . 7 Charge coupling . . . . . . . . . . . . . . . . . . . . . . . . 7 Design equations . . . . . . . . . . . . . . . . . . . . . . . 7 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal characteristics. . . . . . . . . . . . . . . . . . 10 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 11 Application information. . . . . . . . . . . . . . . . . . 14 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Contact information. . . . . . . . . . . . . . . . . . . . . 18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 16 October 2008 Document identifier: UBA2014_4