VRF2933 VRF2933MP 50V, 300W, 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. FEATURES • Improved Ruggedness V(BR)DSS = 170V • 3:1 Load VSWR Capability at Specified Operating Conditions • 300W with 22dB Typ. Gain @ 30MHz, 50V • Nitride Passivated • Excellent Stability & Low IMD • Refractory Gold Metallization • Common Source Configuration • Improved Replacement for SD2933 • Available in Matched Pairs • Thermally Enhanced Package • RoHS Compliant Maximum Ratings Symbol VDSS ID All Ratings: TC =25°C unless otherwise specified Parameter Drain-Source Voltage VRF2933(MP) Unit 170 V Continuous Drain Current @ TC = 25°C 40 A VGS Gate-Source Voltage ±40 V PD Total Device dissipation @ TC = 25°C 648 W TSTG TJ Storage Temperature Range -65 to 150 Operating Junction Temperature Max °C 200 Static Electrical Characteristics Symbol Parameter Min Typ V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) 170 180 VDS(ON) On State Drain Voltage (ID(ON) = 20A, VGS = 10V) 1.8 Max 2.8 Unit V IDSS Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) 2.0 mA IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) 2.0 μA gfs Forward Transconductance (VDS = 10V, ID = 20A) 8 VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V Min Typ Max Unit 0.27 °C/W mhos Symbol RθJC Characteristic Junction to Case Thermal Resistance CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-4941 Rev G 9 -2010 Thermal Characteristics Dynamic Characteristics Symbol VRF2933(MP) Parameter Test Conditions Min Typ CISS Input Capacitance VGS = 0V 740 Coss Output Capacitance VDS = 50V 400 Crss Reverse Transfer Capacitance f = 1MHz 32 Max Unit pF Functional Characteristics Symbol Parameter GPS f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W ηD f1 = 175MHz, VDD = 50V, IDQ = 250mA, Pout = 300W ψ f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W Min Typ 20 25 Max dB 50 % No Degradation in Output Power 3:1 VSWR - All Phase Angles 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 30 55 50 45 25 6.5V ID, DRAIN CURRENT (A) 6V 35 30 5.5V 25 20 5V 15 4.5V 10 4V 3.5V 5 0 0 V 5 10 15 15 10 5 TJ= 125°C 0 , DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) FIGURE 1, Output Characteristics 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics 100 ID, DRAIN CURRENT (V) Ciss 1.0E−9 C, CAPACITANCE (F) TJ= 25°C 20 0 20 1.0E−8 Coss 1.0E−10 Crss 1.0E−11 TJ= -55°C 0 10 20 30 40 50 60 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage BVdss Line ID, DRAIN CURRENT (A) 40 050-4941 Rev G 9 -2010 250μs PULSE TEST<0.5 % DUTY CYCLE 7.5V IDMax 10 Rds(on) PD Max 1 TJ = 125°C TC = 75°C 1 Unit 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 4, Forward Safe Operating Area VRF2933(MP) D = 0.9 0.25 0.20 0.7 0.15 0.5 Note: 0.10 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.30 0.3 t1 t2 0.05 t1 = Pulse Duration 0.1 t 0.05 0 10 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10 -5 10-3 -4 10 -1 10-2 1.0 RECTANGULAR PULSE DURATION (seconds) Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration TJ (°C) TC (°C) .076 .115 ZEXT .079 Dissipated Power (Watts) .009 .080 .224 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 5b, TRANSIENT THERMAL IMPEDANCE MODEL 500 Freq=30MHz 450 400 40V 350 300 250 200 150 400 350 250 200 150 100 50 50 0 0.5 1 1.5 2 2.5 Pout, INPUT POWER (WATTS PEP) Figure 6. POUT versus PIN 0 3 40V 300 100 0 50V 450 0 2 4 6 8 10 Pout, INPUT POWER (WATTS PEP) Figure 7. POUT versus PIN 12 Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) Zin Zout 2 23.6 - j 5.5 4.0 - j 0.1 13.5 7.6 - j 10.1 3.9 - j 0.6 27.1 3.5 - j 6.0 3.7 - j 1.1 40.7 2.5 - j 4.0 3.3 - j 1.5 65 1.95 - j 2.07 2.6 - j 1.9 100 1.8 - j 0.66 1.76 - j 0.2 150 1.78 + j 0.5 1.03 + j 1.7 ZIN - Gate shunted with 25Ω Idq = 250mA ZOL - Conjugate of optimum load for 300 Watts output at Vdd=150V 050-4941 Rev G 9-2010 OUTPUT POWER (WPEP) Freq=65MHz 50V OUTPUT POWER (WPEP) 500 VRF2933(MP) 30 MHz Test Circuit 50V R1 Vbias C3 C4 C2 C5 C10 L2 + C11 Output C8 C1 C1 1800pF ATC100B ceramic C2, C3, C5, C9, C10, C12 0.1uF 100V C6 680 pF metal clad 500V mica C7 ARCO 467 mica trimmer C8 100 pF ATC 100E ceramic C4, C11 10uF 100V Electrolytic FB small ferrite bead ui =125 L1 20 nH 2t #18 0.188"d .2"l L2 38 nH - 2.5t #14 enam. .25" dia. C12 T2 VRF2933 C6 050-4941 Rev G 9-2010 L3 C9 FB R3 L1 T1 RF Input R4 + R2 C7 L3 2t #16 on 2x 267300081 .5" bead R1-R2 1k Ohm 1/4W R3 100 Ohm 1W R4 470 Ohm "low inductance" 3W T1 16:1 transforner 4t #20 teflon on RF Parts Co. T1/2 transformer core T2 9:1 transformer 3t #16 teflon on RF Parts Co. T1 transformer core VRF2933(MP) Adding MP at the end of P/N specifies a matched pair where VGS(TH) is matched between the two parts. VTH values are marked on the devices per the following table. Code Vth Range Code 2 Vth Range A 2.900 - 2.975 M 3.650 - 3.725 B 2.975 - 3.050 N 3.725 - 3.800 C 3.050 - 3.125 P 3.800 - 3.875 D 3.125 - 3.200 R 3.875 - 3.950 E 3.200 - 3.275 S 3.950 - 4.025 F 3.275 - 3.350 T 4.025 - 4.100 G 3.350 - 3.425 W 4.100 - 4.175 H 3.425 - 3.500 X 4.175 - 4.250 J 3.500 - 3.575 Y 4.250 - 4.325 K 3.575 - 3.650 Z 4.325 - 4.400 VTH values are based on Microsemi measurements at datasheet conditions with an accuracy of 1.0%. M177 (0.63 dia. SOE) Mechanical Data All dimensions are ±.005 A .125d nom J 4 1 B 5 2 PIN 1 - DRAIN PIN 2 - GATE PIN 3 - SOURCE PIN 4 - SOURCE PIN 5 - SOURCE F 050-4941 Rev G 9-2010 .135 r OK 3 DIM MIN TYP MAX A 0.225 0.230 0.235 B 0.265 0.270 0.275 C 0.860 0.865 0.870 D 1.130 1.135 1.140 E 0.545 0.550 0.555 F 0.003 0.005 0.007 G 0.098 0.103 0.108 C H 0.150 0.160 0.170 D I J 1.080 1.100 1.120 K 0.625 0.630 0.635 E H G 0.280 I Seating Plane Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.