PMT200EN 100 V N-channel Trench MOSFET 25 October 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology 1.3 Applications • Relay driver • LED backlight driver • Low-side loadswitch • Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 100 V VGS gate-source voltage -20 - 20 V ID drain current - - 3.3 A - 190 235 mΩ VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 10 V; ID = 1.5 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product PMT200EN NXP Semiconductors 100 V N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source 4 D drain Simplified outline Graphic symbol D 4 G 1 2 3 S SC-73 (SOT223) 017aaa253 3. Ordering information Table 3. Ordering information Type number Package PMT200EN Name Description Version SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 4. Marking Table 4. Marking codes Type number Marking code PMT200EN T200EN 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 100 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s [1] - 3.3 A VGS = 10 V; Tamb = 25 °C [1] - 1.8 A VGS = 10 V; Tamb = 100 °C [1] - 1.1 A - 13 A [2] - 800 mW [1] - 1700 mW - 8300 mW -55 150 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Tj junction temperature PMT200EN Product data sheet All information provided in this document is subject to legal disclaimers. 25 October 2012 © NXP B.V. 2012. All rights reserved 2 / 13 PMT200EN NXP Semiconductors 100 V N-channel Trench MOSFET Symbol Parameter Tamb Tstg Conditions Min Max Unit ambient temperature -55 150 °C storage temperature -65 150 °C - 1.6 A Source-drain diode IS source current Tamb = 25 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. 017aaa124 120 - 25 25 75 125 Tj (°C) 0 - 75 175 Normalized total power dissipation as a function of junction temperature Fig. 2. - 25 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature aaa-005458 10 Limit RDSon = VDS/ID ID (A) tp = 10 µs 1 tp = 100 µs tp = 1 ms DC; Tsp = 25 °C 10-1 10-2 10-1 tp = 10 ms tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 1 10 102 VDS (V) 103 IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMT200EN Product data sheet All information provided in this document is subject to legal disclaimers. 25 October 2012 © NXP B.V. 2012. All rights reserved 3 / 13 PMT200EN NXP Semiconductors 100 V N-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) in free air; t ≤ 5 s thermal resistance from junction to solder point [1] [2] Min Typ Max Unit [1] - 135 155 K/W [2] - 60 70 K/W [2] - 31 36 K/W - 12 15 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . aaa-005459 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.33 0.2 0.5 0.25 0.1 10 0.05 0.01 1 10-3 0.02 0 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMT200EN Product data sheet All information provided in this document is subject to legal disclaimers. 25 October 2012 © NXP B.V. 2012. All rights reserved 4 / 13 PMT200EN NXP Semiconductors 100 V N-channel Trench MOSFET aaa-005460 102 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.5 0.33 0.25 10 0.2 0.1 0.05 0.02 0.01 0 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 102 10 103 tp (s) 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1.3 1.7 2.5 V IDSS drain leakage current VDS = 100 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 10 V; ID = 1.5 A; Tj = 25 °C - 190 235 mΩ VGS = 10 V; ID = 1.5 A; Tj = 150 °C - 420 520 mΩ VGS = 4.5 V; ID = 1 A; Tj = 25 °C - 200 270 mΩ VDS = 10 V; ID = 1.5 A; Tj = 25 °C - 5 - S total gate charge VDS = 80 V; ID = 1.5 A; VGS = 10 V; - 7.4 10 nC QGS gate-source charge Tj = 25 °C - 0.7 - nC QGD gate-drain charge - 1.9 - nC Ciss input capacitance VDS = 80 V; f = 1 MHz; VGS = 0 V; - 315 475 pF Coss output capacitance Tj = 25 °C - 35 - pF RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) PMT200EN Product data sheet All information provided in this document is subject to legal disclaimers. 25 October 2012 © NXP B.V. 2012. All rights reserved 5 / 13 PMT200EN NXP Semiconductors 100 V N-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit Crss reverse transfer capacitance - 25 - pF td(on) turn-on delay time VDS = 50 V; ID = 1.5 A; VGS = 10 V; - 4 - ns RG(ext) = 6 Ω; Tj = 25 °C tr rise time - 5 - ns td(off) turn-off delay time - 11 - ns tf fall time - 3 - ns - 0.8 1.2 V Source-drain diode VSD source-drain voltage ID (A) IS = 1.6 A; VGS = 0 V; Tj = 25 °C aaa-005461 7 10 V 4.5 V 6 aaa-005462 10-3 ID (A) 3.3 V 5 10-4 4 min 3V typ max 3 10-5 2 2.7 V 1 0 Fig. 6. VGS = 2.4 V 0 1 2 3 VDS (V) 10-6 4 0 1 2 VGS (V) 3 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Subthreshold drain current as a function of gate-source voltage aaa-005463 800 2.6 V RDSon (mΩ) 2.8 V 3V aaa-005464 1000 RDSon (mΩ) 3.2 V 800 600 600 400 Tj = 150 °C 400 200 0 0 1 2 3 4 5 6 ID (A) 0 7 Tj = 25 °C Fig. 8. Product data sheet 0 2 4 6 8 10 VGS (V) ID = 1.5 A Drain-source on-state resistance as a function of drain current; typical values PMT200EN Tj = 25 °C 200 3.5 V 4.5 V VGS = 10 V Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 25 October 2012 © NXP B.V. 2012. All rights reserved 6 / 13 PMT200EN NXP Semiconductors 100 V N-channel Trench MOSFET ID (A) aaa-005465 7 aaa-005466 2.5 a 6 2.0 5 1.5 4 3 1.0 2 Tj = 150 °C Tj = 25 °C 0.5 1 0 0 1 2 3 VGS (V) 0.0 -60 4 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-005467 3 VGS(th) (V) 0 60 120 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-005468 103 max Tj (°C) Ciss C (pF) 2 typ Coss 102 1 0 -60 Crss min 0 60 120 Tj (°C) 10 10-1 180 ID = 0.25 mA; VDS = VGS Product data sheet 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature PMT200EN 1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 25 October 2012 © NXP B.V. 2012. All rights reserved 7 / 13 PMT200EN NXP Semiconductors 100 V N-channel Trench MOSFET aaa-005469 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0 2 4 6 QG (nC) Fig. 15. Gate charge waveform definitions 8 ID = 1.5 A; VDS = 80 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-005470 3.5 IS (A) 3.0 2.5 2.0 Tj = 150 °C Tj = 25 °C 1.5 1.0 0.5 0 0.0 0.4 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition PMT200EN Product data sheet All information provided in this document is subject to legal disclaimers. 25 October 2012 © NXP B.V. 2012. All rights reserved 8 / 13 PMT200EN NXP Semiconductors 100 V N-channel Trench MOSFET 9. Package outline 6.7 6.3 3.1 2.9 1.8 1.5 4 1.1 0.7 7.3 6.7 3.7 3.3 1 2 2.3 3 0.8 0.6 4.6 0.32 0.22 Dimensions in mm 04-11-10 Fig. 18. Package outline SC-73 (SOT223) 10. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig. 19. Reflow soldering footprint for SC-73 (SOT223) PMT200EN Product data sheet All information provided in this document is subject to legal disclaimers. 25 October 2012 © NXP B.V. 2012. All rights reserved 9 / 13 PMT200EN NXP Semiconductors 100 V N-channel Trench MOSFET 8.9 6.7 1.9 solder lands 4 solder resist 6.2 1 2 8.7 Dimensions in mm 3 preferred transport direction during soldering 1.9 (3×) 2.7 occupied area 2.7 1.1 1.9 (2×) sot223_fw Fig. 20. Wave soldering footprint for SC-73 (SOT223) 11. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMT200EN v.1 20121025 Product data sheet - - PMT200EN Product data sheet All information provided in this document is subject to legal disclaimers. 25 October 2012 © NXP B.V. 2012. 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Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ............................................... 2 3 Ordering information ............................................. 2 4 Marking ................................................................... 2 5 Limiting values .......................................................2 6 Thermal characteristics .........................................4 7 Characteristics ....................................................... 5 8 Test information ..................................................... 8 9 Package outline ..................................................... 9 10 Soldering ................................................................ 9 11 Revision history ................................................... 10 12 12.1 12.2 12.3 12.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP B.V. 2012. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 25 October 2012 PMT200EN Product data sheet All information provided in this document is subject to legal disclaimers. 25 October 2012 © NXP B.V. 2012. All rights reserved 13 / 13