SO T4 57 PMN35EN 30 V, 5.1 A N-channel Trench MOSFET Rev. 1 — 20 July 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching 1.3 Applications Relay driver Low-side load switch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V - - 5.1 A - 25 31 mΩ drain current ID [1] VGS = 10 V; Tamb = 25 °C Static characteristics drain-source on-state resistance RDSon [1] VGS = 10 V; ID = 5.1 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain Simplified outline Graphic symbol 6 5 4 1 2 3 D G SOT457 (TSOP6) mbb076 S PMN35EN NXP Semiconductors 30 V, 5.1 A N-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package PMN35EN Name Description Version TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PMN35EN SH 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage drain current ID peak drain current IDM total power dissipation Ptot -20 20 V VGS = 10 V; Tamb = 25 °C [1] - 5.1 A VGS = 10 V; Tamb = 100 °C [1] - 3.2 A - 24 A [2] - 500 mW [1] - 1250 mW Tamb = 25 °C; single pulse; tp ≤ 10 µs Tamb = 25 °C - 4170 mW Tj junction temperature Tsp = 25 °C -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 1.3 A Source-drain diode source current IS Tamb = 25 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMN35EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 July 2011 © NXP B.V. 2011. All rights reserved. 2 of 15 PMN35EN NXP Semiconductors 30 V, 5.1 A N-channel Trench MOSFET 017aaa123 120 017aaa124 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 1. −25 25 75 125 0 −75 175 Tj (°C) Normalized total power dissipation as a function of junction temperature Fig 2. −25 25 75 125 175 Tj (°C) Normalized continuous drain current as a function of junction temperature 017aaa280 102 ID (A) Limit RDSon = VDS/ID 10 (1) (2) 1 (3) (4) (5) 10–1 (6) 10–2 10–1 1 10 VDS (V) 102 IDM = single pulse (1) tp = 100 µs (2) tp = 1 ms (3) tp = 10 ms (4) tp = 100 ms (5) DC; Tsp = 25 °C (6) DC; Tamb = 25 °C; drain mounting pad 6 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage PMN35EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 July 2011 © NXP B.V. 2011. All rights reserved. 3 of 15 PMN35EN NXP Semiconductors 30 V, 5.1 A N-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter thermal resistance from junction to ambient Rth(j-a) Conditions in free air Min Typ Max Unit [1] - 215 250 K/W [2] - 85 100 K/W - 20 30 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. 017aaa281 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.2 0.25 0.1 0.05 10 0.01 0.02 0 1 10–3 10–2 10–1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa282 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.25 0.1 10 0.05 0 1 10–3 0.02 0.01 10–2 10–1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for drain 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMN35EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 July 2011 © NXP B.V. 2011. All rights reserved. 4 of 15 PMN35EN NXP Semiconductors 30 V, 5.1 A N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1 1.5 2.5 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 10 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 10 V; ID = 5.1 A; Tj = 25 °C - 25 31 mΩ RDSon gfs drain-source on-state resistance forward transconductance VGS = 10 V; ID = 5.1 A; Tj = 150 °C - 39 48 mΩ VGS = 4.5 V; ID = 4.3 A; Tj = 25 °C - 32 43 mΩ VDS = 10 V; ID = 5.1 A; Tj = 25 °C - 14 - S VDS = 15 V; ID = 5.1 A; VGS = 10 V; Tj = 25 °C - 6.2 9.3 nC - 0.9 - nC - 1 - nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 15 V; VGS = 10 V; RG(ext) = 6 Ω; Tj = 25 °C; ID = 5.1 A - 334 - pF - 81 - pF - 40 - pF - 4 - ns - 15 - ns turn-off delay time - 53 - ns fall time - 24 - ns - 0.75 1.2 V Source-drain diode VSD source-drain voltage PMN35EN Product data sheet IS = 1.3 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 July 2011 © NXP B.V. 2011. All rights reserved. 5 of 15 PMN35EN NXP Semiconductors 30 V, 5.1 A N-channel Trench MOSFET 017aaa283 24 10 V 6V 4.5 V ID (A) 017aaa218 10–3 ID (A) VGS = 3.5 V 10–4 16 3.1 V (1) 2.9 V 8 (2) (3) 10–5 2.7 V 2.5 V 0 0 1 2 3 VDS (V) 10–6 4 Tj = 25 °C 0 1 2 VGS (V) 3 Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 017aaa284 100 RDSon (mΩ) (1) (2) Sub-threshold drain current as a function of gate-source voltage 017aaa285 160 (4) (3) Fig 7. RDSon (mΩ) 80 120 60 80 (5) 40 (1) (6) 40 (7) 20 (2) 0 2 10 18 ID (A) 0 26 0 2 Tj = 25 °C ID = 3 A (1) VGS = 2.7 V (1) Tj = 150 °C (2) VGS = 2.9 V (2) Tj = 25 °C 4 6 8 10 VGS (V) (3) VGS = 3.1 V (4) VGS = 3.8 V (5) VGS = 4.5 V (6) VGS = 6.0 V (7) VGS = 10 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values PMN35EN Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 July 2011 © NXP B.V. 2011. All rights reserved. 6 of 15 PMN35EN NXP Semiconductors 30 V, 5.1 A N-channel Trench MOSFET 017aaa286 24 ID (A) 017aaa222 1.8 a (1) (2) 16 1.4 8 1.0 (1) 0 0 1 (2) 2 3 4 VGS (V) 0.6 –60 5 0 60 120 Tj (°C) 180 VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa223 3 VGS(th) (V) Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 017aaa287 103 (1) (1) C (pF) 2 (2) 102 (2) 1 (3) (3) 0 –60 0 60 120 Tj (°C) 180 10 10–1 1 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of junction temperature PMN35EN Product data sheet 10 VDS (V) 102 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 July 2011 © NXP B.V. 2011. All rights reserved. 7 of 15 PMN35EN NXP Semiconductors 30 V, 5.1 A N-channel Trench MOSFET 017aaa288 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0 2 4 6 QG (nC) 8 ID = 5.1 A; VDS = 15 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa289 6 IS (A) 4 (1) (2) 2 0 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V) VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values PMN35EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 July 2011 © NXP B.V. 2011. All rights reserved. 8 of 15 PMN35EN NXP Semiconductors 30 V, 5.1 A N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition PMN35EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 July 2011 © NXP B.V. 2011. All rights reserved. 9 of 15 PMN35EN NXP Semiconductors 30 V, 5.1 A N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package (TSOP6); 6 leads D SOT457 E B y A HE 6 5 X v M A 4 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT457 JEITA SC-74 EUROPEAN PROJECTION ISSUE DATE 05-11-07 06-03-16 Fig 18. Package outline SOT457 (TSOP6) PMN35EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 July 2011 © NXP B.V. 2011. All rights reserved. 10 of 15 PMN35EN NXP Semiconductors 30 V, 5.1 A N-channel Trench MOSFET 10. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 sot457_fr Fig 19. Reflow soldering footprint for SOT457 (TSOP6) 5.3 1.5 (4×) solder lands 1.475 0.45 (2×) 5.05 solder resist occupied area 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig 20. Wave soldering footprint for SOT457 (TSOP6) PMN35EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 July 2011 © NXP B.V. 2011. All rights reserved. 11 of 15 PMN35EN NXP Semiconductors 30 V, 5.1 A N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMN35EN v.1 20110720 Product data sheet - - PMN35EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 July 2011 © NXP B.V. 2011. All rights reserved. 12 of 15 PMN35EN NXP Semiconductors 30 V, 5.1 A N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". 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NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 July 2011 © NXP B.V. 2011. All rights reserved. 13 of 15 PMN35EN NXP Semiconductors 30 V, 5.1 A N-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMN35EN Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 July 2011 © NXP B.V. 2011. All rights reserved. 14 of 15 PMN35EN NXP Semiconductors 30 V, 5.1 A N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .1 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . .9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 July 2011 Document identifier: PMN35EN