PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 — 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology 1.3 Applications High-side loadswitch Relay driver High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current - - -3.5 A - 48 55 mΩ VGS = -4.5 V; Tamb = 25 °C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = -4.5 V; ID = -2.4 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 SOT23 (TO-236AB) S 017aaa094 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV48XP TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PMV48XP KN% [1] % = placeholder for manufacturing site code PMV48XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 21 December 2010 © NXP B.V. 2010. All rights reserved. 2 of 15 PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tamb = 25 °C - -20 V VGS gate-source voltage ID drain current total power dissipation Ptot 12 V [1] - -3.5 A VGS = -4.5 V; Tamb = 100 °C [1] - -2.2 A Tamb = 25 °C; single pulse; tp ≤ 10 µs peak drain current IDM -12 VGS = -4.5 V; Tamb = 25 °C Tamb = 25 °C - -14 A [2] - 510 mW [1] - 930 mW - 4150 mW - 150 °C Tsp = 25 °C Tj junction temperature Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - -1 A Source-drain diode source current IS [1] Tamb = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 1. 017aaa124 120 −25 25 75 125 Normalized total power dissipation as a function of junction temperature PMV48XP Product data sheet 0 −75 175 Tj (°C) Fig 2. −25 25 75 125 175 Tj (°C) Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 21 December 2010 © NXP B.V. 2010. All rights reserved. 3 of 15 PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 017aaa125 −102 ID (A) Limit RDSon = VDS/ID −10 (1) (2) −1 (3) (4) (5) −10−1 (6) −10−2 −10−1 −1 −10 −102 VDS (V) IDM = single pulse (1) tp = 100 µs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 6 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) Min Typ Max Unit [1] - 213 245 K/W [2] - 117 135 K/W - 25 30 K/W thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMV48XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 21 December 2010 © NXP B.V. 2010. All rights reserved. 4 of 15 PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 017aaa126 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 10 0.02 0 0.01 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa127 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.25 0.1 10 0 1 10−3 0.33 0.2 0.05 0.02 0.01 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV48XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 21 December 2010 © NXP B.V. 2010. All rights reserved. 5 of 15 PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.75 -1 -1.25 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tamb = 25 °C - - -1 µA IGSS gate leakage current VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nA RDSon drain-source on-state resistance VGS = -4.5 V; ID = -2.4 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C - 48 55 mΩ VGS = -4.5 V; ID = -2.4 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 150 °C - 70 80 mΩ VGS = -2.5 V; ID = -2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C - 71 81 mΩ VDS = -12 V; ID = -2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C - 12 - S ID = -1 A; VDS = -10 V; VGS = -4.5 V; Tj = 25 °C - 8.5 11 nC - 1.8 - nC - 1.8 - nC - 1000 - pF - 130 - pF - 90 - pF - 11 - ns - 13 - ns gfs forward transconductance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 61 - ns tf fall time - 23 - ns - -0.82 -1.2 V VGS = 0 V; VDS = -10 V; f = 1 MHz; Tj = 25 °C VDS = -10 V; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C; ID = -1 A Source-drain diode VSD source-drain voltage PMV48XP Product data sheet IS = -2.4 A; VGS = 0 V; Tj = 25 °C; tp ≤ 300 µs; δ ≤ 0.01 All information provided in this document is subject to legal disclaimers. Rev. 1 — 21 December 2010 © NXP B.V. 2010. All rights reserved. 6 of 15 PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 017aaa128 −14 ID (A) −12 VGS = −4.5 V −3 V −2.25 V −10 017aaa129 −10−3 ID (A) −10−4 −8 (1) (2) (3) −6 −2 V −10−5 −4 −1.8 V −2 0 −1 0 −2 −3 −4 −5 VDS (V) −10−6 0.0 Tj = 25 °C −0.5 −1.0 VGS (V) − 1.5 Tj = 25 °C; VDS = -3 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 017aaa130 0.20 RDSon (Ω) (1) Fig 7. Sub-threshold drain current as a function of gate-source voltage RDSon (Ω) (2) 0.16 0.20 0.12 0.15 (3) 0.08 017aaa131 0.25 0.10 (4) (1) (5) 0.04 0.05 (2) 0.00 0.0 −4.0 −8.0 ID (A) −12.0 0.00 0 −1 Tj = 25 °C ID = -2.4 A (1) VGS = -1.8 V (1) Tj = 125 °C (2) VGS = -2.0 V (2) Tj = 25 °C −2 −3 −4 −5 VGS (V) (3) VGS = -2.25 V (4) VGS = -3.0 V (5) VGS = -4.5 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values PMV48XP Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 21 December 2010 © NXP B.V. 2010. All rights reserved. 7 of 15 PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 017aaa132 −14 ID (A) −12 017aaa133 2.0 a (1) (2) 1.5 −10 −8 1.0 −6 −4 (2) 0.5 (1) −2 0 0.0 −1.0 −2.0 VGS (V) −3.0 0.0 −60 0 60 120 180 Tj (°C) VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa134 −1.6 VGS(th) (V) Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 017aaa135 104 C (pF) (1) −1.2 (1) 103 (2) −0.8 (2) (3) 102 (3) −0.4 0.0 −60 0 60 120 180 Tj (°C) 10 −10−1 −1 ID = -0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of junction temperature PMV48XP Product data sheet 102 10 VDS (V) Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 21 December 2010 © NXP B.V. 2010. All rights reserved. 8 of 15 PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 017aaa136 −4.5 VDS VGS (V) ID −3.0 VGS(pl) VGS(th) VGS −1.5 QGS1 QGS2 QGS QGD QG(tot) 017aaa137 0.0 0 2 4 6 8 10 QG (nC) ID = -2.4 A; VDS = -10 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa138 −14 IS (A) −12 −10 −8 (1) (2) −6 −4 −2 0 0.0 −0.4 −0.8 VSD (V) −1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values PMV48XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 21 December 2010 © NXP B.V. 2010. All rights reserved. 9 of 15 PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 8. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA TO-236AB EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 17. Package outline SOT23 (TO-236AB) PMV48XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 21 December 2010 © NXP B.V. 2010. All rights reserved. 10 of 15 PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 9. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 18. Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 19. Wave soldering footprint for SOT23 (TO-236AB) PMV48XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 21 December 2010 © NXP B.V. 2010. All rights reserved. 11 of 15 PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 10. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMV48XP v.1 20101221 Product data sheet - - PMV48XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 21 December 2010 © NXP B.V. 2010. All rights reserved. 12 of 15 PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Definition Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMV48XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 21 December 2010 © NXP B.V. 2010. All rights reserved. 14 of 15 PMV48XP NXP Semiconductors 20 V, 3.5 A P-channel Trench MOSFET 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 21 December 2010 Document identifier: PMV48XP