LF PA K BUK9Y6R0-60E N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56 20 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • • • • Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications • • • • 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 60 V ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 1 - - 100 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 195 W VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11 - 4.6 6 mΩ VGS = 5 V; ID = 25 A; VDS = 48 V; - 11.1 - nC [1] Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Fig. 13; Fig. 14 [1] Continuous current is limited by package. Scan or click this QR code to view the latest information for this product BUK9Y6R0-60E NXP Semiconductors N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain Graphic symbol D mb G S mbb076 1 2 3 4 LFPAK; PowerSO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package BUK9Y6R0-60E Name Description Version LFPAK; Power-SO8 plastic single-ended surface-mounted package; 4 leads SOT669 7. Marking Table 4. Marking codes Type number Marking code BUK9Y6R0-60E 96E060 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 60 V VDGR drain-gate voltage RGS = 20 kΩ - 60 V VGS gate-source voltage Tj ≤ 175 °C; DC -10 10 V ID drain current Tj ≤ 175 °C; Pulsed [1][2] -15 15 V Tmb = 25 °C; VGS = 5 V; Fig. 1 [3] - 100 A Tmb = 100 °C; VGS = 5 V; Fig. 1 - 85 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 - 479 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 195 W BUK9Y6R0-60E Product data sheet All information provided in this document is subject to legal disclaimers. 20 February 2013 © NXP B.V. 2013. All rights reserved 2 / 13 BUK9Y6R0-60E NXP Semiconductors N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56 Symbol Parameter Tstg Tj Conditions Min Max Unit storage temperature -55 175 °C junction temperature -55 175 °C - 100 A - 479 A - 127 mJ Source-drain diode IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C [3] Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 100 A; Vsup ≤ 60 V; RGS = 50 Ω; [4][5] VGS = 5 V; Tj(init) = 25 °C; unclamped; Fig. 3 [1] [2] [3] [4] [5] Accumulated pulse duration up to 50 hours delivers zero defect ppm Significantly longer life times are achieved by lowering Tj and or VGS Continuous current is limited by package. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Refer to application note AN10273 for further information. 003aaj185 150 03aa16 120 ID (A) Pder (%) 100 80 (1) 50 0 40 0 50 100 0 150 200 Tmb (°C) (1) Capped at 100A due to package Fig. 1. Continuous drain current as a function of mounting base temperature BUK9Y6R0-60E Product data sheet Fig. 2. 0 100 150 Tmb (°C) 200 Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 20 February 2013 50 © NXP B.V. 2013. All rights reserved 3 / 13 BUK9Y6R0-60E NXP Semiconductors N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56 003aaj186 103 IAL (A) 102 (1) 10 (2) 1 (3) 10-1 10-3 Fig. 3. 10-2 10-1 1 tAL (ms) 10 Avalanche rating; avalanche current as a function of avalanche time 003aaj187 103 ID (A) Limit RDSon = VDS / ID tp =10 µ s 102 100 µ s 10 DC 10 ms 100 ms 1 10-1 10-1 Fig. 4. 1 ms 1 10 102 103 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - - 0.77 K/W BUK9Y6R0-60E Product data sheet All information provided in this document is subject to legal disclaimers. 20 February 2013 © NXP B.V. 2013. All rights reserved 4 / 13 BUK9Y6R0-60E NXP Semiconductors N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56 003aai583 1 Zth(j-mb) (K/W) δ = 0.5 0.2 10-1 0.1 0.05 P 0.02 10-2 tp δ= T single shot tp 10-3 10-6 Fig. 5. 10-5 10-4 10-3 10-2 10-1 t T 1 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 54 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; 1.4 1.7 2.1 V - - 2.45 V 0.5 - - V VDS = 60 V; VGS = 0 V; Tj = 25 °C - 0.07 10 µA VDS = 60 V; VGS = 0 V; Tj = 175 °C - - 500 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11 - 4.6 6 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C; - 4 5.2 mΩ - - 13.6 mΩ Static characteristics V(BR)DSS VGS(th) Fig. 9; Fig. 10 ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 9 ID = 1 mA; VDS = VGS; Tj = 175 °C; Fig. 9 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Fig. 11 VGS = 5 V; ID = 25 A; Tj = 175 °C; Fig. 11; Fig. 12 Dynamic characteristics QG(tot) QGS total gate charge ID = 25 A; VDS = 48 V; VGS = 5 V; - 39.4 - nC gate-source charge Fig. 13; Fig. 14 - 12.3 - nC BUK9Y6R0-60E Product data sheet All information provided in this document is subject to legal disclaimers. 20 February 2013 © NXP B.V. 2013. All rights reserved 5 / 13 BUK9Y6R0-60E NXP Semiconductors N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56 Symbol Parameter Conditions Min Typ Max Unit QGD gate-drain charge - 11.1 - nC Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; - 4739 6319 pF Tj = 25 °C; Fig. 15 Coss output capacitance - 391 469 pF Crss reverse transfer capacitance - 202 277 pF td(on) turn-on delay time VDS = 45 V; RL = 1.8 Ω; VGS = 5 V; - 24 - ns tr rise time RG(ext) = 5 Ω - 44 - ns td(off) turn-off delay time - 60 - ns tf fall time - 37 - ns Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.8 1.2 V trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; - 26 - ns Qr recovered charge VDS = 25 V - 23 - nC 003aaj189 100 ID (A) 10 4.5 003aaj190 20 R DSon (mΩ ) 3 75 15 2.8 50 10 2.6 25 5 2.4 0 VGS (V) = 2.2 0 0.5 1 VDS(V) 0 1.5 Tj = 25 °C; tp = 300 μs Fig. 6. Fig. 7. Output characteristics; drain current as a function of drain-source voltage; typical values BUK9Y6R0-60E Product data sheet 0 5 7.5 VGS (V) 10 Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 20 February 2013 2.5 © NXP B.V. 2013. All rights reserved 6 / 13 BUK9Y6R0-60E NXP Semiconductors N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56 003aaj192 180 003aah025 3 VGS(th) (V) 2.5 ID (A) max 2 120 typ 1.5 Tj = 175 °C 0 Fig. 8. min 1 60 0 1 0.5 Tj = 25 °C 2 3 VGS (V) 0 -60 4 Transfer characteristics; drain current as a function of gate-source voltage; typical values Fig. 9. 003aah026 10-1 0 60 120 003aaj195 RDSon (m Ω ) 10-2 2.8 2.6 15 min 10-3 typ max 10 10 180 Gate-source threshold voltage as a function of junction temperature 20 ID (A) Tj (° C) 3 -4 10-6 4.5 5 10-5 VGS (V) = 10 0 1 2 V GS (V) 0 3 Fig. 10. Sub-threshold drain current as a function of gate-source voltage BUK9Y6R0-60E Product data sheet 0 20 40 60 80 ID (A) 100 Tj = 25 °C; tp = 300 μs Fig. 11. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. 20 February 2013 © NXP B.V. 2013. All rights reserved 7 / 13 BUK9Y6R0-60E NXP Semiconductors N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56 003aaj816 2.4 VDS a ID 1.6 VGS(pl) VGS(th) VGS 0.8 QGS1 QGS2 QGS QGD QG(tot) 003aaa508 0 -60 0 60 120 Tj ( °C) Fig. 13. Gate charge waveform definitions 180 Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003aaj197 10 003aaj198 104 V GS (V) C (pF) 8 Ciss 103 6 VDS = 14V Coss VDS = 48V 4 Crss 102 2 0 0 20 40 60 QG (nC) 10 10-1 80 Fig. 14. Gate-source voltage as a function of gate charge; typical values BUK9Y6R0-60E Product data sheet 1 10 V DS (V) 102 Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 20 February 2013 © NXP B.V. 2013. All rights reserved 8 / 13 BUK9Y6R0-60E NXP Semiconductors N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56 003aaj199 100 IS (A) 80 60 40 20 Tj = 175 ° C 0 0 0.3 Tj = 25 °C 0.6 0.9 V (V) 1.2 SD Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values BUK9Y6R0-60E Product data sheet All information provided in this document is subject to legal disclaimers. 20 February 2013 © NXP B.V. 2013. All rights reserved 9 / 13 BUK9Y6R0-60E NXP Semiconductors N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56 11. Package outline Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w M A b X c 1/2 e A (A 3) A1 C θ L detail X 0 2.5 y C 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 b3 b4 2.2 2.0 0.9 0.7 c D (1) c2 D1(1) E(1) E1(1) max 0.25 0.30 4.10 4.20 0.19 0.24 3.80 5.0 4.8 3.3 3.1 e H L L1 L2 w y θ 1.27 6.2 5.8 0.85 0.40 1.3 0.8 1.3 0.8 0.25 0.1 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 06-03-16 11-03-25 MO-235 Fig. 17. Package outline LFPAK; Power-SO8 (SOT669) BUK9Y6R0-60E Product data sheet All information provided in this document is subject to legal disclaimers. 20 February 2013 © NXP B.V. 2013. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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All rights reserved 11 / 13 BUK9Y6R0-60E NXP Semiconductors N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56 No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 Package outline ................................................... 10 12 12.1 12.2 12.3 12.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP B.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 February 2013 BUK9Y6R0-60E Product data sheet All information provided in this document is subject to legal disclaimers. 20 February 2013 © NXP B.V. 2013. All rights reserved 13 / 13