NX7002AK 60 V, single N-channel Trench MOSFET 10 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Very fast switching • Trench MOSFET technology • ESD protected 1.3 Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current - - 190 mA - 3 4.5 Ω VGS = 10 V; Tamb = 25 °C [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 10 V; ID = 100 mA; Tj = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . Scan or click this QR code to view the latest information for this product NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 1 2 G TO-236AB (SOT23) S 017aaa255 3. Ordering information Table 3. Ordering information Type number Package NX7002AK Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code [1] NX7002AK %CM [1] % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tamb = 25 °C - 60 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - 190 mA VGS = 10 V; Tamb = 100 °C [1] - 120 mA - 760 mA [2] - 265 mW [1] - 325 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C NX7002AK Product data sheet All information provided in this document is subject to legal disclaimers. 10 July 2012 © NXP B.V. 2012. All rights reserved 2 / 15 NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET Symbol Parameter Conditions Min Max Unit Tsp = 25 °C - 1330 mW Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 190 mA Source-drain diode IS source current [1] [2] Tamb = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa123 120 Pder (%) 017aaa124 120 Ider (%) 80 80 40 40 0 - 75 Fig. 1. [1] - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature NX7002AK Product data sheet 0 - 75 175 Fig. 2. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 10 July 2012 25 © NXP B.V. 2012. All rights reserved 3 / 15 NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa466 1 Limit RDSon = VDS/ID ID (A) (1) 10-1 (2) (3) (4) (5) 10-2 (6) 10-3 10-1 1 10 102 VDS (V) IDM = single pulse (1) tp = 100 µs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms 2 (6) DC; Tamb = 25 °C; drain mounting pad 1 cm Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] NX7002AK Product data sheet Min Typ Max Unit [1] - 410 470 K/W [2] - 330 380 K/W - - 95 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . All information provided in this document is subject to legal disclaimers. 10 July 2012 © NXP B.V. 2012. All rights reserved 4 / 15 NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa467 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.33 0.2 0.5 0.25 0.1 0.05 10 0.02 0.01 0 1 10-1 10-5 10-4 10-3 10-2 10-1 1 102 10 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa468 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.5 0.33 0.2 0.25 0.1 0.05 0.02 10 0 0.01 1 10-1 10-5 10-4 10-3 10-2 FR4 PCB, mounting pad for drain 1 cm Fig. 5. 10-1 1 102 10 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1.1 1.6 2.1 V IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 60 V; VGS = 0 V; Tj = 150 °C - - 10 µA NX7002AK Product data sheet All information provided in this document is subject to legal disclaimers. 10 July 2012 © NXP B.V. 2012. All rights reserved 5 / 15 NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 2 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 2 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA VGS = 5 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -5 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 10 V; ID = 100 mA; Tj = 25 °C - 3 4.5 Ω VGS = 10 V; ID = 100 mA; Tj = 150 °C - 6.2 9.2 Ω VGS = 5 V; ID = 100 mA; Tj = 25 °C - 3.7 5.2 Ω VDS = 10 V; ID = 200 mA; Tj = 25 °C - 230 - mS total gate charge VDS = 30 V; ID = 200 mA; VGS = 4.5 V; - 0.33 0.43 nC QGS gate-source charge Tj = 25 °C - 0.12 - nC QGD gate-drain charge - 0.09 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 11 17 pF Coss output capacitance Tj = 25 °C - 3.4 - pF Crss reverse transfer capacitance - 1.4 - pF td(on) turn-on delay time VDS = 40 V; RL = 250 Ω; VGS = 10 V; - 6 12 ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 7 - ns td(off) turn-off delay time - 20 40 ns tf fall time - 14 - ns 0.47 0.7 1.2 V RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics QG(tot) Source-drain diode VSD source-drain voltage NX7002AK Product data sheet IS = 115 mA; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 10 July 2012 © NXP B.V. 2012. All rights reserved 6 / 15 NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa469 0.20 10 V ID (A) VGS = 3 V 3.5 V 017aaa470 10-3 5V ID (A) 0.15 10-4 (1) (2) (3) 0.10 2.5 V 10-5 0.05 2V 0 Fig. 6. 0 1 2 3 VDS (V) 10-6 4 0 1 2 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a function of drain-source voltage; typical values (1) minimum values (2) typical values (3) maximum values Fig. 7. 017aaa471 10 RDSon (Ω) 3 Sub-threshold drain current as a function of gate-source voltage 017aaa472 12 3.0 V 2.5 V VGS (V) RDSon (Ω) 8 8 6 (1) 3.5 V 4 4 4.0 V 5.0 V 10 V 2 0 Fig. 8. 0 0.05 0.10 0.15 ID (A) (2) 0 0.20 0 2 Tj = 25 °C ID = 0.2 A Drain-source on-state resistance as a function of drain current; typical values (1) Tj = 150 °C Product data sheet 6 8 10 VGS (V) (2) Tj = 25 °C Fig. 9. NX7002AK 4 Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 10 July 2012 © NXP B.V. 2012. All rights reserved 7 / 15 NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa473 0.20 (1) ID (A) a 0.15 1.5 0.10 1.0 0.05 0.5 (2) 0 0 1 017aaa474 2.0 (2) (1) 2 3 4 VGS (V) 0 -60 5 VDS > ID × RDSon 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values (1) Tj = 25 °C (2) Tj = 150 °C Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa475 2.5 VGS(th) (V) C (pF) (1) 2.0 017aaa476 102 (1) 10 (2) .1.5 (2) (3) 1.0 (3) 1 0.5 0 -60 0 60 120 Tj (°C) 10-1 10-1 180 1 ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (2) typical values (3) minimum values (1) Ciss Product data sheet VDS (V) 102 (2) Coss (3) Crss Fig. 12. Gate-source threshold voltage as a function of junction temperature NX7002AK 10 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 10 July 2012 © NXP B.V. 2012. All rights reserved 8 / 15 NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa477 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0 0.2 0.4 0.6 QG (nC) Fig. 15. Gate charge waveform definitions 0.8 ID = 0.2 A; VDS = 30 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values 017aaa478 0.20 IS (A) 0.15 (1) 0.10 (2) 0.05 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig. 16. Source current as a function of source-drain voltage; typical values NX7002AK Product data sheet All information provided in this document is subject to legal disclaimers. 10 July 2012 © NXP B.V. 2012. All rights reserved 9 / 15 NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition 9. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig. 18. TO-236AB (SOT23) NX7002AK Product data sheet All information provided in this document is subject to legal disclaimers. 10 July 2012 © NXP B.V. 2012. All rights reserved 10 / 15 NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 10. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 19. Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 20. Wave soldering footprint for SOT23 (TO-236AB) NX7002AK Product data sheet All information provided in this document is subject to legal disclaimers. 10 July 2012 © NXP B.V. 2012. All rights reserved 11 / 15 NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET 11. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes NX7002AK v.3 20120710 Product data sheet - NX7002AK v.2 Modifications: • NX7002AK v.2 20120301 Product data sheet - NX7002AK v.1 NX7002AK v.1 20120212 Product data sheet - - NX7002AK Product data sheet Characteristics: IGSS value corrected All information provided in this document is subject to legal disclaimers. 10 July 2012 © NXP B.V. 2012. All rights reserved 12 / 15 NX7002AK NXP Semiconductors 60 V, single N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 10 July 2012 © NXP B.V. 2012. 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Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ............................................... 2 3 Ordering information ............................................. 2 4 Marking ................................................................... 2 5 Limiting values .......................................................2 6 Thermal characteristics .........................................4 7 Characteristics ....................................................... 5 8 Test information ................................................... 10 9 Package outline ................................................... 10 10 Soldering .............................................................. 11 11 Revision history ................................................... 12 12 12.1 12.2 12.3 12.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP B.V. 2012. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 10 July 2012 NX7002AK Product data sheet All information provided in this document is subject to legal disclaimers. 10 July 2012 © NXP B.V. 2012. All rights reserved 15 / 15