PHILIPS BUK436W

Philips Semiconductors
Product specification
PowerMOS transistor
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
PINNING - SOT429 (TO247)
PIN
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
VDS
ID
Ptot
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
1000
3.1
125
5
V
A
W
Ω
PIN CONFIGURATION
SYMBOL
DESCRIPTION
1
gate
2
drain
3
source
tab
BUK436W-1000B
drain
d
g
1
2
3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
RGS = 20 kΩ
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
MIN.
MAX.
UNIT
-55
-
1000
1000
30
3.1
2.0
12
125
150
150
V
V
V
A
A
A
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
Rth j-a
March 1998
CONDITIONS
1
MIN.
TYP.
MAX.
UNIT
-
-
1.0
K/W
-
45
-
K/W
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK436W-1000B
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
VGS = 0 V; ID = 0.25 mA
1000
-
-
V
2.1
-
3.0
2
0.1
10
4.5
4.0
20
1.0
100
5.0
V
µA
mA
nA
Ω
MIN.
TYP.
MAX.
UNIT
3.0
4.3
-
S
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
VDS = VGS; ID = 1 mA
VDS = 1000 V; VGS = 0 V; Tj = 25 ˚C
VDS = 1000 V; VGS = 0 V; Tj =125 ˚C
VGS = ±30 V; VDS = 0 V
VGS = 10 V; ID = 1.5 A
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
gfs
Forward transconductance
VDS = 25 V; ID = 1.5 A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
1000
80
30
1250
120
50
pF
pF
pF
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 30 V; ID = 2.3 A;
VGS = 10 V; RGS = 50 Ω;
Rgen = 50 Ω
-
10
25
130
40
25
40
150
60
ns
ns
ns
ns
Ld
Internal drain inductance
-
5
-
nH
Ld
Internal drain inductance
-
5
-
nH
Ls
Internal source inductance
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
12.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IDR
-
-
-
3.5
A
IDRM
VSD
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
IF = 3.5 A ; VGS = 0 V
-
1.0
14
1.3
A
V
trr
Qrr
Reverse recovery time
Reverse recovery charge
IF = 3.5 A; -dIF/dt = 100 A/µs;
VGS = 0 V; VR = 100 V
-
1800
12
-
ns
µC
March 1998
2
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
120
BUK436W-1000B
Normalised Power Derating
PD%
Zth j-mb / (K/W)
10
BUKx56-hv
110
100
90
D=
0.5
1
80
70
60
50
0.2
0.1
0.05
0.02
0.1
40
30
0.01
t
T
0
0
20
40
60
80
100
Tmb / C
120
0.001
140
1E-05
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
120
p
D= t
T
tp
PD
0
20
10
1E-01
1E+01
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
Normalised Current Derating
ID%
1E-03
t/s
BUK456-1000A
ID / A
6
110
VGS / V =
100
90
5
80
4
10
6
70
60
50
3
40
2
5
4.8
30
4.6
20
10
1
0
0
4
0
20
40
60
80
Tmb / C
100
120
BUK456-1000B
ID / A
4
8
12
16
VDS / V
15
4.6
)
28
4.8
VGS / V =
ID
S/
ON
24
BUK456-1000A
RDS(ON) / Ohm
4.2 4.4
10
20
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V
100
0
140
4.4
4.2
D
=V
10
S(
tp = 10 us
RD
5
100 us
1
5
1 ms
DC
10
10 ms
100 ms
0
0.1
10
100
0
1000
VDS / V
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
March 1998
1
2
ID / A
3
4
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
3
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
6
BUK436W-1000B
ID / A
VGS(TO) / V
BUK456-1000A
max.
4
5
Tj / C =
25
typ.
3
4
min.
3
2
150
2
1
1
0
0
0
2
4
6
8
-60
10
-40
-20
0
VGS / V
gfs / S
BUK456-1000A
1E-02
3
1E-03
2
1E-04
1
1E-05
2%
100
120
140
typ
98 %
1E-06
0
2
4
6
0
1
2
VGS / V
ID / A
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
80
SUB-THRESHOLD CONDUCTION
ID / A
1E-01
4
0
40
60
Tj / C
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
5
20
4
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Normalised RDS(ON) = f(Tj)
a
3
10000
BUK4y6-800
C / pF
1000
Ciss
100
Coss
Crss
-60 -40 -20
0
20
40 60
Tj / C
80
10
100 120 140
0
40
VDS / V
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 1.5 A; VGS = 10 V
March 1998
20
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
4
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
12
BUK436W-1000B
BUK456-1000
VGS / V
10
BUK456-1000A
IF / A
VDS / V =200
10
8
150 C
25 C
8
800
6
6
4
4
2
2
0
0
0
10
20
QG / nC
30
40
0
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 3.5 A; parameter VDS
March 1998
1
VSDS / V
2
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
5
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK436W-1000B
MECHANICAL DATA
Dimensions in mm
5.3 max
16 max
1.8
Net Mass: 5 g
5.3
o 3.5
max
7.3
3.5
21
max
seating
plane
15.5
max
2.5
15.5
min
4.0
max
1
2
3
0.9 max
2.2 max
1.1
3.2 max
5.45
0.4 M
5.45
Fig.15. SOT429 (TO247); pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT429 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
March 1998
6
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK436W-1000B
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
March 1998
7
Rev 1.000