APTM100A13SG Phase leg Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS Q1 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration G1 OUT S1 Q2 G2 0/VBUS S2 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 65 49 240 ±30 156 1250 24 30 1300 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM100A13SG – Rev 5 October, 2013 Symbol VDSS APTM100A13SG Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS= 1000V Tj = 25°C VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 32.5A VGS = VDS, ID = 6mA VGS = ±30 V, VDS = 0V Typ 130 3 Max 600 2 156 5 ±450 Unit µA mA mΩ V nA Max Unit Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 15.2 2.6 0.42 nF 562 VGS = 10V VBus = 500V ID = 65A 75 nC 363 9 9 50 Inductive switching @ 125°C VGS = 15V VBus = 667V ID = 65A RG = 0.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 65A, RG = 0.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 667V ID = 65A, RG = 0.5Ω ns 24 2.13 mJ 0.46 4.4 mJ 0.57 0.1 °C/W Max Unit V µA A Series diode ratings and characteristics VF Characteristic Test Conditions Maximum Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=1000V DC Forward Current IF = 120A IF = 240A Diode Forward Voltage IF = 120A trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC IF = 120A VR = 667V di/dt = 400A/µs Min 1000 Typ 350 Tc = 100°C Tj = 125°C 120 1.9 2.2 1.7 Tj = 25°C 280 Tj = 125°C 350 Tj = 25°C 1520 Tj = 125°C 7200 Junction to Case Thermal Resistance 2.5 V ns nC 0.46 www.microsemi.com °C/W 2–7 APTM100A13SG – Rev 5 October, 2013 Symbol VRRM IRM IF APTM100A13SG Parallel diode ratings and characteristics Symbol VRRM IRM IF VF Characteristic Test Conditions Maximum Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=1000V DC Forward Current IF = 120A IF = 240A Diode Forward Voltage IF = 120A trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC IF = 120A VR = 667V di/dt = 400A/µs Min 1000 Typ Max 350 Tj = 125°C 120 1.9 2.2 1.7 Tj = 25°C 280 Tj = 125°C Tj = 25°C Tj = 125°C 350 1520 7200 Tc = 100°C Junction to Case Thermal Resistance Unit V µA A 2.5 V ns nC 0.46 °C/W Max Unit V Thermal and package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink Mounting torque For terminals Package Weight M6 M5 Min 4000 -40 -40 -40 3 2 Typ 150 125 100 5 3.5 300 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM100A13SG – Rev 5 October, 2013 SP6 Package outline (dimensions in mm) APTM100A13SG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 360 6.5V 120 6V 90 60 5.5V 30 5V 300 240 180 TJ=125°C 120 60 0 4 8 12 16 20 24 TJ=25°C 0 28 0 VGS=10V 1.2 VGS=20V 1.1 1 0.9 0.8 30 60 4 5 6 7 8 9 10 70 Normalized to VGS=10V @ 32.5A 0 3 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 1.3 2 VGS , Gate to Source Voltage (V) ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 1 90 120 150 180 60 50 40 30 20 10 0 25 ID, Drain Current (A) 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM100A13SG – Rev 5 October, 2013 0 VDS > ID (on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 7V VGS=15&10V 150 ID, Drain Current (A) ID, Drain Current (A) 180 Breakdown Voltage vs Temperature 1.15 1.10 1.05 1.00 25 50 75 100 125 150 RDS (on), Drain to Source ON resistance (Normalized) ON resistance vs Temperature 2.5 VGS=10V I D=32.5A 2.0 1.5 1.0 0.5 25 100 125 150 Maximum Safe Operating Area Threshold Voltage vs Temperature 1000 0.95 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 75 TJ, Junction Temperature (°C) T J, Junction Temperature (°C) 1.00 0.90 0.85 0.80 0.75 0.70 100µs limited by RDSon 100 1ms 10 Single pulse T J =150°C T C=25°C 0.65 0.60 10ms 1 25 50 75 100 125 1 150 Capacitance vs Drain to Source Voltage VGS , Gate to Source Voltage (V) 100000 Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 10 100 1000 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) 50 Gate Charge vs Gate to Source Voltage 14 VDS=200V ID=65A 12 TJ =25°C 10 VDS=500V 8 VDS=800V 6 4 2 0 50 VDS , Drain to Source Voltage (V) 0 120 240 360 480 600 720 840 Gate Charge (nC) www.microsemi.com 5–7 APTM100A13SG – Rev 5 October, 2013 BVDSS , Drain to Source Breakdown Voltage (Normalized) APTM100A13SG APTM100A13SG Delay Times vs Current Rise and Fall times vs Current 50 td(off) 50 40 40 tr and tf (ns) VDS=667V RG=0.5Ω TJ=125°C L=100µH 30 20 td(on) 30 20 10 10 0 30 40 50 60 70 80 90 100 20 30 40 50 60 70 80 ID, Drain Current (A) ID, Drain Current (A) 90 100 Switching Energy vs Gate Resistance Switching Energy vs Current 6 VDS=667V RG=0.5Ω TJ=125°C L=100µH 7 6 5 Switching Energy (mJ) 8 Switching Energy (mJ) tr 0 20 Eon 4 3 2 Eoff 1 0 5 Eon 4 VDS=667V ID=65A TJ=125°C L=100µH 3 2 Eoff 1 0 20 30 40 50 60 70 80 90 100 0 ID, Drain Current (A) 1 2 3 4 5 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 500 VDS=667V D=50% RG=0.5Ω TJ=125°C TC=75°C 400 Frequency (kHz) tf VDS=667V RG=0.5Ω TJ=125°C L=100µH 300 ZCS 200 Hard switching 100 ZVS 0 10 20 30 40 50 ID, Drain Current (A) TJ=150°C 100 TJ=25°C 10 1 60 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTM100A13SG – Rev 5 October, 2013 td(on) and td(off) (ns) 60 APTM100A13SG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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